EP3991205A4 - Ferroelectric memory device containing word lines and pass gates and method of forming the same - Google Patents

Ferroelectric memory device containing word lines and pass gates and method of forming the same Download PDF

Info

Publication number
EP3991205A4
EP3991205A4 EP19934652.9A EP19934652A EP3991205A4 EP 3991205 A4 EP3991205 A4 EP 3991205A4 EP 19934652 A EP19934652 A EP 19934652A EP 3991205 A4 EP3991205 A4 EP 3991205A4
Authority
EP
European Patent Office
Prior art keywords
forming
memory device
same
word lines
ferroelectric memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP19934652.9A
Other languages
German (de)
French (fr)
Other versions
EP3991205A1 (en
Inventor
Yanli Zhang
Johann Alsmeier
Raghuveer S. Makala
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SanDisk Technologies LLC
Original Assignee
SanDisk Technologies LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US16/457,721 external-priority patent/US10811431B1/en
Priority claimed from US16/457,687 external-priority patent/US10868042B1/en
Application filed by SanDisk Technologies LLC filed Critical SanDisk Technologies LLC
Publication of EP3991205A1 publication Critical patent/EP3991205A1/en
Publication of EP3991205A4 publication Critical patent/EP3991205A4/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2259—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/223—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using MOS with ferroelectric gate insulating film
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
    • H10B51/20—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the three-dimensional arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
    • H10B51/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
EP19934652.9A 2019-06-28 2019-12-30 Ferroelectric memory device containing word lines and pass gates and method of forming the same Pending EP3991205A4 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/457,721 US10811431B1 (en) 2019-06-28 2019-06-28 Ferroelectric memory device containing word lines and pass gates and method of forming the same
US16/457,687 US10868042B1 (en) 2019-06-28 2019-06-28 Ferroelectric memory device containing word lines and pass gates and method of forming the same
PCT/US2019/068871 WO2020263339A1 (en) 2019-06-28 2019-12-30 Ferroelectric memory device containing word lines and pass gates and method of forming the same

Publications (2)

Publication Number Publication Date
EP3991205A1 EP3991205A1 (en) 2022-05-04
EP3991205A4 true EP3991205A4 (en) 2023-07-12

Family

ID=74060740

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19934652.9A Pending EP3991205A4 (en) 2019-06-28 2019-12-30 Ferroelectric memory device containing word lines and pass gates and method of forming the same

Country Status (4)

Country Link
EP (1) EP3991205A4 (en)
KR (2) KR102593318B1 (en)
CN (1) CN113179666A (en)
WO (1) WO2020263339A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115881623A (en) * 2021-08-19 2023-03-31 长鑫存储技术有限公司 Semiconductor device and method for manufacturing the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8173533B2 (en) * 2008-12-31 2012-05-08 Samsung Electronics Co., Ltd. Semiconductor memory device and method of forming the same
US20150357413A1 (en) * 2014-06-05 2015-12-10 Sandisk Technologies Inc. Three Dimensional NAND Device Having a Wavy Charge Storage Layer
US20170148805A1 (en) * 2015-11-20 2017-05-25 Sandisk Technologies Inc. 3d semicircular vertical nand string with recessed inactive semiconductor channel sections
US20170278858A1 (en) * 2016-03-22 2017-09-28 Schiltron Corporation Monolithic 3-d dynamic memory and method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5190275B2 (en) * 2008-01-09 2013-04-24 パナソニック株式会社 Semiconductor memory cell and semiconductor memory array using the same
US20160118404A1 (en) * 2014-10-09 2016-04-28 Haibing Peng Three-dimensional non-volatile ferroelectric random access memory
US9941299B1 (en) * 2017-05-24 2018-04-10 Sandisk Technologies Llc Three-dimensional ferroelectric memory device and method of making thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8173533B2 (en) * 2008-12-31 2012-05-08 Samsung Electronics Co., Ltd. Semiconductor memory device and method of forming the same
US20150357413A1 (en) * 2014-06-05 2015-12-10 Sandisk Technologies Inc. Three Dimensional NAND Device Having a Wavy Charge Storage Layer
US20170148805A1 (en) * 2015-11-20 2017-05-25 Sandisk Technologies Inc. 3d semicircular vertical nand string with recessed inactive semiconductor channel sections
US20170278858A1 (en) * 2016-03-22 2017-09-28 Schiltron Corporation Monolithic 3-d dynamic memory and method

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
FLORENT K ET AL: "First demonstration of vertically stacked ferroelectric Al doped HfO2 devices for NAND applications", 2017 SYMPOSIUM ON VLSI TECHNOLOGY, JSAP, 5 June 2017 (2017-06-05), XP033135080, DOI: 10.23919/VLSIT.2017.7998162 *

Also Published As

Publication number Publication date
KR102638555B1 (en) 2024-02-21
KR20210095193A (en) 2021-07-30
KR102593318B1 (en) 2023-10-25
CN113179666A (en) 2021-07-27
WO2020263339A1 (en) 2020-12-30
KR20230079248A (en) 2023-06-05
EP3991205A1 (en) 2022-05-04

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