ES2334766B1 - Detector de imagenes. - Google Patents

Detector de imagenes. Download PDF

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Publication number
ES2334766B1
ES2334766B1 ES200990014A ES200990014A ES2334766B1 ES 2334766 B1 ES2334766 B1 ES 2334766B1 ES 200990014 A ES200990014 A ES 200990014A ES 200990014 A ES200990014 A ES 200990014A ES 2334766 B1 ES2334766 B1 ES 2334766B1
Authority
ES
Spain
Prior art keywords
regions
barrier
image detector
substrate
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
ES200990014A
Other languages
English (en)
Spanish (es)
Other versions
ES2334766A1 (es
Inventor
Hiok Nam Tay
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of ES2334766A1 publication Critical patent/ES2334766A1/es
Application granted granted Critical
Publication of ES2334766B1 publication Critical patent/ES2334766B1/es
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H01L27/14643—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
ES200990014A 2007-03-01 2008-02-28 Detector de imagenes. Expired - Fee Related ES2334766B1 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/713,301 2007-03-01
US11/713,301 US20080211050A1 (en) 2007-03-01 2007-03-01 Image sensor with inter-pixel isolation

Publications (2)

Publication Number Publication Date
ES2334766A1 ES2334766A1 (es) 2010-03-15
ES2334766B1 true ES2334766B1 (es) 2010-12-07

Family

ID=39732470

Family Applications (1)

Application Number Title Priority Date Filing Date
ES200990014A Expired - Fee Related ES2334766B1 (es) 2007-03-01 2008-02-28 Detector de imagenes.

Country Status (9)

Country Link
US (2) US20080211050A1 (enExample)
JP (1) JP5435640B2 (enExample)
CN (1) CN101675523B (enExample)
BR (1) BRPI0815520A2 (enExample)
DE (1) DE112008000500B4 (enExample)
ES (1) ES2334766B1 (enExample)
GB (1) GB2460010B (enExample)
MX (1) MX2009009322A (enExample)
WO (1) WO2008125986A2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5173496B2 (ja) * 2008-03-06 2013-04-03 キヤノン株式会社 撮像装置及び撮像システム
US7902618B2 (en) * 2008-11-17 2011-03-08 Omni Vision Technologies, Inc. Backside illuminated imaging sensor with improved angular response
WO2011030413A1 (ja) * 2009-09-09 2011-03-17 株式会社 東芝 固体撮像装置およびその製造方法
WO2023102865A1 (en) * 2021-12-10 2023-06-15 Huawei Technologies Co., Ltd. Broadband image apparatus and method of fabricating the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6072206A (en) * 1998-03-19 2000-06-06 Kabushiki Kaisha Toshiba Solid state image sensor
DE19933162A1 (de) * 1999-07-20 2001-02-01 Stuttgart Mikroelektronik Bildzelle, Bildsensor und Herstellungsverfahren hierfür

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3617917B2 (ja) * 1998-02-13 2005-02-09 株式会社東芝 Ｍｏｓイメージセンサ
US6169318B1 (en) * 1998-02-23 2001-01-02 Polaroid Corporation CMOS imager with improved sensitivity
JP3403062B2 (ja) * 1998-03-31 2003-05-06 株式会社東芝 固体撮像装置
US6507059B2 (en) * 2001-06-19 2003-01-14 United Microelectronics Corp. Structure of a CMOS image sensor
KR20030010148A (ko) * 2001-07-25 2003-02-05 주식회사 하이닉스반도체 이미지 센서
US6909162B2 (en) * 2001-11-02 2005-06-21 Omnivision Technologies, Inc. Surface passivation to reduce dark current in a CMOS image sensor
US6795117B2 (en) * 2001-11-06 2004-09-21 Candela Microsystems, Inc. CMOS image sensor with noise cancellation
JP4682504B2 (ja) * 2002-09-20 2011-05-11 ソニー株式会社 固体撮像装置及びその製造方法並びに電子機器
WO2004027875A1 (ja) * 2002-09-20 2004-04-01 Sony Corporation 固体撮像装置及びその製造方法
US7091536B2 (en) * 2002-11-14 2006-08-15 Micron Technology, Inc. Isolation process and structure for CMOS imagers
JP2004207455A (ja) * 2002-12-25 2004-07-22 Trecenti Technologies Inc フォトダイオードおよびイメージセンサ
US7087944B2 (en) * 2003-01-16 2006-08-08 Micron Technology, Inc. Image sensor having a charge storage region provided within an implant region
JP5230058B2 (ja) * 2004-06-07 2013-07-10 キヤノン株式会社 固体撮像装置およびカメラ
KR100659503B1 (ko) * 2004-07-27 2006-12-20 삼성전자주식회사 광감도를 개선한 이미지 센서
JP4742602B2 (ja) * 2005-02-01 2011-08-10 ソニー株式会社 固体撮像装置及びその製造方法
KR100642760B1 (ko) * 2005-03-28 2006-11-10 삼성전자주식회사 이미지 센서 및 그 제조 방법
US20060255372A1 (en) * 2005-05-16 2006-11-16 Micron Technology, Inc. Color pixels with anti-blooming isolation and method of formation
US7253461B2 (en) * 2005-05-27 2007-08-07 Dialog Imaging Systems Gmbh Snapshot CMOS image sensor with high shutter rejection ratio
US20070029580A1 (en) * 2005-08-08 2007-02-08 Tsuan-Lun Lung Image-processing unit
US7964928B2 (en) * 2005-11-22 2011-06-21 Stmicroelectronics S.A. Photodetector with an improved resolution
US7442974B2 (en) * 2006-01-31 2008-10-28 Hiok Nam Tay Image sensor with inter-pixel isolation

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6072206A (en) * 1998-03-19 2000-06-06 Kabushiki Kaisha Toshiba Solid state image sensor
DE19933162A1 (de) * 1999-07-20 2001-02-01 Stuttgart Mikroelektronik Bildzelle, Bildsensor und Herstellungsverfahren hierfür

Also Published As

Publication number Publication date
WO2008125986A2 (en) 2008-10-23
WO2008125986A4 (en) 2009-05-07
GB0917164D0 (en) 2009-11-11
GB2460010B (en) 2011-08-17
JP2010520614A (ja) 2010-06-10
JP5435640B2 (ja) 2014-03-05
WO2008125986A3 (en) 2008-12-24
CN101675523A (zh) 2010-03-17
US20110068430A1 (en) 2011-03-24
US20080211050A1 (en) 2008-09-04
DE112008000500B4 (de) 2013-08-14
GB2460010A (en) 2009-11-18
BRPI0815520A2 (pt) 2015-02-03
MX2009009322A (es) 2009-09-11
CN101675523B (zh) 2012-06-20
DE112008000500T5 (de) 2010-04-08
ES2334766A1 (es) 2010-03-15
GB2460010A8 (en) 2009-12-02

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