CH506890A - Verfahren zur Herstellung integrierter Schaltungen - Google Patents

Verfahren zur Herstellung integrierter Schaltungen

Info

Publication number
CH506890A
CH506890A CH1560070A CH1560070A CH506890A CH 506890 A CH506890 A CH 506890A CH 1560070 A CH1560070 A CH 1560070A CH 1560070 A CH1560070 A CH 1560070A CH 506890 A CH506890 A CH 506890A
Authority
CH
Switzerland
Prior art keywords
integrated circuits
manufacturing integrated
manufacturing
circuits
integrated
Prior art date
Application number
CH1560070A
Other languages
English (en)
Inventor
Dewitt David
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of CH506890A publication Critical patent/CH506890A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
CH1560070A 1969-11-10 1970-10-21 Verfahren zur Herstellung integrierter Schaltungen CH506890A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US87501369A 1969-11-10 1969-11-10

Publications (1)

Publication Number Publication Date
CH506890A true CH506890A (de) 1971-04-30

Family

ID=25365050

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1560070A CH506890A (de) 1969-11-10 1970-10-21 Verfahren zur Herstellung integrierter Schaltungen

Country Status (13)

Country Link
US (1) US3709746A (de)
JP (1) JPS4926752B1 (de)
AT (1) AT324425B (de)
BE (1) BE758682A (de)
CA (1) CA924823A (de)
CH (1) CH506890A (de)
DE (1) DE2047241C3 (de)
DK (1) DK140869B (de)
ES (1) ES384679A1 (de)
FR (1) FR2067056B1 (de)
GB (1) GB1304246A (de)
NL (1) NL7016393A (de)
SE (1) SE352783B (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3940783A (en) * 1974-02-11 1976-02-24 Signetics Corporation Majority carriers-variable threshold rectifier and/or voltage reference semiconductor structure
US4193080A (en) * 1975-02-20 1980-03-11 Matsushita Electronics Corporation Non-volatile memory device
US4258379A (en) * 1978-09-25 1981-03-24 Hitachi, Ltd. IIL With in and outdiffused emitter pocket
US4252581A (en) * 1979-10-01 1981-02-24 International Business Machines Corporation Selective epitaxy method for making filamentary pedestal transistor
US4644383A (en) * 1985-04-08 1987-02-17 Harris Corporation Subcollector for oxide and junction isolated IC's
EP0214802B1 (de) * 1985-08-26 1991-06-05 Matsushita Electric Industrial Co., Ltd. Halbleiterbauelement mit einem abrupten Übergang und Verfahren zu seiner Herstellung mittels Epitaxie
GB9013926D0 (en) * 1990-06-22 1990-08-15 Gen Electric Co Plc A vertical pnp transistor
JPH05109753A (ja) * 1991-08-16 1993-04-30 Toshiba Corp バイポーラトランジスタ
KR100595899B1 (ko) * 2003-12-31 2006-06-30 동부일렉트로닉스 주식회사 이미지 센서 및 그 제조방법
US20080087978A1 (en) * 2006-10-11 2008-04-17 Coolbaugh Douglas D Semiconductor structure and method of manufacture
JP6487386B2 (ja) 2016-07-22 2019-03-20 ファナック株式会社 時刻精度を維持するためのサーバ、方法、プログラム、記録媒体、及びシステム

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL297821A (de) * 1962-10-08
FR1559608A (de) * 1967-06-30 1969-03-14

Also Published As

Publication number Publication date
BE758682A (fr) 1971-05-10
DE2047241A1 (de) 1971-05-19
GB1304246A (de) 1973-01-24
US3709746A (en) 1973-01-09
DE2047241C3 (de) 1979-03-08
JPS4926752B1 (de) 1974-07-11
FR2067056B1 (de) 1974-08-23
DK140869B (da) 1979-11-26
DK140869C (de) 1980-04-28
SE352783B (de) 1973-01-08
FR2067056A1 (de) 1971-08-13
CA924823A (en) 1973-04-17
NL7016393A (de) 1971-05-12
AT324425B (de) 1975-08-25
DE2047241B2 (de) 1978-06-22
ES384679A1 (es) 1973-03-16

Similar Documents

Publication Publication Date Title
DE1957788B2 (de) Verfahren zur erzielung einer optimalen ausbeute bei der herstellung von integrierten schaltungen
DE1918845B2 (de) Verfahren zur herstellung von halbleiteranordnungen
CH547826A (de) Verfahren zur herstellung von mercaptosilanen.
CH548368A (de) Verfahren zur herstellung neuer 2-aminoalkoxy-styrole.
CH508281A (de) Verfahren zur Herstellung von integrierten Schaltungen
CH506890A (de) Verfahren zur Herstellung integrierter Schaltungen
CH559000A (de) Verfahren zur herstellung von mikroelektronischen schaltungen.
CH492381A (de) Verfahren zur Herstellung von gedruckten Schaltungen
CH452062A (de) Verfahren zur Herstellung von integrierten Schaltungen
CH484523A (de) Verfahren zur Herstellung von monolithischen Schaltungen
CH558799A (de) Verfahren zur herstellung von naphthalimidderivaten.
CH549010A (de) Verfahren zur herstellung von novenamin.
CH514930A (de) Kleinschütz und Verfahren zur Herstellung desselben
CH557797A (de) Verfahren zur herstellung von ortho-nitro-(beta)-aminostyrolen.
CH550749A (de) Verfahren zur herstellung von duengererde.
CH548345A (de) Verfahren zur herstellung von vanadinoxitrichlorid.
AT303686B (de) Verfahren zur Herstellung von Halbleiterverbindungen
CH555826A (de) Verfahren zur herstellung von indolderivaten.
AT335078B (de) Verfahren zur herstellung von 3beta-hydroxy-5alfa-cardenoliden und -bufadienoliden
CH504784A (de) Vorrichtung zur Herstellung von integrierten Schaltungen
CH555702A (de) Verfahren zur herstellung von feingeteiltem feststoff.
CH552570A (de) Verfahren zur herstellung von (2-cyanaethyl)-ketonen.
AT334978B (de) Verfahren zur herstellung mehrerer halbleiterbauelemente
CH474863A (de) Verfahren zur Herstellung eines Zwischenproduktes für integrierte Schaltungen
CH558085A (de) Verfahren zur herstellung integrierter schaltungen.

Legal Events

Date Code Title Description
PL Patent ceased