EP4069459A1 - Procédé de jonction d'au moins une première et une seconde zone de jonction, joint ainsi que composant électronique et ensemble circuit - Google Patents

Procédé de jonction d'au moins une première et une seconde zone de jonction, joint ainsi que composant électronique et ensemble circuit

Info

Publication number
EP4069459A1
EP4069459A1 EP20817267.6A EP20817267A EP4069459A1 EP 4069459 A1 EP4069459 A1 EP 4069459A1 EP 20817267 A EP20817267 A EP 20817267A EP 4069459 A1 EP4069459 A1 EP 4069459A1
Authority
EP
European Patent Office
Prior art keywords
joining
layer
titanium
joining area
electronic component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP20817267.6A
Other languages
German (de)
English (en)
Inventor
Thomas Stieglitz
Michael Langenmair
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Albert Ludwigs Universitaet Freiburg
Original Assignee
Albert Ludwigs Universitaet Freiburg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Albert Ludwigs Universitaet Freiburg filed Critical Albert Ludwigs Universitaet Freiburg
Publication of EP4069459A1 publication Critical patent/EP4069459A1/fr
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/19—Soldering, e.g. brazing, or unsoldering taking account of the properties of the materials to be soldered
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/041—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction having no base used as a mounting for the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H01L23/055—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads having a passage through the base
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/11—Printed elements for providing electric connections to or between printed circuits
    • H05K1/111—Pads for surface mounting, e.g. lay-out
    • H05K1/112—Pads for surface mounting, e.g. lay-out directly combined with via connections
    • H05K1/113—Via provided in pad; Pad over filled via
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/14—Structural association of two or more printed circuits
    • H05K1/141—One or more single auxiliary printed circuits mounted on a main printed circuit, e.g. modules, adapters
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/24—Reinforcing the conductive pattern
    • H05K3/244—Finish plating of conductors, especially of copper conductors, e.g. for pads or lands
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/24—Reinforcing the conductive pattern
    • H05K3/245—Reinforcing conductive patterns made by printing techniques or by other techniques for applying conductive pastes, inks or powders; Reinforcing other conductive patterns by such techniques
    • H05K3/247—Finish coating of conductors by using conductive pastes, inks or powders
    • H05K3/248—Finish coating of conductors by using conductive pastes, inks or powders fired compositions for inorganic substrates
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341—Surface mounted components
    • H05K3/3431—Leadless components
    • H05K3/3442—Leadless components having edge contacts, e.g. leadless chip capacitors, chip carriers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/14—Structural association of two or more printed circuits
    • H05K1/144—Stacked arrangements of planar printed circuit boards
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
    • H05K3/16—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation by cathodic sputtering
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3494—Heating methods for reflowing of solder
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/36—Assembling printed circuits with other printed circuits
    • H05K3/368—Assembling printed circuits with other printed circuits parallel to each other
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a method for joining at least a first and a second joining area, a corresponding joining connection and an electronic component with at least one such joining connection.
  • the invention also relates to a circuit arrangement with an encapsulated electronic component.
  • AIMD active implantable medical devices
  • Titanium and the alloys used are highly inert materials, such as in the article A. Muhrat, H. Puga, and J. Barbosa, “Low-Temperature Brazing of Titanium Using Al-Based Filler Alloys,” Advances in Materials Science and Engineering , vol. 2018, no. 2, pp. 1-16, 2018.
  • alloys are generally either designated in such a way that the element symbols are written one after the other in the order of their weight proportion in the alloy. A number is usually written after each symbol (usually except for the main component) that corresponds to the weight percent with which the respective component is involved.
  • this percentage by weight can also be given in front of the respective component, the individual components being separated by dividing lines.
  • the specification Ti AI6 V4 or Ti-6AI-4V therefore designates an alloy with 90 percent by weight of titanium, 6 percent by weight of aluminum and 4 percent by weight of vanadium.
  • Titanium and titanium alloys are often used as hermetic housings for electrical systems in medical technology, for example. These active implantable medical devices such. B. Pacemakers have to bring electrical signals from inside the titanium housing into the body. This is only possible if the individual electrical channels are separated from each other and from the (electrically conductive) titanium casing by an electrically insulating material. solution are separated. For this purpose, electrically insulating materials must be let into the titanium housing and hermetically sealed.
  • FIG. 8 schematically shows a section from a known implantable housing 800.
  • the housing 800 has a first housing element 802 and a second housing element 804.
  • the first housing element 802 is made of titanium or a titanium alloy and forms a hollow body in which, for. B. the electronic components of a pacemaker's rule are included (not shown in the figures).
  • the second housing element 804 is typically made of ceramic.
  • a plurality of connecting lines 806 must be passed through the housing 800 who the, so that, for. B. Electrodes can lead excitation signals to the outside or measurement signals to the electronic components can be sent to the inside.
  • line bushings 808 are provided in the second housing element 804.
  • the housing 800 must hermetically encapsulate the electronic components located inside. Therefore, both the connection area between the first and the second housing element 802, 804 and between the line bushings 808 and the connecting lines 806 must be hermetically sealed.
  • titanium As is known (see, for example, BE Gemelli and NHA Camargo, Oxidation kinetics of commercially pure titanium, ”Biomaterials, vol. 12, no. 3, pp. 525-531, 2007), titanium always has a native oxide layer a few nm. At high temperatures this oxide diffuses into the base material and thereby weakens the base material (see again the dissertation Ho-Rim Lee, “Comparative Study of Bond Characteristics between Titanium / Titanium Alloy and Ceramic,” Inaugural dissertation, Medical Faculty, Eberhard-Karls- University, Tübingen, 2004).
  • the metal pastes usually used which are used for joining in a heterogeneous composite (e.g. when joining the base material titanium to an aluminum oxide ceramic as a joining partner), are around a hundred times more expensive than the tin compounds used according to the invention.
  • the metal pastes used in known arrangements for joining in a heterogeneous composite also place very high demands on the design of the joining points. Gap dimensions, filling quantity, temperature curves during firing and the compensation of thermal stresses have to be taken into account in a complex manner.
  • the present invention is based on the idea of forming a soft solder connection in which one of the joining partners is a surface made of titanium or a titanium alloy, a tungsten-titanium alloy or pure titanium as an adhesion promoter between the titanium or titanium alloy substrate and the Use soft solder.
  • one of the joining partners is a surface made of titanium or a titanium alloy, a tungsten-titanium alloy or pure titanium as an adhesion promoter between the titanium or titanium alloy substrate and the Use soft solder.
  • a titanium content of between 15 percent by weight and 5 percent by weight, preferably 10 percent by weight, is added to the tungsten main component.
  • a method for joining at least a first and a second joining area comprises the following steps:
  • an adhesion promoter layer in the first joining area at least partially having a metallic surface and where the adhesion promoter layer comprises a tungsten-titanium layer or a pure titanium layer,
  • the second joining area at least partially having a metallic surface
  • a soft solder connection is understood to mean a soldered connection that can be produced at temperatures below 450 ° C.
  • Soft solders can, for. B. lead-free solders such as Sn Ag4, Sn Cu3 or Be Sn Ag10. Furthermore, lead-containing soft solders such. B. Sn Pb40, Sn Pb38Cu2, Sn Pb50 or Pb Sn40 can be used.
  • a tin solder with 4 percent by weight silver (Sn Ag4) which has a melting range of approx. 221 ° C, is already approved for use in medical products. But it can also all other low-melting solder alloys conditions such.
  • a metallic wetting layer is applied to the adhesion promoter layer before the soldering step is carried out.
  • a wetting layer improves the wetting of the surface to which the soft solder is applied.
  • the wetting layer advantageously contains platinum, nickel, palladium, gold, silver, copper and / or tin, preferably platinum is used.
  • the adhesion promoter layer is vapor-deposited by means of physical vapor deposition (PVD), in particular in a sputtering process.
  • PVD physical vapor deposition
  • the starting material (target) is sputtered by ion bombardment and converted into the gas phase.
  • the layer is then deposited on the substrate to be coated from the gas phase.
  • the adhesion promoter layer preferably has a tungsten-titanium layer, in particular a W Ti10 alloy, or pure titanium.
  • a target made of such a W Ti10 alloy or pure titanium is sputtered and the corresponding adhesion promoter layer is deposited on the titanium or the titanium alloy of the base material of the first joint.
  • Other alloy ratios with between 15 and 5 percent by weight of titanium in tungsten are of course also possible.
  • a ceramic is used as the second joining partner, the same tungsten-titanium layer or pure titanium layer does not necessarily have to be used as the bonding layer; all metallizations customary for soldering on ceramic can be used.
  • the wetting layer is preferably also applied in a sputtering process.
  • the soldering step is advantageously carried out at a temperature of less than 450.degree. As already mentioned, many soft solders can be melted at temperatures below 250 ° C.
  • the present invention also relates to a joint between a first component and a second component, the joint having a first joint area and a second joint area, the first joint area at least partially having a metallic surface and an adhesion promoter layer deposited thereon, the adhesion promoter layer comprises a tungsten-titanium alloy layer or pure titanium, wherein the second joining area at least partially has a metallic surface, and wherein the first and the second joining area are connected to one another by a soft solder connection.
  • the advantageous properties of the adhesion promoter layer according to the invention come into play in particular when the metallic surface of the first joining area has titanium and / or a titanium alloy.
  • the joint connection advantageously comprises a metallic wetting layer which is arranged between the adhesion promoter layer and the soft solder connection.
  • the present invention further relates to an electronic component with at least one electronic component, a first housing element in which the at least one electronic component is at least partially accommodated, and at least one second housing element, the first housing element and the at least one second housing element are connected to one another via a joining connection according to the present invention in order to hermetically encapsulate the at least one electronic component, the first joining area being arranged on the first housing element and the second joining area being arranged on the second housing element.
  • the first housing element has a hollow body which is at least partially made of titanium and / or a titanium alloy, as shown, for. B. is required in active medical implants such as pacemakers to encapsulate the electronic components.
  • the at least one second housing element can be made at least partially from an electrically insulating material, preferably from a ceramic material.
  • Ceramic materials also have the advantage that they are inert, long-term stable and biocompatible. Soft solderable metallizations can easily be applied to ceramic materials.
  • the ceramic Ma is material in the second joining area with a tungsten-titanium adhesion promoter layer or a pure titanium adhesion promoter layer and / or a metallic wetting layer coated.
  • the adhesion promoter layer and / or the wetting layer can be constructed identically in both joining areas. This ensures that the soldered connection is largely symmetrical. It is clear, however, that this does not have to be the case.
  • a tungsten-titanium bonding agent layer does not necessarily have to be arranged on the ceramic material, but all other suitable soft-solderable metallizations can be provided.
  • the first housing element can have at least one opening in which the at least one second housing element is received, so that the first joining area surrounds the second joining area circumferentially around the opening edge.
  • the first housing element can have at least one opening at which the at least one second housing element is arranged in such a way that the first joining area rests at least partially on the second joining area.
  • Such a resting of the second housing element can be mechanically easier to handle in certain cases because the first housing element can support the second housing element.
  • the at least one second housing element can have at least one line bushing, at least one electrically conductive connecting line being soldered in the line bushing.
  • the second housing element can also not have a line lead-through and can be introduced into the first housing element as a window for the transmission of electromagnetic (e.g. radio) signals.
  • the present invention also relates to a circuit arrangement with a circuit carrier and an electronic component arranged thereon with the joint connection according to the invention.
  • FIG. 1 shows a schematic sectional illustration of a joint connection according to a first aspect of the present invention
  • FIG. 2 shows a schematic sectional illustration of a joint connection according to a further aspect of the present invention
  • FIG. 3 shows a schematic sectional illustration of a joint connection according to a further aspect of the present invention
  • 4 shows a schematic sectional illustration of an electronic component according to a further aspect of the present invention
  • FIGS. 5-7 different production stages of an electronic component according to a further aspect of the present invention.
  • FIG. 8 shows a schematic sectional illustration of part of an electronic component according to the prior art.
  • FIG. 1 shows, in the form of a schematic sectional illustration, a joining connection 100 according to a first aspect of the present invention.
  • the joining connection 100 comprises a first joining area 102 and a second joining area 104, which are connected to one another via a soft solder connection 106.
  • the first joining area 102 is part of an inert metallic base material 108.
  • the second joining area 104 is part of an electrically non-conductive material 110.
  • the inert base material 108 can be titanium or titanium alloys, e.g. B. Ti G4 (pure titanium) or Ti G5 (Ti AI6 V4), or other inert metals such as alloys based on nickel-cobalt, e.g. B. MP35N (trademark of SPS Technologies, LLC), nickel-titanium alloys, e.g. B. Nitinol, or noble include steel.
  • An essential characteristic of the inert base material 108 is the fact that it cannot be directly soldered with a soft solder. According to the invention, an adhesion promoter layer 112 is therefore provided in a peripheral region of the joining region 102.
  • this adhesion promoter layer 112 comprises a tungsten-titanium alloy or pure titanium.
  • the tungsten-titanium alloy can be formed by tungsten with a proportion of 5 to 25 percent by weight of titanium.
  • a W Ti 10 alloy or pure titanium with a thickness of 50 nm, for example, is preferably used.
  • the adhesion promoter layer it is of course also possible for the adhesion promoter layer to contain other alloy components in addition to tungsten and titanium.
  • the adhesion promoter layer 112 enables a soft solder 106 to be used for a stable, hermetic connection to the inert metallic base material 108.
  • a wetting layer 114 is optionally provided between the adhesion promoter layer 112 and the soft solder 106.
  • the wetting layer 114 can be formed, for example, by a platinum layer.
  • this layer 114 can have a thickness of 500 nm.
  • gold, silver, copper, nickel, nickel-palladium, palladium and tin-lead alloys can be used.
  • the metallic base material 108 is first cleaned with standard solvents such as acetone, alcohol or deionized water.
  • the base material 108 is then introduced into a high vacuum chamber and provided with the adhesion promoter layer 112 in a sputtering process.
  • this can be a WTi10 layer or a pure titanium layer with a thickness of a few nanometers.
  • the optional wetting layer 114 is applied in the same facility using a different target. For example, several 100 nm, preferably 500 nm, of a platinum layer can be vapor-deposited.
  • the non-conductive material 110 is also provided with a metallization layer 116 in the second joining area 104.
  • the layer structure of the metallization layer 116 differs from the layer structure in the first joining region 102.
  • the metallization layer 116 has only a single layer of a metallization customary for conductor tracks on ceramic substrates.
  • the electrically non-conductive material 110 can for example be made of aluminum oxide ceramic, borosilicate glass or any other suitable insulator.
  • the metallization 116 is correspondingly made of a molybdenum-manganese alloy, gold-containing pastes, a tungsten-titanium alloy or the like produced, which can also be burned into the ceramic, as is known for ceramic substrates.
  • the soft solder connection 106 connects on the one hand with the adhesion promoter layer 112 according to the invention or the optional wetting layer 114 in the first joining area 102 and on the other hand with the metallization layer 116 in the second joining area 104 and is activated by capillary forces in the gap 118 between the first joining area 102 and the second Joining area 104 drawn.
  • the soft solder connection 106 between the first joining area 102 and the second joining area 104 can be formed in different ways.
  • a commercially available solder wire and a hand soldering iron can be used.
  • a solder paste can be applied, which is melted in a reflow oven.
  • a solder foil can be applied and melted in the reflow oven.
  • What all variants have in common is that a maximum process temperature of 450 ° C is reached and only very low demands are made on the atmosphere.
  • cleaning is then carried out in order to remove the flux released during soldering. This can be done in an ultrasonic bath with slightly basic solutions and subsequent rinsing.
  • the electrically non-conductive material 110 is fitted into an opening 120 in the inert metallic base material 108, forming the gap 118.
  • the surfaces of the two joining areas 102, 104 form an essentially flat surface on which the solder seam is formed.
  • This configuration requires the electrically non-conductive material 110 to be fixed in the opening 120. Therefore, according to a further aspect of the present invention, the configuration shown in FIG. 2 is proposed.
  • the second joint area 204 rests partially on the first joint area 202.
  • the electrically non-conductive material 210 is formed, for example, by a ceramic plate.
  • the ceramic plate carries a soldering foil 206 on the surface facing the first soldering area 202.
  • an adhesion promoter layer 212 for example a W Ti10 alloy layer, is applied in the first joint area.
  • amorphous solder foils eutectic alloys of transition metals such as nickel, iron, copper or the like are produced, which contain proportions of the semimetals silicon and boron, and / or phosphorus.
  • Amorphous soldering foils are offered in the form of thin metal foils or molded parts made from them. These molded parts can be made as cut-to-length film strips, punched or photo-chemically produced molded parts for special applications.
  • the foil is soldered in a soldering furnace under a protective gas atmosphere or in a vacuum.
  • solder foils or molded parts are very well suited to be implemented in automatic assembly processes.
  • the film thickness which can be finely varied, makes it possible to set the required amount of solder exactly to the specific application.
  • foils or molded parts made of foil that are specially designed for the application, waste is avoided and the production speed is increased, which increases the profitability of the soldering process.
  • solder foils can contain layer systems that are suitable for modern transient liquid phase diffusion bonding (transient liquid phase bonding, TLP). This process is also classified as a low temperature process.
  • FIG. 3 Another advantageous embodiment of a joining connection 300 between a first joining area 302 and a second joining area 304 is shown in FIG.
  • the first joining area 302 and the second joining area 304 overlap.
  • the inert metallic base material 108 is thicker than the electrically non-conductive material 310, the first joining area 302 being part of a recess 322.
  • the electrically non-conductive material 310 is received in the recess 322 in such a way that it is embedded in the metallic base material 308.
  • the metallic base material 308 is provided with a tungsten-titanium adhesion promoter layer 312 and an optional wetting layer 314.
  • the electrically non-conductive material 310 e.g. B. is formed by a ceramic material or Borosi likatglas, has a metallization layer 316.
  • the soft solder connection 306 is formed by a correspondingly structured soldering foil. All other variants of soft soldering explained above can of course also be used in this embodiment.
  • 4 shows a schematic sectional illustration of an example of an electronic component 400 with a soft solder connection 406.
  • An inert metallic base material 408 forms a housing 424.
  • the housing 424 forms a cavity in which a circuit carrier 426 is arranged.
  • the circuit carrier 426 is equipped with electronic components 428.
  • the electronic components can be connected to corresponding conductor tracks 432 on the circuit carrier 426 via reflow soldered connections 430.
  • the electronic component 400 can be, for example, an active medical implant such as a cardiac pacemaker.
  • the inert metallic base material 408 is a biocompatible, electronics shielding titanium or titanium alloy housing.
  • the joining technology according to the invention is used to solder a bushing unit 434 to the housing 424 in such a way that the components contained therein are hermetically encapsulated, and at the same time to provide electrical bushings 436 for excitation electrodes and sensor signal lines.
  • a pure ceramic or borosilicate substrate can also serve as a window for electromagnetic signals.
  • the leadthrough unit 434 has an electrically non-conductive material 410 such as an aluminum oxide ceramic, a borosilicate glass or another mechanically and chemically stable insulator.
  • the peripheral area of the leadthrough unit 434 is provided with a metallization layer 416.
  • the feedthroughs 436 have vias with connecting lines received therein (not visible in detail in the figure).
  • the lead-through unit 434 can largely be prefabricated before it is fitted into the opening 420 of the housing 424.
  • the inert base material 408 of the housing 424 is provided all around the opening 420 with an adhesion promoter layer 412 and a wetting layer 414 deposited thereon.
  • the housing 424 can be subjected to a sputtering process in the not yet populated state as well as with the components received therein in order to deposit the adhesion promoter layer 412 and the wetting layer 414.
  • the outline of the feedthrough unit 434 can be any shape, e.g. B. round, oval or rectangular, and expediently follows the outline of the opening 420.
  • sharp kinks in the outline can be completed with a hermetic soldered seam 406 by the described invention.
  • the joining technique according to the invention can also be used to hermetically seal selected parts of a circuit arrangement. This is particularly advantageous when electrical shielding and / or hermetic encapsulation of certain circuit components is required.
  • Such a circuit arrangement 500 according to a further aspect of the present invention is to be explained with reference to FIGS.
  • the circuit arrangement 500 comprises a cover 538 which consists of an inert metallic base material 508, such as titanium or stainless steel or nickel-cobalt-chromium alloys.
  • the cover 538 encapsulates at least a first electronic component 528 that is mounted on a ceramic substrate 540.
  • the ceramic substrate 540 thus forms the electrically non-conductive joining partner for the joining connection according to the present invention, while the cover 538 represents the inert metallic joining partner.
  • a soft solder connection 506 is attached around the cover 538.
  • the soft solder connection 506 establishes a connection between a first joining area 502, which is arranged in an edge area of the cover 538, and a second joining area 504, which is arranged on the ceramic substrate 540.
  • an adhesion promoter layer 512 is arranged in the first joining region 502, which has, for example, a tungsten-titanium alloy layer or pure titanium.
  • a W Ti 10 layer several nanometers thick or a pure titanium layer can be applied by means of sputter deposition.
  • a wetting layer 514 can also optionally be provided between the adhesion promoter layer 512 and the solder layer 506.
  • the wetting layer 514 can have a platinum layer, for example.
  • the ceramic substrate 540 has the same layer sequence in the second joining region 504, which is formed from a tungsten-titanium alloy 512 and a platinum layer 514. According to the embodiment shown, this layer sequence is also used for the electrical connecting lines 542. The electrical contact to the outside takes place via vias 544, which lead through the ceramic substrate 540 to its rear side. Alternatively, however, a simple metallization layer analogous to the embodiment of FIG. 4 can also be provided.
  • the ceramic substrate 540 with the hermetically encapsulated electronic component 528 located thereon is arranged on a circuit carrier 546.
  • the circuit carrier 546 can, for example, be a conventional printed circuit board (PCB), with conductor tracks 548 and contact pads 550 embedded therein.
  • the circuit carrier 546 can of course also comprise flexible printed circuit boards or ceramic substrates.
  • Further electronic components 552 can be arranged outside the hermetically sealed cover 538 on the circuit carrier 546.
  • the soft solder connection 506 can also be used for the electrical contacting of these further electronic components.
  • Sn Ag4 is used as a soft solder.
  • circuit arrangement 500 An exemplary production process for the circuit arrangement 500 is explained below, beginning with the arrangement from FIG.
  • a circuit carrier 546 which can be, for example, a standard PCB made of FR4, is equipped with solder paste 554 and the electronic components 552 in an automatic assembly machine.
  • a ceramic substrate 540 carries a solderable layer as shown in FIG. 4 or else, as shown in FIG. 5, a metallization which is formed from a tungsten-titanium alloy 512 and a platinum layer 514.
  • the ceramic substrate 540 is also equipped with solder paste 554 and at least one electronic component 528.
  • the solder paste 554 is also filled into the vias 544 (see FIG. 6) and applied as a frame in the second joining area 504.
  • the cover 538 as the metallic base material 508, is first cleaned with standard solvents such as acetone, alcohol or deionized water.
  • the base material 508 is then introduced into a high vacuum chamber and provided with the adhesion promoter layer 512 in a sputtering process.
  • this can be a W Ti10 layer or a pure titanium layer with a thickness of a few nanometers.
  • the optional wetting layer 514 is applied in the same facility using a different target. For example, several 100 nm, preferably 500 nm, of a platinum layer can be vapor-deposited.
  • the cover 538 is placed on the frame made of solder paste 554.
  • solder paste 554 In a common reflow process, all of the solder pastes are melted and the electrical connections are made to the electronic components 528 and 552 and the hermetic encapsulation between the joining areas 502, 504 is sealed.
  • the present invention solves the problem described above by using the titanium material or the titanium alloy in a sputtering system with z. B. is vaporized with WTilO as an adhesion promoter and with platinum as a wetting layer.
  • the applied layer provides a long-term stable and hermetic connection to the base material.
  • the outer platinum layer can be wetted with leaded and lead-free tin solders (soft solders with a melting point below 450 ° C).
  • the composite which comprises the base material, a W Ti10 layer or titanium layer, a platinum layer and the tin solder, is in turn stable and hermetic.
  • a soft solder connection is formed between the base material and the ceramic.
  • the entire assembly is stable and hermetic.
  • the joints according to the invention allow a stable soft solder connection to highly inert titanium and titanium alloys.
  • the joining process can take place under room air conditions and at temperatures below 450 ° C. Furthermore, the joining process does not affect the native oxide layers on the base material. Finally, a high degree of freedom in the possible designs of the joints can be achieved.
  • the applied layer composite does not require any pretreatment of the base material apart from a cleanly cleaned surface.
  • the materials are not thermally stressed during sputter deposition.
  • phase composition of the base material There are no changes in the phase composition of the base material. This coating only takes place on the base material of the first joining partner.
  • the subsequent joining partner does not necessarily have to be processed in the high vacuum chamber during the sputter deposition.
  • the design of the components and joints does not have to be adapted to the stress load when they cool down together from high temperatures above 450 ° C.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Ceramic Products (AREA)

Abstract

La présente invention concerne un procédé de jonction d'au moins une première et une seconde zone de jonction (102, 104), un joint correspondant (100) et un composant électronique comprenant au moins un tel joint. L'invention concerne également un ensemble circuit comprenant un composant électronique encapsulé. Un procédé de jonction d'au moins une première et une seconde zone de jonction (102, 104) comprend les étapes suivantes : - appliquer une couche de promoteur d'adhérence (112) dans la première zone de jonction (102), ladite première zone de jonction (102) ayant une surface métallique inerte au moins dans certaines parties, et ladite couche de promoteur d'adhérence (112) comprenant une couche d'alliage de tungstène-titane ou du titane pur, - fournir la seconde zone de jonction (104), ladite seconde zone de jonction (104) présentant une surface métallique au moins dans certaines parties, et - souder les première et seconde zones de jonction (102, 104) au moyen d'une liaison de brasure tendre (106).
EP20817267.6A 2019-12-04 2020-12-01 Procédé de jonction d'au moins une première et une seconde zone de jonction, joint ainsi que composant électronique et ensemble circuit Pending EP4069459A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102019218866.4A DE102019218866A1 (de) 2019-12-04 2019-12-04 Verfahren zum Fügen mindestens eines ersten und eines zweiten Fügebereichs, Fügeverbindung und elektronische Komponente sowie Schaltungsanordnung
PCT/EP2020/084006 WO2021110619A1 (fr) 2019-12-04 2020-12-01 Procédé de jonction d'au moins une première et une seconde zone de jonction, joint ainsi que composant électronique et ensemble circuit

Publications (1)

Publication Number Publication Date
EP4069459A1 true EP4069459A1 (fr) 2022-10-12

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Family Applications (1)

Application Number Title Priority Date Filing Date
EP20817267.6A Pending EP4069459A1 (fr) 2019-12-04 2020-12-01 Procédé de jonction d'au moins une première et une seconde zone de jonction, joint ainsi que composant électronique et ensemble circuit

Country Status (3)

Country Link
EP (1) EP4069459A1 (fr)
DE (1) DE102019218866A1 (fr)
WO (1) WO2021110619A1 (fr)

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3393446A (en) * 1966-05-23 1968-07-23 Philips Corp Method for joining aluminum to metals
CA1056514A (fr) * 1975-03-31 1979-06-12 General Electric Company Methode de liaison metal refractaire ou semi-conducteur/metal ductile
DE2906802C2 (de) * 1979-02-22 1986-07-03 Degussa Ag, 6000 Frankfurt Verfahren zur Vorbehandlung von Leichtmetallen vor dem Löten
US4509880A (en) * 1981-03-30 1985-04-09 Honeywell Inc. Very high hermeticity glass to metal seal
US4895291A (en) * 1989-05-04 1990-01-23 Eastman Kodak Company Method of making a hermetic seal in a solid-state device
DE19528441C2 (de) * 1995-03-01 1997-12-18 Fraunhofer Ges Forschung Untermetallisierung für Lotmaterialien
WO2000062969A2 (fr) * 1999-04-16 2000-10-26 Edison Welding Institute Alliage de brasage
JP3414388B2 (ja) * 2000-06-12 2003-06-09 株式会社日立製作所 電子機器
US6575353B2 (en) * 2001-02-20 2003-06-10 3M Innovative Properties Company Reducing metals as a brazing flux
US6953146B2 (en) * 2002-10-24 2005-10-11 Leonard Nanis Low-temperature flux for soldering nickel-titanium alloys and other metals
EP3311883B1 (fr) * 2016-10-21 2020-01-29 BIOTRONIK SE & Co. KG Broche de raccordement et traversée

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WO2021110619A1 (fr) 2021-06-10

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