BE758682A - Procede de fabrication d'un transistor a socle - Google Patents

Procede de fabrication d'un transistor a socle

Info

Publication number
BE758682A
BE758682A BE758682DA BE758682A BE 758682 A BE758682 A BE 758682A BE 758682D A BE758682D A BE 758682DA BE 758682 A BE758682 A BE 758682A
Authority
BE
Belgium
Prior art keywords
manufacturing process
base transistor
transistor
base
manufacturing
Prior art date
Application number
Other languages
English (en)
French (fr)
Inventor
D Dewitt
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of BE758682A publication Critical patent/BE758682A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
BE758682D 1969-11-10 Procede de fabrication d'un transistor a socle BE758682A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US87501369A 1969-11-10 1969-11-10

Publications (1)

Publication Number Publication Date
BE758682A true BE758682A (fr) 1971-05-10

Family

ID=25365050

Family Applications (1)

Application Number Title Priority Date Filing Date
BE758682D BE758682A (fr) 1969-11-10 Procede de fabrication d'un transistor a socle

Country Status (13)

Country Link
US (1) US3709746A (de)
JP (1) JPS4926752B1 (de)
AT (1) AT324425B (de)
BE (1) BE758682A (de)
CA (1) CA924823A (de)
CH (1) CH506890A (de)
DE (1) DE2047241C3 (de)
DK (1) DK140869B (de)
ES (1) ES384679A1 (de)
FR (1) FR2067056B1 (de)
GB (1) GB1304246A (de)
NL (1) NL7016393A (de)
SE (1) SE352783B (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3940783A (en) * 1974-02-11 1976-02-24 Signetics Corporation Majority carriers-variable threshold rectifier and/or voltage reference semiconductor structure
US4193080A (en) * 1975-02-20 1980-03-11 Matsushita Electronics Corporation Non-volatile memory device
US4258379A (en) * 1978-09-25 1981-03-24 Hitachi, Ltd. IIL With in and outdiffused emitter pocket
US4252581A (en) * 1979-10-01 1981-02-24 International Business Machines Corporation Selective epitaxy method for making filamentary pedestal transistor
US4644383A (en) * 1985-04-08 1987-02-17 Harris Corporation Subcollector for oxide and junction isolated IC's
DE3679618D1 (de) * 1985-08-26 1991-07-11 Matsushita Electric Ind Co Ltd Halbleiterbauelement mit einem abrupten uebergang und verfahren zu seiner herstellung mittels epitaxie.
GB9013926D0 (en) * 1990-06-22 1990-08-15 Gen Electric Co Plc A vertical pnp transistor
JPH05109753A (ja) * 1991-08-16 1993-04-30 Toshiba Corp バイポーラトランジスタ
KR100595899B1 (ko) * 2003-12-31 2006-06-30 동부일렉트로닉스 주식회사 이미지 센서 및 그 제조방법
US20080087978A1 (en) * 2006-10-11 2008-04-17 Coolbaugh Douglas D Semiconductor structure and method of manufacture
JP6487386B2 (ja) 2016-07-22 2019-03-20 ファナック株式会社 時刻精度を維持するためのサーバ、方法、プログラム、記録媒体、及びシステム

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1050478A (de) * 1962-10-08
FR1559608A (de) * 1967-06-30 1969-03-14

Also Published As

Publication number Publication date
JPS4926752B1 (de) 1974-07-11
CA924823A (en) 1973-04-17
FR2067056A1 (de) 1971-08-13
FR2067056B1 (de) 1974-08-23
GB1304246A (de) 1973-01-24
SE352783B (de) 1973-01-08
ES384679A1 (es) 1973-03-16
CH506890A (de) 1971-04-30
DE2047241C3 (de) 1979-03-08
DK140869C (de) 1980-04-28
NL7016393A (de) 1971-05-12
DE2047241B2 (de) 1978-06-22
DK140869B (da) 1979-11-26
US3709746A (en) 1973-01-09
DE2047241A1 (de) 1971-05-19
AT324425B (de) 1975-08-25

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Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: INTERNATIONAL BUSINESS MACHINES CORP.

Effective date: 19861130