ES2187790T3 - Blancos de pulverizacion ionica de aluminio o de aleaciones de aluminio. - Google Patents
Blancos de pulverizacion ionica de aluminio o de aleaciones de aluminio.Info
- Publication number
- ES2187790T3 ES2187790T3 ES97929495T ES97929495T ES2187790T3 ES 2187790 T3 ES2187790 T3 ES 2187790T3 ES 97929495 T ES97929495 T ES 97929495T ES 97929495 T ES97929495 T ES 97929495T ES 2187790 T3 ES2187790 T3 ES 2187790T3
- Authority
- ES
- Spain
- Prior art keywords
- aluminum
- whites
- white
- ionic
- spraying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N35/00—Automatic analysis not limited to methods or materials provided for in any single one of groups G01N1/00 - G01N33/00; Handling materials therefor
- G01N2035/00465—Separating and mixing arrangements
- G01N2035/00534—Mixing by a special element, e.g. stirrer
- G01N2035/00554—Mixing by a special element, e.g. stirrer using ultrasound
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
A FIN DE PROPORCIONAR BLANCOS DE SPUTTERING DE ALUMINIO O ALEACION DE ALUMINIO DE ALTA PUREZA CON CONTROL DE LA GENERACION REPENTINA DE PARTICULAS, EN BASE AL DESCUBRIMIENTO DE QUE LAS INCLUSIONES, ESPECIALMENTE DE OXIDOS, EN BLANCOS DE SPUTTERING DE (ALEACION DE) ALUMINIO SON PRINCIPALMENTE RESPONSABLES DE LA GENERACION DE PARTICULAS, Y MAS AUN, INCLUSIONES COMPOSITES DE GRAFITO-ALUMINA CON UNA DISTRIBUCION RELATIVAMENTE GROSERA EN LOS BLANCOS OCASIONAN UN AUMENTO REPENTINO EN EL NUMERO DE PARTICULAS FORMADAS, EL CONTENIDO EN OXIGENO DE TAL BLANCO SE LIMITA A MENOS DE 5 PPM Y EL NUMERO INDICATIVO CORRESPONDIENTE A AGUJEROS DE FONDO PLANO DE 0,5 MM O MAS DE DIAMETRO EN DETECCION DE DEFECTOS POR ULTRASONIDOS REALIZADA EN LA SUPERFICIE DEL BLANCO ANTERIOR SE FIJA EN MENOR DE 0,014/CM 2 .
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19415296A JP3755552B2 (ja) | 1996-07-05 | 1996-07-05 | アルミニウムまたはアルミニウム合金スパッタリングターゲット |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2187790T3 true ES2187790T3 (es) | 2003-06-16 |
Family
ID=16319792
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES97929495T Expired - Lifetime ES2187790T3 (es) | 1996-07-05 | 1997-07-02 | Blancos de pulverizacion ionica de aluminio o de aleaciones de aluminio. |
Country Status (8)
Country | Link |
---|---|
EP (1) | EP0853136B1 (es) |
JP (1) | JP3755552B2 (es) |
KR (1) | KR100288323B1 (es) |
CN (1) | CN1138871C (es) |
DE (1) | DE69719007T2 (es) |
ES (1) | ES2187790T3 (es) |
TW (1) | TW425434B (es) |
WO (1) | WO1998001598A1 (es) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020184970A1 (en) | 2001-12-13 | 2002-12-12 | Wickersham Charles E. | Sptutter targets and methods of manufacturing same to reduce particulate emission during sputtering |
JP5368663B2 (ja) * | 2000-04-14 | 2013-12-18 | トーソー エスエムディー,インク. | スパッターリング時の粒子状放出物を少なくするためのスパッターターゲットとそれを製造する方法 |
US6439054B1 (en) * | 2000-05-31 | 2002-08-27 | Honeywell International Inc. | Methods of testing sputtering target materials |
WO2006117884A1 (ja) * | 2005-04-26 | 2006-11-09 | Mitsui Mining & Smelting Co., Ltd. | Al-Ni-B合金配線材料及びそれを用いた素子構造 |
KR100959579B1 (ko) | 2005-04-26 | 2010-05-27 | 미쓰이 긴조꾸 고교 가부시키가이샤 | Al-Ni-B 합금 배선 재료 및 그것을 사용한 소자 구조 |
JP5069051B2 (ja) * | 2007-07-13 | 2012-11-07 | Jx日鉱日石金属株式会社 | ニッケル合金スパッタリングターゲット |
KR101124831B1 (ko) * | 2008-03-31 | 2012-03-26 | 가부시키가이샤 고베 세이코쇼 | 표시 장치, 그 제조 방법 및 스퍼터링 타깃 |
CN101639462B (zh) * | 2009-06-16 | 2011-12-21 | 宁波江丰电子材料有限公司 | 靶材的检测方法 |
CN105154799A (zh) * | 2015-09-07 | 2015-12-16 | 基迈克材料科技(苏州)有限公司 | 用于tft平板显示器的超高纯铝板细晶靶材的制备方法 |
CN107841643A (zh) * | 2017-12-11 | 2018-03-27 | 基迈克材料科技(苏州)有限公司 | 铝钪合金靶坯及其制备方法及应用 |
CN107841639A (zh) * | 2017-12-11 | 2018-03-27 | 基迈克材料科技(苏州)有限公司 | 铝钪合金靶坯及其制备方法及应用 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0499269A (ja) * | 1990-08-08 | 1992-03-31 | Mitsubishi Kasei Corp | スパッタリングターゲット |
JP2757705B2 (ja) * | 1992-09-11 | 1998-05-25 | 日本電気株式会社 | 半導体装置の製造方法 |
JPH06280005A (ja) * | 1993-03-23 | 1994-10-04 | Mitsubishi Kasei Corp | スパッタリングターゲット及びその製造方法 |
JPH0813141A (ja) * | 1994-06-28 | 1996-01-16 | Riyouka Massey Kk | スパッタリングターゲット及びその製造方法 |
-
1996
- 1996-07-05 JP JP19415296A patent/JP3755552B2/ja not_active Expired - Fee Related
-
1997
- 1997-07-02 WO PCT/JP1997/002287 patent/WO1998001598A1/ja active IP Right Grant
- 1997-07-02 EP EP97929495A patent/EP0853136B1/en not_active Expired - Lifetime
- 1997-07-02 CN CNB971908168A patent/CN1138871C/zh not_active Expired - Lifetime
- 1997-07-02 KR KR1019980701642A patent/KR100288323B1/ko not_active IP Right Cessation
- 1997-07-02 DE DE69719007T patent/DE69719007T2/de not_active Expired - Lifetime
- 1997-07-02 ES ES97929495T patent/ES2187790T3/es not_active Expired - Lifetime
- 1997-08-07 TW TW086111557A patent/TW425434B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPH1018028A (ja) | 1998-01-20 |
TW425434B (en) | 2001-03-11 |
DE69719007D1 (de) | 2003-03-20 |
EP0853136A4 (en) | 1999-04-21 |
WO1998001598A1 (fr) | 1998-01-15 |
EP0853136B1 (en) | 2003-02-12 |
JP3755552B2 (ja) | 2006-03-15 |
KR19990044398A (ko) | 1999-06-25 |
CN1196759A (zh) | 1998-10-21 |
CN1138871C (zh) | 2004-02-18 |
EP0853136A1 (en) | 1998-07-15 |
KR100288323B1 (ko) | 2001-05-02 |
DE69719007T2 (de) | 2003-09-25 |
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