ES2127210T3 - Memoria con celula de memoria eeprom de efecto capacitivo y procedimiento de lectura de una celda de memoria de este tipo. - Google Patents

Memoria con celula de memoria eeprom de efecto capacitivo y procedimiento de lectura de una celda de memoria de este tipo.

Info

Publication number
ES2127210T3
ES2127210T3 ES92401408T ES92401408T ES2127210T3 ES 2127210 T3 ES2127210 T3 ES 2127210T3 ES 92401408 T ES92401408 T ES 92401408T ES 92401408 T ES92401408 T ES 92401408T ES 2127210 T3 ES2127210 T3 ES 2127210T3
Authority
ES
Spain
Prior art keywords
memory cell
memory
eeprom
type
capacitive effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES92401408T
Other languages
English (en)
Inventor
Jacek Kowalski
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Gemplus SA
Original Assignee
Gemplus Card International SA
Gemplus SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gemplus Card International SA, Gemplus SA filed Critical Gemplus Card International SA
Application granted granted Critical
Publication of ES2127210T3 publication Critical patent/ES2127210T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors with potential-jump barrier or surface barrier
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Abstract

EN UNA CELULA DE MEMORIA DE UNA MEMORIA EEPROM O FLASH-EEPROM, SE CONECTAN JUNTOS LA FUENTE Y EL DRENAJE DE UN TRANSISTOR DE REJILLA FLOTANTE FORMANDO EL DISPOSITIVO DE MEMORIZACION NO VOLATIL. SE MUESTRA QUE ENTONCES EL COMPORTAMIENTO CAPACITIVO DE LA CELULA SE DIFERENCIA EN EL MOMENTO DE LA LECTURA SEGUN ESTE EN UN ESTADO PROGRAMADO O BORRADO. ESTA DIFERENCIA DE COMPORTAMIENTO SIRVE PARA DIFERENCIAR LOS ESTADOS LOGICOS.
ES92401408T 1991-05-29 1992-05-22 Memoria con celula de memoria eeprom de efecto capacitivo y procedimiento de lectura de una celda de memoria de este tipo. Expired - Lifetime ES2127210T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR919106466A FR2690008B1 (fr) 1991-05-29 1991-05-29 Memoire avec cellule memoire eeprom a effet capacitif et procede de lecture d'une telle cellule memoire.

Publications (1)

Publication Number Publication Date
ES2127210T3 true ES2127210T3 (es) 1999-04-16

Family

ID=9413241

Family Applications (1)

Application Number Title Priority Date Filing Date
ES92401408T Expired - Lifetime ES2127210T3 (es) 1991-05-29 1992-05-22 Memoria con celula de memoria eeprom de efecto capacitivo y procedimiento de lectura de una celda de memoria de este tipo.

Country Status (6)

Country Link
US (2) US5552621A (es)
EP (1) EP0516516B1 (es)
JP (1) JPH05206478A (es)
DE (1) DE69227542T2 (es)
ES (1) ES2127210T3 (es)
FR (1) FR2690008B1 (es)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100350819B1 (ko) * 1994-10-28 2003-01-15 코닌클리케 필립스 일렉트로닉스 엔.브이. 전계효과장치
FR2739737B1 (fr) * 1995-10-09 1997-11-21 Inside Technologies Perfectionnements aux cartes a memoire
FR2739706B1 (fr) * 1995-10-09 1997-11-21 Inside Technologies Perfectionnements aux cartes a memoire
US5925904A (en) * 1996-04-03 1999-07-20 Altera Corporation Two-terminal electrically-reprogrammable programmable logic element
US5777361A (en) * 1996-06-03 1998-07-07 Motorola, Inc. Single gate nonvolatile memory cell and method for accessing the same
IT1289540B1 (it) * 1996-07-10 1998-10-15 Sgs Thomson Microelectronics Metodo per trasformare automaticamente la fabbricazione di una cella di memoria eprom nella fabbricazione di una cella di memoria
US5838616A (en) * 1996-09-30 1998-11-17 Symbios, Inc. Gate edge aligned EEPROM transistor
US6667506B1 (en) * 1999-04-06 2003-12-23 Peregrine Semiconductor Corporation Variable capacitor with programmability
US6690056B1 (en) 1999-04-06 2004-02-10 Peregrine Semiconductor Corporation EEPROM cell on SOI
US6169302B1 (en) * 1999-07-27 2001-01-02 Advanced Micro Devices, Inc. Determination of parasitic capacitance between the gate and drain/source local interconnect of a field effect transistor
ITMI20041802A1 (it) * 2004-09-21 2004-12-21 Atmel Corp "nuovo metodo compensato per attuare una fase di scarica ad alta tensione dopo un impulso di cancellazione in un dispositivo di memoria flash"
WO2006033832A2 (en) * 2004-09-21 2006-03-30 Atmel Corporation New compensated method to implement a high voltage discharge phase after erase pulse in a flash memory device
US7923767B2 (en) * 2007-12-26 2011-04-12 Sandisk Corporation Non-volatile storage with substrate cut-out and process of fabricating
US11659709B2 (en) * 2020-08-21 2023-05-23 Globalfoundries Singapore Pte. Ltd. Single well one transistor and one capacitor nonvolatile memory device and integration schemes

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4037243A (en) * 1974-07-01 1977-07-19 Motorola, Inc. Semi conductor memory cell utilizing sensing of variations in PN junction current conrolled by stored data
US4242736A (en) * 1976-10-29 1980-12-30 Massachusetts Institute Of Technology Capacitor memory and methods for reading, writing, and fabricating capacitor memories
US4363109A (en) * 1980-11-28 1982-12-07 General Motors Corporation Capacitance coupled eeprom
US4663645A (en) * 1984-05-23 1987-05-05 Hitachi, Ltd. Semiconductor device of an LDD structure having a floating gate
JPS6180851A (ja) * 1984-09-28 1986-04-24 Toshiba Corp 不揮発性半導体記憶装置
JPS635558A (ja) * 1986-06-25 1988-01-11 Seiko Instr & Electronics Ltd 不揮発性ｒａｍ
FR2609831B1 (fr) * 1987-01-16 1989-03-31 Thomson Semiconducteurs Circuit de lecture pour memoire
FR2610134B1 (fr) * 1987-01-27 1989-03-31 Thomson Semiconducteurs Circuit de lecture pour memoire
US5243210A (en) * 1987-02-21 1993-09-07 Kabushiki Kaisha Toshiba Semiconductor memory device and manufacturing method thereof
FR2613491B1 (fr) * 1987-04-03 1989-07-21 Thomson Csf Dispositif de detection du niveau haut d'une tension en technologie mos
FR2617979B1 (fr) * 1987-07-10 1989-11-10 Thomson Semiconducteurs Dispositif de detection de la depassivation d'un circuit integre
FR2617976B1 (fr) * 1987-07-10 1989-11-10 Thomson Semiconducteurs Detecteur electrique de niveau logique binaire
FR2618579B1 (fr) * 1987-07-21 1989-11-10 Thomson Semiconducteurs Circuit integre a memoire comportant un dispositif anti-fraude
FR2622019B1 (fr) * 1987-10-19 1990-02-09 Thomson Semiconducteurs Dispositif de test structurel d'un circuit integre
FR2622038B1 (fr) * 1987-10-19 1990-01-19 Thomson Semiconducteurs Procede de programmation des cellules memoire d'une memoire et circuit pour la mise en oeuvre de ce procede
FR2623018B1 (fr) * 1987-11-06 1990-02-09 Thomson Semiconducteurs Circuit integre protege contre les decharges electrostatiques avec seuil de protection variable
FR2623016B1 (fr) * 1987-11-06 1991-06-14 Thomson Semiconducteurs Dispositif de fusion d'un fusible dans un circuit integre de type cmos
US5017980A (en) * 1988-07-15 1991-05-21 Texas Instruments Incorporated Electrically-erasable, electrically-programmable read-only memory cell
US4989053A (en) * 1989-03-27 1991-01-29 Shelton Everett K Nonvolatile process compatible with a digital and analog double level metal MOS process
US5017979A (en) * 1989-04-28 1991-05-21 Nippondenso Co., Ltd. EEPROM semiconductor memory device
FR2649817B1 (fr) * 1989-07-13 1993-12-24 Gemplus Card International Carte a microcircuit protegee contre l'intrusion
FR2667714A1 (fr) * 1990-10-09 1992-04-10 Gemplus Card Int Procede pour repartir la memoire d'un circuit integre entre plusieurs applications.
US5291439A (en) * 1991-09-12 1994-03-01 International Business Machines Corporation Semiconductor memory cell and memory array with inversion layer

Also Published As

Publication number Publication date
DE69227542D1 (de) 1998-12-17
DE69227542T2 (de) 2000-10-05
US5552621A (en) 1996-09-03
EP0516516A1 (fr) 1992-12-02
FR2690008B1 (fr) 1994-06-10
JPH05206478A (ja) 1993-08-13
EP0516516B1 (fr) 1998-11-11
FR2690008A1 (fr) 1993-10-15
US5721440A (en) 1998-02-24

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