ES375538A1 - Metodo para la fabricacion de dispositivos semiconductores. - Google Patents

Metodo para la fabricacion de dispositivos semiconductores.

Info

Publication number
ES375538A1
ES375538A1 ES375538A ES375538A ES375538A1 ES 375538 A1 ES375538 A1 ES 375538A1 ES 375538 A ES375538 A ES 375538A ES 375538 A ES375538 A ES 375538A ES 375538 A1 ES375538 A1 ES 375538A1
Authority
ES
Spain
Prior art keywords
substrate
base solution
semiconductor devices
zinc
gallium arsenide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES375538A
Other languages
English (en)
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of ES375538A1 publication Critical patent/ES375538A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/061—Tipping system, e.g. by rotation
    • H10P14/263—
    • H10P14/265—
    • H10P14/2911—
    • H10P14/2926—
    • H10P14/3421—
    • H10P14/3444—
    • H10P32/14—
    • H10P32/174—
    • H10P95/00—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/017—Clean surfaces
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/039—Displace P-N junction
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/067—Graded energy gap
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
ES375538A 1968-12-23 1969-12-17 Metodo para la fabricacion de dispositivos semiconductores. Expired ES375538A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US78622668A 1968-12-23 1968-12-23

Publications (1)

Publication Number Publication Date
ES375538A1 true ES375538A1 (es) 1972-05-16

Family

ID=25137965

Family Applications (1)

Application Number Title Priority Date Filing Date
ES375538A Expired ES375538A1 (es) 1968-12-23 1969-12-17 Metodo para la fabricacion de dispositivos semiconductores.

Country Status (10)

Country Link
US (1) US3560276A (enExample)
JP (1) JPS4842037B1 (enExample)
BE (1) BE743335A (enExample)
CH (1) CH512824A (enExample)
DE (1) DE1963131B2 (enExample)
ES (1) ES375538A1 (enExample)
FR (1) FR2026932B1 (enExample)
GB (1) GB1293408A (enExample)
NL (1) NL143073B (enExample)
SE (1) SE345344B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3874952A (en) * 1969-06-30 1975-04-01 Ibm Method of doping during epitaxy
US3664294A (en) * 1970-01-29 1972-05-23 Fairchild Camera Instr Co Push-pull structure for solution epitaxial growth of iii{14 v compounds
US3648654A (en) * 1970-03-16 1972-03-14 Bell Telephone Labor Inc Vertical liquid phase crystal growth apparatus
US4045257A (en) * 1971-03-09 1977-08-30 Jenoptik Jena G.M.B.H. III(A)-(VB) Type luminescent diode
JPS5213510B2 (enExample) * 1973-02-26 1977-04-14
JPS535867B2 (enExample) * 1973-03-08 1978-03-02
US3884642A (en) * 1973-07-23 1975-05-20 Applied Materials Inc Radiantly heated crystal growing furnace
DE19709584A1 (de) * 1997-03-08 1998-09-10 Dynamit Nobel Ag Gasgenerator

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3419742A (en) * 1965-11-24 1968-12-31 Monsanto Co Injection-luminescent gaas diodes having a graded p-n junction

Also Published As

Publication number Publication date
NL143073B (nl) 1974-08-15
CH512824A (de) 1971-09-15
GB1293408A (en) 1972-10-18
DE1963131A1 (de) 1970-06-25
FR2026932A1 (enExample) 1970-09-25
US3560276A (en) 1971-02-02
BE743335A (enExample) 1970-05-28
FR2026932B1 (enExample) 1973-12-21
NL6918926A (enExample) 1970-06-25
DE1963131B2 (de) 1973-06-28
JPS4842037B1 (enExample) 1973-12-10
SE345344B (enExample) 1972-05-23

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