ES2353106T3 - Dispositivo y procedimiento para la atemperación simultánea de varios productos en proceso. - Google Patents

Dispositivo y procedimiento para la atemperación simultánea de varios productos en proceso. Download PDF

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Publication number
ES2353106T3
ES2353106T3 ES00987008T ES00987008T ES2353106T3 ES 2353106 T3 ES2353106 T3 ES 2353106T3 ES 00987008 T ES00987008 T ES 00987008T ES 00987008 T ES00987008 T ES 00987008T ES 2353106 T3 ES2353106 T3 ES 2353106T3
Authority
ES
Spain
Prior art keywords
tempering
energy
product
layer
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES00987008T
Other languages
English (en)
Spanish (es)
Inventor
Volker Probst
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Saint Gobain Glass France SAS
Compagnie de Saint Gobain SA
Original Assignee
Saint Gobain Glass France SAS
Compagnie de Saint Gobain SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saint Gobain Glass France SAS, Compagnie de Saint Gobain SA filed Critical Saint Gobain Glass France SAS
Application granted granted Critical
Publication of ES2353106T3 publication Critical patent/ES2353106T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • C—CHEMISTRY; METALLURGY
    • C21—METALLURGY OF IRON
    • C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
    • C21D9/00—Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articles; Furnaces therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • C—CHEMISTRY; METALLURGY
    • C21—METALLURGY OF IRON
    • C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
    • C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
    • C21D1/34—Methods of heating
    • C—CHEMISTRY; METALLURGY
    • C21—METALLURGY OF IRON
    • C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
    • C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
    • C21D1/74—Methods of treatment in inert gas, controlled atmosphere, vacuum or pulverulent material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Heat Treatment Of Articles (AREA)
  • Muffle Furnaces And Rotary Kilns (AREA)
  • Furnace Details (AREA)
ES00987008T 1999-10-20 2000-10-20 Dispositivo y procedimiento para la atemperación simultánea de varios productos en proceso. Expired - Lifetime ES2353106T3 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19950498 1999-10-20
DE19950498 1999-10-20

Publications (1)

Publication Number Publication Date
ES2353106T3 true ES2353106T3 (es) 2011-02-25

Family

ID=7926265

Family Applications (1)

Application Number Title Priority Date Filing Date
ES00987008T Expired - Lifetime ES2353106T3 (es) 1999-10-20 2000-10-20 Dispositivo y procedimiento para la atemperación simultánea de varios productos en proceso.

Country Status (9)

Country Link
US (1) US6787485B1 (https=)
EP (1) EP1277238B1 (https=)
JP (1) JP4524438B2 (https=)
CN (1) CN1309096C (https=)
AT (1) ATE481741T1 (https=)
AU (1) AU780287B2 (https=)
DE (1) DE50015996D1 (https=)
ES (1) ES2353106T3 (https=)
WO (1) WO2001029902A2 (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7442413B2 (en) * 2005-11-18 2008-10-28 Daystar Technologies, Inc. Methods and apparatus for treating a work piece with a vaporous element
DE102005062977B3 (de) 2005-12-28 2007-09-13 Sulfurcell Solartechnik Gmbh Verfahren und Vorrichtung zur Umsetzung metallischer Vorläuferschichten zu Chalkopyritschichten von CIGSS-solarzellen
EP2180534B1 (en) * 2008-10-27 2013-10-16 Corning Incorporated Energy conversion devices and methods
US20110203655A1 (en) * 2010-02-22 2011-08-25 First Solar, Inc. Photovoltaic device protection layer
CA2705650A1 (en) * 2010-05-27 2011-11-27 Pyromaitre Inc. Heat treatment furnace
KR101590684B1 (ko) * 2010-08-27 2016-02-01 쌩-고벵 글래스 프랑스 복수의 다층체를 열처리하기 위한 장치 및 방법
US20120264072A1 (en) * 2011-02-03 2012-10-18 Stion Corporation Method and apparatus for performing reactive thermal treatment of thin film pv material
ITRE20110055A1 (it) * 2011-07-25 2013-01-26 Keraglass Engineering S R L Forno per la ricottura di lastre di vetro
US10100402B2 (en) 2011-10-07 2018-10-16 International Business Machines Corporation Substrate holder for graphene film synthesis
US20130344646A1 (en) * 2011-12-21 2013-12-26 Intermolecular, Inc. Absorbers for High-Efficiency Thin-Film PV
MX382061B (es) 2014-06-06 2025-03-11 Nippon Steel & Sumikin Texeng Co Ltd Horno de calentamiento por radiacion de infrarrojo lejano para lamina de acero para estampado en caliente.
CN104810300A (zh) * 2015-03-31 2015-07-29 山西南烨立碁光电有限公司 新型Wafer Bonding设备
JP2017216397A (ja) * 2016-06-01 2017-12-07 株式会社アルバック アニール処理装置およびアニール処理方法
JP6673778B2 (ja) * 2016-08-02 2020-03-25 光洋サーモシステム株式会社 金属部品の製造方法、および、熱処理装置
EP3690962A1 (de) * 2019-01-31 2020-08-05 (CNBM) Bengbu Design & Research Institute for Glass Industry Co., Ltd. Anordnung, vorrichtung und verfahren zum wärmebehandeln eines mehrschichtkörpers
KR102766394B1 (ko) * 2019-12-24 2025-02-11 삼성디스플레이 주식회사 유리 제품의 가공 장치, 유리 제품의 제조 방법, 유리 제품, 및 유리 제품을 포함하는 디스플레이 장치
KR102686945B1 (ko) * 2021-12-08 2024-07-22 한화모멘텀 주식회사 복층식 열처리로
US12080569B1 (en) 2022-06-23 2024-09-03 Cnbm Research Institute For Advanced Glass Materials Group Co., Ltd. Energy-saving heat treatment device for metal substrate in corrosive gas
DE102023117945A1 (de) * 2023-07-07 2025-01-09 Singulus Technologies Aktiengesellschaft Schleusenkammer

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6022835B2 (ja) 1978-08-17 1985-06-04 株式会社村田製作所 圧電性磁器の製造方法
US5090898A (en) 1979-11-16 1992-02-25 Smith Thomas M Infra-red heating
US4368111A (en) * 1980-12-17 1983-01-11 Phillips Petroleum Company Oil recovery from tar sands
JPS57183041A (en) * 1981-05-06 1982-11-11 Nec Corp Annealing method for chemical semiconductor
JPS61129834A (ja) 1984-11-28 1986-06-17 Dainippon Screen Mfg Co Ltd 光照射型熱処理装置
US5011794A (en) * 1989-05-01 1991-04-30 At&T Bell Laboratories Procedure for rapid thermal annealing of implanted semiconductors
DE59309438D1 (de) 1992-09-22 1999-04-15 Siemens Ag Schnelles verfahren zur erzeugung eines chalkopyrit-halbleiters auf einem substrat
JPH0778830A (ja) * 1993-09-07 1995-03-20 Hitachi Ltd 半導体製造装置
JP2932918B2 (ja) 1993-12-22 1999-08-09 日本鋼管株式会社 α＋β型チタン合金押出材の製造方法
DE4413215C2 (de) * 1994-04-15 1996-03-14 Siemens Solar Gmbh Solarmodul mit Dünnschichtaufbau und Verfahren zu seiner Herstellung
JP2875768B2 (ja) 1994-11-30 1999-03-31 新日本無線株式会社 半導体基板の熱処理方法
US5861609A (en) 1995-10-02 1999-01-19 Kaltenbrunner; Guenter Method and apparatus for rapid thermal processing
US5851929A (en) * 1996-01-04 1998-12-22 Micron Technology, Inc. Controlling semiconductor structural warpage in rapid thermal processing by selective and dynamic control of a heating source
JP3028467B2 (ja) * 1996-03-13 2000-04-04 日本無線株式会社 電磁加熱型活性化アニール装置
AU715515B2 (en) * 1996-10-09 2000-02-03 Sphelar Power Corporation Semiconductor device
US5871688A (en) * 1997-08-06 1999-02-16 North American Manufacturing Company Multi-stack annealer
US6171982B1 (en) * 1997-12-26 2001-01-09 Canon Kabushiki Kaisha Method and apparatus for heat-treating an SOI substrate and method of preparing an SOI substrate by using the same
CN1224924A (zh) * 1997-12-26 1999-08-04 佳能株式会社 热处理soi衬底的方法和设备及利用其制备soi衬底的方法
US6127202A (en) * 1998-07-02 2000-10-03 International Solar Electronic Technology, Inc. Oxide-based method of making compound semiconductor films and making related electronic devices

Also Published As

Publication number Publication date
US6787485B1 (en) 2004-09-07
AU780287B2 (en) 2005-03-10
EP1277238B1 (de) 2010-09-15
CN1411613A (zh) 2003-04-16
JP2003524745A (ja) 2003-08-19
WO2001029902A2 (de) 2001-04-26
CN1309096C (zh) 2007-04-04
AU2345001A (en) 2001-04-30
EP1277238A2 (de) 2003-01-22
DE50015996D1 (de) 2010-10-28
ATE481741T1 (de) 2010-10-15
WO2001029902A3 (de) 2002-11-07
JP4524438B2 (ja) 2010-08-18

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