ES2416182T3 - Matriz CMUT de unión de ondas con vías conductoras - Google Patents

Matriz CMUT de unión de ondas con vías conductoras Download PDF

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Publication number
ES2416182T3
ES2416182T3 ES10714943T ES10714943T ES2416182T3 ES 2416182 T3 ES2416182 T3 ES 2416182T3 ES 10714943 T ES10714943 T ES 10714943T ES 10714943 T ES10714943 T ES 10714943T ES 2416182 T3 ES2416182 T3 ES 2416182T3
Authority
ES
Spain
Prior art keywords
layer
cmut
wafer
silicon
matrix
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
ES10714943T
Other languages
English (en)
Spanish (es)
Inventor
Sigrid Berg
Kamal Chapagain
Jon Due-Hansen
Kjell Arne Ingebrigtsen
Geir Uri Jensen
Kjersti MIDTBØ
Erik Utne Poppe
Arne RØNNEKLEIV
Dag Thorstein Wang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Norwegian University of Science and Technology NTNU
Original Assignee
Norwegian University of Science and Technology NTNU
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB0905255A external-priority patent/GB0905255D0/en
Priority claimed from GB0905256A external-priority patent/GB0905256D0/en
Priority claimed from GB0909296A external-priority patent/GB0909296D0/en
Application filed by Norwegian University of Science and Technology NTNU filed Critical Norwegian University of Science and Technology NTNU
Application granted granted Critical
Publication of ES2416182T3 publication Critical patent/ES2416182T3/es
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/0292—Electrostatic transducers, e.g. electret-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Transducers For Ultrasonic Waves (AREA)
  • Ultra Sonic Daignosis Equipment (AREA)
  • Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
  • Bipolar Transistors (AREA)
  • Pressure Sensors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
ES10714943T 2009-03-26 2010-03-26 Matriz CMUT de unión de ondas con vías conductoras Active ES2416182T3 (es)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
GB0905256 2009-03-26
GB0905255A GB0905255D0 (en) 2009-03-26 2009-03-26 Cmut array
GB0905256A GB0905256D0 (en) 2009-03-26 2009-03-26 Ultrasound transducer backing layer
GB0905255 2009-03-26
GB0909296 2009-05-28
GB0909296A GB0909296D0 (en) 2009-05-28 2009-05-28 Ultrasound transsducer damping layer
PCT/GB2010/000583 WO2010109205A2 (en) 2009-03-26 2010-03-26 Cmut array

Publications (1)

Publication Number Publication Date
ES2416182T3 true ES2416182T3 (es) 2013-07-30

Family

ID=42308937

Family Applications (1)

Application Number Title Priority Date Filing Date
ES10714943T Active ES2416182T3 (es) 2009-03-26 2010-03-26 Matriz CMUT de unión de ondas con vías conductoras

Country Status (7)

Country Link
US (1) US20120074509A1 (OSRAM)
EP (4) EP2411163B1 (OSRAM)
JP (1) JP5744002B2 (OSRAM)
CN (1) CN102427890A (OSRAM)
DK (1) DK2411163T3 (OSRAM)
ES (1) ES2416182T3 (OSRAM)
WO (1) WO2010109205A2 (OSRAM)

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WO2014151362A2 (en) 2013-03-15 2014-09-25 Butterfly Network, Inc. Monolithic ultrasonic imaging devices, systems and methods
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US9667889B2 (en) 2013-04-03 2017-05-30 Butterfly Network, Inc. Portable electronic devices with integrated imaging capabilities
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WO2015057839A1 (en) 2013-10-15 2015-04-23 Yale University Low-noise josephson junction-based directional amplifier
KR20150046637A (ko) * 2013-10-22 2015-04-30 삼성전자주식회사 광음향 이미지와 초음파 이미지를 위한 광대역 초음파 프로브
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KR20150065067A (ko) * 2013-12-04 2015-06-12 삼성전자주식회사 정전용량 미세가공 초음파 변환기 및 그 제조방법
US9948254B2 (en) 2014-02-21 2018-04-17 Yale University Wireless Josephson bifurcation amplifier
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JP6636502B2 (ja) 2014-04-18 2020-01-29 バタフライ ネットワーク，インコーポレイテッド 相補型金属酸化膜半導体（ｃｍｏｓ）ウェーハにおける超音波トランスデューサ並びに関連装置及び方法
WO2015161157A1 (en) 2014-04-18 2015-10-22 Butterfly Network, Inc. Architecture of single substrate ultrasonic imaging devices, related apparatuses, and methods
US9067779B1 (en) 2014-07-14 2015-06-30 Butterfly Network, Inc. Microfabricated ultrasonic transducers and related apparatus and methods
EP3233311B1 (en) 2014-12-21 2021-12-08 Chirp Microsystems, Inc. Piezoelectric micromachined ultrasonic transducers with low stress sensitivity and methods of fabrication
US10461385B2 (en) 2015-02-27 2019-10-29 Yale University Josephson junction-based circulators and related systems and methods
WO2016138408A1 (en) 2015-02-27 2016-09-01 Yale University Techniques for producing quantum amplifiers and related systems and methods
KR102684587B1 (ko) 2015-02-27 2024-07-12 예일 유니버시티 평면 큐비트를 비-평면 공진기에 결합하기 위한 기술 및 관련 시스템 및 방법
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CN106998522B (zh) * 2016-01-25 2023-07-28 中国科学院苏州纳米技术与纳米仿生研究所 微电容超声传感器
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Also Published As

Publication number Publication date
CN102427890A (zh) 2012-04-25
EP2669019A1 (en) 2013-12-04
EP2659987A1 (en) 2013-11-06
JP5744002B2 (ja) 2015-07-01
JP2012521704A (ja) 2012-09-13
WO2010109205A3 (en) 2011-03-03
EP2411163B1 (en) 2013-05-15
US20120074509A1 (en) 2012-03-29
EP2662153A1 (en) 2013-11-13
WO2010109205A2 (en) 2010-09-30
EP2411163A2 (en) 2012-02-01
DK2411163T3 (da) 2013-06-10

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