ES2427789T3 - Método de fabricación de una rejilla de difracción en CdTe o CdZnTe - Google Patents
Método de fabricación de una rejilla de difracción en CdTe o CdZnTe Download PDFInfo
- Publication number
- ES2427789T3 ES2427789T3 ES11009814T ES11009814T ES2427789T3 ES 2427789 T3 ES2427789 T3 ES 2427789T3 ES 11009814 T ES11009814 T ES 11009814T ES 11009814 T ES11009814 T ES 11009814T ES 2427789 T3 ES2427789 T3 ES 2427789T3
- Authority
- ES
- Spain
- Prior art keywords
- diffraction grating
- manufacturing
- incisions
- grid
- incident light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 229910004613 CdTe Inorganic materials 0.000 title claims abstract description 10
- 229910004611 CdZnTe Inorganic materials 0.000 title claims abstract description 10
- 239000013078 crystal Substances 0.000 claims abstract description 16
- 239000002178 crystalline material Substances 0.000 claims abstract description 11
- 238000003754 machining Methods 0.000 claims abstract description 11
- 230000015572 biosynthetic process Effects 0.000 claims abstract 5
- 229910003460 diamond Inorganic materials 0.000 claims description 15
- 239000010432 diamond Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 description 10
- 239000011521 glass Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000001680 brushing effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1847—Manufacturing methods
- G02B5/1852—Manufacturing methods using mechanical means, e.g. ruling with diamond tool, moulding
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1847—Manufacturing methods
- G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1861—Reflection gratings characterised by their structure, e.g. step profile, contours of substrate or grooves, pitch variations, materials
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B19/00—Selenium; Tellurium; Compounds thereof
- C01B19/007—Tellurides or selenides of metals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/169—Thin semiconductor films on metallic or insulating substrates
- H10F77/1696—Thin semiconductor films on metallic or insulating substrates the films including Group II-VI materials, e.g. CdTe or CdS
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010282546 | 2010-12-20 | ||
| JP2010282546 | 2010-12-20 | ||
| JP2011151277A JP5864920B2 (ja) | 2010-12-20 | 2011-07-07 | 回折格子の製造方法 |
| JP2011151277 | 2011-07-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES2427789T3 true ES2427789T3 (es) | 2013-11-04 |
Family
ID=45445703
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES11009814T Active ES2427789T3 (es) | 2010-12-20 | 2011-12-13 | Método de fabricación de una rejilla de difracción en CdTe o CdZnTe |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US9678253B2 (enExample) |
| EP (2) | EP2667228B1 (enExample) |
| JP (1) | JP5864920B2 (enExample) |
| ES (1) | ES2427789T3 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5731811B2 (ja) * | 2010-12-15 | 2015-06-10 | キヤノン株式会社 | ブレーズ型回折格子の製造方法及びそのための型の製造方法 |
| JP6032869B2 (ja) * | 2011-03-10 | 2016-11-30 | キヤノン株式会社 | ブレーズ型回折格子 |
| JP6049320B2 (ja) * | 2012-06-20 | 2016-12-21 | キヤノン株式会社 | 回折格子および回折格子の製造方法 |
| JP6049319B2 (ja) | 2012-06-20 | 2016-12-21 | キヤノン株式会社 | 回折格子および回折格子の製造方法 |
| JP5972100B2 (ja) * | 2012-08-13 | 2016-08-17 | キヤノン株式会社 | 反射型回折素子 |
| CN103499851B (zh) | 2013-09-29 | 2015-06-10 | 清华大学深圳研究生院 | 一种闪耀凹面光栅制作方法 |
| JP2015121605A (ja) * | 2013-12-20 | 2015-07-02 | キヤノン株式会社 | 回折格子および回折格子の製造方法 |
| JP6253724B2 (ja) * | 2016-07-08 | 2017-12-27 | キヤノン株式会社 | 反射型回折素子 |
| CN109407192A (zh) * | 2018-11-26 | 2019-03-01 | 中国科学院长春光学精密机械与物理研究所 | 一种光栅刻划机刻线位置测量光路的调整方法及其系统 |
| CN110788710B (zh) * | 2019-10-16 | 2021-02-19 | 中国电子科技集团公司第十一研究所 | 一种碲锌镉晶体表面磨抛装置 |
| CN112372036B (zh) * | 2020-10-30 | 2023-05-23 | 东北林业大学 | 一种亚波长闪耀光栅结构的加工方法 |
| JP7647481B2 (ja) * | 2021-10-05 | 2025-03-18 | 日本電気硝子株式会社 | イマージョン回折素子 |
| WO2025097039A1 (en) * | 2023-11-03 | 2025-05-08 | Applied Materials, Inc. | Blazed grating formation by staircase etch |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5946363B2 (ja) * | 1979-04-06 | 1984-11-12 | 日本電信電話株式会社 | 平面回折格子の製法 |
| EP0007108B1 (en) * | 1978-07-18 | 1983-04-13 | Nippon Telegraph and Telephone Public Corporation | A method of manufacturing a diffraction grating structure |
| US4376663A (en) * | 1980-11-18 | 1983-03-15 | The United States Of America As Represented By The Secretary Of The Army | Method for growing an epitaxial layer of CdTe on an epitaxial layer of HgCdTe grown on a CdTe substrate |
| US4475792A (en) * | 1982-07-27 | 1984-10-09 | The United States Of America As Represented By The Secretary Of The Navy | High resolution diffraction grating |
| JP2003075622A (ja) * | 2001-09-05 | 2003-03-12 | Toshiba Corp | 回折格子、回折格子の加工方法及び光学要素 |
| JP5669434B2 (ja) * | 2009-05-09 | 2015-02-12 | キヤノン株式会社 | 回折素子及び回折素子の製造方法及びそれを用いた分光器 |
-
2011
- 2011-07-07 JP JP2011151277A patent/JP5864920B2/ja active Active
- 2011-12-13 EP EP13004129.6A patent/EP2667228B1/en active Active
- 2011-12-13 ES ES11009814T patent/ES2427789T3/es active Active
- 2011-12-13 EP EP11009814.2A patent/EP2466346B1/en active Active
- 2011-12-20 US US13/330,748 patent/US9678253B2/en active Active
-
2017
- 2017-05-09 US US15/590,427 patent/US10168457B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP5864920B2 (ja) | 2016-02-17 |
| US20170242166A1 (en) | 2017-08-24 |
| EP2667228B1 (en) | 2017-07-19 |
| EP2667228A1 (en) | 2013-11-27 |
| US10168457B2 (en) | 2019-01-01 |
| JP2012145908A (ja) | 2012-08-02 |
| EP2466346B1 (en) | 2013-09-11 |
| US9678253B2 (en) | 2017-06-13 |
| EP2466346A1 (en) | 2012-06-20 |
| US20120156967A1 (en) | 2012-06-21 |
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