EP4160683A3 - Thin-film transistor array substrate and display device - Google Patents
Thin-film transistor array substrate and display device Download PDFInfo
- Publication number
- EP4160683A3 EP4160683A3 EP22191462.5A EP22191462A EP4160683A3 EP 4160683 A3 EP4160683 A3 EP 4160683A3 EP 22191462 A EP22191462 A EP 22191462A EP 4160683 A3 EP4160683 A3 EP 4160683A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- conductorized
- auxiliary electrode
- thin
- display device
- array substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title abstract 2
- 239000010409 thin film Substances 0.000 title abstract 2
- 239000010408 film Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
- H01L29/78693—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate the semiconducting oxide being amorphous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Geometry (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020210131187A KR20230047845A (ko) | 2021-10-01 | 2021-10-01 | 박막 트랜지스터 어레이 기판 및 표시 장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
EP4160683A2 EP4160683A2 (en) | 2023-04-05 |
EP4160683A3 true EP4160683A3 (en) | 2023-05-10 |
Family
ID=83005953
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP22191462.5A Pending EP4160683A3 (en) | 2021-10-01 | 2022-08-22 | Thin-film transistor array substrate and display device |
Country Status (5)
Country | Link |
---|---|
US (1) | US20230104382A1 (ko) |
EP (1) | EP4160683A3 (ko) |
KR (1) | KR20230047845A (ko) |
CN (1) | CN115939145A (ko) |
TW (1) | TWI836608B (ko) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012117936A1 (ja) * | 2011-03-01 | 2012-09-07 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法、並びに表示装置 |
US20140183476A1 (en) * | 2012-12-27 | 2014-07-03 | Lg Display Co. Ltd. | Thin-film transistor, method for manufacturing the same and display device comprising the same |
WO2018016456A1 (en) * | 2016-07-20 | 2018-01-25 | Ricoh Company, Ltd. | Field-effect transistor, method for producing the same, display element, image display device, and system |
US20200402467A1 (en) * | 2019-06-19 | 2020-12-24 | Samsung Display Co., Ltd. | Display device |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100712295B1 (ko) * | 2005-06-22 | 2007-04-27 | 삼성에스디아이 주식회사 | 유기 전계 발광 소자 및 그 제조 방법 |
KR101393637B1 (ko) * | 2006-11-23 | 2014-05-12 | 삼성디스플레이 주식회사 | 표시판 |
KR20120140474A (ko) * | 2011-06-21 | 2012-12-31 | 삼성디스플레이 주식회사 | 유기 발광 디스플레이 장치와, 이의 제조 방법 |
KR102458907B1 (ko) * | 2015-12-29 | 2022-10-25 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
JP2017162852A (ja) * | 2016-03-07 | 2017-09-14 | 株式会社ジャパンディスプレイ | 半導体装置および表示装置 |
KR102493128B1 (ko) * | 2016-04-12 | 2023-01-31 | 삼성디스플레이 주식회사 | 박막트랜지스터 기판, 이를 포함하는 표시 장치 및 그 제조 방법 |
TWI713003B (zh) * | 2016-09-20 | 2020-12-11 | 日商半導體能源研究所股份有限公司 | 顯示裝置及電子機器 |
-
2021
- 2021-10-01 KR KR1020210131187A patent/KR20230047845A/ko unknown
-
2022
- 2022-06-30 US US17/855,036 patent/US20230104382A1/en active Pending
- 2022-07-15 CN CN202210837498.1A patent/CN115939145A/zh active Pending
- 2022-08-22 EP EP22191462.5A patent/EP4160683A3/en active Pending
- 2022-09-16 TW TW111135138A patent/TWI836608B/zh active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012117936A1 (ja) * | 2011-03-01 | 2012-09-07 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法、並びに表示装置 |
US20140183476A1 (en) * | 2012-12-27 | 2014-07-03 | Lg Display Co. Ltd. | Thin-film transistor, method for manufacturing the same and display device comprising the same |
WO2018016456A1 (en) * | 2016-07-20 | 2018-01-25 | Ricoh Company, Ltd. | Field-effect transistor, method for producing the same, display element, image display device, and system |
US20200402467A1 (en) * | 2019-06-19 | 2020-12-24 | Samsung Display Co., Ltd. | Display device |
Also Published As
Publication number | Publication date |
---|---|
EP4160683A2 (en) | 2023-04-05 |
KR20230047845A (ko) | 2023-04-10 |
TW202316678A (zh) | 2023-04-16 |
CN115939145A (zh) | 2023-04-07 |
US20230104382A1 (en) | 2023-04-06 |
TWI836608B (zh) | 2024-03-21 |
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Legal Events
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PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
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17P | Request for examination filed |
Effective date: 20220822 |
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RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01L 29/786 20060101ALI20230331BHEP Ipc: H01L 29/45 20060101ALI20230331BHEP Ipc: H01L 27/12 20060101AFI20230331BHEP |
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RBV | Designated contracting states (corrected) |
Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |