CH452062A - Verfahren zur Herstellung von integrierten Schaltungen - Google Patents
Verfahren zur Herstellung von integrierten SchaltungenInfo
- Publication number
- CH452062A CH452062A CH1829766A CH1829766A CH452062A CH 452062 A CH452062 A CH 452062A CH 1829766 A CH1829766 A CH 1829766A CH 1829766 A CH1829766 A CH 1829766A CH 452062 A CH452062 A CH 452062A
- Authority
- CH
- Switzerland
- Prior art keywords
- manufacture
- integrated circuits
- circuits
- integrated
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/2636—Bombardment with radiation with high-energy radiation for heating, e.g. electron beam heating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/905—Electron beam
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/026—Deposition thru hole in mask
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/071—Heating, selective
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/974—Substrate surface preparation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/977—Thinning or removal of substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US51809966A | 1966-01-03 | 1966-01-03 | |
US75535668A | 1968-08-26 | 1968-08-26 |
Publications (1)
Publication Number | Publication Date |
---|---|
CH452062A true CH452062A (de) | 1968-05-31 |
Family
ID=27059345
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH1829766A CH452062A (de) | 1966-01-03 | 1966-12-22 | Verfahren zur Herstellung von integrierten Schaltungen |
Country Status (7)
Country | Link |
---|---|
US (2) | US3453723A (de) |
CH (1) | CH452062A (de) |
DE (1) | DE1564962C3 (de) |
FR (1) | FR1506152A (de) |
GB (1) | GB1165016A (de) |
NL (1) | NL6616548A (de) |
SE (1) | SE325337B (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3549432A (en) * | 1968-07-15 | 1970-12-22 | Texas Instruments Inc | Multilayer microelectronic circuitry techniques |
US3789276A (en) * | 1968-07-15 | 1974-01-29 | Texas Instruments Inc | Multilayer microelectronic circuitry techniques |
US3860783A (en) * | 1970-10-19 | 1975-01-14 | Bell Telephone Labor Inc | Ion etching through a pattern mask |
IT1068535B (it) * | 1975-11-03 | 1985-03-21 | Ibm | Apparecchio e processo elettrolito grafico |
JPS5257783A (en) * | 1975-11-06 | 1977-05-12 | Toshiba Corp | Semiconductor wafer |
US4103073A (en) * | 1976-01-09 | 1978-07-25 | Dios, Inc. | Microsubstrates and method for making micropattern devices |
US4680087A (en) * | 1986-01-17 | 1987-07-14 | Allied Corporation | Etching of dielectric layers with electrons in the presence of sulfur hexafluoride |
US6528934B1 (en) | 2000-05-30 | 2003-03-04 | Chunghwa Picture Tubes Ltd. | Beam forming region for electron gun |
US7338259B2 (en) * | 2004-03-02 | 2008-03-04 | United Technologies Corporation | High modulus metallic component for high vibratory operation |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE891113C (de) * | 1951-09-08 | 1953-09-24 | Licentia Gmbh | Verfahren zur Herstellung elektrisch unsymmetrisch leitender Systeme |
US3340601A (en) * | 1963-07-17 | 1967-09-12 | United Aircraft Corp | Alloy diffused transistor |
US3290753A (en) * | 1963-08-19 | 1966-12-13 | Bell Telephone Labor Inc | Method of making semiconductor integrated circuit elements |
US3312879A (en) * | 1964-07-29 | 1967-04-04 | North American Aviation Inc | Semiconductor structure including opposite conductivity segments |
-
1966
- 1966-01-03 US US518099A patent/US3453723A/en not_active Expired - Lifetime
- 1966-11-14 GB GB50902/66A patent/GB1165016A/en not_active Expired
- 1966-11-24 NL NL6616548A patent/NL6616548A/xx unknown
- 1966-12-22 CH CH1829766A patent/CH452062A/de unknown
- 1966-12-27 FR FR88915A patent/FR1506152A/fr not_active Expired
- 1966-12-30 DE DE1564962A patent/DE1564962C3/de not_active Expired
-
1967
- 1967-01-03 SE SE00119/67A patent/SE325337B/xx unknown
-
1968
- 1968-08-26 US US755356A patent/US3575733A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
GB1165016A (en) | 1969-09-24 |
FR1506152A (fr) | 1967-12-15 |
DE1564962B2 (de) | 1973-09-27 |
DE1564962A1 (de) | 1970-10-01 |
DE1564962C3 (de) | 1974-04-18 |
NL6616548A (de) | 1967-07-04 |
US3453723A (en) | 1969-07-08 |
US3575733A (en) | 1971-04-20 |
SE325337B (de) | 1970-06-29 |
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