ES340095A1 - Aparato amplificador transistorizado. - Google Patents

Aparato amplificador transistorizado.

Info

Publication number
ES340095A1
ES340095A1 ES340095A ES340095A ES340095A1 ES 340095 A1 ES340095 A1 ES 340095A1 ES 340095 A ES340095 A ES 340095A ES 340095 A ES340095 A ES 340095A ES 340095 A1 ES340095 A1 ES 340095A1
Authority
ES
Spain
Prior art keywords
resistor
transistor
field effect
junction
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES340095A
Other languages
English (en)
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES340095A1 publication Critical patent/ES340095A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/345—DC amplifiers in which all stages are DC-coupled with semiconductor devices only with field-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
ES340095A 1966-05-06 1967-05-03 Aparato amplificador transistorizado. Expired ES340095A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6606165A NL6606165A (cs) 1966-05-06 1966-05-06

Publications (1)

Publication Number Publication Date
ES340095A1 true ES340095A1 (es) 1968-06-01

Family

ID=19796516

Family Applications (1)

Application Number Title Priority Date Filing Date
ES340095A Expired ES340095A1 (es) 1966-05-06 1967-05-03 Aparato amplificador transistorizado.

Country Status (7)

Country Link
AT (1) AT266214B (cs)
BE (1) BE698090A (cs)
CH (1) CH463578A (cs)
DE (1) DE1285551B (cs)
ES (1) ES340095A1 (cs)
GB (1) GB1189453A (cs)
NL (1) NL6606165A (cs)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52113339U (cs) * 1976-02-26 1977-08-29

Also Published As

Publication number Publication date
DE1285551B (de) 1968-12-19
CH463578A (de) 1968-10-15
GB1189453A (en) 1970-04-29
NL6606165A (cs) 1967-11-07
BE698090A (cs) 1967-11-06
AT266214B (de) 1968-11-11

Similar Documents

Publication Publication Date Title
ES341641A1 (es) Un dispositivo amplificador de ganancia controlada.
KR860009546A (ko) 고전압 증폭기 출력단 및 이를 내장한 연산증폭기
ES340095A1 (es) Aparato amplificador transistorizado.
KR870002539A (ko) 신호처리회로
ES352484A1 (es) Dispositivo de transistor.
ES400456A1 (es) Una disposicion de circuito integrado de umbral para un circuito de control automatico de ganancia en un receptor detelevision.
GB1024790A (en) Improved integrated circuit
GB983275A (en) Semiconductor networks including field-effect and junction transistors
FR1510057A (fr) Transistors intégrés complémentaires npn et pnp à collecteurs isolés
FR1377509A (fr) Amplificateurs à transistors de performances et de sécurité de fonctionnement élevées
GB1072937A (en) Field effect assembly
GB1102208A (en) Transistor bias network
ES319940A1 (es) Mejoras en transistores.
SE383445B (sv) Monolitisk halvledaranordning, innefattande komplementera pnp- och npn-transistorer av mos-felteffekttyp
GB1016975A (en) Improvements in or relating to electronic switching arrangements
GB1204526A (en) Integrated circuit transistor
GB1129258A (en) Improvements relating to electrical networks
JPS55146963A (en) Semiconductor integrated circuit
ES371849A1 (es) Un dispositivo semiconductor.
LUCE The design of high performance npn silicon transistors for microcircuit application(N-p-n double diffused Si HF transistor design for monolithic microcircuit application)
FR1261282A (fr) Amplificateur vidéo à transistors à plusieurs étages à point de fonctionnement stabilisé
FR1401907A (fr) Amplificateur à transistors
GB806559A (en) Transistor switching device
FR1299359A (fr) Circuit à amplificateur à transistors
FR1529791A (fr) Circuit comportant un transistor à effet de champ et n transistors à jonctions