EP3712925A1 - Semi-conducteur au nitrure du groupe iii - Google Patents

Semi-conducteur au nitrure du groupe iii Download PDF

Info

Publication number
EP3712925A1
EP3712925A1 EP18877486.3A EP18877486A EP3712925A1 EP 3712925 A1 EP3712925 A1 EP 3712925A1 EP 18877486 A EP18877486 A EP 18877486A EP 3712925 A1 EP3712925 A1 EP 3712925A1
Authority
EP
European Patent Office
Prior art keywords
layer
concentration
gan
ingan
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP18877486.3A
Other languages
German (de)
English (en)
Other versions
EP3712925A4 (fr
Inventor
Akihiko Ishibashi
Akio Ueta
Hiroshi Ohno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp filed Critical Panasonic Corp
Publication of EP3712925A1 publication Critical patent/EP3712925A1/fr
Publication of EP3712925A4 publication Critical patent/EP3712925A4/fr
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H01S5/3406—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation including strain compensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Definitions

  • the present disclosure relates to a group III nitride semiconductor.
  • Group III nitride semiconductors can cover a wide bandgap by changing the composition of Ga, Al and In being group III elements. Such semiconductors are widely used in optical semiconductor devices such as light-emitting diodes (LEDs) and semiconductor laser diodes (LDs), and electronic devices for high-frequency and high-output applications. In general, such devices are produced by epitaxial growth of a group III nitride semiconductor layer on a sapphire substrate. A sapphire substrate, however, has a lattice mismatch of 13.8% to GaN as one of group III nitride semiconductors, represented by ⁇ (lattice constant of GaN - lattice constant of sapphire)/lattice constant of GaN ⁇ . Thus, there may be caused an increase in defect density in a group III nitride semiconductor epitaxially grown and/or the occurrence of cracks in a group III nitride semiconductor. Such phenomena currently cause deterioration in characteristics and reliability of devices.
  • the group III nitride semiconductor layer having such a lattice mismatch is aimed at reductions in defects and cracks, and a technique is disclosed which allows GaN to be epitaxially grown on a ScAlMgO 4 substrate (PTL 1).
  • ScAlMgO 4 has a small lattice mismatch of -1.8% to GaN, represented by ⁇ (lattice constant of GaN - lattice constant of ScAlMgO 4 )/lattice constant of GaN ⁇ . Accordingly, a group III nitride semiconductor epitaxially grown on a ScAlMgO 4 substrate is reduced in the occurrence of defects and/or the occurrence of cracks. Thus, such a semiconductor is expected to be developed to a high-quality and high-performance group III nitride semiconductor device.
  • the ScAlMgO 4 substrate has a lattice constant close to the lattice constant of GaN, but has a lower lattice constant than the lattice constant of GaN.
  • the present disclosure has been made in order to solve the above problems, and an object thereof is to provide a high-quality group III nitride semiconductor.
  • a group III nitride semiconductor according to the present disclosure comprises: a GaN layer composed of Al x Ga 1-x N(0 ⁇ x ⁇ 1); an InGaN layer disposed on the GaN layer and composed of InGaN; an AlGaN layer disposed on the InGaN layer and composed of Al y Ga 1-y N (0 ⁇ y ⁇ 1); and a functional layer disposed on the AlGaN layer, wherein a concentration of Mg in the GaN layer is higher than a concentration of Mg in the AlGaN layer.
  • a proper degree of diffusion of Mg in a GaN layer slightly increases the lattice constant of GaN, and thus allows the lattice constant of the GaN layer to be close to the lattice constant of a functional layer.
  • the functional layer can be hardly distorted, thereby allowing a group III nitride semiconductor having high characteristics to be provided.
  • an InGaN layer can suppress Mg from being diffused into the functional layer, resulting in an enhancement in crystal quality of the functional layer. Accordingly, a high-quality group III nitride semiconductor can be provided.
  • Examples of the substrate for use in the present Embodiment include a RAMgO 4 substrate made of a single crystal body represented by RAMgO 4 (wherein R represents one or more trivalent elements selected from the group consisting of Sc, In, Y, and lanthanoids, and A represents one or more trivalent elements selected from the group consisting of Fe (III), Ga, and Al).
  • RAMgO 4 substrate is a ScAlMgO 4 substrate, but the substrate for use in the present Embodiment is not limited to the ScAlMgO 4 substrate.
  • a single crystal of ScAlMgO 4 constituting the ScAlMgO 4 substrate has a structure where a ScO 2 layer having a rock salt type structure and an AlMgO 2 layer having a hexagonal structure are alternately stacked, and can be cleaved in the (0001) plane as in graphite and hexagonal BN.
  • ScAlMgO 4 has a very low degree of lattice mismatch ⁇ (lattice constant of GaN - lattice constant of ScAlMgO 4 )/lattice constant of GaN ⁇ of -1.8% to GaN (GaN has a slightly low lattice constant as compared with ScAlMgO 4 ), as compared with a sapphire substrate and the like.
  • the difference in coefficients of thermal expansion between ScAlMgO 4 and GaN ⁇ (coefficient of thermal expansion of GaN - coefficient of thermal expansion of ScAlMgO 4 )/coefficient of thermal expansion of GaN ⁇ is about -10.9%.
  • a low degree of lattice mismatch is effective for a decrease in crystal defects, and it is expected that the ScAlMgO 4 substrate is used to form a group III nitride semiconductor layer decreased in defects.
  • FIG. 1 illustrates one configuration example of light-emitting diode (LED) 100 including group III nitride semiconductor 10 according to the present Embodiment.
  • Light-emitting diode 100 of the present Embodiment has a configuration where Si-doped n-GaN layer 2, Si-doped n-InGaN layer 3, Si-doped n-AlGaN layer 4, InGaN light-emitting layer 5, and p-AlGaN layer 6 are disposed on ScAlMgO 4 substrate 1.
  • FIG. 1 (left drawing) also illustrates the concentration profiles of impurities (Mg and Si) between Si-doped n-GaN layer 2 and InGaN light-emitting layer 5 in light-emitting diode 100.
  • Light-emitting diode 100 (group III nitride semiconductor 10) of the present Embodiment can be formed by epitaxial growth on a ScAlMgO 4 substrate with the MOCVD method (Metal Organic Chemical Vapor Deposition).
  • MOCVD method Metal Organic Chemical Vapor Deposition
  • a group III raw material for forming each layer is, for example, trimethyl gallium (TMG), trimethyl indium (TMI), or trimethyl aluminum (TMA), and a V group raw material that can be used for forming each layer is, for example, ammonia (NH 3 ) gas.
  • a carrier gas that can be used is, for example, hydrogen or nitrogen.
  • ScAlMgO 4 substrate 1 is preferably introduced into a furnace and subjected to thermal cleaning in a hydrogen atmosphere at 1,100°C for 10 minutes. Such thermal cleaning can remove any carbon-based contamination attached onto the surface of ScAlMgO 4 substrate 1.
  • the surface temperature of ScAlMgO 4 substrate 1 is dropped to 425°C, TMG, ammonia, and the like are fed into the furnace, and a buffer layer (not illustrated) is formed on ScAlMgO 4 substrate 1 at a low temperature.
  • the thickness and the composition of the buffer layer can be adjusted depending on the growth time and the group III raw material to be fed.
  • the buffer layer here formed is a layer made of GaN, having a thickness of 20 nm.
  • n-GaN layer 2 After formation of the buffer layer, the temperature of ScAlMgO 4 substrate 1 is raised to 1,125°C, resulting in formation of Si-doped n-GaN layer 2 (thickness: 3 ⁇ m).
  • Si-doped n-GaN layer 2 not only TMG and ammonia, but also monosilane gas (SiH 4 ) as a raw material gas for doping with Si is fed with the molar ratio thereof being adjusted.
  • the concentration of Si in n-GaN layer 2 obtained here is about 3 ⁇ 10 18 cm -3 .
  • the "concentration" in the present disclosure means the concentration of any atom, unless particularly noted.
  • the speed of growth is about 3 ⁇ m/h.
  • an n-AlGaN layer may also be prepared by feeding of TMA in growth of n-GaN layer 2. That is, n-GaN layer 2 is composed of Al x Ga 1-x N (0 ⁇ x ⁇ 1).
  • n-InGaN layer 3 (thickness: 30 nm).
  • the amount of In can be controlled by adjustment of the molar ratio of TMG and TMI to be fed. While n-InGaN layer 3 is a layer doped with Si in the present Embodiment, the layer may also be doped with no Si.
  • the concentration of Si in n-InGaN layer 3 can be about 3 ⁇ 10 18 cm -3 as in n-GaN layer 2.
  • the composition of In in n-InGaN layer 3 is preferably adjusted to 5 atom% to 30 atom%, more preferably adjusted to about 10 atom%.
  • a concentration of In of more than 30 atom% may cause the lattice mismatch between GaN and InGaN to be too high, resulting in deterioration in crystallinity, and a concentration of less than 5 atom% may cause no effect of suppressing diffusion of Mg to be obtained.
  • n-AlGaN layer 4 (thickness: 0.5 ⁇ m).
  • concentration of Si in n-AlGaN layer 4 can be about 3 ⁇ 10 18 cm -3 as in n-GaN layer 2.
  • n-AlGaN layer 4 may not contain Al depending on the design of LED. That is, n-AlGaN layer 4 is composed of Al y Ga 1-y N (0 ⁇ y ⁇ 1) including an n-type dopant (which is here Si).
  • InGaN light-emitting layer 5 may be a single InGaN layer, or may be a multiple quantum well where an InGaN layer and a GaN layer are periodically stacked repeatedly. While InGaN light-emitting layer 5 is not doped, the layer may also be doped with Si, provided that the concentration of Si is about 3 ⁇ 10 18 cm -3 or less.
  • the substrate temperature is raised to 1,000°C while growing a GaN layer (not illustrated) with feeding of only TMI being stopped.
  • a hydrogen carrier gas, TMA and cyclopentadienyl magnesium (Cp 2 Mg) are added to form Mg-doped p-AlGaN layer 6 (thickness: about 0.2 ⁇ m).
  • the concentration of Mg can be about 1 ⁇ 10 19 cm -3 .
  • an n-electrode (not illustrated) is formed on a part of any of Si-doped n-GaN layer 2, n-InGaN layer 3, and n-AlGaN layer 4 in production of a device such as an LED, and such an n-electrode is preferably formed in a region (first region described below) where the concentration of Si is higher than the concentration of Mg in the case of formation of such an electrode on a part of n-GaN layer 2.
  • the left drawing (graph) of FIG. 1 illustrates the concentration profiles of impurities (the concentration of Mg and the concentration of Si) in light-emitting diode 100 (LED) actually produced, the diode including group III nitride semiconductor 10 of the present Embodiment.
  • the concentration of Mg was analyzed by a SIMS method (Secondary ION Mass Spectrometry).
  • the concentration of Mg in n-GaN layer 2 located closest to ScAlMgO 4 substrate 1 had a highest value in a region in contact with ScAlMgO 4 substrate 1, and is about 1 ⁇ 10 19 cm -3 to 1 ⁇ 10 22 cm -3 .
  • a comparative light-emitting diode having the same structure except that no n-InGaN layer 3 is included was also produced, and was subjected to profiling of the concentrations of impurities.
  • the concentration of Mg in the light-emitting diode is monotonically decreased as the measurement position is farther from the ScAlMgO 4 substrate towards the surface of the diode, as illustrated in a dotted line in the left drawing (graph) of FIG. 1 .
  • the reason is because a Mg atom constituting ScAlMgO 4 substrate 1 is diffused in the group III nitride semiconductor formed thereon. As illustrated in FIG.
  • a Mg atom is diffused into InGaN light-emitting layer 5 in the comparative light-emitting diode including no n-InGaN layer 3.
  • Such a Mg atom diffused forms point defects such as an interstitial atom in InGaN light-emitting layer 5, and thus serves as a non-light-emission center to thereby reduce the luminous efficiency of an LED.
  • the reduced luminous efficiency causes a carrier subjected to electricity injection in device operation to be converted to heat, resulting in degradation of such a light-emitting layer itself and/or an electrode and thus deterioration in reliability.
  • the light-emitting diode of the present Embodiment including n-InGaN layer 3, allows diffusion of a Mg atom from ScAlMgO 4 substrate 1 to be suppressed in n-InGaN layer 3 as illustrated by a solid line in the left drawing (graph) of FIG. 1 , resulting in a significant decrease in the concentration of Mg in n-AlGaN layer 4 as compared with the concentration of Mg in n-GaN layer 2.
  • the concentration of Mg in InGaN light-emitting layer 5 is decreased to about 2 to 3 ⁇ 10 16 cm -3 or less which corresponds to the detection limit of the SIMS method.
  • n-InGaN layer 3 suppresses diffusion of Mg, thereby allowing the concentration of Mg in n-GaN layer 2 to be higher than the concentration of Mg in n-AlGaN layer 4, in the present Embodiment.
  • n-AlGaN layer 4 has the function of efficient injection of an electronic carrier into InGaN light-emitting layer 5.
  • a large amount of Mg present in n-AlGaN layer 4 naturally results in a large amount of Mg diffused to InGaN light-emitting layer 5.
  • diffusion of Mg is suppressed by the ability to prevent diffusion of n-InGaN layer 3, thereby resulting in a low concentration of Mg in n-AlGaN layer 4, and a higher concentration of the n-type dopant in n-AlGaN layer 4 than the concentration of Mg in n-AlGaN layer 4.
  • all the concentrations of Si in Si-doped n-GaN layer 2, n-InGaN layer 3, and n-AlGaN layer 4 are about 3 ⁇ 10 18 cm -3 .
  • the concentration of Si diffused in a stacked structure is higher than the concentration of Mg diffused therein except for a region of n-GaN layer 2, in contact with ScAlMgO 4 substrate 1.
  • n-GaN layer 2 being located closer to ScAlMgO 4 substrate 1 and having the concentration of Si lower than the concentration of Mg is also referred to as "second region”
  • a region of n-GaN layer 2 being located closer to n-InGaN layer 3 and having the concentration of Si higher than the concentration of Mg is also referred to as "first region”.
  • the region in n-GaN layer 2 in contact with ScAlMgO 4 substrate 1, namely, a region (second region) having the concentration of Mg higher than the concentration of Si can have a thickness of about 2 ⁇ m in the present Embodiment, as described below, such a thickness cannot be increased and thus is about 0.3 ⁇ m in the case where no n-InGaN layer 3 is inserted.
  • the rate of decrease in the concentration of Mg in the thickness direction in n-InGaN layer 3 is higher than the rate of decrease in concentration of Mg in the thickness direction in n-GaN layer 2.
  • Mg is inhibited from being diffused towards n-InGaN layer 3 and thus easily collected in a region closer to ScAlMgO 4 substrate 1 rather than n-InGaN layer 3.
  • Mg is easily diffused towards InGaN light-emitting layer 5, resulting in a decrease in the concentration of Mg in a region of n-GaN layer 2, in contact with ScAlMgO 4 substrate 1, and a decrease in the thickness of the second region.
  • FIG. 3 illustrates comparison of the concentration profile of Mg according to the SIMS method, between a case where n-InGaN layer 3 is included as a diffusion prevention layer as in the present Embodiment (solid line) and a case where no n-InGaN layer 3 is included (dashed line).
  • the comparison was performed between a stacked product (stacked product of the present Embodiment) produced by stacking ScAlMgO 4 substrate 31/n-GaN layer 32/n-InGaN layer 33/n-AlGaN layer 34 in the order presented, and a stacked product (Reference Example) produced by stacking ScAlMgO 4 substrate 31/n-GaN layer 32/n-AlGaN layer 34 in the order presented.
  • the concentration of Mg in Reference Example is monotonically decreased as the measurement position is farther from ScAlMgO 4 substrate 31 towards n-AlGaN layer 34, as illustrated by a dashed line in FIG. 3 .
  • the concentration of Mg is decreased to the same level (about 3 ⁇ 10 18 cm -3 ) as that of Si for doping, at a position of about 2 ⁇ m away from the interface between ScAlMgO 4 substrate 31 and n-GaN layer 32.
  • the concentration of Mg in a structure including n-InGaN layer 33, of the present Embodiment is decreased as the measurement position is farther from ScAlMgO 4 substrate 31 towards n-AlGaN layer 34, but is significantly changed in n-InGaN layer 33, as illustrated by a solid line in FIG. 3 .
  • the concentration of Mg at the interface between n-InGaN layer 33 and n-AlGaN layer 34 is about 3 x 10 17 cm -3 , and decreases by one order of magnitude as compared with the concentration of Mg at the interface between n-GaN layer 32 and n-InGaN layer 33.
  • FIG. 4 illustrates the results of measurement of the depth profile of the concentration of Mg with respect to diffusion of a Mg atom into a group III nitride semiconductor, by the SIMS method. Evaluation was made for four stacked products prepared by stacking only n-GaN layer 42 as a single layer (about 5 ⁇ m) on ScAlMgO 4 substrate 41 with a low-temperature GaN buffer layer being interposed therebetween. No InGaN layer is formed. As illustrated in FIG.
  • the concentration of Mg is likely slightly increased in part in a region of n-GaN layer 42, near ScAlMgO 4 substrate 41, but is decreased as the measurement position is farther from ScAlMgO 4 substrate 41, and is decreased to the same concentration (2 to 3 ⁇ 10 18 cm -3 ) as the concentration of Si as an n-type dopant in the present Embodiment, around a region away from the interface between ScAlMgO 4 substrate 41 and n-GaN layer 42 by a thickness of 2 ⁇ m.
  • a Mg atom in GaN has electric characteristics of acceptor impurities, and the acceptor level is deep and the electrical activation efficiency is about 10%.
  • the concentration of Mg be about 1/10 of the concentration of Si.
  • the amount of Mg electrically activated is 1/100 (1%).
  • n-InGaN layer 3 on n-GaN layer 42 having a thickness of 2 ⁇ m or more (corresponding to a thickness allowing the concentration of Si and the concentration of Mg to be the same or less) enables the amount of Mg electrically activated to be decreased to about 1%, as described above.
  • the lattice constant of GaN is extremely close to, but is slightly lower than that of the ScAlMgO 4 substrate (rate of lattice mismatch: -1.8%).
  • diffusion of 1 ⁇ 10 19 cm -3 or more of Mg into n-GaN layer 2 results in a slight increase in the lattice constant, thereby allowing the lattice constant of ScAlMgO 4 substrate 1 to be closer to that of n-GaN layer 2, resulting in suppression of the occurrence of defects at the same interface.
  • n-InGaN layer 33 is included, and thus diffusion of Mg is limited in the layer as illustrated in FIG. 3 . Accordingly, the concentration of Mg in n-GaN layer 32 is likely to be higher than that in Reference Example including no n-InGaN layer 33, resulting in a further improvement in lattice matching. As described above, the thickness in a region where the concentration of Mg in n-GaN layer 2 is 1 ⁇ 10 19 cm -3 or more is likely to be increased, and can be, for example, 0.5 to 2.0 ⁇ m (a typical value is about 1.5 ⁇ m), in the structure of the present Embodiment.
  • the thickness is significantly thicker than the thickness (about 0.2 ⁇ m) in n-GaN layer 2 in Reference Example.
  • the thickness in a region where the concentration of Mg in n-GaN layer 2 is 1 ⁇ 10 19 cm -3 or more is preferably 0.5 ⁇ m or more, more preferably 1 ⁇ m or more.
  • a concentration of Mg of more than 1 ⁇ 10 22 cm -3 in the second region of n-GaN layer 2 is not preferable because the crystal quality of GaN is deteriorated. Accordingly, the concentration of Mg in the second region of n-GaN layer 2 is desirably 1 x 10 19 cm -3 or more and 1 ⁇ 10 22 cm -3 or less.
  • n-InGaN layer 3 can be used as a diffusion prevention layer of Mg, resulting in suppression of defects at the interface between the ScAlMgO 4 substrate and n-GaN layer 2 and suppression of diffusion of a Mg atom serving as a non-light-emission center into InGaN light-emitting layer 5 at the same time.
  • n-InGaN layer 3 can be disposed at a position of 2 ⁇ m or more away from the interface between ScAlMgO 4 substrate 1 and n-GaN layer 2, thereby providing an LED structure where the concentration of an n-type carrier is kept.
  • FIG 5 illustrates the concentration profiles of impurities in a light-emitting diode including n-GaN layer 51, n-InGaN layer 52, InGaN light-emitting layer 53, and p-AlGaN layer 54 stacked.
  • n-InGaN layer 52 is used as a diffusion prevention layer of Mg.
  • FIG. 5 illustrates the concentrations of impurities (Mg and Si) (solid lines) around InGaN light-emitting layer 53 of an LED produced on a ScAlMgO 4 substrate (not illustrated), and also illustrates the depth profile (in proportion to the concentration of In: dashed line) of the secondary ion intensity of an In atom. As illustrated in FIG.
  • a Mg atom to a concentration of 3 to 4 ⁇ 10 18 cm -3 ) diffused from the ScAlMgO 4 substrate (not illustrated) into n-GaN layer 51 is suppressed in diffusion in n-InGaN layer 52 and the concentration of Mg in InGaN light-emitting layer 53 is decreased to the order of 10 16 .
  • p-AlGaN layer 54 located closer to the surface of the LED is doped with Mg, and thus has a concentration of Mg of about 1 to 2 ⁇ 10 19 cm -3 .
  • the concentration of Si in n-GaN layer 51 is about 5 ⁇ 10 18 cm -3 , and is higher than the concentration of Mg (3 to 4 ⁇ 10 18 cm -3 ) diffused from the ScAlMgO 4 substrate. While FIG. 5 does not illustrate any AlGaN layer disposed between InGaN light-emitting layer 53 and n-InGaN layer 52 for convenience, the same effect is obtained even in the case of formation of any AlGaN layer therebetween.
  • FIG 5 illustrates an enlarged view of the vicinity of InGaN light-emitting layer 52 in a semiconductor apparatus, and does not illustrate the ScAlMgO 4 substrate and the second region (a region located closer to the ScAlMgO 4 substrate, where the concentration of an n-type dopant is lower than the concentration of Mg) in n-GaN layer 51.
  • the concentration of Si and the concentration of Mg are apparently substantially the same in InGaN light-emitting layer 53, both the concentrations are traces equal to or less the measurement limit, and thus it can also be interrupted that neither Mg nor Si is contained in InGaN light-emitting layer 53.
  • n-InGaN layer 3 can cause absorption of light from a light-emitting layer in LED device operation to be lost. Accordingly, the thickness of n-InGaN layer 3 is less than the thickness of n-GaN layer 2 or n-AlGaN layer 4. On the other hand, not a too thin n-InGaN layer 3 is preferable from the viewpoint that n-GaN layer 2 includes a relatively large amount of Mg and the thickness in a region (second region) having a high lattice constant is increased (increased to 0.5 ⁇ m or more). Specifically, the thickness is preferably 3 nm to 100 nm, more preferably 10 to 80 nm.
  • Light-emitting diode 200 (group III nitride semiconductor 20) of the present Embodiment has a configuration where Si-doped n-GaN layer 2, Si-doped n-InGaN layer 3, Si-doped n-AlGaN layer 4, InGaN light-emitting layer 5, and p-AlGaN layer 6 are disposed on ScAlMgO 4 substrate 11, as illustrated in FIG 2.
  • FIG. 2 also illustrates the concentration profiles of impurities (Mg and Si) between Si-doped n-GaN layer 2 and InGaN light-emitting layer 5 in light-emitting diode 200 (left drawing).
  • Si-doped n-GaN layer 2 Si-doped n-InGaN layer 3, Si-doped n-AlGaN layer 4, InGaN light-emitting layer 5, and p-AlGaN layer 6 are the same as in Embodiment 1, and thus the detail description thereof is omitted.
  • protrusions and recesses are formed in a stripe pattern on the ScAlMgO 4 substrate.
  • a dielectric mask layer such as SiO 2 is deposited on the ScAlMgO 4 substrate, and the upper surface of the mask layer is coated with a resist film.
  • the resist film coated is patterned in a stripe pattern according to a photolithography method.
  • a resist pattern is formed.
  • a part of the mask layer is removed by etching, thereby resulting in not only formation of a stripe-shaped protrusion portion, but also formation of a plurality of openings.
  • dry etching is performed to thereby form a plurality of periodic structures on the mask layer, the structures each having an opening portion having a cross-sectional width of about 3 ⁇ m and a protrusion portion having a cross-sectional width of about 12 ⁇ m as one cycle.
  • n-GaN layer 2 is formed on ScAlMgO 4 substrate 11 having protrusions and recesses with a low-temperature GaN buffer layer (not illustrated) being interposed therebetween.
  • a GaN crystal is grown upward and laterally from each protrusion portion of ScAlMgO 4 substrate 11 having protrusions and recesses.
  • the GaN crystal formed on each protrusion portion is bound and thus formed into flat n-GaN layer 2.
  • void portion 12 is formed between n-GaN layer 2 and ScAlMgO 4 substrate 11 having protrusions and recesses.
  • GaN on void portion 12 corresponds to a crystal laterally grown, and is formed not in contact with the ScAlMgO 4 substrate as a different substrate and thus is a high-quality crystal extremely less in dislocation.
  • Si-doped n-InGaN layer 3, Si-doped n-AlGaN layer 4, InGaN light-emitting layer 5, and p-AlGaN layer 6 are stacked, thereby providing light-emitting diode 200 of the present Embodiment.
  • the method for forming the layers to be formed after n-InGaN layer 3 and the configurations of such layers are the same as in Embodiment 1.
  • the ScAlMgO 4 substrate having protrusions and recesses is used, resulting in not only the effect of reducing dislocation, but also the effect of increasing the extraction efficiency due to light outwardly radiated by light scattering with such protrusions and recesses in LED device operation.
  • Formation of protrusions and recesses on the ScAlMgO 4 substrate is not limited to a stripe manner, and the same effects are exerted even in the case of formation of protrusions and recesses in an island-shaped manner, and the periodicity is also not necessarily required.
  • Such a substrate represented by RAMgO 4 is constituted by a substantially single crystal material represented by general formula RAMgO 4 .
  • R represents one or more trivalent elements selected from the group consisting of Sc, In, Y, and lanthanoids (atomic number: 67 to 71)
  • A represents one or more trivalent elements selected from the group consisting of Fe (III), Ga, and Al.
  • substantially single crystal material refers to a crystalline solid containing 90 atom% or more of RAMgO 4 constituting a plane epitaxially grown and being the same in the orientation even in any portion of the plane epitaxially grown with respect to any crystal axis. It is noted that not only any solid having a crystal axis locally changed in the orientation, but also any solid locally including lattice defects is treated as such a single crystal.
  • O represents oxygen and Mg represents magnesium.
  • R preferably represents Sc and A preferably represents Al.
  • a main group III elemental metal constituting group III nitride is most preferably gallium (Ga), and such a main group III elemental metal may be, for example, aluminum (Al), indium (In), or thallium (Tl). Such metals may be used singly or in combinations of two or more kinds thereof.
  • the n-InGaN layer may further contain aluminum (Al).
  • the composition of the n-InGaN layer is represented by Al s Ga t In ⁇ 1-(s+t) ⁇ N (wherein 0 ⁇ s ⁇ 1, 0 ⁇ t ⁇ 1, and s + t ⁇ I).
  • the n-type dopant is not particularly limited, and examples include oxygen and Ge, in addition to Si. While the MOCVD method is used in the present Examples, the same effects can also be obtained with a HVPE method, an OVPE (Oxygen Vapor Phase Epitaxy) method, a sputtering method, a MBE method, or the like as the epitaxial growth method.
  • a HVPE method an OVPE (Oxygen Vapor Phase Epitaxy) method
  • a sputtering method a MBE method, or the like as the epitaxial growth method.
  • each layer to be formed between the ScAlMgO 4 substrate and the InGaN light-emitting layer is of n-type
  • an aspect where the dopant in each layer is not activated can also be encompassed within the scope of the present disclosure.
  • GaN layer 2 illustrated in FIG. 1 or FIG. 2 may be composed of any type such as n-type, p-type or i-type.
  • AlGaN layer 4 may also be composed of any type such as n-type, p-type or i-type.
  • the present disclosure provides a group III nitride semiconductor including a GaN layer composed of Al x Ga 1-x N (0 ⁇ x ⁇ 1), an InGaN layer disposed on the GaN layer and composed of InGaN, an AlGaN layer including a dopant, the layer being disposed on the InGaN layer and composed of Al y Ga 1-y N (0 ⁇ y ⁇ 1), and a functional layer disposed on the AlGaN layer, wherein the concentration of Mg in the GaN layer is higher than the concentration of Mg in the AlGaN layer, and the concentration of the dopant in the AlGaN layer is higher than the concentration of Mg in the AlGaN layer.
  • the GaN layer preferably has a first region that is located closer to the InGaN layer and has a higher concentration of the dopant than the concentration of Mg, and a second region that is located opposite to the first region and has a lower concentration of the dopant than the concentration of Mg.
  • the dopant may also be a p-type dopant.
  • the dopant included in AlGaN layer 4 is preferably an n-type dopant.
  • the n-type dopant is preferably Si.
  • the functional layer has been described above a light-emitting diode provided with InGaN light-emitting layer 5.
  • the functional layer is not limited to such an InGaN light-emitting layer, and can be any functional layer or the like for various semiconductors.
  • One example of such semiconductors includes a power device (Embodiment 3 described below) including a channel layer as such a functional layer.
  • a power device includes a GaN layer composed of Al x Ga 1-x N (0 ⁇ x ⁇ 1), an InGaN layer disposed on the GaN layer and composed of InGaN, an AlGaN layer disposed on the InGaN layer and composed of Al y Ga 1-y N (0 ⁇ y ⁇ 1), and a channel layer as one example of a functional layer disposed on the AlGaN layer, wherein the concentration of Mg in the GaN layer is higher than the concentration of Mg in the AlGaN layer, and the concentration of the dopant in the AlGaN layer is higher than the concentration of Mg in the AlGaN layer.
  • FIG. 6 illustrates one example of an element structure of the power device according to the present Embodiment.
  • First GaN buffer layer 62 as one example of a GaN layer is disposed on ScAlMgO 4 substrate 61, and InGaN diffusion suppression layer 63 as one example of an InGaN layer is disposed thereon.
  • second GaN buffer layer 64 and AlGaN back barrier layer 65 are disposed thereon, and GaN channel layer 66 (the thickness is, for example, 0.15 ⁇ m) as one example of a functional layer is disposed thereon.
  • AlGaN barrier layer 67 (the composition of Al is, for example, 20%, and the thickness is, for example, 0.05 ⁇ m) is disposed thereon.
  • Such a stacked structure is sequentially formed by the MOCVD method as in Embodiments 1 and 2.
  • respective electrodes required for transistor operation including source electrode 601, gate electrode 602 on p-type GaN layer 68, and drain electrode 603, are disposed on AlGaN barrier layer 67.
  • GaN channel layer 66 is required to be a high-quality and high-resistivity layer having few impurities and defects, for the purpose of an enhancement in mobility of a two-dimensional electron gas. The reason is because the presence of impurities and defects in GaN channel layer 66 causes a two-dimensional electron gas to be thus scattered, thereby not allowing any desired functions to be performed. Such a presence of impurities and defects in GaN channel layer 66 also causes the problem of the occurrence of current collapse, for example, an increase in on-resistance due to capturing of any electron accelerated by the voltage stress in operation of the power device.
  • FIG. 6 illustrates the concentration of Mg between first GaN buffer layer 62 and AlGaN barrier layer 67 in the power device of the present Embodiment by a solid line.
  • the concentration of Mg is measured by the same method as described above.
  • diffusion of Mg from ScAlMgO 4 substrate 61 is suppressed in InGaN diffusion suppression layer 63.
  • Such suppression can be seen from a very lower concentration of Mg in second GaN buffer layer 64 than the concentration of Mg in first GaN buffer layer 62.
  • the power device of the present Embodiment can allow GaN channel layer 66 to be kept as a high-quality layer including no impurities and to maximally perform the function of a channel layer.
  • the concentration of each dopant is higher than the concentration of Mg diffused in the stacked structure, except for a region of first GaN buffer layer 62, in contact with ScAlMgO 4 substrate 61. Also in the power device of the present Embodiment, a second region of first GaN buffer layer 62, located closer to ScAlMgO 4 substrate 61, having the concentration of the dopant lower than the concentration of Mg, and a first region of first GaN buffer layer 62, located closer to InGaN diffusion suppression layer 63, having the concentration of the dopant higher than the concentration of Mg are formed.
  • FIG. 6 here also illustrates the concentration profile of Mg in a power device having the same structure except for no formation of InGaN diffusion suppression layer 63 (Comparative Example), by a dashed line.
  • Mg is diffused into GaN channel layer 66, resulting in degradations in characteristics, such as an increase in on-resistance.
  • Mg can be diffused from ScAlMgO 4 substrate 61 into first GaN buffer layer 62 to result in an increase in lattice constant of GaN, as in the light-emitting diodes of Embodiment 1 and Embodiment 2. Accordingly, a lattice mismatch slightly present between ScAlMgO 4 substrate 61 and a layer grown thereon (for example, GaN channel layer 66) can be reduced to result in a reduction in such distortion.
  • a typical thickness of first GaN buffer layer 62 on ScAlMgO 4 substrate 61 is here about 3 ⁇ m, and the defect density calculated from the dark spot density according to a cathode luminescence (CL) method is about 5 ⁇ 10 7 cm -2 .
  • the defect density in the case of use of a Si substrate conventionally frequently used as a substrate for power devices is 10 8 to 10 9 cm -2 . In other words, the defect density is significantly lowered in the present Embodiment as compared with the case of use of a conventional Si substrate.
  • the entire region or a partial region of AlGaN back barrier layer 65 is not necessarily doped with n-type impurities such as Si in order that the power device of the present Embodiment ensures a high withstanding pressure.
  • a main group III elemental metal constituting group III nitride is most preferably gallium (Ga), and such a main group III elemental metal may be, for example, aluminum (Al), indium (In), or thallium (Tl). Such metals may be used singly or in combinations of two or more kinds thereof.
  • the composition thereof is represented by Al s Ga t In ⁇ 1-(s+t) ⁇ N (wherein 0 ⁇ s ⁇ 1, 0 ⁇ t ⁇ 1, and s+t ⁇ 1).
  • the group III nitride semiconductor according to the present disclosure can provide a high-quality, high-reliability, and high-performance group III nitride device that has a small lattice mismatch and that is also suppressed in diffusion of impurities from a substrate to functional layers such as a light-emitting layer and a channel layer.

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
EP18877486.3A 2017-11-16 2018-10-23 Semi-conducteur au nitrure du groupe iii Pending EP3712925A4 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017220749 2017-11-16
PCT/JP2018/039367 WO2019097963A1 (fr) 2017-11-16 2018-10-23 Semi-conducteur au nitrure du groupe iii

Publications (2)

Publication Number Publication Date
EP3712925A1 true EP3712925A1 (fr) 2020-09-23
EP3712925A4 EP3712925A4 (fr) 2020-11-25

Family

ID=66537824

Family Applications (1)

Application Number Title Priority Date Filing Date
EP18877486.3A Pending EP3712925A4 (fr) 2017-11-16 2018-10-23 Semi-conducteur au nitrure du groupe iii

Country Status (6)

Country Link
US (1) US10886435B2 (fr)
EP (1) EP3712925A4 (fr)
JP (1) JP6633813B2 (fr)
KR (1) KR102553985B1 (fr)
CN (1) CN110050330B (fr)
WO (1) WO2019097963A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020248098A1 (fr) * 2019-06-10 2020-12-17 苏州晶湛半导体有限公司 Structure semi-conductrice et procédé de fabrication de structure semi-conductrice

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5693963A (en) * 1994-09-19 1997-12-02 Kabushiki Kaisha Toshiba Compound semiconductor device with nitride
JP3722426B2 (ja) * 1994-09-19 2005-11-30 株式会社東芝 化合物半導体装置
CN1160801C (zh) * 1995-11-06 2004-08-04 日亚化学工业株式会社 氮化物半导体器件
US6495867B1 (en) * 2000-07-26 2002-12-17 Axt, Inc. InGaN/AlGaN/GaN multilayer buffer for growth of GaN on sapphire
KR100664986B1 (ko) * 2004-10-29 2007-01-09 삼성전기주식회사 나노로드를 이용한 질화물계 반도체 소자 및 그 제조 방법
JP2007214378A (ja) * 2006-02-09 2007-08-23 Rohm Co Ltd 窒化物系半導体素子
JP2008251641A (ja) * 2007-03-29 2008-10-16 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体素子およびｉｉｉ族窒化物半導体素子の製造方法
WO2009057655A1 (fr) * 2007-10-29 2009-05-07 Mitsubishi Chemical Corporation Élément électroluminescent semi-conducteur et procédé pour sa fabrication
WO2012059848A2 (fr) * 2010-11-02 2012-05-10 Koninklijke Philips Electronics N.V. Dispositif électroluminescent à base de nitrure iii
JP5918749B2 (ja) * 2011-08-10 2016-05-18 日本碍子株式会社 １３族元素窒化物膜およびその積層体
JP6514915B2 (ja) 2014-02-28 2019-05-15 国立大学法人東北大学 単結晶基板の製造方法およびレーザ素子の製造方法
JP2017168783A (ja) * 2016-03-18 2017-09-21 国立大学法人東北大学 半導体装置およびその製造方法
CN107227490B (zh) * 2016-03-23 2021-06-18 松下知识产权经营株式会社 Iii族氮化物半导体及其制造方法
JP6249250B2 (ja) * 2016-03-23 2017-12-20 パナソニックＩｐマネジメント株式会社 Ｉｉｉ族窒化物半導体及びその製造方法

Also Published As

Publication number Publication date
US20200075810A1 (en) 2020-03-05
KR102553985B1 (ko) 2023-07-10
CN110050330B (zh) 2024-03-29
KR20200083369A (ko) 2020-07-08
CN110050330A (zh) 2019-07-23
EP3712925A4 (fr) 2020-11-25
WO2019097963A1 (fr) 2019-05-23
JPWO2019097963A1 (ja) 2019-11-14
US10886435B2 (en) 2021-01-05
JP6633813B2 (ja) 2020-01-22

Similar Documents

Publication Publication Date Title
US8686396B2 (en) Non-polar ultraviolet light emitting device and method for fabricating same
US8563995B2 (en) Ultraviolet light emitting diode/laser diode with nested superlattice
US8304756B2 (en) Deep ultraviolet light emitting device and method for fabricating same
US8415654B2 (en) Low resistance ultraviolet light emitting device and method of fabricating the same
KR102191213B1 (ko) 자외선 발광 소자
US8785965B2 (en) Nitride-based semiconductor light-emitting device and method for fabricating the same
US20110220867A1 (en) Superlattice free ultraviolet emitter
JP2003037289A (ja) 低駆動電圧のｉｉｉ族窒化物発光素子
JP2003229645A (ja) 量子井戸構造およびそれを用いた半導体素子ならびに半導体素子の製造方法
US11482642B2 (en) Light emitting element
JP2008263023A (ja) Ｉｉｉ−ｖ族化合物半導体の製造方法、ショットキーバリアダイオード、発光ダイオード、レーザダイオード、およびそれらの製造方法
US9224913B2 (en) Near UV light emitting device
US20120091463A1 (en) Nitride semiconductor light-emitting element and manufacturing method therefor
WO2021060538A1 (fr) Diode laser
WO2012137462A1 (fr) Élément semi-conducteur de nitrure et son procédé de production
US10886435B2 (en) Group III nitride semiconductor with InGaN diffusion blocking layer
US9564552B2 (en) Method for producing group III nitride semiconductor light-emitting device
US20120211784A1 (en) Nitride semiconductor stacked structure and method for manufacturing same and nitride semiconductor device
US20240120440A1 (en) Semiconductor structure
US11355662B2 (en) Method of manufacturing nitride semiconductor light emitting element
KR101250251B1 (ko) 전위 밀도를 감소시키기 위한 질화물 반도체 발광소자 및 그 제조 방법
KR20100109629A (ko) 발광 다이오드
US20170155016A9 (en) Nitride semiconductor crystal and method of fabricating the same
US9508895B2 (en) Group III nitride semiconductor light-emitting device and production method therefor
KR20100109166A (ko) 인듐을 포함하는 질화물계 반도체층을 가지는 발광 다이오드

Legal Events

Date Code Title Description
STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE

PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE

17P Request for examination filed

Effective date: 20200205

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

AX Request for extension of the european patent

Extension state: BA ME

A4 Supplementary search report drawn up and despatched

Effective date: 20201022

RIC1 Information provided on ipc code assigned before grant

Ipc: C30B 25/18 20060101ALI20201016BHEP

Ipc: H01L 21/205 20060101AFI20201016BHEP

Ipc: C23C 16/34 20060101ALI20201016BHEP

Ipc: H01L 33/00 20100101ALI20201016BHEP

Ipc: C23C 16/30 20060101ALI20201016BHEP

Ipc: C30B 29/38 20060101ALI20201016BHEP

DAV Request for validation of the european patent (deleted)
DAX Request for extension of the european patent (deleted)
RAP3 Party data changed (applicant data changed or rights of an application transferred)

Owner name: PANASONIC HOLDINGS CORPORATION

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: EXAMINATION IS IN PROGRESS

17Q First examination report despatched

Effective date: 20231002

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: GRANT OF PATENT IS INTENDED