ES2003352A6 - Substrato conductor y transparente para elemento fotoelectrico - Google Patents

Substrato conductor y transparente para elemento fotoelectrico

Info

Publication number
ES2003352A6
ES2003352A6 ES8602025A ES8602025A ES2003352A6 ES 2003352 A6 ES2003352 A6 ES 2003352A6 ES 8602025 A ES8602025 A ES 8602025A ES 8602025 A ES8602025 A ES 8602025A ES 2003352 A6 ES2003352 A6 ES 2003352A6
Authority
ES
Spain
Prior art keywords
conducting
transparent substrate
photoelectric element
microns
halogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
ES8602025A
Other languages
English (en)
Inventor
Masahiro Hirata
Masao Misonou
Hideo Kawahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Saint Gobain Vitrage SA
Original Assignee
Saint Gobain Vitrage SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saint Gobain Vitrage SA filed Critical Saint Gobain Vitrage SA
Publication of ES2003352A6 publication Critical patent/ES2003352A6/es
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23—Oxides
    • C03C17/245—Oxides by deposition from the vapour phase
    • C03C17/2453—Coating containing SnO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Geochemistry & Mineralogy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Non-Insulated Conductors (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Surface Treatment Of Glass (AREA)
  • Liquid Crystal (AREA)

Abstract

LA INVECION SE REFIERE A UN SUSTRATO TRANSPARENTE Y CONDUCTOR UTILIZABLE COMO ELEMENTO FOTOELECTRICO. SE PROPONE UTILIZAR COMO SUSTRATO UN SOPORTE TAL COMO EL VIDRIO REVESTIDO DE UN ESPESOR POR LO MENOS IGUAL A 0.7 MICROMETRO, DE OXIDO DE ESTAÑO OBTENIDO POR DESCOMPOSICION TERMICA Y OXIDACION DE UN COMPUESTO DE ESTAÑO CONTENIENDO CLORO, PERO SIN NINGUN OTRO HALOGENO.
ES8602025A 1985-09-20 1986-09-19 Substrato conductor y transparente para elemento fotoelectrico Expired - Fee Related ES2003352A6 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60208363A JPS6269405A (ja) 1985-09-20 1985-09-20 光電素子用透明導電基板

Publications (1)

Publication Number Publication Date
ES2003352A6 true ES2003352A6 (es) 1991-03-16

Family

ID=16555049

Family Applications (1)

Application Number Title Priority Date Filing Date
ES8602025A Expired - Fee Related ES2003352A6 (es) 1985-09-20 1986-09-19 Substrato conductor y transparente para elemento fotoelectrico

Country Status (5)

Country Link
EP (1) EP0216703B1 (es)
JP (1) JPS6269405A (es)
AT (1) ATE71925T1 (es)
DE (1) DE3683575D1 (es)
ES (1) ES2003352A6 (es)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07112076B2 (ja) * 1987-05-07 1995-11-29 日本板硝子株式会社 二層構造を有する透明導電膜体
JP2853125B2 (ja) * 1988-03-17 1999-02-03 日本板硝子株式会社 透明導電膜の製造方法
DE19715048C2 (de) * 1997-04-11 1999-08-19 Bosch Gmbh Robert Verfahren zum Strukturieren einer transparenten, elektrisch leitfähigen Schicht
US6602606B1 (en) * 1999-05-18 2003-08-05 Nippon Sheet Glass Co., Ltd. Glass sheet with conductive film, method of manufacturing the same, and photoelectric conversion device using the same
CN104310790A (zh) * 2014-09-28 2015-01-28 中国建材国际工程集团有限公司 大面积透明导电膜玻璃的制备方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5534668A (en) * 1978-09-04 1980-03-11 Toshiba Corp Forming method for transparent conductive composite film
JPS59162269A (ja) * 1983-03-07 1984-09-13 Nippon Sheet Glass Co Ltd 基体に酸化錫膜を形成する方法
JPS59136477A (ja) * 1982-12-23 1984-08-06 Nippon Sheet Glass Co Ltd 基体に酸化錫膜を形成する方法

Also Published As

Publication number Publication date
EP0216703B1 (fr) 1992-01-22
DE3683575D1 (de) 1992-03-05
EP0216703A2 (fr) 1987-04-01
EP0216703A3 (en) 1989-04-26
ATE71925T1 (de) 1992-02-15
JPS6269405A (ja) 1987-03-30
JPH0572686B2 (es) 1993-10-12

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Legal Events

Date Code Title Description
FD1A Patent lapsed

Effective date: 19990920