JPS6471178A - Bipolar semiconductor device - Google Patents

Bipolar semiconductor device

Info

Publication number
JPS6471178A
JPS6471178A JP62226517A JP22651787A JPS6471178A JP S6471178 A JPS6471178 A JP S6471178A JP 62226517 A JP62226517 A JP 62226517A JP 22651787 A JP22651787 A JP 22651787A JP S6471178 A JPS6471178 A JP S6471178A
Authority
JP
Japan
Prior art keywords
type gaas
gaas layer
collector
emitter
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62226517A
Other languages
Japanese (ja)
Inventor
Yasuhiko Kuriyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62226517A priority Critical patent/JPS6471178A/en
Publication of JPS6471178A publication Critical patent/JPS6471178A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To improve the emitter injection efficiency of a particulate carrier as well as the dielectric strength of a collector by lowering the carrier concentration of each emitter, base, and collector region in the described order. CONSTITUTION:An n<+> type GaAs layer 2, an n-type Al0.3Ga0.7As layer 3, a p<+> type GaAs layer 4, an n-type GaAs layer 5, a p-type GaAs layer 5 are formed on a semi-insulating GaAs substrate. Then, the collector part 8 of an npn transistor and the base outgoing part 7 of a pnp transistor are formed by the two-stage ion implantation of silicon. And after forming a collector contact part, the high resistance region 10 of transistor element isolation is formed by an H<+> ion implantation. Subsequently, after etching respective layers up to the p<+> type GaAs layer 4 and further, up to the n<+> type GaAs layer 2, base electrodes 14 and 13 as well as emitter electrodes 16, 15, 12, and 11 of npn and pnp transistors are formed.
JP62226517A 1987-09-11 1987-09-11 Bipolar semiconductor device Pending JPS6471178A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62226517A JPS6471178A (en) 1987-09-11 1987-09-11 Bipolar semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62226517A JPS6471178A (en) 1987-09-11 1987-09-11 Bipolar semiconductor device

Publications (1)

Publication Number Publication Date
JPS6471178A true JPS6471178A (en) 1989-03-16

Family

ID=16846369

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62226517A Pending JPS6471178A (en) 1987-09-11 1987-09-11 Bipolar semiconductor device

Country Status (1)

Country Link
JP (1) JPS6471178A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01198068A (en) * 1988-02-03 1989-08-09 Hitachi Ltd Semiconductor device
US5784950A (en) * 1996-03-26 1998-07-28 Kabushiki Kaisha Toyoda Jidoshokki Seisakusho Single headed swash plate type compressor having a piston with an oil communication hole on a side of the piston remote from the cylinder bore and crank chamber
US6006652A (en) * 1998-10-30 1999-12-28 General Motors Corporation Automotive refrigerant wobble plate type compressor piston with improved ball and socket joint

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01198068A (en) * 1988-02-03 1989-08-09 Hitachi Ltd Semiconductor device
US5784950A (en) * 1996-03-26 1998-07-28 Kabushiki Kaisha Toyoda Jidoshokki Seisakusho Single headed swash plate type compressor having a piston with an oil communication hole on a side of the piston remote from the cylinder bore and crank chamber
US6006652A (en) * 1998-10-30 1999-12-28 General Motors Corporation Automotive refrigerant wobble plate type compressor piston with improved ball and socket joint

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