EP4141938A4 - SOLID-STATE IMAGING ELEMENT AND ELECTRONIC DEVICE - Google Patents

SOLID-STATE IMAGING ELEMENT AND ELECTRONIC DEVICE Download PDF

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Publication number
EP4141938A4
EP4141938A4 EP21793193.0A EP21793193A EP4141938A4 EP 4141938 A4 EP4141938 A4 EP 4141938A4 EP 21793193 A EP21793193 A EP 21793193A EP 4141938 A4 EP4141938 A4 EP 4141938A4
Authority
EP
European Patent Office
Prior art keywords
electronic device
solid state
state imaging
imaging element
solid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP21793193.0A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP4141938A1 (en
Inventor
Yoshiaki Masuda
Kazuyoshi Yamashita
Shinichiro Kurihara
Syogo Kurogi
Yusuke Uesaka
Toshiki Sakamoto
Hiroyuki Kawano
Masatoshi Iwamoto
Takashi Terada
Sintaro Nakajiki
Shinta Kobayashi
Chihiro Arai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
Original Assignee
Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of EP4141938A1 publication Critical patent/EP4141938A1/en
Publication of EP4141938A4 publication Critical patent/EP4141938A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/20—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from infrared radiation only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
EP21793193.0A 2020-04-20 2021-04-14 SOLID-STATE IMAGING ELEMENT AND ELECTRONIC DEVICE Withdrawn EP4141938A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020074995 2020-04-20
PCT/JP2021/015499 WO2021215337A1 (ja) 2020-04-20 2021-04-14 固体撮像素子および電子機器

Publications (2)

Publication Number Publication Date
EP4141938A1 EP4141938A1 (en) 2023-03-01
EP4141938A4 true EP4141938A4 (en) 2023-08-23

Family

ID=78269297

Family Applications (1)

Application Number Title Priority Date Filing Date
EP21793193.0A Withdrawn EP4141938A4 (en) 2020-04-20 2021-04-14 SOLID-STATE IMAGING ELEMENT AND ELECTRONIC DEVICE

Country Status (7)

Country Link
US (1) US20230230986A1 (https=)
EP (1) EP4141938A4 (https=)
JP (1) JPWO2021215337A1 (https=)
KR (1) KR20230007316A (https=)
CN (1) CN115210874A (https=)
TW (1) TW202145549A (https=)
WO (1) WO2021215337A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230068895A (ko) * 2021-11-11 2023-05-18 삼성전자주식회사 이미지 센서
TWI799057B (zh) * 2022-01-04 2023-04-11 力晶積成電子製造股份有限公司 影像感測器積體晶片及其形成方法
JP2024021322A (ja) * 2022-08-03 2024-02-16 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器
WO2024135127A1 (ja) * 2022-12-23 2024-06-27 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置
CN116435383A (zh) * 2023-04-28 2023-07-14 深圳市汇顶科技股份有限公司 光学传感装置、制备方法和电子设备

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010177704A (ja) * 2010-04-16 2010-08-12 Sony Corp 固体撮像装置、その製造方法および撮像装置
US20150228689A1 (en) * 2014-02-11 2015-08-13 Semiconductor Components Industries, Llc Imaging systems with infrared pixels having increased quantum efficiency

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Publication number Priority date Publication date Assignee Title
JP2006054262A (ja) * 2004-08-10 2006-02-23 Sony Corp 固体撮像装置
JP4826111B2 (ja) * 2005-03-17 2011-11-30 ソニー株式会社 固体撮像素子および固体撮像素子の製造方法および画像撮影装置
US20070001100A1 (en) * 2005-06-30 2007-01-04 Taiwan Semiconductor Manufacturing Company, Ltd. Light reflection for backside illuminated sensor
JP4525671B2 (ja) * 2006-12-08 2010-08-18 ソニー株式会社 固体撮像装置
JP2010056167A (ja) * 2008-08-26 2010-03-11 Sony Corp 固体撮像素子及びその製造方法
FR2935839B1 (fr) * 2008-09-05 2011-08-05 Commissariat Energie Atomique Capteur d'images cmos a reflexion lumineuse
JP5521312B2 (ja) * 2008-10-31 2014-06-11 ソニー株式会社 固体撮像装置及びその製造方法、並びに電子機器
JP2010118412A (ja) * 2008-11-11 2010-05-27 Panasonic Corp 固体撮像装置及びその製造方法
KR101545638B1 (ko) * 2008-12-17 2015-08-19 삼성전자 주식회사 이미지 센서 및 그 제조 방법, 이미지 센서를 포함하는 장치 및 그 제조 방법
US8299554B2 (en) * 2009-08-31 2012-10-30 International Business Machines Corporation Image sensor, method and design structure including non-planar reflector
JP5263220B2 (ja) * 2010-04-16 2013-08-14 ソニー株式会社 固体撮像装置、その製造方法および撮像装置
JP2012064709A (ja) * 2010-09-15 2012-03-29 Sony Corp 固体撮像装置及び電子機器
JP2012084815A (ja) * 2010-10-14 2012-04-26 Sharp Corp 固体撮像装置および電子情報機器
US8767108B2 (en) * 2011-03-14 2014-07-01 Sony Corporation Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus
KR102109221B1 (ko) * 2012-05-16 2020-05-11 소니 세미컨덕터 솔루션즈 가부시키가이샤 고체 촬상 장치 및 전자 기기
JP2014086551A (ja) * 2012-10-23 2014-05-12 Canon Inc 撮像装置及びカメラ
JP2016082133A (ja) * 2014-10-20 2016-05-16 ソニー株式会社 固体撮像素子及び電子機器
JP2016219566A (ja) * 2015-05-19 2016-12-22 株式会社東芝 固体撮像素子およびその製造方法
JP2017139286A (ja) 2016-02-02 2017-08-10 ソニー株式会社 撮像素子、及び、カメラシステム
CN109661727B (zh) * 2016-09-02 2024-01-19 索尼半导体解决方案公司 固态成像装置及其制造方法和电子设备
JPWO2018079296A1 (ja) * 2016-10-27 2019-09-12 ソニーセミコンダクタソリューションズ株式会社 撮像素子及び電子機器
CN107833900A (zh) * 2017-11-07 2018-03-23 德淮半导体有限公司 背照式互补金属氧化物半导体图像传感器及其制造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010177704A (ja) * 2010-04-16 2010-08-12 Sony Corp 固体撮像装置、その製造方法および撮像装置
US20150228689A1 (en) * 2014-02-11 2015-08-13 Semiconductor Components Industries, Llc Imaging systems with infrared pixels having increased quantum efficiency

Non-Patent Citations (1)

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Title
See also references of WO2021215337A1 *

Also Published As

Publication number Publication date
JPWO2021215337A1 (https=) 2021-10-28
EP4141938A1 (en) 2023-03-01
CN115210874A (zh) 2022-10-18
KR20230007316A (ko) 2023-01-12
WO2021215337A1 (ja) 2021-10-28
US20230230986A1 (en) 2023-07-20
TW202145549A (zh) 2021-12-01

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