EP3991205A4 - Dispositif de mémoire ferroélectrique contenant des lignes de mots et des grilles de passage et son procédé de formation - Google Patents

Dispositif de mémoire ferroélectrique contenant des lignes de mots et des grilles de passage et son procédé de formation Download PDF

Info

Publication number
EP3991205A4
EP3991205A4 EP19934652.9A EP19934652A EP3991205A4 EP 3991205 A4 EP3991205 A4 EP 3991205A4 EP 19934652 A EP19934652 A EP 19934652A EP 3991205 A4 EP3991205 A4 EP 3991205A4
Authority
EP
European Patent Office
Prior art keywords
forming
memory device
same
word lines
ferroelectric memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP19934652.9A
Other languages
German (de)
English (en)
Other versions
EP3991205A1 (fr
Inventor
Yanli Zhang
Johann Alsmeier
Raghuveer S. Makala
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SanDisk Technologies LLC
Original Assignee
SanDisk Technologies LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US16/457,721 external-priority patent/US10811431B1/en
Priority claimed from US16/457,687 external-priority patent/US10868042B1/en
Application filed by SanDisk Technologies LLC filed Critical SanDisk Technologies LLC
Publication of EP3991205A1 publication Critical patent/EP3991205A1/fr
Publication of EP3991205A4 publication Critical patent/EP3991205A4/fr
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2259—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/223—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using MOS with ferroelectric gate insulating film
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
    • H10B51/20—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the three-dimensional arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
    • H10B51/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
EP19934652.9A 2019-06-28 2019-12-30 Dispositif de mémoire ferroélectrique contenant des lignes de mots et des grilles de passage et son procédé de formation Pending EP3991205A4 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/457,721 US10811431B1 (en) 2019-06-28 2019-06-28 Ferroelectric memory device containing word lines and pass gates and method of forming the same
US16/457,687 US10868042B1 (en) 2019-06-28 2019-06-28 Ferroelectric memory device containing word lines and pass gates and method of forming the same
PCT/US2019/068871 WO2020263339A1 (fr) 2019-06-28 2019-12-30 Dispositif de mémoire ferroélectrique contenant des lignes de mots et des grilles de passage et son procédé de formation

Publications (2)

Publication Number Publication Date
EP3991205A1 EP3991205A1 (fr) 2022-05-04
EP3991205A4 true EP3991205A4 (fr) 2023-07-12

Family

ID=74060740

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19934652.9A Pending EP3991205A4 (fr) 2019-06-28 2019-12-30 Dispositif de mémoire ferroélectrique contenant des lignes de mots et des grilles de passage et son procédé de formation

Country Status (4)

Country Link
EP (1) EP3991205A4 (fr)
KR (2) KR102638555B1 (fr)
CN (1) CN113179666A (fr)
WO (1) WO2020263339A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115881623A (zh) * 2021-08-19 2023-03-31 长鑫存储技术有限公司 半导体器件及其制造方法
CN115377108B (zh) * 2022-08-26 2024-05-14 芯盟科技有限公司 动态随机存取存储器及其形成方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8173533B2 (en) * 2008-12-31 2012-05-08 Samsung Electronics Co., Ltd. Semiconductor memory device and method of forming the same
US20150357413A1 (en) * 2014-06-05 2015-12-10 Sandisk Technologies Inc. Three Dimensional NAND Device Having a Wavy Charge Storage Layer
US20170148805A1 (en) * 2015-11-20 2017-05-25 Sandisk Technologies Inc. 3d semicircular vertical nand string with recessed inactive semiconductor channel sections
US20170278858A1 (en) * 2016-03-22 2017-09-28 Schiltron Corporation Monolithic 3-d dynamic memory and method

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003068890A (ja) * 2001-08-23 2003-03-07 Rikogaku Shinkokai 不揮発性半導体記憶装置および不揮発性メモリ素子
JP5190275B2 (ja) * 2008-01-09 2013-04-24 パナソニック株式会社 半導体メモリセル及びそれを用いた半導体メモリアレイ
US20160118404A1 (en) * 2014-10-09 2016-04-28 Haibing Peng Three-dimensional non-volatile ferroelectric random access memory
US9355727B1 (en) * 2014-12-09 2016-05-31 Sandisk Technologies Inc. Three-dimensional memory structure having a back gate electrode
US9343160B1 (en) * 2015-02-11 2016-05-17 Sandisk Technologies Inc. Erase verify in non-volatile memory
US9502123B2 (en) * 2015-04-21 2016-11-22 Sandisk Technologies Llc Adaptive block parameters
US9419012B1 (en) * 2015-06-19 2016-08-16 Sandisk Technologies Llc Three-dimensional memory structure employing air gap isolation
DE102017113967A1 (de) * 2016-09-26 2018-03-29 Sandisk Technologies Llc Adaptiver betrieb von 3-d-speicher
US9941299B1 (en) * 2017-05-24 2018-04-10 Sandisk Technologies Llc Three-dimensional ferroelectric memory device and method of making thereof
CN109355622A (zh) * 2018-09-12 2019-02-19 湘潭大学 一种磁控溅射制备铁电薄膜的方法及铁电薄膜

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8173533B2 (en) * 2008-12-31 2012-05-08 Samsung Electronics Co., Ltd. Semiconductor memory device and method of forming the same
US20150357413A1 (en) * 2014-06-05 2015-12-10 Sandisk Technologies Inc. Three Dimensional NAND Device Having a Wavy Charge Storage Layer
US20170148805A1 (en) * 2015-11-20 2017-05-25 Sandisk Technologies Inc. 3d semicircular vertical nand string with recessed inactive semiconductor channel sections
US20170278858A1 (en) * 2016-03-22 2017-09-28 Schiltron Corporation Monolithic 3-d dynamic memory and method

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
FLORENT K ET AL: "First demonstration of vertically stacked ferroelectric Al doped HfO2 devices for NAND applications", 2017 SYMPOSIUM ON VLSI TECHNOLOGY, JSAP, 5 June 2017 (2017-06-05), XP033135080, DOI: 10.23919/VLSIT.2017.7998162 *

Also Published As

Publication number Publication date
KR102638555B1 (ko) 2024-02-21
KR102593318B1 (ko) 2023-10-25
EP3991205A1 (fr) 2022-05-04
KR20210095193A (ko) 2021-07-30
CN113179666A (zh) 2021-07-27
WO2020263339A1 (fr) 2020-12-30
KR20230079248A (ko) 2023-06-05

Similar Documents

Publication Publication Date Title
EP3881355A4 (fr) Dispositif de mémoire ferroélectrique avec transistor à grille de sélection et son procédé de formation
EP3864700A4 (fr) Nouveau dispositif de mémoire non-et 3d et procédé de formation associé
EP3891811A4 (fr) Dispositif de mémoire non volatile et son procédé de fabrication
EP3827350A4 (fr) Dispositifs de mémoire et procédés pouvant faciliter l'accès à une mémoire de tenseur
EP3764715A4 (fr) Procédé et appareil d'accès aléatoire
EP3685382A4 (fr) Mémoire adressable par contenu utilisant des transistors verticaux à seuil ajustable et procédés de formation de celle-ci
EP3895213A4 (fr) Dispositif de mémoire ferroélectrique contenant un transistor à grille de sélection connecté en série et son procédé de formation
EP3915147A4 (fr) Nouveau dispositif de mémoire nand 3d et procédé de formation associé
EP3766071A4 (fr) Procédé et appareil de rafraîchissement de données pour mémoire non volatile analogique dans un réseau neuronal à apprentissage profond
EP3966864A4 (fr) Dispositifs de mémoire ferroélectrique et leurs procédés de formation
EP3745802A4 (fr) Procédé et dispositif d'accès aléatoire
EP3507806A4 (fr) Appareils et procédés comprenant une mémoire ferroélectrique et permettant d'accéder à une mémoire ferroélectrique
SG10201905109VA (en) Non-volatile memory device and erasing method of the same
EP3829095A4 (fr) Procédé d'accès aléatoire et dispositif associé
EP3646188A4 (fr) Procédés de vérification d'adresse de mémoire et dispositifs de mémoire les utilisant
EP3742857A4 (fr) Procédé et dispositif d'accès aléatoire
EP3936996A4 (fr) Procédé de lecture-écriture et dispositif de mémoire
EP3811409A4 (fr) Nouveau dispositif de mémoire non-et et son procédé de formation
EP3930414A4 (fr) Procédé et dispositif d'accès aléatoire
EP4081954A4 (fr) Dispositif de mémoire neuromorphique et procédé associé
EP3964941A4 (fr) Procédé de lecture-écriture et dispositif de mémoire
SG11202008353RA (en) Memory cell and method of forming the same
EP3993518A4 (fr) Procédé et dispositif d'accès aléatoire
EP3891746A4 (fr) Procédé de réalisation d'opération de programmation et dispositif de mémoire associé
EP3991205A4 (fr) Dispositif de mémoire ferroélectrique contenant des lignes de mots et des grilles de passage et son procédé de formation

Legal Events

Date Code Title Description
STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE

PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE

17P Request for examination filed

Effective date: 20210524

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DAV Request for validation of the european patent (deleted)
DAX Request for extension of the european patent (deleted)
REG Reference to a national code

Ref country code: DE

Ref legal event code: R079

Free format text: PREVIOUS MAIN CLASS: H01L0027115900

Ipc: H01L0021280000

A4 Supplementary search report drawn up and despatched

Effective date: 20230609

RIC1 Information provided on ipc code assigned before grant

Ipc: H10B 51/30 20230101ALI20230602BHEP

Ipc: H10B 51/20 20230101ALI20230602BHEP

Ipc: G11C 11/22 20060101ALI20230602BHEP

Ipc: H01L 29/78 20060101ALI20230602BHEP

Ipc: H01L 21/28 20060101AFI20230602BHEP