ES2055588T3 - Captador capacitivo integrable de presion y su procedimiento de produccion. - Google Patents

Captador capacitivo integrable de presion y su procedimiento de produccion.

Info

Publication number
ES2055588T3
ES2055588T3 ES91903344T ES91903344T ES2055588T3 ES 2055588 T3 ES2055588 T3 ES 2055588T3 ES 91903344 T ES91903344 T ES 91903344T ES 91903344 T ES91903344 T ES 91903344T ES 2055588 T3 ES2055588 T3 ES 2055588T3
Authority
ES
Spain
Prior art keywords
semiconductor
film
pressure sensor
integrable
capacitive pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES91903344T
Other languages
English (en)
Inventor
Gunther Zimmer
Jorg Eichholz
Wilfried Mokwa
Michael Kandler
Yiannakis Manoli
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Original Assignee
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV filed Critical Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Application granted granted Critical
Publication of ES2055588T3 publication Critical patent/ES2055588T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0072Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
    • G01L9/0073Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/12Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in capacitance, i.e. electric circuits therefor
    • G01L9/125Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in capacitance, i.e. electric circuits therefor with temperature compensating means
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/43Electric condenser making
    • Y10T29/435Solid dielectric type

Abstract

SE PROPONE UN PROCESO PARA LA FABRICACION DE UN SENSOR DE PRESION CAPACITIVA INTEGRABLE QUE INCLUYE LAS SIGUIENTES ETAPAS, EMPEZANDO A PARTIR DE UN SUBSTRATO SEMICONDUCTOR: APLICACION DE UNA PELICULA (2) SOPORTE, PRECIPITACION DE UNA PELICULA (4) DE SEMICONDUCTOR POLICRISTALINO, DOPADO DE LA PELICULA (4) DE SEMICONDUCTOR POLICRISTALINO, Y ELIMINADO DE LA PELICULA (2) DE SOPORTE. PARA DISEÑAR EL SENSOR DE PRESION QUE PUEDA SER COMPATIBLE CON CIRCUITOS CMOS, Y PARA INCREMENTAR LA EXACTITUD DEL SENSOR, LA INVENCION PROPONE QUE SEA AISLADA UNA ZONA (7) SEMICONDUCTORA DEL SUBSTRATO (1) SEMICONDUCTOR Y SE APLIQUE UNA PELICULA (8) AISLADORA EN LA ZONA (7) DEL SEMICONDUCTOR AISLADO, ESTANDO LOCALIZADA LA PELICULA (4) SEMICONDUCTORA POLICRISTALINA EN LA PELICULA (2) AISLADORA POR ENCIMA DE LA ZONA (7) DEL SEMICONDUCTOR AISLADO.
ES91903344T 1990-02-12 1991-02-09 Captador capacitivo integrable de presion y su procedimiento de produccion. Expired - Lifetime ES2055588T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4004179A DE4004179A1 (de) 1990-02-12 1990-02-12 Integrierbarer, kapazitiver drucksensor und verfahren zum herstellen desselben

Publications (1)

Publication Number Publication Date
ES2055588T3 true ES2055588T3 (es) 1994-08-16

Family

ID=6399921

Family Applications (1)

Application Number Title Priority Date Filing Date
ES91903344T Expired - Lifetime ES2055588T3 (es) 1990-02-12 1991-02-09 Captador capacitivo integrable de presion y su procedimiento de produccion.

Country Status (6)

Country Link
US (1) US5321989A (es)
EP (1) EP0515416B1 (es)
JP (1) JPH0726886B2 (es)
DE (4) DE4004179A1 (es)
ES (1) ES2055588T3 (es)
WO (1) WO1991012507A1 (es)

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DE4222930A1 (de) * 1992-07-11 1994-01-13 Vdo Schindling Schaltungsanordnung zur Messung von Kapazitäten
FR2700003B1 (fr) * 1992-12-28 1995-02-10 Commissariat Energie Atomique Procédé de fabrication d'un capteur de pression utilisant la technologie silicium sur isolant et capteur obtenu.
EP0681691B1 (de) * 1993-01-19 1996-07-31 Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.V. Drucksensor
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EP0618435A3 (de) * 1993-03-30 1995-02-01 Siemens Ag Kapazitiver Drucksensor.
US5369544A (en) * 1993-04-05 1994-11-29 Ford Motor Company Silicon-on-insulator capacitive surface micromachined absolute pressure sensor
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US6141243A (en) * 1996-11-12 2000-10-31 Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. Sensor element
KR100319057B1 (ko) * 1996-11-12 2001-12-29 슈베르트 헬무트 센서 소자
EP0943078A1 (de) * 1996-12-04 1999-09-22 Siemens Aktiengesellschaft Mikromechanisches bauelement zur erfassung von fingerabdrücken
DE19753874A1 (de) * 1997-12-05 1999-06-17 Bosch Gmbh Robert Kraftsensor
US6244121B1 (en) 1998-03-06 2001-06-12 Applied Materials, Inc. Sensor device for non-intrusive diagnosis of a semiconductor processing system
DE19831600C1 (de) * 1998-07-14 1999-08-19 Siemens Ag Anordnung mit einer Vielzahl von Sensorgruppen und Verfahren zur Bestimmung ihrer Intaktheit
DE19839606C1 (de) 1998-08-31 2000-04-27 Siemens Ag Mikromechanisches Bauelement und Verfahren zu dessen Herstellung
JP3567089B2 (ja) * 1998-10-12 2004-09-15 株式会社日立製作所 静電容量式圧力センサ
JP3445536B2 (ja) * 1999-10-04 2003-09-08 三洋電機株式会社 半導体装置
EP1259976A2 (en) 2000-02-23 2002-11-27 National Center for Scientific Research Demokritos Institute of Microelectronics Capacitive pressure-responsive devices and their fabrication
US6472243B2 (en) 2000-12-11 2002-10-29 Motorola, Inc. Method of forming an integrated CMOS capacitive pressure sensor
JP4773630B2 (ja) 2001-05-15 2011-09-14 株式会社デンソー ダイアフラム型半導体装置とその製造方法
JP4342122B2 (ja) 2001-06-01 2009-10-14 株式会社豊田中央研究所 静電容量型物理量センサと検出装置
DE10130372B4 (de) * 2001-06-23 2006-09-14 Abb Patent Gmbh Differenzdrucksensor
DE10130373B4 (de) * 2001-06-23 2006-09-21 Abb Patent Gmbh Kapazitiver Differenzdrucksensor
JP4296731B2 (ja) 2001-07-18 2009-07-15 株式会社デンソー 静電容量型圧力センサの製造方法
US20050224899A1 (en) * 2002-02-06 2005-10-13 Ramsey Craig C Wireless substrate-like sensor
US7289230B2 (en) * 2002-02-06 2007-10-30 Cyberoptics Semiconductors, Inc. Wireless substrate-like sensor
US20050224902A1 (en) * 2002-02-06 2005-10-13 Ramsey Craig C Wireless substrate-like sensor
US20050233770A1 (en) * 2002-02-06 2005-10-20 Ramsey Craig C Wireless substrate-like sensor
DE10324960B4 (de) * 2003-06-03 2011-08-11 Robert Bosch GmbH, 70469 Kapazitiver Drucksensor
JP2006170893A (ja) * 2004-12-17 2006-06-29 Alps Electric Co Ltd 静電容量型圧力センサ
US7585280B2 (en) 2004-12-29 2009-09-08 Codman & Shurtleff, Inc. System and method for measuring the pressure of a fluid system within a patient
US20060211945A1 (en) * 2005-03-15 2006-09-21 Codman & Shurtleff, Inc. Pressure sensing methods
US7510533B2 (en) * 2005-03-15 2009-03-31 Codman & Shurtleff, Inc. Pressure sensing valve
US10362947B2 (en) * 2005-03-15 2019-07-30 Integra LifeSciences Switzerland Sarl Pressure sensing devices
US20070106200A1 (en) * 2005-11-08 2007-05-10 Brian Levy Intraocular shunt device and method
US7682313B2 (en) * 2005-11-23 2010-03-23 Vital Sensors Holding Company, Inc. Implantable pressure monitor
US7686768B2 (en) * 2005-11-23 2010-03-30 Vital Sensors Holding Company, Inc. Implantable pressure monitor
US7893697B2 (en) * 2006-02-21 2011-02-22 Cyberoptics Semiconductor, Inc. Capacitive distance sensing in semiconductor processing tools
JP2009527764A (ja) * 2006-02-21 2009-07-30 サイバーオプティクス セミコンダクタ インコーポレイテッド 半導体加工ツールにおける静電容量距離検出
FR2897937B1 (fr) * 2006-02-24 2008-05-23 Commissariat Energie Atomique Capteur de pression a jauges resistives
JP4325638B2 (ja) * 2006-04-26 2009-09-02 オムロンヘルスケア株式会社 脈波測定装置
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US7778793B2 (en) * 2007-03-12 2010-08-17 Cyberoptics Semiconductor, Inc. Wireless sensor for semiconductor processing systems
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DE102015225184A1 (de) 2015-12-15 2017-06-22 Robert Bosch Gmbh Herstellungsverfahren für eine mikromechanische Sensorvorrichtung und entsprechende mikromechanische Sensorvorrichtung
JP6696552B2 (ja) * 2017-11-13 2020-05-20 株式会社村田製作所 配線容量キャンセル方法および配線容量キャンセル装置

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JPH0750789B2 (ja) * 1986-07-18 1995-05-31 日産自動車株式会社 半導体圧力変換装置の製造方法

Also Published As

Publication number Publication date
EP0515416A1 (de) 1992-12-02
DE4042335A1 (de) 1991-08-14
JPH0726886B2 (ja) 1995-03-29
DE59101391D1 (de) 1994-05-19
US5321989A (en) 1994-06-21
EP0515416B1 (de) 1994-04-13
DE4042336A1 (de) 1991-08-14
WO1991012507A1 (de) 1991-08-22
DE4004179A1 (de) 1991-08-14
JPH05501159A (ja) 1993-03-04

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