ES384679A1 - Un metodo de fabricar un circuito integrado monolitico. - Google Patents

Un metodo de fabricar un circuito integrado monolitico.

Info

Publication number
ES384679A1
ES384679A1 ES384679A ES384679A ES384679A1 ES 384679 A1 ES384679 A1 ES 384679A1 ES 384679 A ES384679 A ES 384679A ES 384679 A ES384679 A ES 384679A ES 384679 A1 ES384679 A1 ES 384679A1
Authority
ES
Spain
Prior art keywords
type
collector region
epitaxial layer
conductivity
pedestal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES384679A
Other languages
English (en)
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of ES384679A1 publication Critical patent/ES384679A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Bipolar Transistors (AREA)
ES384679A 1969-11-10 1970-10-19 Un metodo de fabricar un circuito integrado monolitico. Expired ES384679A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US87501369A 1969-11-10 1969-11-10

Publications (1)

Publication Number Publication Date
ES384679A1 true ES384679A1 (es) 1973-03-16

Family

ID=25365050

Family Applications (1)

Application Number Title Priority Date Filing Date
ES384679A Expired ES384679A1 (es) 1969-11-10 1970-10-19 Un metodo de fabricar un circuito integrado monolitico.

Country Status (13)

Country Link
US (1) US3709746A (enExample)
JP (1) JPS4926752B1 (enExample)
AT (1) AT324425B (enExample)
BE (1) BE758682A (enExample)
CA (1) CA924823A (enExample)
CH (1) CH506890A (enExample)
DE (1) DE2047241C3 (enExample)
DK (1) DK140869B (enExample)
ES (1) ES384679A1 (enExample)
FR (1) FR2067056B1 (enExample)
GB (1) GB1304246A (enExample)
NL (1) NL7016393A (enExample)
SE (1) SE352783B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3940783A (en) * 1974-02-11 1976-02-24 Signetics Corporation Majority carriers-variable threshold rectifier and/or voltage reference semiconductor structure
US4193080A (en) * 1975-02-20 1980-03-11 Matsushita Electronics Corporation Non-volatile memory device
US4258379A (en) * 1978-09-25 1981-03-24 Hitachi, Ltd. IIL With in and outdiffused emitter pocket
US4252581A (en) * 1979-10-01 1981-02-24 International Business Machines Corporation Selective epitaxy method for making filamentary pedestal transistor
US4644383A (en) * 1985-04-08 1987-02-17 Harris Corporation Subcollector for oxide and junction isolated IC's
DE3679618D1 (de) * 1985-08-26 1991-07-11 Matsushita Electric Industrial Co Ltd Halbleiterbauelement mit einem abrupten uebergang und verfahren zu seiner herstellung mittels epitaxie.
GB9013926D0 (en) * 1990-06-22 1990-08-15 Gen Electric Co Plc A vertical pnp transistor
JPH05109753A (ja) * 1991-08-16 1993-04-30 Toshiba Corp バイポーラトランジスタ
KR100595899B1 (ko) * 2003-12-31 2006-06-30 동부일렉트로닉스 주식회사 이미지 센서 및 그 제조방법
US20080087978A1 (en) * 2006-10-11 2008-04-17 Coolbaugh Douglas D Semiconductor structure and method of manufacture
JP6487386B2 (ja) 2016-07-22 2019-03-20 ファナック株式会社 時刻精度を維持するためのサーバ、方法、プログラム、記録媒体、及びシステム

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL297821A (enExample) * 1962-10-08
FR1559608A (enExample) * 1967-06-30 1969-03-14

Also Published As

Publication number Publication date
GB1304246A (enExample) 1973-01-24
SE352783B (enExample) 1973-01-08
NL7016393A (enExample) 1971-05-12
FR2067056A1 (enExample) 1971-08-13
FR2067056B1 (enExample) 1974-08-23
DK140869B (da) 1979-11-26
BE758682A (fr) 1971-05-10
CH506890A (de) 1971-04-30
DE2047241A1 (de) 1971-05-19
US3709746A (en) 1973-01-09
JPS4926752B1 (enExample) 1974-07-11
AT324425B (de) 1975-08-25
CA924823A (en) 1973-04-17
DK140869C (enExample) 1980-04-28
DE2047241B2 (de) 1978-06-22
DE2047241C3 (de) 1979-03-08

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