ES2018129T3 - Aparato reactor de plasma y metodo de tratamiento de un substrato. - Google Patents

Aparato reactor de plasma y metodo de tratamiento de un substrato.

Info

Publication number
ES2018129T3
ES2018129T3 ES90104938T ES90104938T ES2018129T3 ES 2018129 T3 ES2018129 T3 ES 2018129T3 ES 90104938 T ES90104938 T ES 90104938T ES 90104938 T ES90104938 T ES 90104938T ES 2018129 T3 ES2018129 T3 ES 2018129T3
Authority
ES
Spain
Prior art keywords
substrate
treatment
plasma reactor
plasma
reactor apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES90104938T
Other languages
English (en)
Other versions
ES2018129A4 (es
Inventor
Jes Asmussen
Donnie K Reinhard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Michigan State University MSU
Original Assignee
Michigan State University MSU
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Michigan State University MSU filed Critical Michigan State University MSU
Publication of ES2018129A4 publication Critical patent/ES2018129A4/es
Application granted granted Critical
Publication of ES2018129T3 publication Critical patent/ES2018129T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)

Abstract

SE DESCRIBE UN MECANISMO Y METODO PARA TRATAR UN SUBSTRATO CON UNA ESPECIE EXCITADA SEPARADA DE UN PLASMA (15, 15A, 31, 52, 53). EL MECANISMO INCLUYE TUBOS EN LOS EXTREMOS CERRADOS O ABIERTOS (13, 22, 30, 54 Y 55) CON APARATOS U ORIFICIOS (16, 32, 56 Y 57) PARA DIRIGIR LA ESPECIE EXCITADA A UN SUBSTRATO (17, 33, 59) Y UNA PLACA GRADUABLE O CORTACIRCUITO DESLIZANTE (11, 38, 39, 40) EN LA PARTE INTERIOR O EXTERIOR DE LOS TUBOS PARA SITUAR EL PLASMA EN EL TUBO DURANTE EL MANEJO DEL MECANISMO. SE UTILIZA LA POSICION DE REGULACION O BOQUILLAS O LAS VARIACIONES DE POTENCIA. EL METODO Y MECANISMO SON UTILES PARA DEPOSITAR PELICULAS, GRABADOS Y SIMILARES.
ES90104938T 1989-03-23 1990-03-15 Aparato reactor de plasma y metodo de tratamiento de un substrato. Expired - Lifetime ES2018129T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/328,017 US4943345A (en) 1989-03-23 1989-03-23 Plasma reactor apparatus and method for treating a substrate

Publications (2)

Publication Number Publication Date
ES2018129A4 ES2018129A4 (es) 1991-04-01
ES2018129T3 true ES2018129T3 (es) 1997-05-01

Family

ID=23279149

Family Applications (1)

Application Number Title Priority Date Filing Date
ES90104938T Expired - Lifetime ES2018129T3 (es) 1989-03-23 1990-03-15 Aparato reactor de plasma y metodo de tratamiento de un substrato.

Country Status (9)

Country Link
US (1) US4943345A (es)
EP (1) EP0388800B1 (es)
JP (1) JP2553947B2 (es)
AT (1) ATE146899T1 (es)
CA (1) CA2008926C (es)
DE (2) DE388800T1 (es)
DK (1) DK0388800T3 (es)
ES (1) ES2018129T3 (es)
GR (1) GR900300199T1 (es)

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Also Published As

Publication number Publication date
DE69029480D1 (de) 1997-02-06
US4943345A (en) 1990-07-24
DE69029480T2 (de) 1997-04-10
ATE146899T1 (de) 1997-01-15
DE388800T1 (de) 1991-02-07
DK0388800T3 (da) 1997-06-09
JPH02282482A (ja) 1990-11-20
JP2553947B2 (ja) 1996-11-13
CA2008926C (en) 1994-03-29
EP0388800A2 (en) 1990-09-26
GR900300199T1 (en) 1991-10-10
EP0388800B1 (en) 1996-12-27
CA2008926A1 (en) 1990-09-23
ES2018129A4 (es) 1991-04-01
EP0388800A3 (en) 1991-07-03

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