EP4553855A3 - Energiefilterelement für ionenimplantationsanlagen für den einsatz in der produktion von wafern - Google Patents

Energiefilterelement für ionenimplantationsanlagen für den einsatz in der produktion von wafern

Info

Publication number
EP4553855A3
EP4553855A3 EP25167441.2A EP25167441A EP4553855A3 EP 4553855 A3 EP4553855 A3 EP 4553855A3 EP 25167441 A EP25167441 A EP 25167441A EP 4553855 A3 EP4553855 A3 EP 4553855A3
Authority
EP
European Patent Office
Prior art keywords
filter element
ion implantation
systems used
energy filter
wafer production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP25167441.2A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP4553855A2 (de
Inventor
Florian Krippendorf
Constantin Csato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MI2 Factory GmbH
Original Assignee
MI2 Factory GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by MI2 Factory GmbH filed Critical MI2 Factory GmbH
Publication of EP4553855A2 publication Critical patent/EP4553855A2/de
Publication of EP4553855A3 publication Critical patent/EP4553855A3/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H01J37/3172—Maskless patterned ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/02—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diaphragms, collimators
    • G21K1/025—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diaphragms, collimators using multiple collimators, e.g. Bucky screens; other devices for eliminating undesired or dispersed radiation
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/10—Scattering devices; Absorbing devices; Ionising radiation filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/047—Changing particle velocity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/047—Changing particle velocity
    • H01J2237/0475—Changing particle velocity decelerating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31706—Ion implantation characterised by the area treated
    • H01J2237/3171—Ion implantation characterised by the area treated patterned
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31706—Ion implantation characterised by the area treated
    • H01J2237/3171—Ion implantation characterised by the area treated patterned
    • H01J2237/31711—Ion implantation characterised by the area treated patterned using mask

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Physical Vapour Deposition (AREA)
  • Element Separation (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
EP25167441.2A 2016-04-04 2017-04-04 Energiefilterelement für ionenimplantationsanlagen für den einsatz in der produktion von wafern Withdrawn EP4553855A3 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102016106119.0A DE102016106119B4 (de) 2016-04-04 2016-04-04 Energiefilterelement für Ionenimplantationsanlagen für den Einsatz in der Produktion von Wafern
EP17717106.3A EP3440690B1 (de) 2016-04-04 2017-04-04 Energiefilterelement für ionenimplantationsanlagen für den einsatz in der produktion von wafern
PCT/EP2017/058018 WO2017174597A1 (de) 2016-04-04 2017-04-04 Energiefilterelement für ionenimplantationsanlagen für den einsatz in der produktion von wafern
EP21183792.7A EP3926658B1 (de) 2016-04-04 2017-04-04 Energiefilterelement für ionenimplantationsanlagen für den einsatz in der produktion von wafern

Related Parent Applications (3)

Application Number Title Priority Date Filing Date
EP17717106.3A Division EP3440690B1 (de) 2016-04-04 2017-04-04 Energiefilterelement für ionenimplantationsanlagen für den einsatz in der produktion von wafern
EP21183792.7A Division EP3926658B1 (de) 2016-04-04 2017-04-04 Energiefilterelement für ionenimplantationsanlagen für den einsatz in der produktion von wafern
EP21183792.7A Division-Into EP3926658B1 (de) 2016-04-04 2017-04-04 Energiefilterelement für ionenimplantationsanlagen für den einsatz in der produktion von wafern

Publications (2)

Publication Number Publication Date
EP4553855A2 EP4553855A2 (de) 2025-05-14
EP4553855A3 true EP4553855A3 (de) 2025-08-27

Family

ID=58544919

Family Applications (4)

Application Number Title Priority Date Filing Date
EP25167441.2A Withdrawn EP4553855A3 (de) 2016-04-04 2017-04-04 Energiefilterelement für ionenimplantationsanlagen für den einsatz in der produktion von wafern
EP25163764.1A Pending EP4546375A3 (de) 2016-04-04 2017-04-04 Energiefilterelement für ionenimplantationsanlagen für den einsatz in der produktion von wafern
EP17717106.3A Active EP3440690B1 (de) 2016-04-04 2017-04-04 Energiefilterelement für ionenimplantationsanlagen für den einsatz in der produktion von wafern
EP21183792.7A Active EP3926658B1 (de) 2016-04-04 2017-04-04 Energiefilterelement für ionenimplantationsanlagen für den einsatz in der produktion von wafern

Family Applications After (3)

Application Number Title Priority Date Filing Date
EP25163764.1A Pending EP4546375A3 (de) 2016-04-04 2017-04-04 Energiefilterelement für ionenimplantationsanlagen für den einsatz in der produktion von wafern
EP17717106.3A Active EP3440690B1 (de) 2016-04-04 2017-04-04 Energiefilterelement für ionenimplantationsanlagen für den einsatz in der produktion von wafern
EP21183792.7A Active EP3926658B1 (de) 2016-04-04 2017-04-04 Energiefilterelement für ionenimplantationsanlagen für den einsatz in der produktion von wafern

Country Status (6)

Country Link
US (5) US10847338B2 (enExample)
EP (4) EP4553855A3 (enExample)
JP (6) JP6831133B2 (enExample)
CN (2) CN113035676B (enExample)
DE (1) DE102016106119B4 (enExample)
WO (1) WO2017174597A1 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016106119B4 (de) * 2016-04-04 2019-03-07 mi2-factory GmbH Energiefilterelement für Ionenimplantationsanlagen für den Einsatz in der Produktion von Wafern
DE102016122791B3 (de) * 2016-11-25 2018-05-30 mi2-factory GmbH Ionenimplantationsanlage, Filterkammer und Implantationsverfahren unter Einsatz eines Energiefilterelements
EP3605555A4 (en) * 2017-03-22 2020-12-16 Japan Atomic Energy Agency FUNCTIONAL MEMBRANE FOR ION BEAM TRANSMISSION, BEAM LINE DEVICE USING A FUNCTIONAL MEMBRANE FOR ION BEAM TRANSMISSION, FILTER DEVICE USING A FUNCTIONAL MEMBRANE FOR ION BEAM TRANSMISSION, AND METHOD OF ADJUSTING A DEVICE FILTER
US10217654B1 (en) * 2018-02-12 2019-02-26 Varian Semiconductor Equipment Associates, Inc. Embedded features for interlocks using additive manufacturing
DE102018114667B3 (de) 2018-06-19 2019-09-19 Infineon Technologies Ag Ionenstrahl-moderatorvorrichtung, ionenstrahl-implantationsgerät und ionen-implantationsverfahren
DE102019112773B4 (de) * 2019-05-15 2023-11-30 mi2-factory GmbH Vorrichtung und Verfahren zur Implantation von Teilchen in ein Substrat
DE102019120623B4 (de) 2019-07-31 2024-01-25 mi2-factory GmbH Energiefilter zur Verwendung bei der Implantation von Ionen in ein Substrat
LU101807B1 (en) 2020-05-15 2021-11-15 Mi2 Factory Gmbh Ion implantation device with energy filter having additional thermal energy dissipation surface area
LU101808B1 (en) 2020-05-15 2021-11-15 Mi2 Factory Gmbh An ion implantation device comprising energy filter and additional heating element
CN111634899B (zh) * 2020-06-14 2022-11-18 南开大学 一种基于金属-有机框架衍生合成碳包覆磷酸钛钾纳米花的制备方法
US20240038491A1 (en) * 2020-12-17 2024-02-01 mi2-factory GmbH Ion implantation device with an energy filter and a support element for overlapping at least part of the energy filter
EP4238121A1 (en) * 2020-12-17 2023-09-06 MI2-Factory GmbH Energy filter assembly for ion implantation system with at least one coupling element
DE102020134222A1 (de) * 2020-12-18 2022-06-23 mi2-factory GmbH Verfahren zur Herstellung eines vorbehandelten Verbundsubstrats und vorbehandeltes Verbundsubstrat
WO2022180037A1 (en) 2021-02-24 2022-09-01 mi2-factory GmbH A computer-implemented method for the simulation of an energy-filtered ion implantation (efii) using an ion tunnel
WO2022180124A1 (en) 2021-02-24 2022-09-01 mi2-factory GmbH A computer-implemented method for the simulation of an energy-filtered ion implantation (efii)
US11569063B2 (en) 2021-04-02 2023-01-31 Applied Materials, Inc. Apparatus, system and method for energy spread ion beam
CN114758730B (zh) * 2022-01-05 2024-08-16 西安理工大学 等离子体活性粒子与绝缘材料表面作用的仿真方法
US12571088B2 (en) 2022-01-21 2026-03-10 Axcelis Technologies, Inc. High incidence angle graphite for particle control with dedicated low sputter yield ion beam
DE102023103315B4 (de) 2023-02-10 2024-11-28 Ernst-Abbe-Hochschule Jena, Körperschaft des öffentlichen Rechts Messvorrichtung, Ionenimplantationsvorrichtung und Verfahren zur ladungsunabhängigen In-Situ-Dosismessung
EP4783223A1 (de) * 2025-01-27 2026-07-29 mi2-factory GmbH Verfahren zur ionenimplantation in ein substrat

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EP1329192B1 (de) * 2002-01-18 2005-04-13 Siemens Aktiengesellschaft Röntgeneinrichtung

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GB2089499A (en) * 1980-12-15 1982-06-23 Ramsey Eng Co X-ray Radiation Analyser
EP1329192B1 (de) * 2002-01-18 2005-04-13 Siemens Aktiengesellschaft Röntgeneinrichtung

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Also Published As

Publication number Publication date
EP3440690B1 (de) 2021-08-11
JP7809377B2 (ja) 2026-02-02
JP2019522326A (ja) 2019-08-08
EP3926658C0 (de) 2025-06-04
EP3440690A1 (de) 2019-02-13
JP7572751B2 (ja) 2024-10-24
US11837430B2 (en) 2023-12-05
JP2023181414A (ja) 2023-12-21
EP3926658A3 (de) 2022-05-11
US20240055217A1 (en) 2024-02-15
JP6831133B2 (ja) 2021-02-17
CN113035676B (zh) 2025-02-11
US20220020556A1 (en) 2022-01-20
US20210027975A1 (en) 2021-01-28
EP4546375A2 (de) 2025-04-30
US10847338B2 (en) 2020-11-24
EP3926658A2 (de) 2021-12-22
DE102016106119B4 (de) 2019-03-07
WO2017174597A1 (de) 2017-10-12
EP4546375A3 (de) 2025-08-13
JP7384480B2 (ja) 2023-11-21
CN109155228A (zh) 2019-01-04
EP3926658B1 (de) 2025-06-04
US20250014854A1 (en) 2025-01-09
US11183358B2 (en) 2021-11-23
JP2025000985A (ja) 2025-01-07
JP2022174091A (ja) 2022-11-22
JP2026065111A (ja) 2026-04-14
US20190122850A1 (en) 2019-04-25
JP2021073647A (ja) 2021-05-13
CN113035676A (zh) 2021-06-25
DE102016106119A1 (de) 2017-10-05
CN109155228B (zh) 2021-10-01
JP7134508B2 (ja) 2022-09-12
EP4553855A2 (de) 2025-05-14
US12080510B2 (en) 2024-09-03

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