ES431157A3 - Procedure for depositing a monocrystalline semiconductor film. (Machine-translation by Google Translate, not legally binding) - Google Patents

Abstract

Method for depositing a monocrystalline semiconductor film from a gaseous stream and in doping the film by controlled addition to the gas stream of a compound of impurities that is fully gaseous at normal room temperature, said method including the steps consisting of: passing over a semiconductor crystal element a main stream of carrier gas, injecting into said main gas stream a gaseous compound of said semiconductor material from which the semiconductor material is deposited in said crystal element at a temperature higher than 600º c, extracting a mixture of a diluent gas and a normally gaseous hydride compound from a doping impurity, from a source vessel in which said hydride compound is completely gaseous and is diluted by said diluent gas to a predetermined low concentration, injecting said mixture into a stream of gas diluent par to form a stream of diluted doping gas, to inject the mixed gases from said stream of diluted doping gas into said main gas stream with a regulated flow rate to control the impurity content of the final semiconductor films, and to subject said element of glass at a temperature below the melting point of said semiconductor material but sufficiently greater than 600ºC to produce the simultaneous depositing of the semiconductor material and the impurities material from said main gas stream on said crystal element thus forming a semiconductor film doped in said crystal element, which prolongs the crystalline structure thereof. (Machine-translation by Google Translate, not legally binding)