ES352146A1 - Una disposicion de circuito monolitico de transistores. - Google Patents

Una disposicion de circuito monolitico de transistores.

Info

Publication number
ES352146A1
ES352146A1 ES352146A ES352146A ES352146A1 ES 352146 A1 ES352146 A1 ES 352146A1 ES 352146 A ES352146 A ES 352146A ES 352146 A ES352146 A ES 352146A ES 352146 A1 ES352146 A1 ES 352146A1
Authority
ES
Spain
Prior art keywords
region
base
capacitor
emitter
diffused
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES352146A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of ES352146A1 publication Critical patent/ES352146A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H01L21/8228—Complementary devices, e.g. complementary transistors
    • H01L21/82285—Complementary vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826—Combination of vertical complementary transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/035—Diffusion through a layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
ES352146A 1967-06-30 1968-03-29 Una disposicion de circuito monolitico de transistores. Expired ES352146A1 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US65030367A 1967-06-30 1967-06-30
US65049667A 1967-06-30 1967-06-30

Publications (1)

Publication Number Publication Date
ES352146A1 true ES352146A1 (es) 1969-10-01

Family

ID=27095824

Family Applications (2)

Application Number Title Priority Date Filing Date
ES352146A Expired ES352146A1 (es) 1967-06-30 1968-03-29 Una disposicion de circuito monolitico de transistores.
ES366504A Expired ES366504A1 (es) 1967-06-30 1969-04-26 Un procedimiento para fabricar un circuito monolitico de transistores.

Family Applications After (1)

Application Number Title Priority Date Filing Date
ES366504A Expired ES366504A1 (es) 1967-06-30 1969-04-26 Un procedimiento para fabricar un circuito monolitico de transistores.

Country Status (6)

Country Link
US (2) US3465215A (es)
BE (1) BE712947A (es)
ES (2) ES352146A1 (es)
FR (1) FR1560062A (es)
GB (1) GB1213321A (es)
NL (1) NL6804357A (es)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3576475A (en) * 1968-08-29 1971-04-27 Texas Instruments Inc Field effect transistors for integrated circuits and methods of manufacture
US3734787A (en) * 1970-01-09 1973-05-22 Ibm Fabrication of diffused junction capacitor by simultaneous outdiffusion
US3619735A (en) * 1970-01-26 1971-11-09 Ibm Integrated circuit with buried decoupling capacitor
US3731372A (en) * 1970-04-10 1973-05-08 Itt Method of forming a low-ohmic contact to a semiconductor device
US3770519A (en) * 1970-08-05 1973-11-06 Ibm Isolation diffusion method for making reduced beta transistor or diodes
JPS5122610B1 (es) * 1970-08-12 1976-07-10
US4054899A (en) * 1970-09-03 1977-10-18 Texas Instruments Incorporated Process for fabricating monolithic circuits having matched complementary transistors and product
IT946150B (it) * 1971-12-15 1973-05-21 Ates Componenti Elettron Perfezionamento al processo plana re epistssiale per la produzione di circuiti integrati lineari di potenza
US3969750A (en) * 1974-02-12 1976-07-13 International Business Machines Corporation Diffused junction capacitor and process for producing the same
JPS5753667B2 (es) * 1974-07-04 1982-11-13
JPS5676560A (en) * 1979-11-28 1981-06-24 Hitachi Ltd Semiconductor device
JPS56124257A (en) * 1981-02-23 1981-09-29 Hitachi Ltd Manufacturing of semiconductor integrated circuit device
DE3361832D1 (en) * 1982-04-19 1986-02-27 Matsushita Electric Ind Co Ltd Semiconductor ic and method of making the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3258723A (en) * 1962-01-30 1966-06-28 Osafune ia
US3327182A (en) * 1965-06-14 1967-06-20 Westinghouse Electric Corp Semiconductor integrated circuit structure and method of making the same
US3370995A (en) * 1965-08-02 1968-02-27 Texas Instruments Inc Method for fabricating electrically isolated semiconductor devices in integrated circuits

Also Published As

Publication number Publication date
NL6804357A (es) 1968-12-31
GB1213321A (en) 1970-11-25
FR1560062A (es) 1969-03-14
BE712947A (es) 1968-07-31
US3465215A (en) 1969-09-02
US3474309A (en) 1969-10-21
ES366504A1 (es) 1971-02-16

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