GB806559A - Transistor switching device - Google Patents
Transistor switching deviceInfo
- Publication number
- GB806559A GB806559A GB5846/57A GB584657A GB806559A GB 806559 A GB806559 A GB 806559A GB 5846/57 A GB5846/57 A GB 5846/57A GB 584657 A GB584657 A GB 584657A GB 806559 A GB806559 A GB 806559A
- Authority
- GB
- United Kingdom
- Prior art keywords
- transistor
- emitter
- potential
- collector
- resistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
Landscapes
- Electronic Switches (AREA)
Abstract
806,559. Transistor relay circuits. SOURGENS, R., and CHOLLET, R. Feb. 21, 1957 [Feb. 29, 1956], No. 5846/57. Class 40 (6). In a circuit in which the supply potential B, Fig. 1, exceeds the safe potential to be applied across the emitter-collector path of transistors 1, 2 the emitter of each is directly connected to the collector of the preceding transistor with the final transistor connected to a load 27 and the input applied to the base-emitter path of the first transistor. The collector of each transistor is connected to the supply over resistors 22, 23 with a resistor 21 connected between the junction of the resistors 22, 23 and earth. The value of the resistors 21, 23 is so chosen that when the transistors 1, 2 are cut-off the potential existing across the emitter-collector path does not exceed the safe value. Assuming transistor 1 to be cut-off the collector potential is negative with respect to earth causing the emitter to cutoff the next transistor 2 so that the load 27 is not energized. When a negative-going potential is applied to the base of transistor 1 the transistor passes collector current, causing the collector potential to rise and therefore the emitter potential of transistor 2 so that it also passes current to energize the output load 27 which may be a relay. In order to obtain a more effective cut-off a resistor 24 of low value may be included between the resistors 22, 23 and the base of the transistor 2. In a modification, Fig. 2 (not shown), four transistors are arranged in cascade with the resistors 21, 23 graded according to a given formula to provide the correct operating potentials between emitter and base in the cut-off condition.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR806559X | 1956-02-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB806559A true GB806559A (en) | 1958-12-31 |
Family
ID=9251976
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB5846/57A Expired GB806559A (en) | 1956-02-29 | 1957-02-21 | Transistor switching device |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB806559A (en) |
-
1957
- 1957-02-21 GB GB5846/57A patent/GB806559A/en not_active Expired
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