EP4306262A1 - Procédé de polissage double face des tranches de semi-conducteur entre un disque de polissage inférieur et un disque de polissage supérieur - Google Patents

Procédé de polissage double face des tranches de semi-conducteur entre un disque de polissage inférieur et un disque de polissage supérieur Download PDF

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Publication number
EP4306262A1
EP4306262A1 EP22184834.4A EP22184834A EP4306262A1 EP 4306262 A1 EP4306262 A1 EP 4306262A1 EP 22184834 A EP22184834 A EP 22184834A EP 4306262 A1 EP4306262 A1 EP 4306262A1
Authority
EP
European Patent Office
Prior art keywords
polishing
cloth
plate
polishing plate
spacers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP22184834.4A
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German (de)
English (en)
Inventor
Vladimir Dutschke
Andreas Gustke
Albrecht Ihle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siltronic AG
Original Assignee
Siltronic AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic AG filed Critical Siltronic AG
Priority to EP22184834.4A priority Critical patent/EP4306262A1/fr
Publication of EP4306262A1 publication Critical patent/EP4306262A1/fr
Pending legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D9/00—Wheels or drums supporting in exchangeable arrangement a layer of flexible abrasive material, e.g. sandpaper
    • B24D9/08—Circular back-plates for carrying flexible material
    • B24D9/085—Devices for mounting sheets on a backing plate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/10—Single-purpose machines or devices
    • B24B7/16—Single-purpose machines or devices for grinding end-faces, e.g. of gauges, rollers, nuts, piston rings
    • B24B7/17—Single-purpose machines or devices for grinding end-faces, e.g. of gauges, rollers, nuts, piston rings for simultaneously grinding opposite and parallel end faces, e.g. double disc grinders

Definitions

  • the subject of the invention is a method for polishing semiconductor wafers on both sides between a lower polishing plate and an upper polishing plate.
  • Polishing workpieces such as semiconductor wafers on both sides is also called double-side polishing (DSP).
  • DSP double-side polishing
  • Basics of the DSP of semiconductor wafers are, for example, in US 2003 0 054 650 A1 and in DE 100 07 390 A1 described.
  • both polishing plates of a DSP system are covered with polishing cloths. These should be glued on without bubbles. It is important that the respective polishing cloth adheres evenly to the polishing plate. In order to achieve the necessary adhesion, the polishing cloths can be pressed together between the polishing plates (cloth pressing). Pressing causes the glue to flow and adhere better.
  • Methods for creating an adhesive connection between the respective polishing cloth and the corresponding polishing plate are out US 2007 0 087 671 A1 , JP 2006 289 523 A , JP 2006 346 808 A and DE 102 39 774 A1 known.
  • EP 4 000 806 A1 describes a method that uses an intermediate ring to temporarily glue the upper polishing cloth to the upper polishing plate in the area of the surface of the intermediate ring in a more adhesive manner than in adjacent areas.
  • the inventors of the invention described below have found that there is still a need for improvement because the use of an intermediate ring has not proven to be sufficiently reliable in allowing bubbles to form between the upper polishing pad and the upper polishing cloth can be easily pressed, in particular, to the inner edge of the upper polishing cloth and removed there, without risking that the adhesion of the upper polishing cloth to the upper polishing plate is lost.
  • spacers instead of an intermediate ring results in an intermediate state being achieved for pressing the upper polishing cloth against the upper polishing plate, in which the upper polishing cloth adheres reliably to the upper polishing plate, but still loose enough to prevent bubbles mechanically from the space between the upper polishing cloth and the upper polishing plate. Because the intermediate pieces are not connected to one another, the path along which a bubble is pressed out of the intermediate space can be radial, leading to the inner edge or the outer edge of the polishing cloth if necessary also have tangential parts.
  • the spacers are used instead of an intermediate ring to achieve the intermediate state, the area of the upper polishing cloth that adheres comparatively firmly to the upper polishing cloth is lower and therefore the risk that bubbles will be trapped that cannot be removed or can only be removed with difficulty.
  • the space between the spacers is used to drive bubbles to the inner edge or outer edge of the upper polishing cloth and eliminate them there.
  • spacers instead of an intermediate ring also reduces the risk of the upper polishing cloth becoming detached from the upper polishing plate after reaching the intermediate state. This danger exists because, on the one hand, the pressure with which the upper polishing plate is pressed against the lower polishing plate must not be too high due to the potential formation of bubbles, but on the other hand it must be sufficient to hold the upper polishing cloth on the upper polishing plate.
  • the scope available for choosing the right print is machine-dependent and narrow. If spacers are used instead of an intermediate ring, this clearance is greater.
  • the spacers are placed on an intermediate cloth so that they lie concentrically to the inner edge of the lower polishing cloth and at approximately the same distance from one another on the intermediate cloth.
  • the distance between the spacers and the inner edge of the lower polishing plate is preferably 0 mm to 5 mm.
  • the spacers lie on an annular surface with a radial width of preferably 10 mm to 100 mm, particularly preferably 30 mm to 50 mm.
  • the degree of coverage of the annular surface by the spacers is preferably 1% to 15%, particularly preferably 3% to 10%.
  • the spacers are preferably not less than 100 ⁇ m and not more than 300 ⁇ m thick. They preferably have the shape of triangles, in particular isosceles or equilateral triangles. Other shapes are also possible, for example the shape of other polygons or circles or semicircles.
  • the spacers are preferably made of a plastic, for example polyethylene.
  • the polishing cloths are ring-shaped and each include a side surface with an adhesive layer.
  • the lower polishing cloth is glued to the lower polishing plate.
  • the lower polishing cloth is pressed against the lower polishing plate pressed manually or by a machine.
  • at least one tool is used to press the lower polishing cloth against the lower polishing plate.
  • the tool is preferably a squeegee or a roller.
  • the direction of the tool movement is preferably radial and, if necessary, also tangential, in order to press bubbles out of the space between the lower polishing plate and the adhesive layer by applying pressure, preferably on the outer edge and/or on the inner edge of the lower polishing cloth.
  • the lower polishing cloth is then covered with an intermediate cloth.
  • the intermediate cloth preferably has the in DE 10 2017 217 490 A1 properties described, in particular a compressibility at room temperature of at least 3%, preferably 3% to 10%.
  • a first and a second intermediate cloth can also be placed on the lower polishing cloth.
  • the spacers are then placed on the intermediate cloth so that they lie concentrically to the inner edge of the lower polishing cloth and at approximately the same distance from one another on the intermediate cloth.
  • the upper polishing cloth is placed over the intermediate cloth and over the spacers so that the side surface with the adhesive layer faces the upper polishing plate.
  • the upper polishing plate is then pressed against the lower polishing plate and this state is maintained for a certain period of time. Because of the presence of the spacers, the upper polishing cloth is pressed against the upper polishing plate with higher pressure in the area of the spacers than in the adjacent areas. After subsequently removing the spacers and the intermediate cloth, the intermediate state then achieved ensures sufficient adhesion of the upper polishing cloth to the upper polishing plate. At the same time, it also makes it possible in the next step to reliably press bubbles over the areas with less pronounced adhesion to the upper polishing plate to the outer edge and/or inner edge of the upper polishing cloth with comparatively little effort. This is preferably done manually using a tool, such as a squeegee or a roller. The direction of the tool movement is preferably radial and, if necessary, also tangential in order to press bubbles out of the space between the upper polishing plate and the adhesive layer by applying pressure on the outer edge and/or on the inner edge of the upper polishing cloth.
  • Cloth pressing is then carried out, during which the upper polishing plate and the upper polishing cloth are pressed against the lower polishing plate and the lower polishing cloth with comparatively high pressure over a longer period of time. If two intermediate cloths were placed on the lower polishing cloth, the lower one of the intermediate cloths remains between the polishing plates when the cloth is pressed and is only removed afterwards.
  • the polishing plates have a temperature of 40 ° C to 50 ° C at the beginning of cloth pressing in order to reduce the viscosity of the adhesive of the adhesive layer, according to another embodiment, room temperature (23 ° C ⁇ 2 ° C).
  • the method according to the invention is continued with the polishing of semiconductor wafers on both sides in the presence of a polishing agent.
  • the DSP is preferably carried out with process parameters that are already in DE 10 2017 217 490 A1 are recommended. Some of these are mentioned again below.
  • the use of polishing cloths that have low or very low compressibility is preferred.
  • the compressibility of the respective polishing cloth is preferably not more than 2.5%, particularly preferably not more than 2.0%, determined at room temperature (23 ° C ⁇ 2 ° C).
  • the compressibility is determined analogously to JIS-L-1096 (Testing Methods for Woven Fabrics).
  • the thickness of the polishing cloths is preferably not less than 0.7 and not more than 1.5 mm.
  • the semiconductor wafers are each placed in a recess in a rotor disk that is dimensioned according to their circumference.
  • the semiconductor wafers preferably consist of single-crystalline silicon and preferably have a diameter of not less than 200 mm, particularly preferably a diameter of at least 300 mm.
  • the polishing agent is expediently a suspension which preferably contains colloidally disperse silica and optionally other compounds, for example those which adjust the pH.
  • the material removal by DSP is preferably not more than 15 ⁇ m, particularly preferably 5 ⁇ m to 12 ⁇ m per polished side surface.
  • Fig. 1 shows the basic structure of a DSP machine: A lower, ring-shaped polishing plate 12 and an upper polishing plate 13 rotate on collinear axes 9 and 10 with rotational speeds n o and n u .
  • An inner pin ring 6 is arranged within the inner diameter of the polishing plates 13 and 12 and an outer pin ring 20 is arranged outside the outer diameter of the annular polishing plates 12 and 13, which are collinear with rotational speeds n i and n a to the polishing plates and thus around the common axis 11 of the DSP -Machine rotate.
  • the inner pin ring 6 and the outer pin ring 20 form a rolling device in which, for example, three or five rotor disks 15 with suitable external teeth are inserted.
  • the rotor disks 15 each have at least one or more disk holders 2 for semiconductor disks 14.
  • the lower polishing plate 12 and the upper polishing plate 13 carry a lower polishing cloth 19 and an upper polishing cloth 16, respectively, on their mutually facing surfaces.
  • the mutually facing surfaces of the lower and upper polishing cloths 19 and 16 form lower and upper work surfaces, respectively. During processing, these come into contact with the front and back of the semiconductor wafers 14.
  • the rotor disks 15 with the semiconductor disks 14 are guided simultaneously over the lower and upper work surfaces on cycloidal paths, with the rotor disks 15 rotating around the axis 11 on planetary paths.
  • the space formed between the working surfaces in which the rotor disks 15 move is referred to as the working gap 17.
  • the upper polishing plate 13 exerts a force on the lower polishing plate 12, and a polishing agent is supplied via channels 18 in the upper polishing plate 13.
  • the DSP machine can have sensors 3 and 4, which are arranged at different radial positions, for example in the upper polishing plate 13, and which measure the distance between the mutually facing surfaces of the polishing plates 12 and 13 during the polishing of semiconductor wafers 14.
  • Fig. 2 shows a top view of the lower polishing plate 12 at the time after spacers 1 have been placed on an intermediate cloth 7, so that they lie concentrically to the inner edge 5 of the lower polishing cloth 19 and at approximately the same distance from one another on the intermediate cloth 7.
  • Fig. 3 shows a sectional view of the vertical arrangement of features during the pressing of the upper polishing plate 13 against the lower polishing plate 12 and before the removal of the intermediate cloth 7 and the spacers 1.
  • the spacers 1 lie on the intermediate cloth 7 and between the lower and upper polishing cloths 19, 16, which are pressed against each other.
  • the upper polishing cloth 16 is glued to the upper polishing plate 13 using the adhesive layer 8. The pressure with which this happens is higher in the areas of the spacers 1 than in their surroundings.

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
EP22184834.4A 2022-07-13 2022-07-13 Procédé de polissage double face des tranches de semi-conducteur entre un disque de polissage inférieur et un disque de polissage supérieur Pending EP4306262A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP22184834.4A EP4306262A1 (fr) 2022-07-13 2022-07-13 Procédé de polissage double face des tranches de semi-conducteur entre un disque de polissage inférieur et un disque de polissage supérieur

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP22184834.4A EP4306262A1 (fr) 2022-07-13 2022-07-13 Procédé de polissage double face des tranches de semi-conducteur entre un disque de polissage inférieur et un disque de polissage supérieur

Publications (1)

Publication Number Publication Date
EP4306262A1 true EP4306262A1 (fr) 2024-01-17

Family

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Family Applications (1)

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EP22184834.4A Pending EP4306262A1 (fr) 2022-07-13 2022-07-13 Procédé de polissage double face des tranches de semi-conducteur entre un disque de polissage inférieur et un disque de polissage supérieur

Country Status (1)

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EP (1) EP4306262A1 (fr)

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10007390A1 (de) 1999-03-13 2000-10-12 Wolters Peter Werkzeugmasch Zweischeiben-Poliermaschine, insbesondere zur Bearbeitung von Halbleiterwafern
US20030054650A1 (en) 2001-07-05 2003-03-20 Wacker Siltronic Gesellschaft Fur Halbleitermaterialien Ag Process for material-removing machining of both sides of semiconductor wafers
DE10239774A1 (de) 2002-08-29 2003-11-27 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zum Aufkleben von Poliertüchern
JP2006289523A (ja) 2005-04-06 2006-10-26 Speedfam Co Ltd 研磨パッド貼着用加圧ローラを備えた両面研磨装置及び研磨パッドの貼着方法
JP2006346808A (ja) 2005-06-15 2006-12-28 Mimasu Semiconductor Industry Co Ltd 研磨パッド貼り付け方法及びワークの製造方法
US20070087671A1 (en) 2005-10-17 2007-04-19 Fujikoshi Machinery Corp. Method of adhering polishing pads and jig for adhering the same
DE102017217490A1 (de) 2017-09-29 2019-04-04 Siltronic Ag Verfahren zum beidseitigen Polieren einer Halbleiterscheibe
DE102019213657A1 (de) * 2019-09-09 2021-03-11 Siltronic Ag Verfahren und Vorrichtung zum Anpressen eines Poliertuchs
WO2021235050A1 (fr) * 2020-05-19 2021-11-25 信越半導体株式会社 Procédé de fixation de tampon de polissage de dispositif de polissage double face
EP4000806A1 (fr) 2020-11-16 2022-05-25 Siltronic AG Procédé de polissage de chaque côté de tranche de semi-conducteur entre une molette de polissage inférieure et une molette de polissage supérieure
EP4000802A1 (fr) * 2020-11-17 2022-05-25 Siltronic AG Procédé de polissage de chaque côté de tranche de semi-conducteur entre une molette de polissage inférieure et une molette de polissage supérieure

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10007390A1 (de) 1999-03-13 2000-10-12 Wolters Peter Werkzeugmasch Zweischeiben-Poliermaschine, insbesondere zur Bearbeitung von Halbleiterwafern
US20030054650A1 (en) 2001-07-05 2003-03-20 Wacker Siltronic Gesellschaft Fur Halbleitermaterialien Ag Process for material-removing machining of both sides of semiconductor wafers
DE10239774A1 (de) 2002-08-29 2003-11-27 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zum Aufkleben von Poliertüchern
JP2006289523A (ja) 2005-04-06 2006-10-26 Speedfam Co Ltd 研磨パッド貼着用加圧ローラを備えた両面研磨装置及び研磨パッドの貼着方法
JP2006346808A (ja) 2005-06-15 2006-12-28 Mimasu Semiconductor Industry Co Ltd 研磨パッド貼り付け方法及びワークの製造方法
US20070087671A1 (en) 2005-10-17 2007-04-19 Fujikoshi Machinery Corp. Method of adhering polishing pads and jig for adhering the same
DE102017217490A1 (de) 2017-09-29 2019-04-04 Siltronic Ag Verfahren zum beidseitigen Polieren einer Halbleiterscheibe
DE102019213657A1 (de) * 2019-09-09 2021-03-11 Siltronic Ag Verfahren und Vorrichtung zum Anpressen eines Poliertuchs
WO2021235050A1 (fr) * 2020-05-19 2021-11-25 信越半導体株式会社 Procédé de fixation de tampon de polissage de dispositif de polissage double face
EP4000806A1 (fr) 2020-11-16 2022-05-25 Siltronic AG Procédé de polissage de chaque côté de tranche de semi-conducteur entre une molette de polissage inférieure et une molette de polissage supérieure
EP4000802A1 (fr) * 2020-11-17 2022-05-25 Siltronic AG Procédé de polissage de chaque côté de tranche de semi-conducteur entre une molette de polissage inférieure et une molette de polissage supérieure

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