EP3676581A1 - Optoelektrischer chip - Google Patents

Optoelektrischer chip

Info

Publication number
EP3676581A1
EP3676581A1 EP18753173.6A EP18753173A EP3676581A1 EP 3676581 A1 EP3676581 A1 EP 3676581A1 EP 18753173 A EP18753173 A EP 18753173A EP 3676581 A1 EP3676581 A1 EP 3676581A1
Authority
EP
European Patent Office
Prior art keywords
light
photoelectric element
filter
opto
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP18753173.6A
Other languages
German (de)
English (en)
French (fr)
Inventor
Markus Schmid
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Vc Viii Polytech Holding Aps
Original Assignee
fos4X GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by fos4X GmbH filed Critical fos4X GmbH
Publication of EP3676581A1 publication Critical patent/EP3676581A1/de
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J9/00Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J9/00Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength
    • G01J9/02Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength by interferometric methods
    • G01J9/0246Measuring optical wavelength
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/02Details
    • G01J3/0256Compact construction
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/12Generating the spectrum; Monochromators
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/12Generating the spectrum; Monochromators
    • G01J3/26Generating the spectrum; Monochromators using multiple reflection, e.g. Fabry-Perot interferometer, variable interference filters
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/12Generating the spectrum; Monochromators
    • G01J2003/1213Filters in general, e.g. dichroic, band

Definitions

  • Embodiments of the disclosure relate to an opto-electrical chip, a measuring system with an opto-electrical chip and a method for evaluating a reflection spectrum of a fiber Bragg grating which uses an opto-electrical chip.
  • spectral properties of optical elements eg. B. influenced by optical gratings such as fiber Bragg gratings, and it is evaluated the spectral properties of the light, which has been subjected to such influence.
  • the spectral properties of the light include, for example, a wavelength-dependent intensity minimum or maximum.
  • Optoelectronic chips are known, on or in which optical elements and electrical or electronic elements in the form of a mixed optical and electrical system are arranged and interconnected, typically on or in a common wafer for the respective optical and electrical components. electronic elements.
  • Fig. 4 shows an example of a conventional opto-electric chip 101.
  • an optical waveguide 110 is inserted, the inserted end of which forms a light entrance opening 111 for incoming light 150.
  • the incoming light 150 is, for example, light which has been changed in its propagation path from a light source (not shown) to the light entrance opening 111 in its spectral properties, with some or all further elements of the chip 101 serving to measure spectral properties or spectral property changes of interest.
  • a wavelength-related maximum of the intensity of the incoming light 150 has been affected by a fiber Bragg grating (not shown) formed in the optical fiber 110.
  • the light 150 which has entered the chip 101 is split in a beam splitter 120 into a first light component 151 and a second light component 152.
  • the first light portion 151 Then, in transmission, an optical filter 130, which performs a wavelength-dependent filtering of the light, occurs.
  • the filtered light 153 exiting the optical filter 130 strikes a filter photodiode 140 where it generates an electrical measurement signal according to its intensity.
  • the second light portion 152 strikes a reference photodiode 160 and generates there an electrical reference signal according to its intensity.
  • the second light portion 152 is unfiltered.
  • the value of the measurement signal is divided by the value of the reference signal, for example in an evaluation circuit (not shown).
  • a calibration model of the optical filter 130 can be used to deduce the wavelength of the fiber Bragg grating in the optical waveguide 110 from the quotient thus obtained.
  • the opto-electrical chip 101 is constructed relatively complex, inter alia, by the beam splitter 120, and the sensitivity is low by the beam splitter 120.
  • a solution is desirable in which the complexity of an opto-electrical chip 101 is reduced and / or the sensitivity is improved.
  • Embodiments of the present disclosure provide an opto-electrical chip having the features of claim 1. Further, embodiments of the present disclosure provide a measuring system having the features of claim 8 using an opto-electrical chip disclosed herein. Further, embodiments of the present disclosure provide a method of evaluating a reflection spectrum of a fiber Bragg grating having the features of claim 9, in which method an opto-electrical chip disclosed herein is used.
  • an opto-electrical chip comprising: a light entrance aperture; a wavelength-sensitive optical filter; a first photoelectric element for measuring a first light intensity, in particular a first photo diode, the first photoelectric element being arranged such that light entering the optoelectrical chip through the light inlet opening and which transmits the filter strikes the first photoelectric element; and a second photoelectric element for measuring a second light intensity, in particular a second photodiode, wherein the second photoelectric element is arranged such that through the Light entrance opening into the opto-electric chip entering light, which is reflected at the filter, meets the second photoelectric element.
  • a measuring system disclosed herein comprises an opto-electrical chip described herein and an optical waveguide coupled to the light entrance aperture, wherein the optical waveguide comprises at least one fiber Bragg grating.
  • a method disclosed herein of evaluating a reflection spectrum of a fiber Bragg grating wherein the fiber Bragg grating is provided in an optical waveguide, and wherein an end of the optical waveguide is inserted into the light entrance aperture of an optoelectric chip described herein Measuring a transmission intensity of the light incident through the light entrance opening and passing through the optical filter with the first photoelectric element; Measuring a reflection intensity of the light incident through the light entrance opening and reflected on the optical filter with the second photoelectric element; Dividing the transmission intensity by the reflection intensity to obtain a ratio value; and relating the ratio value to a model of the optical filter to obtain a value related to the reflection spectrum.
  • the filter element d. H.
  • the wavelength-sensitive optical filter is therefore used both in transmission and in reflection.
  • the light reflected at the filter element is used directly to measure a reference intensity.
  • the filter surface thus acts as a beam splitter.
  • the incident through the sunken through the light inlet opening and the optical filter light passed together with the sunken through the light inlet opening and reflected at the optical filter light is subject to conservation of energy.
  • the efficiency of the optoelectric chip described herein is doubled over a conventional optoelectric chip.
  • the saved beam splitter also reduces manufacturing costs, such as the cost of materials and any labor costs in the production of the chip.
  • the transfer function with respect to the wavelength present on the first photoelectric element is applied in a wavelength-inverse manner to the second photoelectric element.
  • the optical filter is a wavelength-sensitive transmission filter or edge filter.
  • a reflection surface of the optical filter is inclined relative to the propagation direction of the light entering through the light entrance opening into the opto-electrical chip light, in particular in an angular range of 10 ° to 80 ° with respect inclined to a vertical orientation of the reflection surface with respect to the propagation direction.
  • An inclination of the reflection surface of the optical filter can make it possible to arrange the second photoelectric element to save space in or on the opto-electrical chip, for example, adjacent to an inserted optical waveguide.
  • the light path from the light inlet opening to the filter, the light path from the filter to the first photoelectric element and the light path from the filter to the second photoelectric element are each free of further optical elements.
  • the intensity of the light, whose spectral properties are evaluated in the opto-electrical chip, is thus not subjected to appreciable attenuation, as is the case, for example, with a separately provided beam splitter. This can improve the sensitivity.
  • the opto-electrical chip further comprises an evaluation circuit.
  • the evaluation circuit is supplied with a first measurement signal from the first photoelectric element and a second measurement signal from the second photoelectric element.
  • the respective values of the measurement signals are related to the respective measured light intensities.
  • the evaluation circuit is configured to divide the value of the first measurement signal by the value of the second measurement signal to obtain a ratio value.
  • An evaluation circuit which is integrated with the optoelectronic chip can contribute to a further simplification and / or compaction in an optoelectrical measuring system.
  • the evaluation circuit is configured to relate the ratio value to a model of the optical filter to obtain a value related to a spectrum of the light entering through the light entry port.
  • the value indicates a frequency-dependent intensity maximum or an intensity minimum of the light entering through the light inlet opening.
  • the model of the optical filter is typically a model that is suitable for calibration purposes of the filter.
  • a calibration model of the optical filter typically includes a look-up table. With the ratio value can z. B. be deduced to a wavelength or wavelength shift of a fiber Bragg grating, which is formed in the optical waveguide.
  • Fig. 1 is a schematic representation of an opto-electrical chip according to an embodiment, with inserted optical waveguide;
  • FIG. 2 is a block diagram of an opto-electrical chip according to an embodiment, which further includes an evaluation circuit;
  • FIG. 3 is a flowchart of a method for evaluating a reflection spectrum of a fiber Bragg grating according to an embodiment
  • Fig. 4 is a schematic representation of a conventional opto-electrical chip.
  • Fig. 1 shows a schematic representation of an opto-electrical chip, which is generally designated 1, according to one embodiment.
  • the optoelectric chip 1 one end of an optical waveguide 10 is inserted, and the chip 1 and the optical waveguide 10th together form a measuring system with which, for example, a reflection spectrum of a (not shown) fiber Bragg grating can be evaluated, which is formed in the optical waveguide 10.
  • An end face of the inserted end of the optical waveguide 10 is for coupling light into the opto-electric chip 1.
  • this end face constitutes a light entrance opening 11 for light 50 entering the opto-electric chip 1.
  • the chip 1 forms insofar an opto-electric free-jet system.
  • the incoming light 50 propagates along a direction of propagation A and impinges on an optical transmission filter 20, which is wavelength-sensitive and transmits only certain spectral components of the light 50 as transmitted light 51.
  • the non-transmitted portion of the light 50 is reflected on a reflection surface 21 of the optical filter 20.
  • At least the reflection surface 21 of the optical filter 20 is inclined relative to the propagation direction A.
  • An example of an angle range of the inclination angle ⁇ of the reflection surface 21 is a range between 10 ° and 80 °.
  • the transmitted light 51 impinges on a first photoelectric element 30, which is formed for example as a first photodiode.
  • a first photoelectric element 30 include a phototransistor or other photosensitive semiconductor device.
  • the transmitted light 51 generates in the first photoelectric element 30 an electrical signal corresponding to the intensity.
  • the electrical signal is - possibly amplified - output from the first photoelectric element 30 as a first measurement signal 61, as will be explained with reference to FIG. 2.
  • the reflected light 52 strikes a second photoelectric element 40, which in turn is formed, for example, as a second photodiode. Also include here other examples of a second photoelectric element 40 include a phototransistor or other photosensitive semiconductor device. Again, the reflected light 52 generates an electrical signal, here in the second photoelectric element 40, corresponding to the intensity of the reflected light 52. The electrical signal is - possibly amplified - output from the second photoelectric element 40 as a second measurement signal 62, as below Referring to Fig. 2 will be explained.
  • the light path between the light entrance opening 11 and the filter 20 is free of optical elements.
  • the light path between the filter 20 and the first photoelectric element 30 is free of optical elements.
  • the light path between the filter 20, more specifically, between the reflection surface 21 and the second photoelectric element 40 is free of optical elements.
  • the entered light 50, the transmitted light 51 and the reflected light 52 thus propagate uninfluenced.
  • the intensity is influenced by the filter 20, which also acts as a beam splitter. Further influencing by optical elements, with the exception of a medium-dependent attenuation during propagation, does not take place.
  • the transmission function with respect to the wavelength at the first photoelectric element 30 is applied to the second photoelectric element 40 in a wavelength-inverse manner by the reflection at the filter 20.
  • Fig. 2 shows a block diagram of an opto-electrical chip 1, in which additionally an evaluation circuit 60 is integrated.
  • the evaluation circuit 60 is supplied with the first measurement signal 61 from the first photoelectric element 30 and the second measurement signal 62 from the second photoelectric element 40.
  • the evaluation circuit 60 divides the value of the first measurement signal 61 by the value of the second measurement signal 62.
  • the second measurement signal 62 serves as the reference signal.
  • the quotient thus obtained is a ratio 63.
  • the ratio 63 can be output directly as shown in FIG.
  • the ratio value 63 may also be used internally in the evaluation circuit 60 to refer the ratio value 63 to a model of the filter 20 to obtain a value related to a spectrum of the light 50 entering through the light entrance opening 11.
  • the model of the filter 20 is a calibration model.
  • the value thus obtained may, for. B. directly or indirectly the wavelength of the fiber Bragg grating in the optical waveguide 10 indicate. This value can be output, for example, additionally or alternatively to the ratio 63.
  • the ratio 63 results in an improved signal-to-noise ratio compared to the conventional chip 101.
  • Fig. 3 shows a flow chart for a method for evaluating a reflection spectrum of a fiber Bragg grating, wherein the fiber Bragg grating is provided in an optical waveguide 10, and wherein one end of the optical waveguide optically to the light entrance opening 11th of the opto-electrical chip 1 according to an embodiment described herein, for example, is introduced.
  • a transmission intensity of the light 50 incident through the light entry opening is first measured in 1001, which has passed through the optical filter 20 and impinges on the first photoelectric element 30 as transmitted light 51.
  • a reflection intensity of the light 50 incident through the light entrance opening 50 which has been reflected on the reflection surface 21 of the optical filter 20 and impinges on the second photoelectric element 40 as reflected light 52 is measured.
  • the transmission intensity is divided by the reflection intensity to obtain a ratio value.
  • the ratio value is related to a model of the optical filter 20 to obtain a value related to the reflection spectrum.

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Optical Integrated Circuits (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Spectrometry And Color Measurement (AREA)
  • Light Receiving Elements (AREA)
EP18753173.6A 2017-08-29 2018-08-10 Optoelektrischer chip Pending EP3676581A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102017119810.5A DE102017119810B4 (de) 2017-08-29 2017-08-29 Optoelektrischer Chip
PCT/EP2018/071790 WO2019042748A1 (de) 2017-08-29 2018-08-10 Optoelektrischer chip

Publications (1)

Publication Number Publication Date
EP3676581A1 true EP3676581A1 (de) 2020-07-08

Family

ID=63168433

Family Applications (1)

Application Number Title Priority Date Filing Date
EP18753173.6A Pending EP3676581A1 (de) 2017-08-29 2018-08-10 Optoelektrischer chip

Country Status (5)

Country Link
US (1) US11237060B2 (zh)
EP (1) EP3676581A1 (zh)
CN (1) CN111051829B (zh)
DE (1) DE102017119810B4 (zh)
WO (1) WO2019042748A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102019123468B3 (de) 2019-09-02 2021-01-07 Fisens Gmbh Vorrichtung für optische Anwendungen
WO2023213851A1 (de) 2022-05-04 2023-11-09 Gts Deutschland Gmbh Messverfahren zur erfassung von einer auf einen gegenstand einwirkenden mechanischen kraft, messvorrichtung mit faseroptischer sensoreinheit

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Also Published As

Publication number Publication date
US20200300709A1 (en) 2020-09-24
DE102017119810B4 (de) 2019-05-09
CN111051829A (zh) 2020-04-21
DE102017119810A1 (de) 2019-02-28
US11237060B2 (en) 2022-02-01
CN111051829B (zh) 2022-12-27
WO2019042748A1 (de) 2019-03-07

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