AT324425B - Verfahren zur herstellung eines planartransistors mit vergrabener kollektorschicht - Google Patents

Verfahren zur herstellung eines planartransistors mit vergrabener kollektorschicht

Info

Publication number
AT324425B
AT324425B AT873570A AT873570A AT324425B AT 324425 B AT324425 B AT 324425B AT 873570 A AT873570 A AT 873570A AT 873570 A AT873570 A AT 873570A AT 324425 B AT324425 B AT 324425B
Authority
AT
Austria
Prior art keywords
manufacturing
collector layer
planar transistor
buried collector
buried
Prior art date
Application number
AT873570A
Other languages
English (en)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of AT324425B publication Critical patent/AT324425B/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
AT873570A 1969-11-10 1970-09-28 Verfahren zur herstellung eines planartransistors mit vergrabener kollektorschicht AT324425B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US87501369A 1969-11-10 1969-11-10

Publications (1)

Publication Number Publication Date
AT324425B true AT324425B (de) 1975-08-25

Family

ID=25365050

Family Applications (1)

Application Number Title Priority Date Filing Date
AT873570A AT324425B (de) 1969-11-10 1970-09-28 Verfahren zur herstellung eines planartransistors mit vergrabener kollektorschicht

Country Status (13)

Country Link
US (1) US3709746A (de)
JP (1) JPS4926752B1 (de)
AT (1) AT324425B (de)
BE (1) BE758682A (de)
CA (1) CA924823A (de)
CH (1) CH506890A (de)
DE (1) DE2047241C3 (de)
DK (1) DK140869B (de)
ES (1) ES384679A1 (de)
FR (1) FR2067056B1 (de)
GB (1) GB1304246A (de)
NL (1) NL7016393A (de)
SE (1) SE352783B (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3940783A (en) * 1974-02-11 1976-02-24 Signetics Corporation Majority carriers-variable threshold rectifier and/or voltage reference semiconductor structure
US4193080A (en) * 1975-02-20 1980-03-11 Matsushita Electronics Corporation Non-volatile memory device
US4258379A (en) * 1978-09-25 1981-03-24 Hitachi, Ltd. IIL With in and outdiffused emitter pocket
US4252581A (en) * 1979-10-01 1981-02-24 International Business Machines Corporation Selective epitaxy method for making filamentary pedestal transistor
US4644383A (en) * 1985-04-08 1987-02-17 Harris Corporation Subcollector for oxide and junction isolated IC's
DE3679618D1 (de) * 1985-08-26 1991-07-11 Matsushita Electric Ind Co Ltd Halbleiterbauelement mit einem abrupten uebergang und verfahren zu seiner herstellung mittels epitaxie.
GB9013926D0 (en) * 1990-06-22 1990-08-15 Gen Electric Co Plc A vertical pnp transistor
JPH05109753A (ja) * 1991-08-16 1993-04-30 Toshiba Corp バイポーラトランジスタ
KR100595899B1 (ko) * 2003-12-31 2006-06-30 동부일렉트로닉스 주식회사 이미지 센서 및 그 제조방법
US20080087978A1 (en) * 2006-10-11 2008-04-17 Coolbaugh Douglas D Semiconductor structure and method of manufacture
JP6487386B2 (ja) 2016-07-22 2019-03-20 ファナック株式会社 時刻精度を維持するためのサーバ、方法、プログラム、記録媒体、及びシステム

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1050478A (de) * 1962-10-08
FR1559608A (de) * 1967-06-30 1969-03-14

Also Published As

Publication number Publication date
CH506890A (de) 1971-04-30
BE758682A (fr) 1971-05-10
JPS4926752B1 (de) 1974-07-11
GB1304246A (de) 1973-01-24
US3709746A (en) 1973-01-09
NL7016393A (de) 1971-05-12
FR2067056B1 (de) 1974-08-23
FR2067056A1 (de) 1971-08-13
DE2047241B2 (de) 1978-06-22
DE2047241A1 (de) 1971-05-19
ES384679A1 (es) 1973-03-16
DK140869B (da) 1979-11-26
CA924823A (en) 1973-04-17
SE352783B (de) 1973-01-08
DE2047241C3 (de) 1979-03-08
DK140869C (de) 1980-04-28

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Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee