WO2021215337A1 - 固体撮像素子および電子機器 - Google Patents

固体撮像素子および電子機器 Download PDF

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Publication number
WO2021215337A1
WO2021215337A1 PCT/JP2021/015499 JP2021015499W WO2021215337A1 WO 2021215337 A1 WO2021215337 A1 WO 2021215337A1 JP 2021015499 W JP2021015499 W JP 2021015499W WO 2021215337 A1 WO2021215337 A1 WO 2021215337A1
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Prior art keywords
pixel
light
metal layer
solid
light receiving
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PCT/JP2021/015499
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English (en)
French (fr)
Japanese (ja)
Inventor
佳明 桝田
和芳 山下
槙一郎 栗原
章悟 黒木
祐介 上坂
俊起 坂元
広行 河野
政利 岩本
寺田　尚史
慎太郎 中食
進大 小林
荒井　千広
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Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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Priority to CN202180018230.9A priority Critical patent/CN115210874A/zh
Priority to JP2022517004A priority patent/JPWO2021215337A1/ja
Priority to KR1020227033230A priority patent/KR20230007316A/ko
Priority to US17/996,043 priority patent/US20230230986A1/en
Priority to EP21793193.0A priority patent/EP4141938A4/en
Publication of WO2021215337A1 publication Critical patent/WO2021215337A1/ja
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/20—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from infrared radiation only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
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    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding

Definitions

  • the present disclosure relates to a solid-state image sensor and an electronic device.
  • a solid-state image sensor capable of simultaneously acquiring a visible light image and an infrared image has been known.
  • a light receiving pixel that receives visible light and a light receiving pixel that receives infrared light are formed side by side in the same pixel array portion (see, for example, Patent Document 1).
  • the visible light receiving pixel and the infrared light receiving pixel are formed in the same pixel array portion, the infrared light incident on the infrared light receiving pixel leaks into the adjacent receiving pixel, and the adjacent receiving pixel There is a risk of color mixing.
  • a solid-state image sensor includes a first light receiving pixel, a second light receiving pixel, and a metal layer.
  • the first light receiving pixel receives visible light.
  • the second light receiving pixel receives infrared light.
  • the metal layer is provided so as to face at least one of the photoelectric conversion part of the first light receiving pixel and the photoelectric conversion part of the second light receiving pixel on the side opposite to the light incident side, and is mainly composed of tungsten. be.
  • a solid-state image sensor capable of simultaneously acquiring a visible light image and an infrared image.
  • a light receiving pixel that receives visible light and a light receiving pixel that receives infrared light are formed side by side in the same pixel array portion.
  • the visible light receiving pixel and the infrared light receiving pixel are formed in the same pixel array portion, the infrared light incident on the infrared light receiving pixel leaks into the adjacent receiving pixel, and the adjacent receiving pixel There is a risk of color mixing.
  • infrared light has a longer wavelength than visible light and therefore has a longer optical path length, so that infrared light that has passed through a photodiode is reflected by the lower wiring layer and easily leaks to adjacent light receiving pixels. Is.
  • FIG. 1 is a system configuration diagram showing a schematic configuration example of the solid-state image sensor 1 according to the embodiment of the present disclosure.
  • the solid-state image sensor 1 which is a CMOS image sensor includes a pixel array unit 10, a system control unit 12, a vertical drive unit 13, a column readout circuit unit 14, a column signal processing unit 15, and the column signal processing unit 15.
  • a horizontal drive unit 16 and a signal processing unit 17 are provided.
  • the pixel array unit 10, the system control unit 12, the vertical drive unit 13, the column readout circuit unit 14, the column signal processing unit 15, the horizontal drive unit 16, and the signal processing unit 17 are electrically connected on the same semiconductor substrate. It is provided on a plurality of laminated semiconductor substrates.
  • the pixel array unit 10 is an effective unit having a photoelectric conversion element (photodiode PD (see FIG. 4) or the like) capable of photoelectrically converting an amount of electric charge according to the amount of incident light, accumulating it inside, and outputting it as a signal.
  • Pixels (hereinafter, also referred to as unit pixels) 11 are two-dimensionally arranged in a matrix.
  • the pixel array unit 10 includes, in addition to the effective unit pixel 11, a dummy unit pixel having a structure that does not have a photodiode PD or the like, a light-shielding unit pixel that blocks light incident from the outside by blocking the light-receiving surface, and the like. May include areas arranged in rows and / or columns.
  • the light-shielding unit pixel may have the same configuration as the effective unit pixel 11 except that the light-receiving surface is shielded from light. Further, in the following, the light charge of the amount of charge corresponding to the amount of incident light may be simply referred to as "charge”, and the unit pixel 11 may be simply referred to as "pixel".
  • pixel drive lines LD are formed for each row along the left-right direction (arrangement direction of pixels in the pixel row) with respect to the matrix-like pixel array, and vertical pixel wiring is performed for each column.
  • the LV is formed along the vertical direction (arrangement direction of pixels in the pixel array) in the drawing.
  • One end of the pixel drive line LD is connected to the output end corresponding to each line of the vertical drive unit 13.
  • the column reading circuit unit 14 includes at least a circuit that supplies a constant current to the unit pixel 11 in the selected row in the pixel array unit 10 for each column, a current mirror circuit, and a changeover switch for the unit pixel 11 to be read.
  • the column readout circuit unit 14 constitutes an amplifier together with the transistors in the selected pixels in the pixel array unit 10, converts the optical charge signal into a voltage signal, and outputs the light charge signal to the vertical pixel wiring LV.
  • the vertical drive unit 13 includes a shift register, an address decoder, and the like, and drives each unit pixel 11 of the pixel array unit 10 at the same time for all pixels or in line units. Although the specific configuration of the vertical drive unit 13 is not shown, it has a read scanning system and a sweep scanning system or a batch sweep and batch transfer system.
  • the read-out scanning system selectively scans the unit pixels 11 of the pixel array unit 10 row by row in order to read the pixel signal from the unit pixels 11.
  • sweep scanning is performed ahead of the read scan performed by the read scan system by the time of the shutter speed.
  • batch sweeping is performed prior to batch transfer by the time of shutter speed.
  • unnecessary charges are swept (reset) from the photodiode PD or the like of the unit pixel 11 of the read line.
  • electronic shutter operation is performed by sweeping out (resetting) unnecessary charges.
  • the electronic shutter operation refers to an operation of discarding unnecessary light charges accumulated in the photodiode PD or the like until just before and starting a new exposure (starting the accumulation of light charges).
  • the signal read by the read operation by the read scanning system corresponds to the amount of light incidented after the read operation or the electronic shutter operation immediately before that.
  • the period from the read timing by the immediately preceding read operation or the sweep timing by the electronic shutter operation to the read timing by the current read operation is the light charge accumulation time (exposure time) in the unit pixel 11.
  • the time from batch sweeping to batch transfer is the accumulated time (exposure time).
  • the pixel signal output from each unit pixel 11 of the pixel row selectively scanned by the vertical drive unit 13 is supplied to the column signal processing unit 15 through each of the vertical pixel wiring LVs.
  • the column signal processing unit 15 performs predetermined signal processing on the pixel signal output from each unit pixel 11 of the selected row through the vertical pixel wiring LV for each pixel column of the pixel array unit 10, and after the signal processing, the column signal processing unit 15 performs predetermined signal processing. Temporarily holds the pixel signal.
  • the column signal processing unit 15 performs at least noise removal processing, for example, CDS (Correlated Double Sampling) processing as signal processing.
  • CDS Correlated Double Sampling
  • the CDS processing by the column signal processing unit 15 removes pixel-specific fixed pattern noise such as reset noise and threshold variation of the amplification transistor AMP.
  • the column signal processing unit 15 may be provided with, for example, an AD conversion function so as to output the pixel signal as a digital signal.
  • the horizontal drive unit 16 includes a shift register, an address decoder, and the like, and sequentially selects unit circuits corresponding to the pixel strings of the column signal processing unit 15. By the selective scanning by the horizontal drive unit 16, the pixel signals signal-processed by the column signal processing unit 15 are sequentially output to the signal processing unit 17.
  • the system control unit 12 includes a timing generator that generates various timing signals, and based on the various timing signals generated by the timing generator, the vertical drive unit 13, the column signal processing unit 15, the horizontal drive unit 16, and the like Drive control is performed.
  • the solid-state image sensor 1 further includes a signal processing unit 17 and a data storage unit (not shown).
  • the signal processing unit 17 has at least an addition processing function, and performs various signal processing such as addition processing on the pixel signal output from the column signal processing unit 15.
  • the data storage unit temporarily stores the data required for the signal processing in the signal processing unit 17.
  • the signal processing unit 17 and the data storage unit may be processed by an external signal processing unit provided on a substrate different from the solid-state image sensor 1, for example, a DSP (Digital Signal Processor) or software, or the solid-state image sensor. It may be mounted on the same substrate as 1.
  • DSP Digital Signal Processor
  • FIG. 2 is a plan view showing an example of the pixel array unit 10 according to the embodiment of the present disclosure.
  • a plurality of unit pixels 11 are arranged side by side in a matrix in the pixel array unit 10 according to the embodiment.
  • the plurality of unit pixels 11 include an R pixel 11R that receives red light, a G pixel 11G that receives green light, a B pixel 11B that receives blue light, and an IR pixel that receives infrared light. 11IR and is included.
  • the R pixel 11R, G pixel 11G, and B pixel 11B are examples of the first light receiving pixel, and are also collectively referred to as "visible light pixels" below. Further, the IR pixel 11IR is an example of the second light receiving pixel.
  • a separation region 23 is provided between adjacent unit pixels 11.
  • the separation regions 23 are arranged in a grid pattern in a plan view in the pixel array unit 10.
  • visible light pixels of the same type may be arranged in an L shape, and IR pixels 11IR may be arranged in the remaining portions.
  • FIG. 3 is a plan view showing another example of the pixel array unit 10 according to the embodiment of the present disclosure.
  • FIG. 4 is a cross-sectional view schematically showing the structure of the pixel array unit 10 according to the embodiment of the present disclosure, and is a view corresponding to the cross-sectional view taken along the line AA of FIG.
  • the pixel array unit 10 includes a semiconductor layer 20, a wiring layer 30, and an optical layer 40. Then, in the pixel array unit 10, the optical layer 40, the semiconductor layer 20, and the wiring layer 30 are laminated in this order from the side where the light L from the outside is incident (hereinafter, also referred to as the light incident side).
  • the semiconductor layer 20 has a first conductive type (for example, P type) semiconductor region 21 and a second conductive type (for example, N type) semiconductor region 22. Then, the second conductive type semiconductor region 22 is formed in the first conductive type semiconductor region 21 in pixel units, so that the photodiode PD by the PN junction is formed.
  • a photodiode PD is an example of a photoelectric conversion unit.
  • the semiconductor layer 20 is provided with the above-mentioned separation region 23.
  • the separation region 23 separates the photodiode PDs of the unit pixels 11 adjacent to each other.
  • the separation region 23 is formed by, for example, a trench provided by digging the semiconductor region 22. Further, the separation region 23 is provided with a light-shielding wall 24 and a metal oxide film 25.
  • the light-shielding wall 24 is a wall-shaped film provided along the separation region 23 in a plan view and shields light obliquely incident from adjacent unit pixels 11. By providing such a light-shielding wall 24, it is possible to suppress the incident of light transmitted through the adjacent unit pixels 11, so that the occurrence of color mixing can be suppressed.
  • the light-shielding wall 24 is made of a material having a light-shielding property such as various metals (tungsten, aluminum, silver, copper and alloys thereof) and a black organic film. Further, in the embodiment, the light-shielding wall 24 does not penetrate the semiconductor layer 20 and extends from the surface of the semiconductor layer 20 on the light incident side to the middle of the semiconductor layer 20.
  • the metal oxide film 25 is provided so as to cover the light-shielding wall 24 in the separation region 23. Further, the metal oxide film 25 is provided so as to cover the surface of the semiconductor region 21 on the light incident side.
  • the metal oxide film 25 is made of, for example, a material having a fixed charge (for example, hafnium oxide, tantalum oxide, aluminum oxide, zirconium oxide, etc.).
  • an antireflection film, an insulating film, or the like may be separately provided between the metal oxide film 25 and the light-shielding wall 24.
  • the wiring layer 30 is arranged on the surface of the semiconductor layer 20 opposite to the light incident side.
  • the wiring layer 30 is configured by forming a plurality of layers of wiring 32 and a plurality of pixel transistors 33 in the interlayer insulating film 31.
  • the plurality of pixel transistors 33 read out the electric charge accumulated in the photodiode PD and the like.
  • the wiring layer 30 according to the embodiment further has a metal layer 34 composed of a metal containing tungsten as a main component.
  • the metal layer 34 is provided on the light incident side of the wiring 32 of the plurality of layers in each unit pixel 11. Details of the metal layer 34 will be described later.
  • the optical layer 40 is arranged on the surface of the semiconductor layer 20 on the light incident side.
  • the optical layer 40 includes an IR cut filter 41, a flattening film 42, a color filter 43, and an OCL (On-Chip Lens) 44.
  • the IR cut filter 41 is formed of an organic material to which a near-infrared absorbing dye is added as an organic coloring material.
  • the IR cut filter 41 is arranged on the light incident side surface of the semiconductor layer 20 in the visible light pixels (R pixel 11R, G pixel 11G and B pixel 11B), and is arranged on the light incident side surface of the semiconductor layer 20 in the IR pixel 11IR. Is not placed in. Details of the IR cut filter 41 will be described later.
  • the flattening film 42 is provided to flatten the surface on which the color filter 43 and the OCL 44 are formed and to avoid unevenness generated in the rotary coating process when forming the color filter 43 and the OCL 44.
  • the flattening film 42 is formed of, for example, an organic material (for example, acrylic resin).
  • the flattening film 42 is not limited to the case where it is formed of an organic material, and may be formed of silicon oxide, silicon nitride, or the like.
  • the flattening film 42 is in direct contact with the metal oxide film 25 of the semiconductor layer 20 in the IR pixel 11IR.
  • the color filter 43 is an optical filter that transmits light of a predetermined wavelength among the light L focused by the OCL 44.
  • the color filter 43 is arranged on the surface of the flattening film 42 on the light incident side of the visible light pixels (R pixel 11R, G pixel 11G, and B pixel 11B).
  • the color filter 43 includes, for example, a color filter 43R that transmits red light, a color filter 43G that transmits green light, and a color filter 43B that transmits blue light.
  • the color filter 43R is provided on the R pixel 11R
  • the color filter 43G is provided on the G pixel 11G
  • the color filter 43B is provided on the B pixel 11B. Further, in the embodiment, the color filter 43 is not arranged on the IR pixel 11IR.
  • the OCL 44 is a lens provided for each unit pixel 11 and condensing the light L on the photodiode PD of each unit pixel 11.
  • OCL44 is made of, for example, an acrylic resin or the like. Further, as described above, since the color filter 43 is not provided on the IR pixel 11IR, the OCL 44 is in direct contact with the flattening film 42 on the IR pixel 11IR.
  • a light-shielding wall 45 is provided at a position corresponding to the separation region 23.
  • the light-shielding wall 45 is a wall-shaped film that shields light obliquely incident from adjacent unit pixels 11, and is provided so as to be connected to the light-shielding wall 24.
  • the light-shielding wall 45 By providing the light-shielding wall 45, it is possible to suppress the incident of light transmitted through the IR cut filter 41 and the flattening film 42 of the adjacent unit pixel 11, so that the occurrence of color mixing can be suppressed.
  • the light-shielding wall 45 is made of, for example, aluminum or tungsten.
  • the occurrence of color mixing can be suppressed by arranging the metal layer 34 made of a metal containing tungsten as a main component in each unit pixel 11. The reason for this will be described below.
  • FIG. 5 is a diagram for explaining the function of the metal layer 34 according to the embodiment of the present disclosure. If the metal layer 34 is not provided in each unit pixel 11, among the light L incident on the IR pixel 11IR, the light L that has passed through the semiconductor layer 20 is reflected by the wiring 32 as stray light Ls and is adjacent to the light L. It leaks into the unit pixel 11.
  • Infrared light in particular has a longer wavelength than visible light, so that the optical path length is longer. Therefore, the phenomenon of leaking into the adjacent unit pixel 11 as stray light Ls is remarkably observed. Further, since copper or a copper alloy used as the wiring 32 has a refractive index significantly different from that of silicon in the infrared region (refractive index n ⁇ 0.3), the leaked stray light Ls is diffusely reflected. As a result, the crosstalk characteristics of the pixel array unit 10 are deteriorated.
  • the metal layer 34 is provided so as to face the photodiode PD of the visible light pixel and the IR pixel 11IR on the side opposite to the light incident side. As a result, as shown in FIG. 5, it is possible to prevent the light L that has passed through the photodiode PD of the IR pixel 11IR from reaching the wiring 32 of the wiring layer 30.
  • the tungsten constituting the metal layer 34 has a refractive index close to that of silicon in the infrared region (refractive index n ⁇ 3.5), so that the light L is reflected by the photodiode PD of the IR pixel 11IR without being diffusely reflected. Because it can be done.
  • the embodiment it is possible to prevent the stray light Ls reflected by the wiring 32 from leaking to the adjacent unit pixel 11, and therefore, in the pixel array unit 10 in which the visible light pixel and the IR pixel 11IR are arranged side by side, the colors are mixed. Occurrence can be suppressed.
  • the main component of the metal layer 34 is tungsten having a high melting point, the metal layer 34 does not significantly deteriorate even in the manufacturing process of the pixel array portion 10 after the metal layer 34 is formed.
  • the manufacturing process of 34 can be easily incorporated.
  • the metal layer 34 is composed of a metal containing tungsten as a main component is shown, but the metal layer 34 does not necessarily have to contain tungsten as a main component.
  • a material having a refractive index of 1 or more in the infrared region may be used as the metal layer 34.
  • This also makes it possible to reflect the light L on the photodiode PD of the IR pixel 11IR without diffusely reflecting it, so that the generation of color mixing caused by the IR pixel 11IR can be suppressed.
  • a material having an electric resistance of 20 ( ⁇ m) or less may be used as the metal layer 34.
  • the light L can be reflected by the photodiode PD of the IR pixel 11IR without being diffusely reflected, so that the generation of color mixing caused by the IR pixel 11IR can be suppressed.
  • the metal layer 34 is provided in the wiring layer 30 on the light incident side of the wiring 32 having a plurality of layers. As a result, it is possible to further prevent the light L that has passed through the photodiode PD of the IR pixel 11IR from reaching the wiring 32 of the wiring layer 30.
  • the embodiment it is possible to further suppress the occurrence of color mixing in the pixel array unit 10 in which the visible light pixels and the IR pixels 11IR are arranged side by side.
  • the metal layer 34 may be connected to the ground potential via a wiring (not shown). As a result, in the manufacturing process of the pixel array unit 10, it is possible to suppress the occurrence of arcing caused by the metal layer 34, so that the pixel array unit 10 can be stably manufactured.
  • the metal layer 34 is not limited to the case where it is connected to the ground potential, and the metal layer 34 may function as a part of the wiring 32 of the wiring layer 30. As a result, the wiring 32 can be partially omitted, so that the manufacturing cost of the pixel array unit 10 can be reduced.
  • a barrier metal layer having a high barrier property is provided on at least one main surface of the metal layer 34 (that is, the main surface on the light incident surface side or the main surface on the opposite side to the light incident surface).
  • a barrier metal layer is composed of, for example, a metal such as tantalum, titanium, ruthenium, cobalt, or manganese.
  • the adhesion between the metal layer 34 and the interlayer insulating film 31 can be increased, so that the reliability of the pixel array unit 10 can be improved.
  • the distance between the lower end of the light-shielding wall 24 and the surface of the metal layer 34 in the thickness direction is preferably in the range of 500 (nm) to 1000 (nm). If the distance between the lower end of the light-shielding wall 24 and the surface of the metal layer 34 is smaller than 500 (nm), the light-shielding wall 24 needs to be formed deeper, which increases the manufacturing cost of the pixel array unit 10. It ends up.
  • the manufacturing cost of the pixel array portion 10 can be reduced. At the same time, the occurrence of color mixing can be suppressed.
  • the distance between the lower surface of the semiconductor layer 20 (that is, the interface with the wiring layer 30) and the surface of the metal layer 34 in the thickness direction is preferably in the range of 50 (nm) to 200 (nm). .. If the distance between the lower surface of the semiconductor layer 20 and the surface of the metal layer 34 is smaller than 50 (nm), the insulating property of the semiconductor layer 20 may deteriorate.
  • the distance between the lower surface of the semiconductor layer 20 and the surface of the metal layer 34 is in the range of 50 (nm) to 200 (nm)
  • the reliability of the pixel array unit 10 can be ensured.
  • the occurrence of color mixing can be suppressed.
  • the thickness of the metal layer 34 is preferably in the range of 50 (nm) to 200 (nm). If the thickness of the metal layer 34 is smaller than 50 (nm), it becomes difficult to effectively reflect the light L, so that the effect of suppressing color mixing is reduced.
  • the wiring layer 30 becomes thicker by that amount, which increases the manufacturing cost of the pixel array unit 10.
  • the thickness of the metal layer 34 is in the range of 50 (nm) to 200 (nm)
  • the manufacturing cost of the pixel array portion 10 can be reduced and the occurrence of color mixing can be suppressed. Can be done.
  • each pixel is provided with an on-chip lens, two adjacent pixels are provided with one on-chip lens, and the pixels are adjacent to each other in the matrix direction. Some are provided with one on-chip lens for each of the four pixels, and some are provided with one color filter for each of the four pixels adjacent to each other in the matrix direction.
  • one pixel is defined as one pixel, and the length of one side of one pixel in a plan view is defined as a cell size.
  • a square-shaped pixel in a plan view is divided into two divided pixels having a rectangular shape in a plan view having the same area and used, one pixel in a square shape in a plan view obtained by combining the two divided pixels is used.
  • the length of one side in the plan view of one pixel is defined as the cell size.
  • the solid-state image sensor 1 there is also a pixel array unit in which two types of pixels having different sizes are alternately arranged in two dimensions.
  • the pixel having the shortest distance between the opposite sides is defined as a fine pixel.
  • the cell size is preferably 2.2 ( ⁇ m) or less, and further preferably the cell size is 1.45 ( ⁇ m) or less.
  • FIG. 6 is a diagram showing the relationship between the cell size and the color mixing ratio in the pixel array portion of the reference example.
  • the color mixing ratio sharply increases when the cell size becomes 2.2 ( ⁇ m) or less. That is, in the pixel array portion of the reference example, when the cell size is miniaturized in the range of 2.2 ( ⁇ m) or less, the color mixing increases rapidly, so that it is very difficult to miniaturize.
  • the pixel array unit 10 can suppress the occurrence of color mixing as described above, even if the cell size is miniaturized to 2.2 ( ⁇ m) or less, there is no problem in practical use. Can be obtained.
  • the color mixing ratio increases more rapidly when the cell size becomes 1.45 ( ⁇ m) or less. That is, in the pixel array portion of the reference example, when the cell size is miniaturized in the range of 1.45 ( ⁇ m) or less, the color mixing increases more rapidly, which makes it more difficult to miniaturize.
  • the pixel array unit 10 can suppress the occurrence of color mixing as described above, even if the cell size is miniaturized to 1.45 ( ⁇ m) or less, there is no problem in practical use. Can be obtained.
  • FIG. 7 is a cross-sectional view schematically showing the structure of the pixel array unit 10 according to the first modification of the embodiment of the present disclosure.
  • the arrangement of the metal layer 34 is different from that of the embodiment. Specifically, in the example of FIG. 7, the metal layer 34 is not provided on the visible light pixels (R pixel 11R, G pixel 11G, and B pixel 11B), but is provided only on the IR pixel 11IR.
  • FIG. 8 is a cross-sectional view schematically showing the structure of the pixel array unit 10 according to the second modification of the embodiment of the present disclosure.
  • the arrangement of the metal layer 34 is different from that of the embodiment and the first modification.
  • the metal layer 34 is not provided on the IR pixel 11IR, but is provided only on the visible light pixels (R pixel 11R, G pixel 11G, and B pixel 11B). That is, in the second modification, the metal layer 34 is provided so as to face the photodiode PD of the visible light pixel on the side opposite to the light incident side.
  • FIG. 9 is a diagram for explaining the function of the metal layer 34 according to the second modification of the embodiment of the present disclosure.
  • FIG. 10 is a cross-sectional view schematically showing the structure of the pixel array unit 10 according to the third modification of the embodiment of the present disclosure.
  • a metal layer 34 is provided inside the semiconductor layer 20 so as to face the photodiode PD of the visible light pixel and the IR pixel 11IR on the side opposite to the light incident side. ..
  • FIG. 11 is a plan view showing an example of the configuration and arrangement of the metal layer 34 according to the embodiment of the present disclosure. As shown in FIG. 11, in one unit pixel 11, the metal layer 34 may be arranged as large as possible within a range that does not interfere with other components (for example, the pixel transistor 33).
  • the metal layer 34 according to the embodiment may be arranged so as not to overlap with the pixel transistor 33 in a plan view.
  • the metal layer 34 can be made thin, and the entire wiring layer 30 can be made thin, so that the manufacturing cost of the pixel array unit 10 can be reduced.
  • FIG. 12 is a plan view showing another example of the configuration and arrangement of the metal layer 34 according to the embodiment of the present disclosure.
  • the metal layer 34 may have a gap of 34 g in a plan view. As a result, optical interference due to variations in film thickness between the semiconductor layer 20 and the metal layer 34 can be suppressed.
  • the width of the gap 34 g provided in the metal layer 34 is, for example, a width of X or more calculated by the following formula (1) when the wavelength of light is ⁇ 1 (nm) and the refractive index of the interlayer insulating film 31 is n1. It is good to set it to.
  • X ⁇ 1 / n1 / 2 ...
  • the width X of the gap 34g provided in the metal layer 34 is set to 850 / (1.5) / 2 ⁇ 283 (nm) or more. good.
  • FIG. 13 is a cross-sectional view schematically showing the structure of the pixel array unit 10 according to the modified example 4 of the embodiment of the present disclosure.
  • the metal layer 34 has a riding portion 34r, and the riding top 34r may be arranged so as to ride on the side opposite to the light incident side of the pixel transistor 33.
  • FIG. 14 is a plan view showing an example of the configuration and arrangement of the metal layer 34 according to the modified example 4 of the embodiment of the present disclosure.
  • the area of the metal layer 34 in one unit pixel 11 can be maximized, so that the light L that has passed through the photodiode PD of the IR pixel 11IR becomes stray light Ls (see FIG. 5) in the adjacent unit pixel 11. Leakage can be further suppressed. Therefore, according to the modified example 4, the occurrence of color mixing can be further suppressed.
  • the light L before reaching the riding portion 34r of the metal layer 34 can be absorbed by the polysilicon of the pixel transistor 33. Therefore, according to the modified example 4, since the amount of the light L itself reaching the metal layer 34 can be reduced, it is possible to further suppress the leakage of the stray light Ls to the adjacent unit pixel 11.
  • the direction of the side of the portion of the pixel transistor 33 that is ridden on the riding top 34r is not parallel to the direction of the side of the riding top 34r.
  • FIG. 15 is a cross-sectional view schematically showing the structure of the pixel array unit 10 according to the modified example 5 of the embodiment of the present disclosure.
  • the metal layer 34 may be multi-layered.
  • the metal layer 34 of the modified example 5 has, for example, a three-layer structure having a metal layer 34a, a metal layer 34b, and a metal layer 34c in order from the light incident side.
  • the first metal layer 34a does not receive all the light L, but the light L is transmitted through the lower metal layers 34b and 34c so that the lower metal layers 34b and 34c receive the light L. Can be absorbed, interfered with and diffracted.
  • the metal layer 34a, the metal layer 34b, and the metal layer 34c may all be a solid film (a film having no gap 34 g (see FIG. 12)) or a film having a gap 34 g. There may be.
  • the first metal layer 34a is vertically striped
  • the second metal layer 34b is horizontally striped
  • the third metal layer 34c complements them. It may be in the shape of dots.
  • 16 to 18 are plan views showing an example of the metal layers 34a to 34c according to the modified example 5 of the embodiment of the present disclosure.
  • the width of the gap 34g provided in the metal layer 34a, the metal layer 34b, and the metal layer 34c may be equal to or larger than the width X obtained by the above formula (1).
  • the configurations of the metal layers 34a, 34b, and 34c are not limited to the examples of FIGS. 16 to 18.
  • the third metal layer 34c may be a solid film.
  • the first metal layer 34a has a horizontal stripe shape
  • the second metal layer 34b has a vertical stripe shape
  • the third metal layer 34c has a dot shape (or solid film) that complements them. May be good.
  • first metal layer 34a has an oblique stripe shape
  • second metal layer 34b has an oblique stripe shape in a direction orthogonal to the metal layer 34a
  • third metal layer 34c complements them. It may be dot-shaped (or solid film).
  • FIG. 19 is a cross-sectional view schematically showing the structure of the pixel array unit 10 according to the modified example 6 of the embodiment of the present disclosure. As shown in FIG. 19, in the pixel array portion 10 of the modification 6, the light-shielding wall 24 of the separation region 23 is provided so as to penetrate the semiconductor layer 20.
  • the light L reflected by the metal layer 34 can be further suppressed from leaking to the adjacent unit pixel 11, so that the occurrence of color mixing can be further suppressed.
  • FIG. 20 is a cross-sectional view schematically showing the structure of the pixel array unit 10 according to the modified example 7 of the embodiment of the present disclosure. As shown in FIG. 20, in the pixel array portion 10 of the modified example 7, the light-shielding wall 24 of the separation region 23 is provided so as to penetrate the semiconductor layer 20 and reach the metal layer 34 of the wiring layer 30.
  • the light L reflected by the metal layer 34 can be further suppressed from leaking to the adjacent unit pixel 11, so that the occurrence of color mixing can be further suppressed.
  • the light-shielding wall 24 and the metal layer 34 come into contact with each other via the metal oxide film 25, but the light-shielding wall 24 and the metal layer 34 do not pass through the metal oxide film 25. It may be in direct contact.
  • the metal layer 34 is also fixed at a predetermined potential, so that the metal layer 34 is prevented from being in a floating state. can. Therefore, according to the modified example 7, it is possible to suppress the occurrence of shading in which the sensitivity characteristic in the peripheral region of the imaging region is deteriorated.
  • FIG. 21 is a cross-sectional view schematically showing the structure of the pixel array unit 10 according to the modified example 8 of the embodiment of the present disclosure.
  • a transparent wall 26 made of a highly transparent material is provided in the separation region 23 instead of the light-shielding wall 24 made of a light-shielding material. Be done.
  • the metal layer 34 containing tungsten as a main component can reflect the light L to the photodiode PD of the IR pixel 11IR without diffusely reflecting the light L, the occurrence of color mixing can be sufficiently suppressed.
  • the transparent wall 26 of the modified example 8 is composed of, for example, an inorganic material such as silicon oxide, silicon nitrogen oxide, or silicon nitride, or a silica-based organic material.
  • FIG. 22 is a cross-sectional view schematically showing the structure of the pixel array unit 10 according to the modified example 9 of the embodiment of the present disclosure. As shown in FIG. 22, in the pixel array unit 10 of the modification 9, the convex portion 21a is provided on the surface of the visible light pixel on the light incident side in the semiconductor region 21.
  • the visible light pixel has a so-called moth-eye structure.
  • the shape of the moth-eye structure refers to, for example, the shape of a recess in the semiconductor region 21 on the light incident side, which is dug into an inverted pyramid shape.
  • the light L incident on the visible light pixel is confined in the photodiode PD of the incident visible light pixel to increase the optical path length, so that the sensitivity of the visible light pixel can be improved.
  • the moth-eye structure may be formed in the IR pixel 11IR.
  • This also makes it possible to improve the sensitivity of the IR pixel 11IR because the optical path length can be increased by confining the light L incident on the IR pixel 11IR in the photodiode PD of the incident IR pixel 11IR.
  • the direction of the light L becomes slanted, so that the occurrence of color mixing may increase.
  • the pixel array unit 10 since the occurrence of color mixing can be suppressed as described above, even if at least one of the visible light pixel and the IR pixel 11IR has a moth-eye structure, there is no practical problem. You can get no images. That is, according to the modification 9, the improvement of the sensitivity and the suppression of the color mixing can be achieved at the same time.
  • FIG. 23 is a cross-sectional view schematically showing the structure of the pixel array unit 10 according to the modified example 10 of the embodiment of the present disclosure.
  • the width of the light-shielding walls 45 adjacent to each other in the visible light pixel is narrower than the width of the light-shielding walls 45 adjacent to each other in the IR pixel 11IR.
  • visible light having a high focusing rate on the OCL44 can be sufficiently focused on the visible light pixel, and infrared light having a lower focusing rate on the OCL44 than the visible light is a photodiode of the visible light pixel. It is possible to suppress the incident on the PD.
  • the noise of the signal output from the photodiode PD of the visible light pixel can be reduced.
  • the modified example 10 by widening the width between the light-shielding walls 45 adjacent to each other in the IR pixel 11IR, more infrared light having a low focusing rate in the OCL 44 can be incident on the IR pixel 11IR. That is, in the modification 10, the intensity of the signal output from the IR pixel 11IR can be increased.
  • the quality of the signal output from the pixel array unit 10 can be improved.
  • FIG. 24 is a cross-sectional view schematically showing the structure of the pixel array portion 10A according to the modified example 11 of the embodiment of the present disclosure.
  • the pixel array unit 10A according to the modification 11 is a so-called surface-illuminated pixel array unit, and the light L is transmitted from the optical layer 40 to the photodiode PD of each unit pixel 11 via the wiring layer 30. Is incident.
  • the metal layer 34 is provided in the wiring layer 30 so as to cover the light incident side of the pixel transistor 33. As a result, it is possible to prevent infrared light from entering the photodiode PD of the adjacent unit pixel 11.
  • the occurrence of color mixing can be suppressed in the surface-illuminated pixel array unit 10A.
  • FIG. 25 is a cross-sectional view schematically showing the structure of the pixel array unit 10 according to the modified example 12 of the embodiment of the present disclosure. As shown in FIG. 25, in the pixel array portion 10 of the modified example 12, the light-shielding wall 24 of the separation region 23 is provided so as to penetrate the semiconductor layer 20.
  • a light-shielding portion 35 that penetrates from the tip end portion of the light-shielding wall 24 to the wiring 32 of the wiring layer 30 in the light incident direction is provided.
  • the light-shielding portion 35 has a light-shielding wall 35a and a metal oxide film 35b.
  • the light-shielding wall 35a is a wall-shaped film provided along the separation region 23 in a plan view and shields light incident from adjacent unit pixels 11.
  • the metal oxide film 35b is provided in the light-shielding portion 35 so as to cover the light-shielding wall 35a.
  • the light-shielding wall 35a is made of the same material as the light-shielding wall 24, and the metal oxide film 35b is made of the same material as the metal oxide film 25.
  • FIG. 26 is a cross-sectional view schematically showing the structure of the pixel array unit 10 according to the modified example 13 of the embodiment of the present disclosure. As shown in FIG. 26, in the pixel array portion 10 of the modification 13, the light-shielding wall 24 of the separation region 23 is provided so as to penetrate the semiconductor layer 20.
  • a pair of light-shielding portions 35 penetrating from a position adjacent to the tip end portion of the light-shielding wall 24 to the wiring 32 of the wiring layer 30 in the light incident direction are provided. That is, the pixel array portion 10 according to the modification 13 is configured so that the tip end portion of the light-shielding wall 24 is surrounded by a pair of light-shielding parts 35.
  • the light-shielding wall 24 does not necessarily have to be formed so as to penetrate the semiconductor layer 20.
  • FIG. 27 is a cross-sectional view schematically showing the structure of the pixel array unit 10 according to the modified example 14 of the embodiment of the present disclosure. As shown in FIG. 27, in the pixel array portion 10 of the modified example 14, the light-shielding wall 24 of the separation region 23 is provided so as to penetrate the semiconductor layer 20 and reach the metal layer 34 of the wiring layer 30.
  • a pair of light-shielding portions 35 penetrating in the light incident direction from a position different from the light-shielding wall 24 in the metal layer 34 to the wiring 32 of the wiring layer 30 is provided. That is, in the modified example 14, the light-shielding wall 24, the metal layer 34, and the light-shielding portion 35 are configured as a portion having an integrated light-shielding function.
  • FIG. 28 is a diagram showing an example of the spectral characteristics of the IR cut filter 41 according to the embodiment of the present disclosure.
  • the IR cut filter 41 has a spectral characteristic that the transmittance is 30 (%) or less in the wavelength range of 700 (nm) or more, and is particularly absorbed in the wavelength range near 850 (nm). It has a maximum wavelength.
  • the IR cut filter 41 is arranged on the light incident side surface of the semiconductor layer 20 in the visible light pixel, and the semiconductor layer 20 in the IR pixel 11IR It is not placed on the surface on the light incident side.
  • the color filter 43R that transmits red light is arranged in the R pixel 11R
  • the color filter 43G that transmits green light is arranged in the G pixel 11G.
  • a color filter 43B that transmits blue light is arranged in the B pixel 11B.
  • FIG. 29 is a diagram showing an example of the spectral characteristics of each unit pixel according to the embodiment of the present disclosure.
  • the spectral characteristics of the R pixel 11R, the G pixel 11G, and the B pixel 11B are in the infrared light region having a wavelength of about 750 (nm) to 850 (nm). It will take a low transmittance.
  • the IR cut filter 41 in the visible light pixel, the influence of infrared light incident on the visible light pixel can be reduced, so that the signal output from the photodiode PD of the visible light pixel can be reduced. Noise can be reduced.
  • the IR cut filter 41 is not provided on the IR pixel 11IR, as shown in FIG. 29, the spectral characteristics of the IR pixel 11IR are highly transmitted in the infrared light region. Maintain the rate.
  • the intensity of the signal output from the IR pixel 11IR can be increased.
  • the quality of the signal output from the pixel array unit 10 can be improved by providing the IR cut filter 41 only on the visible light pixels.
  • the flattening film 42 directly contacts the metal oxide film 25 of the semiconductor layer 20 in the IR pixel 11IR. doing.
  • the amount of light L transmitted through the surface of the metal oxide film 25 and incident on the photodiode PD of the IR pixel 11IR can be increased, so that the intensity of the signal output from the IR pixel 11IR is further increased. be able to.
  • the IR cut filter 41 is formed of an organic material to which a near-infrared absorbing dye is added as an organic coloring material.
  • a near-infrared absorbing dye for example, a pyrolopyrrole dye, a copper compound, a cyanine-based dye, a phthalocyanine-based compound, an imonium-based compound, a thiol complex-based compound, a transition metal oxide-based compound, and the like are used.
  • the near-infrared absorbing dye used in the IR cut filter 41 for example, a squarylium dye, a naphthalocyanine dye, a quaterylene dye, a dithiol metal complex dye, a croconium compound and the like are also used.
  • FIG. 30 is a diagram showing an example of a color material of the IR cut filter 41 according to the embodiment of the present disclosure.
  • R 1a and R 1b independently represent an alkyl group, an aryl group, or a heteroaryl group, respectively.
  • R 2 and R 3 each independently represent a hydrogen atom or a substituent, and at least one of them is an electron-withdrawing group.
  • R 2 and R 3 may be combined with each other to form a ring.
  • R 4 represents a hydrogen atom, an alkyl group, an aryl group, a heteroaryl group, a substituted boron, or a metal atom, even if it is covalently or coordinated with at least one of R 1a , R 1b , and R 3. good.
  • the spectral characteristics of the IR cut filter 41 are assumed to have an absorption maximum wavelength in a wavelength region near 850 (nm), but the transmittance is high in a wavelength region of 700 (nm) or more. It suffices if it is 30 (%) or less.
  • 31 to 34 are diagrams showing another example of the spectral characteristics of the IR cut filter 41 according to the embodiment of the present disclosure.
  • the spectral characteristics of the IR cut filter 41 may be such that the transmittance is 20 (%) in the wavelength range of 800 (nm) or more.
  • the spectral characteristics of the IR cut filter 41 may have an absorption maximum wavelength in a wavelength region near 950 (nm). Further, as shown in FIG. 33, the spectral characteristics of the IR cut filter 41 may be such that the transmittance is 20 (%) or less in the entire wavelength range of 750 (nm) or more.
  • the spectral characteristics of the IR cut filter 41 may be such that infrared light having a wavelength of 800 (nm) to 900 (nm) is transmitted in addition to visible light.
  • the IR cut filter 41 is an optical filter that selectively absorbs infrared light in a predetermined wavelength range in the visible light pixel. Can be. Further, the maximum absorption wavelength of the IR cut filter 41 can be appropriately determined depending on the application of the solid-state image sensor 1.
  • FIG. 35 is a cross-sectional view schematically showing the structure of the pixel array unit 10 according to the modified example 15 of the embodiment of the present disclosure.
  • the IR cut filter 41 and the color filter 43 are arranged so as to be interchanged. That is, in the modification 15, the color filter 43 is arranged on the surface of the semiconductor layer 20 on the light incident side of the visible light pixels (R pixel 11R, G pixel 11G, and B pixel 11B).
  • the flattening film 42 is provided to flatten the surface on which the IR cut filter 41 and the OCL 44 are formed and to avoid unevenness generated in the rotary coating process when forming the IR cut filter 41 and the OCL 44.
  • the IR cut filter 41 is arranged on the light incident side surface of the flattening film 42 in the visible light pixels (R pixel 11R, G pixel 11G and B pixel 11B).
  • This also makes it possible to improve the quality of the signal output from the pixel array unit 10 by providing the IR cut filter 41 only on the visible light pixels.
  • FIG. 36 is a cross-sectional view schematically showing the structure of the pixel array unit 10 according to the modified example 16 of the embodiment of the present disclosure. As shown in FIG. 36, in the pixel array portion 10 of the modified example 16, the flattening film 42 that flattens the surface after the IR cut filter 41 is formed is omitted.
  • the color filter 43 is arranged on the surface of the visible light pixel (R pixel 11R, G pixel 11G, and B pixel 11B) on the light incident side of the IR cut filter 41.
  • This also makes it possible to improve the quality of the signal output from the pixel array unit 10 by providing the IR cut filter 41 only on the visible light pixels.
  • FIG. 37 is a cross-sectional view schematically showing the structure of the pixel array unit 10 according to the modified example 17 of the embodiment of the present disclosure. As shown in FIG. 37, in the pixel array portion 10 of the modified example 17, the flattening film 42 that flattens the surface after the IR cut filter 41 is formed is omitted as in the modified example 16 described above. ..
  • the transparent material 46 is provided between the metal oxide film 25 of the semiconductor layer 20 and the OCL 44 in the IR pixel 11IR.
  • the transparent material 46 has at least an optical property of transmitting infrared light, and is formed in a photolithography step after the IR cut filter 41 is formed.
  • This also makes it possible to improve the quality of the signal output from the pixel array unit 10 by providing the IR cut filter 41 only on the visible light pixels.
  • FIG. 38 is a cross-sectional view schematically showing the structure of the pixel array unit 10 according to the modified example 18 of the embodiment of the present disclosure. As shown in FIG. 38, in the pixel array unit 10 of the modified example 18, the IR cut filter 41 has multiple layers (two layers in the figure).
  • the multilayer IR cut filter 41 can be formed by repeating, for example, a step of forming the one-layer IR cut filter 41 and a step of flattening the surface with the flattening film 42.
  • the flattening film 42 applied when forming the flattening film 42 may be uneven. be.
  • the IR cut filter 41 having a small film thickness is flattened by the flattening film 42, it is possible to suppress the occurrence of unevenness in the flattening film 42. Further, in the modification 18, the total film thickness of the IR cut filter 41 can be increased by forming the IR cut filter 41 in multiple layers.
  • the pixel array unit 10 can be formed with high accuracy, and the quality of the signal output from the pixel array unit 10 can be further improved.
  • FIG. 39 is a cross-sectional view schematically showing the structure of the pixel array unit 10 according to the modified example 19 of the embodiment of the present disclosure. As shown in FIG. 39, in the pixel array portion 10 of the modified example 19, the light-shielding wall 45 is provided so as to penetrate the IR cut filter 41.
  • the incident of light transmitted through the IR cut filter 41 and the flattening film 42 of the adjacent unit pixels 11 can be further suppressed, so that the occurrence of color mixing can be further suppressed.
  • FIG. 40 is a cross-sectional view schematically showing the structure of the pixel array unit 10 according to the modified example 20 of the embodiment of the present disclosure.
  • the optical wall 47 is provided on the light incident side of the light shielding wall 45.
  • the integrated light-shielding wall 45 and the optical wall 47 are provided so as to penetrate the IR cut filter 41.
  • the optical wall 47 is made of a material having a low refractive index (for example, n ⁇ 1.6), and is made of, for example, silicon oxide or an organic material having a low refractive index.
  • FIG. 41 is a cross-sectional view schematically showing the structure of the pixel array unit 10 according to the modified example 21 of the embodiment of the present disclosure. As shown in FIG. 41, in the pixel array portion 10 of the modification 21, an optical filter reflection layer 34A is provided in the wiring layer 30 instead of the metal layer 34.
  • the optical filter reflective layer 34A is composed of, for example, a multilayer film of a dielectric, and has a reflectance of a given value (for example, 80 (%) or more). Further, the optical filter reflection layer 34A is arranged in each unit pixel 11, and is provided on the light incident side of the wiring 32 of the plurality of layers.
  • the optical filter reflecting layer 34A having a higher reflectance than the metal layer 34 made of tungsten can be used, the light L reflected by the optical filter reflecting layer 34A is efficiently converted into the IR pixel 11IR. It can be returned well. Therefore, according to the modification 21, the sensitivity of the IR pixel 11IR can be improved.
  • FIG. 42 is a cross-sectional view schematically showing the structure of the pixel array unit 10 according to the modified example 22 of the embodiment of the present disclosure.
  • the optical filter reflection layer 34A is not individually arranged in the unit pixel 11, but is integrally provided in the entire pixel region R1 (see FIG. 65). Be done.
  • the optical filter reflection layer 34A is composed of a multilayer film of a dielectric, even if the optical filter reflection layer 34A and the pixel transistor 33 are in contact with each other as shown in FIG. 42, the adjacent pixel transistors 33 are in contact with each other. There is no risk of short circuit. That is, in the modified example 22, the optical filter reflection layer 34A can be arranged without a gap so as to be in contact with the pixel transistor 33.
  • the stray light Ls reflected by the wiring 32 can be further suppressed from leaking to the adjacent unit pixel 11, so that the occurrence of color mixing can be further suppressed.
  • the optical filter reflective layer 34A is formed of an insulating film, there is no risk of short circuit even if it is in contact with the contact electrode to the diffusion layer of the pixel transistor 33. Therefore, in the modified example 22, the wiring 32 can be arranged in the wiring layer 30 with a high degree of freedom.
  • FIG. 43 is a cross-sectional view schematically showing the structure of the pixel array unit 10 according to the modified example 23 of the embodiment of the present disclosure.
  • the optical filter reflection layer 34A is not provided on the visible light pixels (R pixel 11R, G pixel 11G and B pixel 11B), but only on the IR pixel 11IR. It will be provided.
  • FIG. 44 is a cross-sectional view schematically showing the structure of the pixel array unit 10 according to the modified example 24 of the embodiment of the present disclosure.
  • the wiring layer 30 is provided with an optical filter reflection layer 34B that selectively reflects only a specific wavelength region.
  • the optical filter reflection layer 34B that selectively reflects only the red wavelength region is provided only on the R pixel 11R.
  • the optical filter reflection layer 34B that selectively reflects only the red wavelength region only on the R pixel 11R, the infrared light transmitted through the color filter 43R is reflected by the optical filter reflection layer 34B. Only red light can be reflected without causing it.
  • FIG. 45 is a cross-sectional view schematically showing the structure of the pixel array unit 10 according to the modified example 25 of the embodiment of the present disclosure.
  • the on-chip lens 36 is provided in the wiring layer 30 on the light incident side of the metal layer 34.
  • the on-chip lens 36 is a lens that concentrates light L on the metal layer 34 of each unit pixel 11.
  • the reflected light from the metal layer 34 can be reflected to the central region of the photodiode PD located directly above. That is, in the modified example 25, since the reflected light from the metal layer 34 can be suppressed from leaking to the adjacent unit pixel 11, the occurrence of color mixing can be suppressed. Further, the light-collecting effect of the on-chip lens 36 makes it possible to reduce the size of the metal layer 34.
  • the metal layer 34 is arranged in the vicinity of the on-chip lens 36
  • the present disclosure is not limited to such an example, and for example, the optical filter reflection layer 34A is shown in the vicinity of the on-chip lens 36.
  • 34B may be arranged.
  • the present disclosure is not limited to such an example, and for example, the wiring 32 is not arranged directly under the on-chip lens 36. It may be configured. As a result, since the light is focused by the on-chip lens 36, it is possible to suppress the reflection of the light by the wiring 32, so that the occurrence of color mixing can be suppressed.
  • FIG. 46 is a cross-sectional view schematically showing the structure of the pixel array unit 10 according to the modified example 26 of the embodiment of the present disclosure.
  • the metal lens 36A is provided in the wiring layer 30 on the light incident side of the metal layer 34.
  • the meta lens 36A is a flat lens having a meta surface, and is a lens that concentrates light L on the metal layer 34 of each unit pixel 11.
  • the reflected light from the metal layer 34 can be reflected to the central region of the photodiode PD located directly above. That is, in the modified example 26, since the reflected light from the metal layer 34 can be suppressed from leaking to the adjacent unit pixel 11, the occurrence of color mixing can be suppressed.
  • the metal layer 34 is arranged in the vicinity of the metal lens 36A, but the present disclosure is not limited to such an example.
  • the optical filter reflection layers 34A and 34B are arranged in the vicinity of the metal lens 36A. May be done.
  • FIG. 46 an example in which the metal layer 34 is arranged directly under the metal lens 36A is shown, but the present disclosure is not limited to such an example, and for example, a configuration in which the wiring 32 is not arranged directly under the metal lens 36A may be used.
  • the present disclosure is not limited to such an example, and for example, a configuration in which the wiring 32 is not arranged directly under the metal lens 36A may be used.
  • FIG. 47 is a cross-sectional view schematically showing the structure of the pixel array unit 10 according to the modified example 27 of the embodiment of the present disclosure. As shown in FIG. 47, in the pixel array portion 10 of the modified example 27, the metal layer 34 is provided only on the IR pixel 11IR, and the configuration of the metal layer 34 is different from that of the above-described embodiment.
  • the metal layer 34 of the modified example 27 has a plurality of protrusions 34d and a side wall 34e.
  • the plurality of protrusions 34d are arranged on the surface of the metal layer 34 on the light incident side. Due to the plurality of protrusions 34d, the metal layer 34 of the modified example 27 has a rough surface on the light incident side.
  • the side wall portion 34e is a wall-shaped portion of the metal layer 34 that protrudes from the peripheral edge of the surface on the light incident side toward the light incident side.
  • the side wall portion 34e is arranged so as to face the light-shielding wall 24 surrounding the IR pixel 11IR.
  • the optical path length of the light reflected on the surface on the light incident side can be extended.
  • the saturated charge amount Qs of the diode PD can be increased.
  • the distance between the metal layer 34 and the photodiode PD can be made not uniform by arranging the plurality of protrusions 34d on the surface of the metal layer 34 on the light incident side. .. Therefore, according to the modified example 27, it is possible to improve the robustness of the color mixing rate variation between adjacent unit pixels 11.
  • the modified example 27 by arranging the side wall portion 34e on the surface of the metal layer 34 on the light incident side, it is possible to prevent the light reflected by the metal layer 34 from leaking to the adjacent unit pixel 11, and thus the colors are mixed. Can be suppressed.
  • the side wall portion 34e is arranged on the surface of the metal layer 34 on the light incident side, the light reflected by the metal layer 34 can be returned to the photodiode PD directly above the photodiode PD.
  • the saturated charge amount Qs of can be increased.
  • FIG. 48 to 54 are plan views schematically showing an example of the arrangement of the protrusions 34d according to the modified example 27 of the embodiment of the present disclosure.
  • four protrusions 34d may be arranged side by side in two rows and two columns in a plan view.
  • nine protrusions 34d may be arranged side by side in 3 rows and 3 columns on the metal layer 34 according to the modified example 27 in a plan view.
  • 16 protrusions 34d may be arranged side by side in 4 rows and 4 columns on the metal layer 34 according to the modified example 27 in a plan view.
  • 25 protrusions 34d may be arranged side by side in 5 rows and 5 columns on the metal layer 34 according to the modified example 27 in a plan view.
  • four protrusions 34d may be arranged in a diamond shape in 2 rows and 2 columns in a plan view.
  • nine protrusions 34d may be arranged in a diamond shape in 3 rows and 3 columns in a plan view.
  • 16 protrusions 34d may be arranged in a diamond shape in 4 rows and 4 columns in a plan view.
  • FIG. 55 is a cross-sectional view schematically showing the structure of the pixel array unit 10 according to the modified example 28 of the embodiment of the present disclosure.
  • the metal layer 34 has the same configuration as the above-described modified example 27, and the light-shielding wall 24 of the separation region 23 penetrates the semiconductor layer 20. It will be provided.
  • the light L reflected by the metal layer 34 can be further suppressed from leaking to the adjacent unit pixel 11, so that the occurrence of color mixing can be further suppressed.
  • FIG. 56 is a cross-sectional view schematically showing the structure of the pixel array unit 10 according to the modified example 29 of the embodiment of the present disclosure.
  • the metal layer 34 has the same configuration as the above-described modified example 27, and a high reflectance film 37 is provided around the metal layer 34.
  • the high reflectance film 37 is made of a material having a higher reflectance (for example, gold or platinum) than the metal layer 34 whose main component is tungsten.
  • the high reflectance film 37 is arranged so as to cover the surface on the light incident side of the metal layer 34 on which the protrusion 34d is arranged, the side wall portion 34e, and the like.
  • FIGS. 57 to 61 are diagrams for explaining an example of the manufacturing process of the metal layer 34 according to the modified example 29 of the embodiment of the present disclosure.
  • the interlayer insulating film 31 and the mask M1 are formed on the surface of the semiconductor layer 20.
  • a predetermined opening A1 is formed in the mask M1, and the mask M1 is dug from above the mask M1 by anisotropic etching such as RIE (Reactive Ion Eching).
  • a trench T1 is formed in the insulating film 31.
  • a high reflectance film 37 is formed on the surfaces of the semiconductor layer 20 and the interlayer insulating film 31 by a known method. Then, the high reflectance film 37 formed on the surface of the interlayer insulating film 31 is polished by a method such as CMP (Chemical Mechanical Polishing), and as shown in FIG. 58, the high reflectance is applied to the inner wall surface of the trench T1. The film 37 is formed.
  • CMP Chemical Mechanical Polishing
  • the metal layer 34 is formed on the surfaces of the semiconductor layer 20 and the interlayer insulating film 31 by a known method. Then, as shown in FIG. 59, the side wall portion 34e is formed inside the trench T1 by polishing the metal layer 34 formed on the surface of the interlayer insulating film 31 by a method such as CMP (Chemical Mechanical Polishing). NS.
  • CMP Chemical Mechanical Polishing
  • a mask M2 having a predetermined opening A2 is formed, and by digging from above the mask M2 by isotropic etching, a hemispherical recess E1 is formed in the interlayer insulating film 31 as shown in FIG. Will be done.
  • the high reflectance film 37 and the metal layer 34 are formed on the surface of the interlayer insulating film 31, so that the metal having the protrusion 34d and the side wall 34e is formed as shown in FIG. Layer 34 is formed.
  • FIG. 62 to 64 are diagrams for explaining another example of the manufacturing process of the metal layer 34 according to the modified example 29 of the embodiment of the present disclosure.
  • the steps up to FIG. 59 are the same as those in the above example, the description thereof will be omitted.
  • a mask M3 containing bubbles B is formed on the surface of the interlayer insulating film 31.
  • Such mask M3 is, for example, a sparse oxide film.
  • the mask M3 is removed by full etch back.
  • the unevenness P caused by the bubble B is formed on the surface of the interlayer insulating film 31.
  • the metal layer 34 having the protrusion 34d and the side wall 34e is formed as shown in FIG. 64.
  • FIG. 65 is a cross-sectional view schematically showing the peripheral structure of the solid-state image sensor 1 according to the embodiment of the present disclosure, and mainly shows the cross-sectional structure of the peripheral portion of the solid-state image sensor 1.
  • the solid-state imaging device 1 has a pixel region R1, a peripheral region R2, and a pad region R3.
  • the pixel area R1 is an area in which the unit pixel 11 is provided.
  • a plurality of unit pixels 11 are arranged in a two-dimensional grid pattern.
  • the peripheral region R2 is an region provided so as to surround all four sides of the pixel region R1.
  • FIG. 66 is a diagram showing a planar configuration of the solid-state image sensor 1 according to the embodiment of the present disclosure.
  • a light-shielding layer 48 is provided in the peripheral region R2.
  • the light-shielding layer 48 is a film that shields light obliquely incident from the peripheral region R2 toward the pixel region R1.
  • the light-shielding layer 48 By providing the light-shielding layer 48, it is possible to suppress the incident light L from the peripheral region R2 to the unit pixel 11 of the pixel region R1, so that the occurrence of color mixing can be suppressed.
  • the light-shielding layer 48 is made of, for example, aluminum or tungsten.
  • the pad area R3 is an area provided around the peripheral area R2. Further, the pad region R3 has a contact hole H as shown in FIG. 65. A bonding pad (not shown) is provided at the bottom of the contact hole H.
  • the pixel array portion 10 and each portion of the solid-state image sensor 1 are electrically connected.
  • the IR cut filter 41 may be formed not only in the pixel area R1 but also in the peripheral area R2 and the pad area R3.
  • the incident of infrared light from the peripheral region R2 and the pad region R3 to the unit pixel 11 of the pixel region R1 can be further suppressed. Therefore, according to the embodiment, the occurrence of color mixing can be further suppressed.
  • the solid-state image sensor 1 can be formed with high accuracy.
  • a light receiving pixel for phase difference detection (hereinafter, also referred to as a phase difference pixel) is added to the pixel array unit 10 according to the embodiment, and the retardation pixel is provided with a metal layer 34 containing tungsten as a main component. You may.
  • the color mixing that occurs in the phase difference pixels due to the IR pixel 11IR can be suppressed, so that the autofocus performance of the solid-state image sensor 1 can be improved.
  • a light receiving pixel for distance measurement using the ToF (Time of Flight) format (hereinafter, also referred to as a distance measuring pixel) is added to the pixel array unit 10 according to the embodiment, and tungsten is mainly used for the distance measuring pixel.
  • a metal layer 34 as a component may be provided.
  • the solid-state image sensor 1 includes a first light receiving pixel (R pixel 11R, G pixel 11G, B pixel 11B), a second light receiving pixel (IR pixel 11IR), and a metal layer 34.
  • the first light receiving pixel (R pixel 11R, G pixel 11G, B pixel 11B) receives visible light.
  • the second light receiving pixel (IR pixel 11IR) receives infrared light.
  • the metal layer 34 faces at least one of the photoelectric conversion part (photodiode PD) of the first light receiving pixel and the photoelectric conversion part (photodiode PD) of the second light receiving pixel on the side opposite to the light incident side.
  • the main component is tungsten.
  • the metal layer 34 is provided so as to face the photoelectric conversion unit (photodiode PD) of the second light receiving pixel (IR pixel 11IR).
  • the metal layer 34 is provided so as to face the photoelectric conversion unit (photodiode PD) of the first light receiving pixel (R pixel 11R, G pixel 11G, B pixel 11B). ..
  • the metal layer 34 is a multilayer (metal layers 34a, 34b, 34c).
  • the metal layer 34 has a gap of 34 g in a plan view.
  • the solid-state image sensor 1 includes a semiconductor layer 20 and a wiring layer 30.
  • the semiconductor layer 20 includes a photoelectric conversion unit (photodiode PD) of the first light receiving pixel (R pixel 11R, G pixel 11G, B pixel 11B) and a photoelectric conversion unit (photodiode) of the second light receiving pixel (IR pixel 11IR). PD) is provided.
  • the wiring layer 30 is provided on the surface of the semiconductor layer 20 opposite to the light incident side, and has a plurality of layers of wiring 32. Further, the metal layer 34 is provided in the wiring layer 30 on the light incident side of the wiring 32 having a plurality of layers.
  • the wiring layer 30 is a photoelectric conversion unit of the first light receiving pixel (R pixel 11R, G pixel 11G, B pixel 11B) and the second light receiving pixel (IR pixel 11IR). It has a plurality of pixel transistors 33 connected to each of the photoelectric conversion units of the above. Further, the metal layer 34 is arranged so as not to overlap with the pixel transistor 33 in a plan view.
  • the manufacturing cost of the pixel array unit 10 can be reduced.
  • the wiring layer 30 is a photoelectric conversion unit of the first light receiving pixel (R pixel 11R, G pixel 11G, B pixel 11B) and the second light receiving pixel (IR pixel 11IR). It has a plurality of pixel transistors 33 connected to each of the photoelectric conversion units of the above. Further, the metal layer 34 is arranged so as to ride on the side of the pixel transistor 33 opposite to the light incident side.
  • the wiring layer 30 has a lens (on-chip lens 36, metal lens 36A) provided on the light incident side of the metal layer 34.
  • the metal layer 34 projects from the plurality of protrusions 34d arranged on the surface on the light incident side and the peripheral edge of the surface on the light incident side toward the light incident side. It has a wall-shaped side wall portion 34e.
  • the occurrence of color mixing caused by the IR pixel 11IR can be suppressed, and the saturated charge amount Qs of the photodiode PD can be increased.
  • the wiring layer 30 has a high reflectance film 37 arranged so as to cover the surface of the metal layer 34 on the light incident side.
  • the saturated charge amount Qs of the photodiode PD can be further increased.
  • the solid-state image sensor 1 includes a semiconductor layer 20 and a wiring layer 30.
  • the semiconductor layer 20 includes a photoelectric conversion unit (photodiode PD) of the first light receiving pixel (R pixel 11R, G pixel 11G, B pixel 11B) and a photoelectric conversion unit (photodiode) of the second light receiving pixel (IR pixel 11IR). PD) is provided.
  • the wiring layer 30 is provided on the surface of the semiconductor layer 20 opposite to the light incident side, and has a plurality of layers of wiring 32. Further, the metal layer 34 is provided on the semiconductor layer 20.
  • the metal layer 34 is connected to the ground potential.
  • the pixel array unit 10 can be stably manufactured.
  • the solid-state image sensor 1 includes a first light receiving pixel (R pixel 11R, G pixel 11G, B pixel 11B), a second light receiving pixel (IR pixel 11IR), and an optical filter reflection layer 34A (). 34B) and.
  • the first light receiving pixel (R pixel 11R, G pixel 11G, B pixel 11B) receives visible light.
  • the second light receiving pixel (IR pixel 11IR) receives infrared light.
  • the optical filter reflection layer 34A (34B) is on the light incident side with respect to at least one of the photoelectric conversion unit (photodiode PD) of the first light receiving pixel and the photoelectric conversion unit (photodiode PD) of the second light receiving pixel. They are provided facing each other on the opposite side and have a reflectance greater than or equal to a given value.
  • the optical filter reflection layer 34A (34B) is provided in the entire pixel region R1.
  • the present disclosure is not limited to application to a solid-state image sensor. That is, the present disclosure refers to all electronic devices having a solid-state image sensor, such as a camera module, an image pickup device, a portable terminal device having an image pickup function, or a copier using a solid-state image sensor for an image reading unit, in addition to the solid-state image sensor. Is applicable.
  • Examples of such an imaging device include a digital still camera and a video camera. Further, examples of the mobile terminal device having such an imaging function include a smartphone and a tablet type terminal.
  • FIG. 67 is a block diagram showing a configuration example of an image pickup apparatus as an electronic device 100 to which the technique according to the present disclosure is applied.
  • the electronic device 100 of FIG. 67 is, for example, an electronic device such as an imaging device such as a digital still camera or a video camera, or a mobile terminal device such as a smartphone or a tablet terminal.
  • the electronic device 100 includes a lens group 101, a solid-state image sensor 102, a DSP circuit 103, a frame memory 104, a display unit 105, a recording unit 106, an operation unit 107, and a power supply unit 108. It is composed.
  • the DSP circuit 103, the frame memory 104, the display unit 105, the recording unit 106, the operation unit 107, and the power supply unit 108 are connected to each other via the bus line 109.
  • the lens group 101 captures incident light (image light) from the subject and forms an image on the image pickup surface of the solid-state image pickup device 102.
  • the solid-state image sensor 102 corresponds to the solid-state image sensor 1 according to the above-described embodiment, and converts the amount of incident light imaged on the image pickup surface by the lens group 101 into an electric signal in pixel units and outputs it as a pixel signal. do.
  • the DSP circuit 103 is a camera signal processing circuit that processes a signal supplied from the solid-state image sensor 102.
  • the frame memory 104 temporarily holds the image data processed by the DSP circuit 103 in frame units.
  • the display unit 105 is composed of a panel-type display device such as a liquid crystal panel or an organic EL (Electro Luminescence) panel, and displays a moving image or a still image captured by the solid-state image sensor 102.
  • the recording unit 106 records image data of a moving image or a still image captured by the solid-state image sensor 102 on a recording medium such as a semiconductor memory or a hard disk.
  • the operation unit 107 issues operation commands for various functions of the electronic device 100 according to the operation by the user.
  • the power supply unit 108 appropriately supplies various power sources that serve as operating power sources for the DSP circuit 103, the frame memory 104, the display unit 105, the recording unit 106, and the operation unit 107 to these supply targets.
  • the solid-state image sensor 1 of each of the above-described embodiments as the solid-state image sensor 102, it is possible to suppress the occurrence of color mixing caused by the IR pixel 11IR.
  • the present technology can also have the following configurations.
  • the wiring layer has a plurality of pixel transistors connected to the photoelectric conversion unit of the first light receiving pixel and the photoelectric conversion unit of the second light receiving pixel, respectively.
  • the wiring layer has a plurality of pixel transistors connected to the photoelectric conversion unit of the first light receiving pixel and the photoelectric conversion unit of the second light receiving pixel, respectively.
  • the solid-state imaging device according to (6) above, wherein the wiring layer has a lens provided on the light incident side of the metal layer.
  • the metal layer has a plurality of protrusions arranged on the surface on the light incident side and a wall-shaped side wall portion protruding from the peripheral edge of the surface on the light incident side toward the light incident side in (6).
  • the solid-state image sensor according to the description.
  • (11) The solid-state imaging device according to (10), wherein the wiring layer has a high reflectance film arranged so as to cover a surface of the metal layer on the light incident side.
  • a semiconductor layer provided with a photoelectric conversion unit of the first light receiving pixel and a photoelectric conversion unit of the second light receiving pixel, and A wiring layer provided on the surface of the semiconductor layer opposite to the light incident side and having a plurality of layers of wiring, and With The solid-state image sensor according to any one of (1) to (5), wherein the metal layer is provided on the semiconductor layer. (13) The solid-state imaging device according to any one of (1) to (12) above, wherein the metal layer is connected to a ground potential.
  • a solid-state image sensor With an optical filter reflective layer, A solid-state image sensor.
  • a signal processing circuit that processes the output signal from the solid-state image sensor is provided.
  • the solid-state image sensor The first light receiving pixel that receives visible light and A second light receiving pixel that receives infrared light, and A metal layer having tungsten as a main component, which is provided so as to face at least one of the photoelectric conversion part of the first light receiving pixel and the photoelectric conversion part of the second light receiving pixel on the side opposite to the light incident side.
  • With electronic devices 17.
  • the metal layer is provided so as to face the photoelectric conversion portion of the first light receiving pixel.
  • the metal layer has a gap in a plan view.
  • the wiring layer has a plurality of pixel transistors connected to the photoelectric conversion unit of the first light receiving pixel and the photoelectric conversion unit of the second light receiving pixel, respectively.
  • the wiring layer has a plurality of pixel transistors connected to the photoelectric conversion unit of the first light receiving pixel and the photoelectric conversion unit of the second light receiving pixel, respectively.
  • the electronic device according to (21), wherein the metal layer is arranged so as to ride on a side of the pixel transistor opposite to the light incident side.
  • the electronic device according to (21), wherein the wiring layer has a lens provided on the light incident side of the metal layer.
  • the metal layer has a plurality of protrusions arranged on the surface on the light incident side and a wall-shaped side wall portion protruding from the peripheral edge of the surface on the light incident side toward the light incident side in the above (21). Described electronic devices.
  • a semiconductor layer provided with a photoelectric conversion unit of the first light receiving pixel and a photoelectric conversion unit of the second light receiving pixel, and A wiring layer provided on the surface of the semiconductor layer opposite to the light incident side and having a plurality of layers of wiring, and With The electronic device according to any one of (16) to (21), wherein the metal layer is provided on the semiconductor layer. (28) The electronic device according to any one of (16) to (27), wherein the metal layer is connected to a ground potential.
  • an optical filter reflective layer Electronic equipment equipped with.
  • Solid-state image sensor 10 10A Pixel array unit 11 Unit pixel 11RR pixel (example of first light receiving pixel) 11GG pixel (an example of the first light receiving pixel) 11BB pixel (an example of the first light receiving pixel) 11 IR IR pixel (an example of the second light receiving pixel) 20 Semiconductor layer 30 Wiring layer 32 Wiring 33 Pixel transistors 34, 34a to 34c Metal layers 34A, 34B Optical filter Reflective layer 34d Protrusion 34e Side wall 34g Gap 34r Riding top 36 On-chip lens (example of lens) 36A metal lens (example of lens) 37 High reflectance film 100 Electronic device PD photodiode (example of photoelectric conversion unit)

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