ES272455A1 - Procedimiento para la formación de cuerpos semiconductores - Google Patents

Procedimiento para la formación de cuerpos semiconductores

Info

Publication number
ES272455A1
ES272455A1 ES272455A ES272455A ES272455A1 ES 272455 A1 ES272455 A1 ES 272455A1 ES 272455 A ES272455 A ES 272455A ES 272455 A ES272455 A ES 272455A ES 272455 A1 ES272455 A1 ES 272455A1
Authority
ES
Spain
Prior art keywords
semiconductor
conductivity type
growth plane
formation
active impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES272455A
Other languages
English (en)
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Merck and Co Inc
Original Assignee
Merck and Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck and Co Inc filed Critical Merck and Co Inc
Publication of ES272455A1 publication Critical patent/ES272455A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
ES272455A 1960-11-29 1961-11-14 Procedimiento para la formación de cuerpos semiconductores Expired ES272455A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US7234460A 1960-11-29 1960-11-29

Publications (1)

Publication Number Publication Date
ES272455A1 true ES272455A1 (es) 1962-03-01

Family

ID=22106995

Family Applications (1)

Application Number Title Priority Date Filing Date
ES272455A Expired ES272455A1 (es) 1960-11-29 1961-11-14 Procedimiento para la formación de cuerpos semiconductores

Country Status (7)

Country Link
AT (1) AT243317B (enExample)
BE (1) BE610469A (enExample)
CH (1) CH397875A (enExample)
DE (1) DE1419716B2 (enExample)
ES (1) ES272455A1 (enExample)
GB (1) GB990119A (enExample)
SE (1) SE305201B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7772097B2 (en) 2007-11-05 2010-08-10 Asm America, Inc. Methods of selectively depositing silicon-containing films
CN112626615A (zh) * 2020-12-09 2021-04-09 黄梦蕾 一种半导体分立器用硅外延生长扩散辅助设备

Also Published As

Publication number Publication date
CH397875A (fr) 1965-08-31
GB990119A (en) 1965-04-28
DE1419716B2 (de) 1971-12-16
AT243317B (de) 1965-11-10
SE305201B (enExample) 1968-10-21
DE1419716A1 (de) 1968-10-10
BE610469A (fr) 1962-05-17

Similar Documents

Publication Publication Date Title
ES409385A1 (es) Metodo para la obtencion de un dispositivo semiconductor.
ES483941A1 (es) Un procedimiento mejorado para la produccion de materiales semiconductores en forma de laminas o cintas
GB1012124A (en) Improvements in or relating to semiconductor devices
BE766699A (fr) Procede de croissance de couches semiconductrices de composes sur un substrat amorphe
GB942517A (en) A process for the production of a thin layer of a semiconducting compound
GB1224803A (en) Semiconductor devices
ES272455A1 (es) Procedimiento para la formación de cuerpos semiconductores
GB742239A (en) Improvements in barrier layer cells
JPS5356972A (en) Mesa type semiconductor device
JPS52131478A (en) Semiconductor device
JPS5322379A (en) Junction type field eff ect transistor
JPS531471A (en) Manufacture for semiconductor device
ES381695A1 (es) Perfeccionamientos en la construccion de estructuras para semiconductores.
JPS5344170A (en) Production of semiconductor device
JPS5380160A (en) Manufacture of substrate for semiconductor device
JPS5329668A (en) Production of semiconductor device
JPS5311574A (en) Production of semiconductor device
JPS538581A (en) Semiconductor memory unit
JPS5329082A (en) Semiconductor device
JPS5223265A (en) Method of processing semiconductor materials
JPS5357778A (en) Semiconductor memory
JPS5436192A (en) Manufacture for semiconductor
JPS51147292A (en) Semiconductor hall effect element and its manufacturing process
JPS5339086A (en) Semiconductor device
JPS5382185A (en) Semiconductor device