GB765190A - Improvements in or relating to the treatment of electric semi-conducting materials - Google Patents

Improvements in or relating to the treatment of electric semi-conducting materials

Info

Publication number
GB765190A
GB765190A GB17285/54A GB1728554A GB765190A GB 765190 A GB765190 A GB 765190A GB 17285/54 A GB17285/54 A GB 17285/54A GB 1728554 A GB1728554 A GB 1728554A GB 765190 A GB765190 A GB 765190A
Authority
GB
United Kingdom
Prior art keywords
semi
impurity
gold
germanium
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB17285/54A
Inventor
Simon Ernst Mayer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB17285/54A priority Critical patent/GB765190A/en
Publication of GB765190A publication Critical patent/GB765190A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

765,190. Semi-conductor devices. STANDARD TELEPHONES & CABLES, Ltd. June 3, 1955 [June 11, 1954]. No. 17285/54. Class 37. A method of producing a PN junction in a body of semi-conductor by thermal diffusion of an appropriate impurity into one surface of the body is characterized in that the remaining surfaces of the body are coated with an element which is different from, but isomorphous with, the semi-conductor material so that unwanted spreading of the impurity is prevented. The element may form part of a compound. In one example a body 1 of N-type germanium is provided with a thin film 3 of silicon monoxide by evaporation, and a film 4 of acceptor impurity, such as gold. Heat treatment for 4 hours at 850‹ C. is then applied to diffuse the gold into the germanium, to provide a PN junction. Gold may also be applied to the opposite face and diffused, so as to provide a PNP arrangement. Alternatively, an NPN arrangement can be provided by applying a donor impurity to the converted P region, and diffusing, to reconvert a region back to N-type. Silicon may be used in place of germanium, and aluminium, gallium or indium as acceptors, and phosphorus, arsenic or bismuth as donors. Other elements from Group 4 may be used as the isomorphous element. After the diffusion heat treatment, annealing at a temperature of 500‹ C. may be provided to remove lattice defects. Specification 753,133 is referred to.
GB17285/54A 1954-06-11 1954-06-11 Improvements in or relating to the treatment of electric semi-conducting materials Expired GB765190A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB17285/54A GB765190A (en) 1954-06-11 1954-06-11 Improvements in or relating to the treatment of electric semi-conducting materials

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB17285/54A GB765190A (en) 1954-06-11 1954-06-11 Improvements in or relating to the treatment of electric semi-conducting materials

Publications (1)

Publication Number Publication Date
GB765190A true GB765190A (en) 1957-01-02

Family

ID=10092525

Family Applications (1)

Application Number Title Priority Date Filing Date
GB17285/54A Expired GB765190A (en) 1954-06-11 1954-06-11 Improvements in or relating to the treatment of electric semi-conducting materials

Country Status (1)

Country Link
GB (1) GB765190A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1133038B (en) * 1960-05-10 1962-07-12 Siemens Ag Semiconductor component with an essentially single-crystal semiconductor body and four zones of alternating conductivity type
US3228812A (en) * 1962-12-04 1966-01-11 Dickson Electronics Corp Method of forming semiconductors
US3305411A (en) * 1961-11-30 1967-02-21 Philips Corp Method of making a transistor using semiconductive wafer with core portion of different conductivity

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1133038B (en) * 1960-05-10 1962-07-12 Siemens Ag Semiconductor component with an essentially single-crystal semiconductor body and four zones of alternating conductivity type
US3305411A (en) * 1961-11-30 1967-02-21 Philips Corp Method of making a transistor using semiconductive wafer with core portion of different conductivity
US3228812A (en) * 1962-12-04 1966-01-11 Dickson Electronics Corp Method of forming semiconductors

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