NL297821A - - Google Patents
Info
- Publication number
- NL297821A NL297821A NL297821DA NL297821A NL 297821 A NL297821 A NL 297821A NL 297821D A NL297821D A NL 297821DA NL 297821 A NL297821 A NL 297821A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/037—Diffusion-deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/145—Shaped junctions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/151—Simultaneous diffusion
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US228807A US3244950A (en) | 1962-10-08 | 1962-10-08 | Reverse epitaxial transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
NL297821A true NL297821A (de) |
Family
ID=22858627
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL297821D NL297821A (de) | 1962-10-08 |
Country Status (4)
Country | Link |
---|---|
US (1) | US3244950A (de) |
DE (1) | DE1222166B (de) |
GB (1) | GB1050478A (de) |
NL (1) | NL297821A (de) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3328214A (en) * | 1963-04-22 | 1967-06-27 | Siliconix Inc | Process for manufacturing horizontal transistor structure |
NL143074B (nl) * | 1963-12-13 | 1974-08-15 | Philips Nv | Transistor. |
GB1071294A (en) * | 1963-12-17 | 1967-06-07 | Mullard Ltd | Improvements in and relating to the manufacture of transistors |
US3325707A (en) * | 1965-04-26 | 1967-06-13 | Rca Corp | Transistor with low collector capacitance and method of making same |
US3440498A (en) * | 1966-03-14 | 1969-04-22 | Nat Semiconductor Corp | Contacts for insulation isolated semiconductor integrated circuitry |
US3443174A (en) * | 1966-05-17 | 1969-05-06 | Sprague Electric Co | L-h junction lateral transistor |
US3475665A (en) * | 1966-08-03 | 1969-10-28 | Trw Inc | Electrode lead for semiconductor active devices |
US3453504A (en) * | 1966-08-11 | 1969-07-01 | Siliconix Inc | Unipolar transistor |
US3460009A (en) * | 1967-12-29 | 1969-08-05 | Westinghouse Electric Corp | Constant gain power transistor |
DE1764241C3 (de) * | 1968-04-30 | 1978-09-07 | Ibm Deutschland Gmbh, 7000 Stuttgart | Monolithisch integrierte Halbleiterschaltung |
JPS4831021B1 (de) * | 1968-09-14 | 1973-09-26 | ||
US3659675A (en) * | 1969-06-30 | 1972-05-02 | Transportation Specialists Inc | Lubrication system and reservoir therefor |
US3631313A (en) * | 1969-11-06 | 1971-12-28 | Intel Corp | Resistor for integrated circuit |
US3717515A (en) * | 1969-11-10 | 1973-02-20 | Ibm | Process for fabricating a pedestal transistor |
BE758745A (fr) * | 1969-11-10 | 1971-05-10 | Westinghouse Electric Corp | Perfectionnements aux ou en rapport avec les dispositifs semiconducteurs |
BE758682A (fr) * | 1969-11-10 | 1971-05-10 | Ibm | Procede de fabrication d'un transistor a socle |
US3657612A (en) * | 1970-04-20 | 1972-04-18 | Ibm | Inverse transistor with high current gain |
US3702947A (en) * | 1970-10-21 | 1972-11-14 | Itt | Monolithic darlington transistors with common collector and seperate subcollectors |
DE2211384A1 (de) * | 1971-03-20 | 1972-11-30 | Philips Nv | Schaltungsanordnung mit mindestens einem strahlungsgespeisten Schaltungselement und Halbleiteranordnung zur Anwendung in einer derartigen Schaltungsanordnung |
US4032372A (en) * | 1971-04-28 | 1977-06-28 | International Business Machines Corporation | Epitaxial outdiffusion technique for integrated bipolar and field effect transistors |
US3814997A (en) * | 1971-06-11 | 1974-06-04 | Hitachi Ltd | Semiconductor device suitable for impatt diodes or varactor diodes |
US3891479A (en) * | 1971-10-19 | 1975-06-24 | Motorola Inc | Method of making a high current Schottky barrier device |
US3865648A (en) * | 1972-01-07 | 1975-02-11 | Ibm | Method of making a common emitter transistor integrated circuit structure |
US4171995A (en) * | 1975-10-20 | 1979-10-23 | Semiconductor Research Foundation | Epitaxial deposition process for producing an electrostatic induction type thyristor |
DE2554426C3 (de) * | 1975-12-03 | 1979-06-21 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Erzeugung einer lokal hohen inversen Stromverstärkung bei einem Planartransistor sowie nach diesem Verfahren hergestellter invers betriebener Transistor |
US4170501A (en) * | 1978-02-15 | 1979-10-09 | Rca Corporation | Method of making a semiconductor integrated circuit device utilizing simultaneous outdiffusion and autodoping during epitaxial deposition |
US4328611A (en) * | 1980-04-28 | 1982-05-11 | Trw Inc. | Method for manufacture of an interdigitated collector structure utilizing etch and refill techniques |
US4812890A (en) * | 1985-11-19 | 1989-03-14 | Thompson-Csf Components Corporation | Bipolar microwave integratable transistor |
JPH04261026A (ja) * | 1991-01-08 | 1992-09-17 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE519804A (de) * | 1952-05-09 | |||
US2821493A (en) * | 1954-03-18 | 1958-01-28 | Hughes Aircraft Co | Fused junction transistors with regrown base regions |
NL111773C (de) * | 1958-08-07 | |||
US3070466A (en) * | 1959-04-30 | 1962-12-25 | Ibm | Diffusion in semiconductor material |
US2981877A (en) * | 1959-07-30 | 1961-04-25 | Fairchild Semiconductor | Semiconductor device-and-lead structure |
US3133336A (en) * | 1959-12-30 | 1964-05-19 | Ibm | Semiconductor device fabrication |
NL260481A (de) * | 1960-02-08 | |||
NL258408A (de) * | 1960-06-10 |
-
0
- GB GB1050478D patent/GB1050478A/en active Active
- NL NL297821D patent/NL297821A/xx unknown
-
1962
- 1962-10-08 US US228807A patent/US3244950A/en not_active Expired - Lifetime
-
1963
- 1963-10-01 DE DEF40885A patent/DE1222166B/de active Pending
Also Published As
Publication number | Publication date |
---|---|
GB1050478A (de) | |
US3244950A (en) | 1966-04-05 |
DE1222166B (de) | 1966-08-04 |