EP4234148A2 - Division de corps solide par conversion de substances - Google Patents

Division de corps solide par conversion de substances Download PDF

Info

Publication number
EP4234148A2
EP4234148A2 EP23169248.4A EP23169248A EP4234148A2 EP 4234148 A2 EP4234148 A2 EP 4234148A2 EP 23169248 A EP23169248 A EP 23169248A EP 4234148 A2 EP4234148 A2 EP 4234148A2
Authority
EP
European Patent Office
Prior art keywords
solid
modifications
laser
less
solid body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP23169248.4A
Other languages
German (de)
English (en)
Other versions
EP4234148A3 (fr
Inventor
Christian Beyer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siltectra GmbH
Original Assignee
Siltectra GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltectra GmbH filed Critical Siltectra GmbH
Publication of EP4234148A2 publication Critical patent/EP4234148A2/fr
Publication of EP4234148A3 publication Critical patent/EP4234148A3/fr
Pending legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting

Definitions

  • the above object is achieved by the invention a method for producing a detachment region in a solid for detaching a solid portion, in particular a solid layer, from the solid, detached, wherein the solid portion to be detached is thinner than the solid reduced by the solid portion.
  • This solution is advantageous because a material transformation or phase transformation can preferably be brought about without local destruction of the crystal lattice, as a result of which a weakening or reduction in strength can be produced in the solid body in a very controlled manner.
  • the modifications can be generated in blocks, which means that, for example, a block of 50 consecutive rows contains a modification and the subsequent 50 rows do not contain any modifications, with another block after this block of 50 rows without modification of 50 lines with modification.
  • modifications of a large number of rows are provided in alternating blocks.
  • the width of such alternating blocks can vary according to the distance from the edge of the sample, which means that, for example, in the area of the edge the blocks have a lower number of rows of modifications and towards the middle of the sample have a higher number of rows of modifications.
  • the distance between the lines in which modifications are generated changes as a function of a function.
  • the reference numeral 1 designates in 1 the solid.
  • modifications 9 are produced in the solid body 1 in order to form a detachment region 2 on or along which the solid body 1 is separated into at least two components.
  • the modifications 9 are material transformations or phase transformations of the solid material, through which the detachment region 2 is created.
  • the modifications 9 are generated by at least one laser beam 4 .
  • the laser beam 4 penetrates the preferably at least partially transparent solid 1 via a preferably treated, in particular polished, surface 5 .
  • the at least one laser beam is preferably refracted on the surface 5, which is indicated by the reference number 6.
  • the at least one laser beam then forms a focus 8 for generating the modification.
  • the polished surface 5 can also be referred to as the main surface 18 .
  • Figure 7c shows a further possible configuration of the detachment area 2 purely by way of example.
  • the cooling device 3 preferably has a guide-support structure, which is preferably formed by a tool carrier, in particular a chuck.
  • the guide-support structure preferably has a round basic shape. This is advantageous since an imbalance can be avoided more easily with regard to spinning processes.
  • the round basic shape is preferably provided with flat areas 95-98. These flat areas are advantageous because they allow or facilitate rough alignment and/or cassettes.
  • At least one light beam component 616, 618 or at least one light beam 606 is particularly preferably deflected and focused by a deflection element 610, 612, 613 designed as a parabolic mirror.
  • the modifications 9 here preferably have a vertical extent of less than 50 ⁇ m and preferably less than 30 ⁇ m and particularly preferably less than 20 ⁇ m.
  • the method according to the invention preferably comprises at least the following steps: providing a solid body to be processed, the solid body consisting of a chemical compound; providing a LASER light source; Subjecting the solid to LASER radiation from the LASER light source, with the laser beams penetrating the solid via a surface of the part of the solid to be separated, with the LASER radiation heating a predetermined part of the solid inside the solid to form a detachment area or several partial detachment areas in a defined manner, characterized in that the temperature generated in the predetermined portion of the solid by the laser beams is so high is that the material forming the predetermined proportion undergoes modifications in the form of a predetermined material transformation.

Landscapes

  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Laser Beam Processing (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Processing Of Solid Wastes (AREA)
  • Centrifugal Separators (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
EP23169248.4A 2015-01-15 2015-11-27 Division de corps solide par conversion de substances Pending EP4234148A3 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102015000449.2A DE102015000449A1 (de) 2015-01-15 2015-01-15 Festkörperteilung mittels Stoffumwandlung
PCT/EP2015/077979 WO2016113030A2 (fr) 2015-01-15 2015-11-27 Séparation d'un corps solide par transformation de matière
EP15804717.5A EP3253529B1 (fr) 2015-01-15 2015-11-27 Séparation d'un corps solide par modification du matériau

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
EP15804717.5A Division EP3253529B1 (fr) 2015-01-15 2015-11-27 Séparation d'un corps solide par modification du matériau

Publications (2)

Publication Number Publication Date
EP4234148A2 true EP4234148A2 (fr) 2023-08-30
EP4234148A3 EP4234148A3 (fr) 2023-10-18

Family

ID=54782683

Family Applications (2)

Application Number Title Priority Date Filing Date
EP15804717.5A Active EP3253529B1 (fr) 2015-01-15 2015-11-27 Séparation d'un corps solide par modification du matériau
EP23169248.4A Pending EP4234148A3 (fr) 2015-01-15 2015-11-27 Division de corps solide par conversion de substances

Family Applications Before (1)

Application Number Title Priority Date Filing Date
EP15804717.5A Active EP3253529B1 (fr) 2015-01-15 2015-11-27 Séparation d'un corps solide par modification du matériau

Country Status (5)

Country Link
US (3) US20180133834A1 (fr)
EP (2) EP3253529B1 (fr)
CN (2) CN107107262B (fr)
DE (1) DE102015000449A1 (fr)
WO (1) WO2016113030A2 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015000449A1 (de) * 2015-01-15 2016-07-21 Siltectra Gmbh Festkörperteilung mittels Stoffumwandlung
CN108838562B (zh) 2014-11-27 2021-08-17 西尔特克特拉有限责任公司 借助于材料转化的固体分开
JP6698468B2 (ja) * 2016-08-10 2020-05-27 株式会社ディスコ ウエーハ生成方法
US10940611B2 (en) 2018-07-26 2021-03-09 Halo Industries, Inc. Incident radiation induced subsurface damage for controlled crack propagation in material cleavage
US10576585B1 (en) * 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
US11024501B2 (en) 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
DE102019208024A1 (de) * 2019-06-03 2020-12-03 Robert Bosch Gmbh Verfahren zur Herstellung einer Rückseite eines Leistungstransistors und Leistungstransistor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013126927A2 (fr) 2012-02-26 2013-08-29 Solexel, Inc. Systèmes et procédés pour une division par laser et un transfert de couche de dispositif

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5824455A (en) * 1990-09-26 1998-10-20 Canon Kabushiki Kaisha Processing method and apparatus
JPH06124913A (ja) 1992-06-26 1994-05-06 Semiconductor Energy Lab Co Ltd レーザー処理方法
JPH0929472A (ja) * 1995-07-14 1997-02-04 Hitachi Ltd 割断方法、割断装置及びチップ材料
DE19849658A1 (de) * 1998-10-29 2000-05-04 Deutsch Zentr Luft & Raumfahrt Verfahren und Einrichtung zum Ablösen eines Ausschnittes einer Materialschicht
US7052978B2 (en) * 2003-08-28 2006-05-30 Intel Corporation Arrangements incorporating laser-induced cleaving
US20080070340A1 (en) * 2006-09-14 2008-03-20 Nicholas Francis Borrelli Image sensor using thin-film SOI
US8440129B2 (en) * 2007-11-02 2013-05-14 President And Fellows Of Harvard College Production of free-standing solid state layers by thermal processing of substrates with a polymer
CN101740331B (zh) 2008-11-07 2012-01-25 东莞市中镓半导体科技有限公司 利用固体激光器无损剥离GaN与蓝宝石衬底的方法
EP2620409B1 (fr) * 2008-12-23 2017-03-01 Siltectra GmbH Procédé de production de minces couches libres de matériaux à l'état solide avec des surfaces structurées
JP5619474B2 (ja) * 2009-05-26 2014-11-05 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法
JP5614738B2 (ja) * 2010-01-26 2014-10-29 国立大学法人埼玉大学 基板加工方法
DE102010030358B4 (de) * 2010-06-22 2014-05-22 Osram Opto Semiconductors Gmbh Verfahren zum Abtrennen einer Substratscheibe
RU2459691C2 (ru) * 2010-11-29 2012-08-27 Юрий Георгиевич Шретер Способ отделения поверхностного слоя полупроводникового кристалла (варианты)
JP5480169B2 (ja) 2011-01-13 2014-04-23 浜松ホトニクス株式会社 レーザ加工方法
JP5950269B2 (ja) 2011-02-10 2016-07-13 国立大学法人埼玉大学 基板加工方法及び基板
JP6004338B2 (ja) 2011-02-10 2016-10-05 信越ポリマー株式会社 単結晶基板製造方法および内部改質層形成単結晶部材
JP6004339B2 (ja) 2011-02-10 2016-10-05 信越ポリマー株式会社 内部応力層形成単結晶部材および単結晶基板製造方法
JP5722127B2 (ja) 2011-06-07 2015-05-20 株式会社小松製作所 作業車両の周辺監視装置
RU2469433C1 (ru) 2011-07-13 2012-12-10 Юрий Георгиевич Шретер Способ лазерного отделения эпитаксиальной пленки или слоя эпитаксиальной пленки от ростовой подложки эпитаксиальной полупроводниковой структуры (варианты)
JP2013046924A (ja) 2011-07-27 2013-03-07 Toshiba Mach Co Ltd レーザダイシング方法
JP5917862B2 (ja) * 2011-08-30 2016-05-18 浜松ホトニクス株式会社 加工対象物切断方法
JP6044919B2 (ja) * 2012-02-01 2016-12-14 信越ポリマー株式会社 基板加工方法
JP5843393B2 (ja) 2012-02-01 2016-01-13 信越ポリマー株式会社 単結晶基板の製造方法、単結晶基板、および、内部改質層形成単結晶部材の製造方法
JP5995045B2 (ja) 2012-02-06 2016-09-21 信越ポリマー株式会社 基板加工方法及び基板加工装置
JP6039306B2 (ja) * 2012-08-24 2016-12-07 浜松ホトニクス株式会社 レーザ加工方法
EP2754524B1 (fr) 2013-01-15 2015-11-25 Corning Laser Technologies GmbH Procédé et dispositif destinés au traitement basé sur laser de substrats plats, galette ou élément en verre, utilisant un faisceau laser en ligne
CN105051919A (zh) * 2013-01-16 2015-11-11 Qmat股份有限公司 用于形成光电器件的技术
KR102215918B1 (ko) 2013-03-27 2021-02-16 하마마츠 포토닉스 가부시키가이샤 레이저 가공 장치 및 레이저 가공 방법
DE102013007672A1 (de) 2013-05-03 2014-11-06 Siltectra Gmbh Verfahren und Vorrichtung zur Waferherstellung mit vordefinierter Bruchauslösestelle
CN103380842B (zh) 2013-08-09 2015-03-18 山西省农业科学院经济作物研究所 利用绿豆全株粉制备保健早茶的方法
JP6531885B2 (ja) 2013-10-07 2019-06-19 信越ポリマー株式会社 内部加工層形成単結晶部材およびその製造方法
DE102014013107A1 (de) * 2013-10-08 2015-04-09 Siltectra Gmbh Neuartiges Waferherstellungsverfahren
DE102015000449A1 (de) * 2015-01-15 2016-07-21 Siltectra Gmbh Festkörperteilung mittels Stoffumwandlung
CN108838562B (zh) 2014-11-27 2021-08-17 西尔特克特拉有限责任公司 借助于材料转化的固体分开

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013126927A2 (fr) 2012-02-26 2013-08-29 Solexel, Inc. Systèmes et procédés pour une division par laser et un transfert de couche de dispositif

Also Published As

Publication number Publication date
EP4234148A3 (fr) 2023-10-18
EP3253529B1 (fr) 2023-04-26
US10661392B2 (en) 2020-05-26
US20200061752A1 (en) 2020-02-27
DE102015000449A1 (de) 2016-07-21
WO2016113030A2 (fr) 2016-07-21
CN107107262B (zh) 2021-09-21
WO2016113030A4 (fr) 2016-11-17
CN107107262A (zh) 2017-08-29
US20180133834A1 (en) 2018-05-17
WO2016113030A3 (fr) 2016-09-09
EP3253529A2 (fr) 2017-12-13
CN113770564A (zh) 2021-12-10
US20200262008A1 (en) 2020-08-20
US11014199B2 (en) 2021-05-25

Similar Documents

Publication Publication Date Title
EP3399542B1 (fr) Division de corps solide au moyen d'une conversion de substances
EP3253529B1 (fr) Séparation d'un corps solide par modification du matériau
EP3055098B1 (fr) Procédé de fabrication de tranches de silicium
EP3223994B1 (fr) Méthode de séparation basée sur l'utilisation d'un laser
EP3280577B1 (fr) Procédé de fabrication de tranches avec economie de materiaux
EP3245665B1 (fr) Procédé pour fabriquer une tranche irrégulière
WO2015052218A1 (fr) Création d'un point de départ de fissure ou d'un guide de fissuration afin de permettre un meilleur détachement d'une couche de solide à partir d'un solide
DE102015004603A1 (de) Kombiniertes Waferherstellungsverfahren mit Laserbehandlung und temperaturinduzierten Spannungen
DE102014002600A1 (de) Kombiniertes Waferherstellungsverfahren mit Laserbehandlung und temperaturinduzierten Spannungen
DE102015008034A1 (de) Verfahren zum Führen eines Risses im Randbereich eines Spendersubstrats
EP3137657B1 (fr) Procédé combiné de fabrication de corps solides par traitement au laser et tensions thermo-induites pour la production de corps solides tridimensionnels
EP3147068B1 (fr) Nouveau procédé de fabrication de tranches
EP3608048B1 (fr) Procédé de fabrication d'éléments de corps solide au moyen du traitement laser et de contraintes induites par la température
DE102015004347A1 (de) Erzeugung von physischen Modifikationen mittels LASER im Inneren eines Festkörpers

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION HAS BEEN PUBLISHED

AC Divisional application: reference to earlier application

Ref document number: 3253529

Country of ref document: EP

Kind code of ref document: P

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

AK Designated contracting states

Kind code of ref document: A3

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

RIC1 Information provided on ipc code assigned before grant

Ipc: B23K 103/00 20060101ALI20230911BHEP

Ipc: B23K 26/53 20140101ALI20230911BHEP

Ipc: B28D 5/00 20060101ALI20230911BHEP

Ipc: H01L 21/78 20060101ALI20230911BHEP

Ipc: B23K 26/402 20140101ALI20230911BHEP

Ipc: B23K 26/00 20140101AFI20230911BHEP

Ipc: B23K 26/40 20140101ALI20230911BHEP

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE

17P Request for examination filed

Effective date: 20240410

RBV Designated contracting states (corrected)

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR