ES2400278R1 - Sensores de imagen de cancelacion de ruido - Google Patents

Sensores de imagen de cancelacion de ruido

Info

Publication number
ES2400278R1
ES2400278R1 ES201190041A ES201190041A ES2400278R1 ES 2400278 R1 ES2400278 R1 ES 2400278R1 ES 201190041 A ES201190041 A ES 201190041A ES 201190041 A ES201190041 A ES 201190041A ES 2400278 R1 ES2400278 R1 ES 2400278R1
Authority
ES
Spain
Prior art keywords
signal
output signal
light response
noise
control circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
ES201190041A
Other languages
English (en)
Other versions
ES2400278A2 (es
ES2400278B1 (es
Inventor
Hiok Nam Tay
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of ES2400278A2 publication Critical patent/ES2400278A2/es
Publication of ES2400278R1 publication Critical patent/ES2400278R1/es
Application granted granted Critical
Publication of ES2400278B1 publication Critical patent/ES2400278B1/es
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/65—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Facsimile Image Signal Circuits (AREA)

Abstract

Un sensor de imagen que tiene una pluralidad de píxeles dentro de una matriz de píxeles acoplada a un circuito de control y uno o varios circuitos de sustracción. El circuito de control puede causar que un transistor de salida acoplado a un píxel proporcione una señal de salida de primera referencia, una señal de salida de reinicio común y una señal de salida de primer reinicio de nodo de detección, entre los cuales un circuito de sustracción puede formar una diferencia ponderada para crear una señal de ruido. El circuito de control puede causar que el transistor de salida proporcione una señal de salida de segundo reinicio de nodo de detección, una señal de salida de respuesta a luz y una señal de salida de segunda referencia, entre los cuales un circuito de sustracción puede formar una diferencia ponderada para crear una señal normalizada de respuesta a luz. La señal de salida de respuesta a luz corresponde a la imagen que va a ser capturada por el sensor. La señal de ruido puede deducirse de la señal normalizada de respuesta a luz para generar una señal sin-ruido.
ES201190041A 2008-12-16 2009-12-16 Sensores de imagen de cancelación de ruido Expired - Fee Related ES2400278B1 (es)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US13808508P 2008-12-16 2008-12-16
US61/138,085 2008-12-16
US25782509P 2009-11-03 2009-11-03
US61/257,825 2009-11-03
PCT/IB2009/055799 WO2010044081A2 (en) 2008-12-16 2009-12-16 Noise-cancelling image sensors

Publications (3)

Publication Number Publication Date
ES2400278A2 ES2400278A2 (es) 2013-04-08
ES2400278R1 true ES2400278R1 (es) 2013-08-27
ES2400278B1 ES2400278B1 (es) 2014-06-24

Family

ID=42106985

Family Applications (1)

Application Number Title Priority Date Filing Date
ES201190041A Expired - Fee Related ES2400278B1 (es) 2008-12-16 2009-12-16 Sensores de imagen de cancelación de ruido

Country Status (13)

Country Link
US (4) US8451348B2 (es)
EP (1) EP2377156A2 (es)
JP (2) JP5732707B2 (es)
CN (1) CN102257616B (es)
BR (1) BRPI0923519A2 (es)
DE (1) DE112009003725T5 (es)
ES (1) ES2400278B1 (es)
GB (1) GB2480927B (es)
HK (1) HK1165157A1 (es)
MX (1) MX2011006316A (es)
SG (1) SG172124A1 (es)
TW (2) TWI618412B (es)
WO (1) WO2010044081A2 (es)

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JP6056126B2 (ja) * 2011-10-21 2017-01-11 ソニー株式会社 固体撮像装置およびカメラシステム
US10197501B2 (en) 2011-12-12 2019-02-05 Kla-Tencor Corporation Electron-bombarded charge-coupled device and inspection systems using EBCCD detectors
JP5990080B2 (ja) * 2012-10-05 2016-09-07 キヤノン株式会社 撮像システム、および撮像システムの駆動方法
JP6149408B2 (ja) * 2013-01-29 2017-06-21 株式会社リコー 固体撮像素子、画像読取装置及び画像形成装置
CN103986889B (zh) * 2013-02-08 2017-06-13 豪威科技股份有限公司 用于传感器故障检测的系统及方法
US9767986B2 (en) 2014-08-29 2017-09-19 Kla-Tencor Corporation Scanning electron microscope and methods of inspecting and reviewing samples
US10748730B2 (en) 2015-05-21 2020-08-18 Kla-Tencor Corporation Photocathode including field emitter array on a silicon substrate with boron layer
JP6740230B2 (ja) * 2015-07-31 2020-08-12 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および電子機器
US10462391B2 (en) 2015-08-14 2019-10-29 Kla-Tencor Corporation Dark-field inspection using a low-noise sensor
US10778925B2 (en) 2016-04-06 2020-09-15 Kla-Tencor Corporation Multiple column per channel CCD sensor architecture for inspection and metrology
US10313622B2 (en) 2016-04-06 2019-06-04 Kla-Tencor Corporation Dual-column-parallel CCD sensor and inspection systems using a sensor
US9998700B1 (en) 2016-12-05 2018-06-12 Omnivision Technologies, Inc. Image sensor failure detection
US10943760B2 (en) 2018-10-12 2021-03-09 Kla Corporation Electron gun and electron microscope
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JP2021023680A (ja) * 2019-08-07 2021-02-22 ソニー・オリンパスメディカルソリューションズ株式会社 信号処理デバイス
CN110501691B (zh) * 2019-08-13 2022-03-08 Oppo广东移动通信有限公司 Tof模组的噪声滤除方法、tof模组及装置
JP7446182B2 (ja) * 2020-08-26 2024-03-08 東京エレクトロン株式会社 基板処理装置及びノイズ影響低減方法
CN112422955B (zh) * 2020-10-27 2022-08-12 西安微电子技术研究所 一种用于cmos图像传感器的adc固有噪声分析方法
US11330145B1 (en) 2021-06-10 2022-05-10 Bank Of America Corporation Image processing edge device for document noise removal
US20240014825A1 (en) * 2022-07-11 2024-01-11 Applied Materials, Inc. Algorithm for accurately converting a wide range of photo signals into an electrical current

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JP2000165764A (ja) * 1998-09-24 2000-06-16 Alps Electric Co Ltd ディジタルテレビジョン信号受信ユニット
US20030085402A1 (en) * 2001-11-06 2003-05-08 Tay Hiok Nam CMOS image sensor with noise cancellation

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US20030085402A1 (en) * 2001-11-06 2003-05-08 Tay Hiok Nam CMOS image sensor with noise cancellation

Also Published As

Publication number Publication date
JP2012512555A (ja) 2012-05-31
TW201611611A (zh) 2016-03-16
US20140063293A1 (en) 2014-03-06
GB2480927B (en) 2014-10-15
WO2010044081A3 (en) 2010-09-02
TW201103320A (en) 2011-01-16
CN102257616B (zh) 2013-11-20
US8582004B2 (en) 2013-11-12
ES2400278A2 (es) 2013-04-08
GB2480927A (en) 2011-12-07
JP5732707B2 (ja) 2015-06-10
HK1165157A1 (en) 2012-09-28
DE112009003725T5 (de) 2012-10-11
US20100149385A1 (en) 2010-06-17
GB201110216D0 (en) 2011-08-03
US20140333803A1 (en) 2014-11-13
WO2010044081A2 (en) 2010-04-22
SG172124A1 (en) 2011-07-28
US8451348B2 (en) 2013-05-28
TWI507034B (zh) 2015-11-01
MX2011006316A (es) 2011-09-01
US9055246B2 (en) 2015-06-09
ES2400278B1 (es) 2014-06-24
CN102257616A (zh) 2011-11-23
BRPI0923519A2 (pt) 2016-01-26
EP2377156A2 (en) 2011-10-19
TWI618412B (zh) 2018-03-11
JP2015111927A (ja) 2015-06-18
US8730358B2 (en) 2014-05-20
US20130222653A1 (en) 2013-08-29

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