JPS6471178A - Bipolar semiconductor device - Google Patents
Bipolar semiconductor deviceInfo
- Publication number
- JPS6471178A JPS6471178A JP62226517A JP22651787A JPS6471178A JP S6471178 A JPS6471178 A JP S6471178A JP 62226517 A JP62226517 A JP 62226517A JP 22651787 A JP22651787 A JP 22651787A JP S6471178 A JPS6471178 A JP S6471178A
- Authority
- JP
- Japan
- Prior art keywords
- type gaas
- gaas layer
- collector
- emitter
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To improve the emitter injection efficiency of a particulate carrier as well as the dielectric strength of a collector by lowering the carrier concentration of each emitter, base, and collector region in the described order. CONSTITUTION:An n<+> type GaAs layer 2, an n-type Al0.3Ga0.7As layer 3, a p<+> type GaAs layer 4, an n-type GaAs layer 5, a p-type GaAs layer 5 are formed on a semi-insulating GaAs substrate. Then, the collector part 8 of an npn transistor and the base outgoing part 7 of a pnp transistor are formed by the two-stage ion implantation of silicon. And after forming a collector contact part, the high resistance region 10 of transistor element isolation is formed by an H<+> ion implantation. Subsequently, after etching respective layers up to the p<+> type GaAs layer 4 and further, up to the n<+> type GaAs layer 2, base electrodes 14 and 13 as well as emitter electrodes 16, 15, 12, and 11 of npn and pnp transistors are formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62226517A JPS6471178A (en) | 1987-09-11 | 1987-09-11 | Bipolar semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62226517A JPS6471178A (en) | 1987-09-11 | 1987-09-11 | Bipolar semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6471178A true JPS6471178A (en) | 1989-03-16 |
Family
ID=16846369
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62226517A Pending JPS6471178A (en) | 1987-09-11 | 1987-09-11 | Bipolar semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6471178A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01198068A (en) * | 1988-02-03 | 1989-08-09 | Hitachi Ltd | Semiconductor device |
US5784950A (en) * | 1996-03-26 | 1998-07-28 | Kabushiki Kaisha Toyoda Jidoshokki Seisakusho | Single headed swash plate type compressor having a piston with an oil communication hole on a side of the piston remote from the cylinder bore and crank chamber |
US6006652A (en) * | 1998-10-30 | 1999-12-28 | General Motors Corporation | Automotive refrigerant wobble plate type compressor piston with improved ball and socket joint |
-
1987
- 1987-09-11 JP JP62226517A patent/JPS6471178A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01198068A (en) * | 1988-02-03 | 1989-08-09 | Hitachi Ltd | Semiconductor device |
US5784950A (en) * | 1996-03-26 | 1998-07-28 | Kabushiki Kaisha Toyoda Jidoshokki Seisakusho | Single headed swash plate type compressor having a piston with an oil communication hole on a side of the piston remote from the cylinder bore and crank chamber |
US6006652A (en) * | 1998-10-30 | 1999-12-28 | General Motors Corporation | Automotive refrigerant wobble plate type compressor piston with improved ball and socket joint |
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