JPWO2021215337A1 - - Google Patents
Info
- Publication number
- JPWO2021215337A1 JPWO2021215337A1 JP2022517004A JP2022517004A JPWO2021215337A1 JP WO2021215337 A1 JPWO2021215337 A1 JP WO2021215337A1 JP 2022517004 A JP2022517004 A JP 2022517004A JP 2022517004 A JP2022517004 A JP 2022517004A JP WO2021215337 A1 JPWO2021215337 A1 JP WO2021215337A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/807—Pixel isolation structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/191—Photoconductor image sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/20—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from infrared radiation only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/182—Colour image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/184—Infrared image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8063—Microlenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8067—Reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/199—Back-illuminated image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8053—Colour filters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8057—Optical shielding
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020074995 | 2020-04-20 | ||
| PCT/JP2021/015499 WO2021215337A1 (ja) | 2020-04-20 | 2021-04-14 | 固体撮像素子および電子機器 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2021215337A1 true JPWO2021215337A1 (https=) | 2021-10-28 |
Family
ID=78269297
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022517004A Pending JPWO2021215337A1 (https=) | 2020-04-20 | 2021-04-14 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20230230986A1 (https=) |
| EP (1) | EP4141938A4 (https=) |
| JP (1) | JPWO2021215337A1 (https=) |
| KR (1) | KR20230007316A (https=) |
| CN (1) | CN115210874A (https=) |
| TW (1) | TW202145549A (https=) |
| WO (1) | WO2021215337A1 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20230068895A (ko) * | 2021-11-11 | 2023-05-18 | 삼성전자주식회사 | 이미지 센서 |
| TWI799057B (zh) * | 2022-01-04 | 2023-04-11 | 力晶積成電子製造股份有限公司 | 影像感測器積體晶片及其形成方法 |
| JP2024021322A (ja) * | 2022-08-03 | 2024-02-16 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置及び電子機器 |
| WO2024135127A1 (ja) * | 2022-12-23 | 2024-06-27 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置 |
| CN116435383A (zh) * | 2023-04-28 | 2023-07-14 | 深圳市汇顶科技股份有限公司 | 光学传感装置、制备方法和电子设备 |
Citations (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006054262A (ja) * | 2004-08-10 | 2006-02-23 | Sony Corp | 固体撮像装置 |
| JP2006261372A (ja) * | 2005-03-17 | 2006-09-28 | Sony Corp | 固体撮像素子および固体撮像素子の製造方法および画像撮影装置 |
| JP2007013147A (ja) * | 2005-06-30 | 2007-01-18 | Taiwan Semiconductor Manufacturing Co Ltd | 背面照射型半導体デバイス |
| JP2008147333A (ja) * | 2006-12-08 | 2008-06-26 | Sony Corp | 固体撮像装置、その製造方法および撮像装置 |
| JP2010056167A (ja) * | 2008-08-26 | 2010-03-11 | Sony Corp | 固体撮像素子及びその製造方法 |
| JP2010062567A (ja) * | 2008-09-05 | 2010-03-18 | Commissariat A L'energie Atomique | 光反射ｃｍｏｓイメージセンサ |
| JP2010118412A (ja) * | 2008-11-11 | 2010-05-27 | Panasonic Corp | 固体撮像装置及びその製造方法 |
| JP2010147474A (ja) * | 2008-12-17 | 2010-07-01 | Samsung Electronics Co Ltd | イメージセンサ素子 |
| JP2010166094A (ja) * | 2010-04-16 | 2010-07-29 | Sony Corp | 固体撮像装置、その製造方法および撮像装置 |
| JP2011054963A (ja) * | 2009-08-31 | 2011-03-17 | Internatl Business Mach Corp <Ibm> | イメージ・センサ及びその製造方法 |
| JP2012064709A (ja) * | 2010-09-15 | 2012-03-29 | Sony Corp | 固体撮像装置及び電子機器 |
| WO2013172232A1 (ja) * | 2012-05-16 | 2013-11-21 | ソニー株式会社 | 固体撮像装置、及び、電子機器 |
| JP2014086551A (ja) * | 2012-10-23 | 2014-05-12 | Canon Inc | 撮像装置及びカメラ |
| US20150228689A1 (en) * | 2014-02-11 | 2015-08-13 | Semiconductor Components Industries, Llc | Imaging systems with infrared pixels having increased quantum efficiency |
| JP2016082133A (ja) * | 2014-10-20 | 2016-05-16 | ソニー株式会社 | 固体撮像素子及び電子機器 |
| WO2018043654A1 (ja) * | 2016-09-02 | 2018-03-08 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置およびその製造方法、並びに電子機器 |
| WO2018079296A1 (ja) * | 2016-10-27 | 2018-05-03 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子及び電子機器 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5521312B2 (ja) * | 2008-10-31 | 2014-06-11 | ソニー株式会社 | 固体撮像装置及びその製造方法、並びに電子機器 |
| JP5131309B2 (ja) * | 2010-04-16 | 2013-01-30 | ソニー株式会社 | 固体撮像装置、その製造方法および撮像装置 |
| JP2012084815A (ja) * | 2010-10-14 | 2012-04-26 | Sharp Corp | 固体撮像装置および電子情報機器 |
| US8767108B2 (en) * | 2011-03-14 | 2014-07-01 | Sony Corporation | Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus |
| JP2016219566A (ja) * | 2015-05-19 | 2016-12-22 | 株式会社東芝 | 固体撮像素子およびその製造方法 |
| JP2017139286A (ja) | 2016-02-02 | 2017-08-10 | ソニー株式会社 | 撮像素子、及び、カメラシステム |
| CN107833900A (zh) * | 2017-11-07 | 2018-03-23 | 德淮半导体有限公司 | 背照式互补金属氧化物半导体图像传感器及其制造方法 |
-
2021
- 2021-04-14 JP JP2022517004A patent/JPWO2021215337A1/ja active Pending
- 2021-04-14 EP EP21793193.0A patent/EP4141938A4/en not_active Withdrawn
- 2021-04-14 US US17/996,043 patent/US20230230986A1/en active Pending
- 2021-04-14 WO PCT/JP2021/015499 patent/WO2021215337A1/ja not_active Ceased
- 2021-04-14 CN CN202180018230.9A patent/CN115210874A/zh active Pending
- 2021-04-14 KR KR1020227033230A patent/KR20230007316A/ko not_active Abandoned
- 2021-04-15 TW TW110113658A patent/TW202145549A/zh unknown
Patent Citations (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006054262A (ja) * | 2004-08-10 | 2006-02-23 | Sony Corp | 固体撮像装置 |
| JP2006261372A (ja) * | 2005-03-17 | 2006-09-28 | Sony Corp | 固体撮像素子および固体撮像素子の製造方法および画像撮影装置 |
| JP2007013147A (ja) * | 2005-06-30 | 2007-01-18 | Taiwan Semiconductor Manufacturing Co Ltd | 背面照射型半導体デバイス |
| JP2008147333A (ja) * | 2006-12-08 | 2008-06-26 | Sony Corp | 固体撮像装置、その製造方法および撮像装置 |
| JP2010056167A (ja) * | 2008-08-26 | 2010-03-11 | Sony Corp | 固体撮像素子及びその製造方法 |
| JP2010062567A (ja) * | 2008-09-05 | 2010-03-18 | Commissariat A L'energie Atomique | 光反射ｃｍｏｓイメージセンサ |
| JP2010118412A (ja) * | 2008-11-11 | 2010-05-27 | Panasonic Corp | 固体撮像装置及びその製造方法 |
| JP2010147474A (ja) * | 2008-12-17 | 2010-07-01 | Samsung Electronics Co Ltd | イメージセンサ素子 |
| JP2011054963A (ja) * | 2009-08-31 | 2011-03-17 | Internatl Business Mach Corp <Ibm> | イメージ・センサ及びその製造方法 |
| JP2010166094A (ja) * | 2010-04-16 | 2010-07-29 | Sony Corp | 固体撮像装置、その製造方法および撮像装置 |
| JP2012064709A (ja) * | 2010-09-15 | 2012-03-29 | Sony Corp | 固体撮像装置及び電子機器 |
| WO2013172232A1 (ja) * | 2012-05-16 | 2013-11-21 | ソニー株式会社 | 固体撮像装置、及び、電子機器 |
| JP2014086551A (ja) * | 2012-10-23 | 2014-05-12 | Canon Inc | 撮像装置及びカメラ |
| US20150228689A1 (en) * | 2014-02-11 | 2015-08-13 | Semiconductor Components Industries, Llc | Imaging systems with infrared pixels having increased quantum efficiency |
| JP2016082133A (ja) * | 2014-10-20 | 2016-05-16 | ソニー株式会社 | 固体撮像素子及び電子機器 |
| WO2018043654A1 (ja) * | 2016-09-02 | 2018-03-08 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置およびその製造方法、並びに電子機器 |
| WO2018079296A1 (ja) * | 2016-10-27 | 2018-05-03 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子及び電子機器 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP4141938A1 (en) | 2023-03-01 |
| CN115210874A (zh) | 2022-10-18 |
| KR20230007316A (ko) | 2023-01-12 |
| WO2021215337A1 (ja) | 2021-10-28 |
| US20230230986A1 (en) | 2023-07-20 |
| EP4141938A4 (en) | 2023-08-23 |
| TW202145549A (zh) | 2021-12-01 |
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