ES2374528T3 - Procedimiento de fabricación de células solares en tándem que comprenden capas de silicio microcristalino. - Google Patents
Procedimiento de fabricación de células solares en tándem que comprenden capas de silicio microcristalino. Download PDFInfo
- Publication number
- ES2374528T3 ES2374528T3 ES04816261T ES04816261T ES2374528T3 ES 2374528 T3 ES2374528 T3 ES 2374528T3 ES 04816261 T ES04816261 T ES 04816261T ES 04816261 T ES04816261 T ES 04816261T ES 2374528 T3 ES2374528 T3 ES 2374528T3
- Authority
- ES
- Spain
- Prior art keywords
- layer
- sccm
- adjusted
- gas
- solar cells
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 66
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 title claims description 5
- 239000010703 silicon Substances 0.000 title claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title description 3
- 239000013081 microcrystal Substances 0.000 title 1
- 230000008569 process Effects 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 14
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000009826 distribution Methods 0.000 claims abstract description 9
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 25
- 238000000151 deposition Methods 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 12
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 5
- 230000005284 excitation Effects 0.000 claims description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims 2
- CMIAIUZBKPLIOP-YZLZLFLDSA-N methyl (1r,4ar,4br,10ar)-7-(2-hydroperoxypropan-2-yl)-4a-methyl-2,3,4,4b,5,6,10,10a-octahydro-1h-phenanthrene-1-carboxylate Chemical compound C1=C(C(C)(C)OO)CC[C@@H]2[C@]3(C)CCC[C@@H](C(=O)OC)[C@H]3CC=C21 CMIAIUZBKPLIOP-YZLZLFLDSA-N 0.000 claims 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 abstract description 7
- 210000004027 cell Anatomy 0.000 description 26
- 239000007789 gas Substances 0.000 description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 229910000077 silane Inorganic materials 0.000 description 5
- 230000008901 benefit Effects 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 210000002381 plasma Anatomy 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 241001256807 Pasma Species 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
- H01L31/1824—Special manufacturing methods for microcrystalline Si, uc-Si
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/545—Microcrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/935—Gas flow control
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Photovoltaic Devices (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102004003761 | 2004-01-23 | ||
| DE102004003761A DE102004003761A1 (de) | 2004-01-23 | 2004-01-23 | Herstellungsverfahren für Siliziumsolarzellen umfassend µc-Siliziumschichten |
| PCT/DE2004/002752 WO2005071761A1 (de) | 2004-01-23 | 2004-12-16 | HERSTELLUNGSVERFAHREN FÜR SILIZIUMSOLARZELLEN UMFASSEND µC-SILIZIUMSCHICHTEN |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES2374528T3 true ES2374528T3 (es) | 2012-02-17 |
Family
ID=34800998
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES04816261T Active ES2374528T3 (es) | 2004-01-23 | 2004-12-16 | Procedimiento de fabricación de células solares en tándem que comprenden capas de silicio microcristalino. |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US7927907B2 (ja) |
| EP (1) | EP1706908B1 (ja) |
| JP (1) | JP2007519245A (ja) |
| KR (1) | KR101108931B1 (ja) |
| AT (1) | ATE527695T1 (ja) |
| AU (1) | AU2004314625B9 (ja) |
| DE (1) | DE102004003761A1 (ja) |
| ES (1) | ES2374528T3 (ja) |
| PT (1) | PT1706908E (ja) |
| WO (1) | WO2005071761A1 (ja) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090208668A1 (en) * | 2008-02-19 | 2009-08-20 | Soo Young Choi | Formation of clean interfacial thin film solar cells |
| DE102010013039A1 (de) * | 2010-03-26 | 2011-09-29 | Sunfilm Ag | Verfahren zur Herstellung einer Fotovoltaikzelle sowie Verfahren zur Herstellung einer Mehrzahl von Fotovoltaikzellen |
| EP2740817A1 (en) * | 2012-12-05 | 2014-06-11 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Microcrystalline silicon thin film PECVD using hydrogen and silanes mixtures |
| JP6952467B2 (ja) | 2017-01-24 | 2021-10-20 | 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． | 全固体二次電池用正極活物質、全固体二次電池用正極活物質層、および全固体二次電池 |
| KR20200047960A (ko) | 2018-10-29 | 2020-05-08 | 현대자동차주식회사 | 코팅층이 형성된 양극 활물질 및 이의 제조방법 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6249672A (ja) * | 1985-08-29 | 1987-03-04 | Sumitomo Electric Ind Ltd | アモルフアス光起電力素子 |
| US5525550A (en) * | 1991-05-21 | 1996-06-11 | Fujitsu Limited | Process for forming thin films by plasma CVD for use in the production of semiconductor devices |
| JPH05243596A (ja) * | 1992-03-02 | 1993-09-21 | Showa Shell Sekiyu Kk | 積層型太陽電池の製造方法 |
| US5358755A (en) * | 1993-08-13 | 1994-10-25 | Amoco Corporation | Amorphous hydrogenated silicon-carbon alloys and solar cells and other semiconductor devices produced therefrom |
| DE19581590T1 (de) * | 1994-03-25 | 1997-04-17 | Amoco Enron Solar | Erhöhung eines Stabilitätsverhaltens von Vorrichtungen auf der Grundlage von amorphem Silizium, die durch Plasmaablagerung unter hochgradiger Wasserstoffverdünnung bei niedrigerer Temperatur hergestellt werden |
| TW371796B (en) * | 1995-09-08 | 1999-10-11 | Semiconductor Energy Lab Co Ltd | Method and apparatus for manufacturing a semiconductor device |
| EP0851513B1 (en) * | 1996-12-27 | 2007-11-21 | Canon Kabushiki Kaisha | Method of producing semiconductor member and method of producing solar cell |
| US6337224B1 (en) | 1997-11-10 | 2002-01-08 | Kaneka Corporation | Method of producing silicon thin-film photoelectric transducer and plasma CVD apparatus used for the method |
| US6287888B1 (en) * | 1997-12-26 | 2001-09-11 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and process for producing photoelectric conversion device |
| JPH11330520A (ja) * | 1998-03-09 | 1999-11-30 | Kanegafuchi Chem Ind Co Ltd | シリコン系薄膜光電変換装置の製造方法とその方法に用いられるプラズマｃｖｄ装置 |
| JP4358343B2 (ja) * | 1999-02-26 | 2009-11-04 | 株式会社カネカ | シリコン系薄膜光電変換装置の製造方法 |
| EP1032052B1 (en) * | 1999-02-26 | 2010-07-21 | Kaneka Corporation | Method of manufacturing silicon based thin film photoelectric conversion device |
| JP3589581B2 (ja) * | 1999-02-26 | 2004-11-17 | 株式会社カネカ | タンデム型の薄膜光電変換装置の製造方法 |
| US20020090815A1 (en) * | 2000-10-31 | 2002-07-11 | Atsushi Koike | Method for forming a deposited film by plasma chemical vapor deposition |
| JP2002246313A (ja) * | 2001-02-13 | 2002-08-30 | Kanegafuchi Chem Ind Co Ltd | 結晶質シリコン系薄膜をプラズマｃｖｄで形成する方法 |
| JP3872357B2 (ja) * | 2001-09-26 | 2007-01-24 | 京セラ株式会社 | 熱触媒体内蔵カソード型ｐｅｃｖｄ装置、熱触媒体内蔵カソード型ｐｅｃｖｄ法およびそれを用いるｃｖｄ装置 |
| US20030124842A1 (en) * | 2001-12-27 | 2003-07-03 | Applied Materials, Inc. | Dual-gas delivery system for chemical vapor deposition processes |
| US7344909B2 (en) * | 2002-10-25 | 2008-03-18 | Oc Oerlikon Balzers Ag | Method for producing semi-conducting devices and devices obtained with this method |
-
2004
- 2004-01-23 DE DE102004003761A patent/DE102004003761A1/de not_active Withdrawn
- 2004-12-16 PT PT04816261T patent/PT1706908E/pt unknown
- 2004-12-16 JP JP2006549849A patent/JP2007519245A/ja not_active Withdrawn
- 2004-12-16 AT AT04816261T patent/ATE527695T1/de active
- 2004-12-16 EP EP04816261A patent/EP1706908B1/de not_active Not-in-force
- 2004-12-16 KR KR1020067014905A patent/KR101108931B1/ko not_active IP Right Cessation
- 2004-12-16 AU AU2004314625A patent/AU2004314625B9/en not_active Ceased
- 2004-12-16 ES ES04816261T patent/ES2374528T3/es active Active
- 2004-12-16 US US10/587,131 patent/US7927907B2/en not_active Expired - Fee Related
- 2004-12-16 WO PCT/DE2004/002752 patent/WO2005071761A1/de active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| PT1706908E (pt) | 2012-01-09 |
| EP1706908B1 (de) | 2011-10-05 |
| EP1706908A1 (de) | 2006-10-04 |
| KR20070004590A (ko) | 2007-01-09 |
| US7927907B2 (en) | 2011-04-19 |
| AU2004314625A1 (en) | 2005-08-04 |
| JP2007519245A (ja) | 2007-07-12 |
| DE102004003761A1 (de) | 2005-08-25 |
| US20080274582A1 (en) | 2008-11-06 |
| KR101108931B1 (ko) | 2012-01-31 |
| AU2004314625B2 (en) | 2011-04-14 |
| AU2004314625B9 (en) | 2011-06-09 |
| WO2005071761A1 (de) | 2005-08-04 |
| ATE527695T1 (de) | 2011-10-15 |
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