JPS6425454A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6425454A
JPS6425454A JP62181497A JP18149787A JPS6425454A JP S6425454 A JPS6425454 A JP S6425454A JP 62181497 A JP62181497 A JP 62181497A JP 18149787 A JP18149787 A JP 18149787A JP S6425454 A JPS6425454 A JP S6425454A
Authority
JP
Japan
Prior art keywords
type
layer
collector
transistor
well region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62181497A
Other languages
Japanese (ja)
Other versions
JP2537886B2 (en
Inventor
Masaoki Kajiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62181497A priority Critical patent/JP2537886B2/en
Publication of JPS6425454A publication Critical patent/JPS6425454A/en
Application granted granted Critical
Publication of JP2537886B2 publication Critical patent/JP2537886B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826—Combination of vertical complementary transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To accelerate the operation of a transistor by forming an NPN transistor in such a manner that its shallow N-type well is used as a collector and a PNP transistor on an N<+> type buried layer in such a manner that the P<+> type buried layer is used as a collector. CONSTITUTION:A deep N<+> type buried layer 2 and a shallow N<+> type buried layer 3 are formed on a P<-> type semiconductor substrate 1, P<+> type buried layers 4a, 4b are formed, and N-type well regions 6b, 6c and a P-type well region 7 are formed on the layers 3, 4a, 4b. A P-type active base layer 10, and an N<+> type collector wall layer 9, an N<+> type emitter layer 14 and a P<+> type base layer 13 are formed in a well region 6b to construct an NPN transistor. A P<+> type emitter layer 13, an N<+> type base contact layer 14 and a P<+> type collector contact layer 13 are formed on a well region 6c to construct a PNP transistor. According to this configuration, both the transistors can be reduced at its collector series resistance to be accelerated in its operation.
JP62181497A 1987-07-21 1987-07-21 Semiconductor device Expired - Fee Related JP2537886B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62181497A JP2537886B2 (en) 1987-07-21 1987-07-21 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62181497A JP2537886B2 (en) 1987-07-21 1987-07-21 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS6425454A true JPS6425454A (en) 1989-01-27
JP2537886B2 JP2537886B2 (en) 1996-09-25

Family

ID=16101792

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62181497A Expired - Fee Related JP2537886B2 (en) 1987-07-21 1987-07-21 Semiconductor device

Country Status (1)

Country Link
JP (1) JP2537886B2 (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61236153A (en) * 1985-04-12 1986-10-21 Hitachi Ltd Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61236153A (en) * 1985-04-12 1986-10-21 Hitachi Ltd Semiconductor device

Also Published As

Publication number Publication date
JP2537886B2 (en) 1996-09-25

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees