EP3596757A1 - Transistor à effet de champ, son procédé de production, élément d'affichage, dispositif d'affichage, et système - Google Patents

Transistor à effet de champ, son procédé de production, élément d'affichage, dispositif d'affichage, et système

Info

Publication number
EP3596757A1
EP3596757A1 EP18714869.7A EP18714869A EP3596757A1 EP 3596757 A1 EP3596757 A1 EP 3596757A1 EP 18714869 A EP18714869 A EP 18714869A EP 3596757 A1 EP3596757 A1 EP 3596757A1
Authority
EP
European Patent Office
Prior art keywords
effect transistor
field
insulating film
gate insulating
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP18714869.7A
Other languages
German (de)
English (en)
Inventor
Sadanori ARAE
Yuichi Ando
Yuki Nakamura
Yukiko Abe
Shinji Matsumoto
Yuji Sone
Naoyuki Ueda
Ryoichi SAOTOME
Minehide KUSAYANAGI
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority claimed from PCT/JP2018/010350 external-priority patent/WO2018169024A1/fr
Publication of EP3596757A1 publication Critical patent/EP3596757A1/fr
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1251—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs

Definitions

  • the disclosures herein generally relate to a field-effect transistor, a method for producing the same, a display element, a display device, and a system.
  • FETs Field-effect transistors
  • the field-effect transistors have a low gate current and a flat structure. Therefore, the FETs can be easily produced and can also be easily integrated as compared to bipolar transistors. For these reasons, the field-effect transistors are widely used in integrated circuits used in existing electronic devices.
  • field-effect transistors silicon, oxide semiconductors, and organic semiconductors are used for semiconductor films.
  • Examples of such field-effect transistors include a field-effect transistor using an oxide semiconductor film with a self-aligned structure.
  • the field-effect transistor has a structure in which a semiconductor film is covered by an interlayer insulating layer, contact holes are formed in the interlayer insulating layer, and a source electrode and a drain electrode formed on the insulating layer are connected to a source region and a drain region through the contact holes.
  • the oxide semiconductor film of the field-effect transistor is provided with a channel forming region and a low resistance region that has lower resistance than that of the channel forming region. Further, an impurity region is formed between the channel forming region and the low resistance region (see Patent Document 1, for example).
  • the structure of the above-described field-effect transistor is required to allow for variations in positions where contact holes, a source electrode, and a drain electrode are formed. Therefore, the structure of the above-described field-effect transistor is not suitable for miniaturization. Further, given that the impurity region is formed between the channel forming region and the low resistance region, the above-described field-effect transistor is not suitable for miniaturization.
  • a field-effect transistor includes a semiconductor film formed on a base, a gate insulating film formed on a part of the semiconductor film, a gate electrode formed on the gate insulating film, and a source electrode and a drain electrode formed in contact with the semiconductor film, wherein a thickness of the source electrode and the drain electrode is smaller than a thickness of the gate insulating film, and the gate insulating film includes a region that is not in contact with the source electrode or the drain electrode.
  • a field-effect transistor can be miniaturized.
  • FIG. 1A is a diagram illustrating a field-effect transistor of a first embodiment
  • FIG. 1B is a diagram illustrating the field-effect transistor of the first embodiment
  • FIG. 2A is a diagram (part 1) illustrating a process for producing the field-effect transistor of the first embodiment
  • FIG. 2B is a diagram (part 1) illustrating a process for producing the field-effect transistor of the first embodiment
  • FIG. 2C is a diagram (part 1) illustrating a process for producing the field-effect transistor of the first embodiment
  • FIG. 2D is a diagram (part 1) illustrating a process for producing the field-effect transistor of the first embodiment
  • FIG. 3A is a diagram (part 2) illustrating a process for producing the field-effect transistor of the first embodiment
  • FIG. 1A is a diagram illustrating a field-effect transistor of a first embodiment
  • FIG. 1B is a diagram illustrating the field-effect transistor of the first embodiment
  • FIG. 2A is a diagram (part 1) illustrating a process for producing the field-
  • FIG. 3B is a diagram (part 2) illustrating a process for producing the field-effect transistor of the first embodiment
  • FIG. 3C is a diagram (part 2) illustrating a process for producing the field-effect transistor of the first embodiment
  • FIG. 4 is a cross-sectional view illustrating a field-effect transistor of a second embodiment
  • FIG. 5 is a cross-sectional view illustrating a field-effect transistor of a third embodiment
  • FIG. 6A is a diagram illustrating a process for producing the field-effect transistor of the third embodiment
  • FIG. 6B is a diagram illustrating a process for producing the field-effect transistor of the third embodiment
  • FIG. 6C is a diagram illustrating a process for producing the field-effect transistor of the third embodiment
  • FIG. 7 is a cross-sectional view illustrating a field-effect transistor of a fourth embodiment
  • FIG. 8A is a diagram illustrating a process for producing the field-effect transistor of the fourth embodiment
  • FIG. 8B is a diagram illustrating a process for producing the field-effect transistor of the fourth embodiment
  • FIG. 8C is a diagram illustrating a process for producing the field-effect transistor of the fourth embodiment
  • FIG. 8D is a diagram illustrating a process for producing the field-effect transistor of the fourth embodiment
  • FIG. 9 is a cross-sectional view illustrating a field-effect transistor of a fifth embodiment
  • FIG. 10 is a cross-sectional view illustrating a field-effect transistor of a sixth embodiment
  • FIG. 11 is a diagram illustrating characteristics of a field-effect transistor produced in Example 1;
  • FIG. 12 is a block diagram illustrating a configuration of a television apparatus of a seventh embodiment;
  • FIG. 13 is an explanatory diagram (part 1) of the television apparatus of the seventh embodiment;
  • FIG. 14 is an explanatory diagram (part 2) of the television apparatus of the seventh embodiment;
  • FIG. 15 is an explanatory diagram (part 3) of the television apparatus of the seventh embodiment;
  • FIG. 16 is an explanatory diagram of a display element of the seventh embodiment;
  • FIG. 17 is an explanatory diagram of an organic electroluminescent (EL) element of the seventh embodiment;
  • FIG. 18 is an explanatory diagram (part 4) of the television apparatus of the seventh embodiment;
  • FIG. 19 is an explanatory diagram (part 1) of another display element of the seventh embodiment;
  • FIG. 20 is an explanatory diagram (part 2) of the another display element of the seventh embodiment.
  • FIGS. 1A and 1B are diagrams illustrating a field-effect transistor of a first embodiment.
  • FIG. 1A is a cross-sectional view and FIG. 1B is a plan view.
  • FIG. 1A illustrates a vertical sectional view taken along line A-A of FIG. 1B.
  • some elements illustrated in the plan view of FIG. 1B are indicated by the same hatching as that used in the cross-sectional view of FIG. 1A.
  • a field-effect transistor 10 is a top-gate/top-contact field-effect transistor that includes a base 11, a semiconductor film 12, a gate insulating film 13, a gate electrode 14, a source electrode 15, a drain electrode 16, and a gate electrode covering layer 17.
  • the field-effect transistor 10 may be a top-gate/bottom-contact field-effect transistor.
  • the field-effect transistor 10 is a typical example of a semiconductor device.
  • the gate electrode covering layer 17 side is represented as an upper side or one side
  • the base 11 side is represented as a lower side or the other side
  • a surface of the respective elements on the gate electrode covering layer 17 side is represented as an upper surface or one surface
  • a surface of the respective elements on the base 11 side is represented as a lower surface or the other surface.
  • the field-effect transistor 10 can be used upside down or can be disposed at any angle.
  • a plan view refers to viewing an object from an upper surface of the base 11 in a normal direction (z-axis direction).
  • a planar shape refers to a shape of an object when viewed from the upper surface of the base 11 in the normal direction (z-axis direction).
  • a vertical section refers to a cross section of the respective elements on the base 11 taken in a lamination direction.
  • a transverse section refers to a cross section of the respective elements on the base 11 taken in a direction perpendicular to the lamination direction (direction parallel to the upper surface of the base 11).
  • the semiconductor film 12 is formed in a predetermined region on the insulating base 11.
  • the gate insulating film 13 is formed in a predetermined region on the semiconductor film 12.
  • the gate electrode 14 having the same pattern as that of the gate insulating film 13 is formed on the gate insulating film 13.
  • the source electrode 15 and the drain electrode 16 covering the base 11 and the semiconductor film 12 are formed with the gate insulating film 13 being interposed between the source electrode 15 and the drain electrode 16, such that a channel is formed in the semiconductor film 12.
  • the gate electrode covering layer 17 is formed on the gate electrode 14.
  • the same pattern as that of the gate insulating film refers to a pattern in which the gate electrode substantially overlaps the gate insulating film in a plan view.
  • substantially overlapping includes, of course, a case in which the gate insulating film and the gate electrode have the same shape, and also includes, as will be described below, a case in which an outer edge portion of an lower surface of the gate electrode protrudes a few hundred nm from the periphery of an upper surface of the gate insulating film and a case in which an outer edge portion of the upper surface of the gate insulating film protrudes a few hundred nm from the periphery of the lower surface of the gate electrode, for example.
  • the respective elements of the field-effect transistor 10 will be described in detail.
  • the base 11 is an insulating member on which the semiconductor film 12 is formed.
  • a shape, a structure, and a size of the base 11 are not particularly limited and may be appropriately selected depending on the purpose.
  • the planar shape of the base 11 is formed in an approximately square shape.
  • a material of the base 11 is not particularly limited and may be appropriately selected depending on the purpose.
  • a glass base a plastic base, and the like may be used.
  • the glass base is not particularly limited and may be appropriately selected depending on the purpose. Examples of the glass base include non-alkali glass and silica glass.
  • the plastic base is not particularly limited and may be appropriately selected depending on the purpose.
  • examples of the plastic base include polycarbonate (PC), polyimide (PI), polyethylene terephthalate (PET), and polyethylene naphthalate (PEN).
  • the semiconductor film 12 is formed in a predetermined region of the base 11.
  • a shape, a structure, and a size of the semiconductor film 12 are not particularly limited and may be appropriately selected depending on the purpose.
  • the planar shape of the semiconductor film 12 is formed in a rectangular shape, with the longer side being in the x-axis direction.
  • the semiconductor film 12 located between the source electrode 15 and the drain electrode 16 serves as a channel region.
  • An average thickness of the semiconductor film 12 is not particularly limited and may be appropriately selected depending on the purpose, but is preferably 5 nm to 1 ⁇ m and more preferably 10 nm to 0.5 ⁇ m.
  • a material of the semiconductor film 12 is not particularly limited and may be appropriately selected depending on the purpose.
  • the material include organic semiconductors such as polycrystalline silicon (p-Si), amorphous silicon (a-Si), an oxide semiconductor, and pentacene. Of them, an oxide semiconductor is preferably used in terms of stability of an interface with the gate insulating film 13.
  • an n-type oxide semiconductor can be used as an oxide semiconductor constituting the semiconductor film 12.
  • the n-type oxide semiconductor is not particularly limited and may be appropriately selected depending on the purpose.
  • the n-type oxide semiconductor includes at least any one of indium (In), Zn, tin (Sn), and Ti, and also includes an alkaline earth element or a rare earth element.
  • the n-type oxide semiconductor includes In and also includes an alkaline earth element or a rare earth element.
  • alkaline earth element examples include beryllium (Be), magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), and radium (Ra).
  • rare earth element examples include scandium (Sc), yttrium (Y), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), and lutetium(Lu).
  • An electron carrier density of indium oxide changes by approximately 10 18 cm -3 to 10 20 cm -3 depending on the amount of oxygen defects.
  • the indium oxide tends to have oxygen defects. Therefore, unintentional oxygen defects may be produced during a post-process after a semiconductor film containing an oxide is formed.
  • the oxide is preferably formed mainly of two metals that are indium and an alkaline earth element or a rare earth element, both of which are easier to bond with oxygen than indium. This makes it possible to easily control a composition while preventing unintentional oxygen defects from being produced. Accordingly, the electron carrier density can also be properly controlled.
  • the n-type oxide semiconductor constituting the semiconductor film 12 undergoes substitutional doping with at least one dopant selected from a divalent cation, a trivalent cation, a tetravalent cation, a pentavalent cation, a hexavalent cation, a heptavalent cation, and an octavalent cation.
  • a valence of the dopant may be greater than a valence of a metal ion (other than the dopant) constituting the n-type oxide semiconductor.
  • substitutional doping is also referred to as n-type doping.
  • the gate insulating film 13 is provided between a part of semiconductor film 12 and the gate electrode 14.
  • the gate insulating film 13 includes a region that is not in contact with the source electrode 15 or the drain electrode 16.
  • a shape, a structure, and a size of the gate insulating film 13 are not particularly limited and may be appropriately selected depending on the purpose.
  • the planar shape of the gate insulating film 13 is formed in a rectangular shape, with the longer side being in the y-axis direction.
  • a part of the gate insulating film 13 extends from an upper surface of the semiconductor film 12 in the y-axis direction and is formed directly on the base 11.
  • the gate insulating film 13 is a layer for insulating the gate electrode 14, the semiconductor film 12, the source electrode 15, and the drain electrode 16 from one another.
  • An average thickness of the gate insulating film 13 is not particularly limited and may be appropriately selected depending on the purpose, but is preferably 50 nm to 1000 nm and more preferably 100 nm to 500 nm.
  • the gate insulating film 13 is an oxide film.
  • the oxide film contains a Group A element that is an alkaline earth metal and a Group B element that is at least one of gallium (Ga), scandium (Sc), yttrium (Y), and a lanthanoid.
  • the oxide film preferably contains a Group C element that is at least one of Zr (zirconium) and Hf (hafnium), and further contains other components as necessary.
  • the oxide film may include one alkaline earth metal element or may include two or more alkaline earth metal elements.
  • Examples of a lanthanoid include lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), and lutetium (Lu).
  • La lanthanum
  • Ce cerium
  • Pr praseodymium
  • Nd neodymium
  • promethium Pm
  • Sm samarium
  • Eu europium
  • Gd gadolinium
  • Tb terbium
  • Dy dysprosium
  • Ho holmium
  • Er erbium
  • Tm thulium
  • Yb ytterbium
  • Lu lutetium
  • the oxide film contains a paraelectric amorphous oxide or is preferably formed of a paraelectric amorphous oxide.
  • a paraelectric amorphous oxide is stable in the atmosphere and can stably form an amorphous structure in a wide range of compositions.
  • a crystal may be included in a part of the oxide film.
  • Alkaline earth oxides tend to react with moisture or carbon dioxide in the atmosphere and are easily converted into hydroxides or carbonates. Therefore, such alkaline earth oxides alone are not suitable for use in electronic devices. Further, simple oxides such as of lanthanoids excluding Ga, Sc, Y, and Ce tend to be crystallized and cause a leakage current. However, oxides containing an alkaline earth metal and a lanthanoid excluding Ga, Sc, Y, and Ce are stable in the atmosphere and can form an amorphous film in a wide range of compositions. Among lanthanoid elements, Ce specifically becomes tetravalent, and forms a crystal having a perovskite structure together with the alkaline earth metal. Therefore, in order to obtain an amorphous phase, a lanthanoid excluding Ce is desired.
  • Crystalline phases such as a spinel structure exist for oxides containing an alkaline earth metal and Ga. However, these crystals are not precipitated unless the temperature is significantly high (generally, at 1,000°C or more), as compared to crystals having a perovskite structure. Also, no report has been presented regarding a stable crystalline phase for oxides containing an alkaline earth metal and a lanthanoid excluding Sc, Y, and Ce. Crystals are rarely precipitated from the amorphous phase even after the post-process at a high temperature. In addition, an amorphous phase becomes more stable when the oxides containing the alkaline earth metal and a lanthanoid excluding Ga, Sc, Y, and Ce are formed of three of more metal elements.
  • the content of each element included in the oxide film is not specifically limited.
  • the oxide film preferably includes metal elements selected from respective element groups so as to form a composition that can maintain a stable amorphous state.
  • composition ratios of elements such as Ba, Sr, Lu, and La are preferably increased.
  • a dielectric constant of the oxide film of the present embodiment is generally approximately 6 to 20 and is sufficiently high as compared to that of SiO 2 .
  • the dielectric constant can be adjusted to an appropriate value according to purpose of use.
  • a coefficient of thermal expansion for the oxide film of the present embodiment is equivalent to a coefficient of thermal expansion for a general wiring material or a semiconductor material, which is 10 -6 to 10 -5 . Therefore, as compared to SiO 2 having a coefficient of thermal expansion of 10 -7 , the oxide film of the present embodiment rarely has problems such as a peeling of a film even after a heating process is repeatedly performed. In particular, with oxide semiconductors such as a-IGZO, a favorable interface is formed.
  • a high-performance semiconductor device can be provided by using the oxide film of the present embodiment.
  • the gate insulating film 13 is not limited to the oxide film that contains at least a Group A element and a Group B element and preferably contains a Group C element.
  • the gate insulating film 13 may be an oxide film that contains Si and an alkaline earth metal.
  • the gate insulating film 13 may be a film formed of SiO 2 , SiN, SiON, or Al 2 O 3 , for example.
  • the gate electrode 14 is formed on the gate insulating film 13.
  • the gate electrode 14 is an electrode that applies a gate voltage.
  • the gate electrode 14 is disposed facing the semiconductor film 12 with the gate insulating film 13 being interposed therebetween.
  • a shape, a structure, and a size of the gate electrode 14 are not particularly limited and may be appropriately selected depending on the purpose.
  • the planar shape of the gate insulating film 13 is formed in a rectangular shape, with the longer side being in the y-axis direction.
  • the gate electrode 14 substantially overlaps the gate insulating film 13 in a plan view.
  • a material of the gate electrode 14 is not particularly limited and may be appropriately selected depending on the purpose.
  • the material include metals such as aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), silver (Ag), copper (Cu), zinc (Zn), nickel (Ni), chromium (Cr), tantalum (Ta), molybdenum (Mo), and titanium (Ti), alloys thereof, and mixtures of these metals.
  • examples of the material of the gate electrode 14 include conductive oxides such as indium oxide, zinc oxide, tin oxide, gallium oxide, and niobium oxide, complex compounds thereof, and mixtures thereof. Also, organic conductors such as polyethylene dioxythiophene (PEDOT) and polyaniline (PANI) may be used.
  • An average thickness of the gate electrode 14 is not particularly limited and may be appropriately selected depending on the purpose, but is preferably 10 nm to 1 ⁇ m and more preferably 50 nm to 300 nm.
  • the source electrode 15 and the drain electrode 16 are formed on the base 11 and are in contact with the semiconductor film 12.
  • the source electrode 15 and the drain electrode 16 are formed to cover a part of the semiconductor film 12, and are formed spaced apart a predetermined distance from each other, which serves as a channel region.
  • the source electrode 15 and the drain electrode 16 are electrodes that cause an electric current to flow when a gate voltage is applied to the gate electrode 14.
  • Shapes, structures, and sizes of the source electrode 15 and the drain electrode 16 are not particularly limited and may be appropriately selected depending on the purpose.
  • the planar shapes of the source electrode 15 and the drain electrode 16 are formed in rectangular shapes, with the longer sides being in the x-axis direction.
  • Source electrode 15 and the drain electrode 16 are not particularly limited and may be appropriately selected depending on the purpose.
  • the material include metals such as aluminum, gold, platinum, palladium, silver, copper, zinc, nickel, chromium, tantalum, molybdenum, and titanium, alloys thereof, and mixtures of these metals.
  • conductive oxides such as indium oxide, zinc oxide, tin oxide, gallium oxide, and niobium oxide, complex compounds thereof, and mixtures thereof may be used.
  • the source electrode 15 and the drain electrode 16 may use a laminated structure of these materials.
  • An average thickness of the source electrode 15 and the drain electrode 16 is not particularly limited and may be appropriately selected depending on the purpose. However, the average thickness of the source electrode 15 and of the drain electrode 16 are formed smaller than the average thickness of the gate insulating film 13.
  • the gate electrode covering layer 17 is formed in a predetermined region on the gate electrode 14.
  • the gate electrode covering layer 17 is formed in contact with the gate electrode 14 without making contact with other elements constituting the field-effect transistor 10 including the source electrode 15 and the drain electrode 16.
  • the gate electrode covering layer 17 is a layer formed of the same material as that of the source electrode 15 and the drain electrode 16, and has nearly the same thickness as that of the source electrode 15 and the drain electrode 16.
  • a combined planar shape of the source electrode 15, the drain electrode 16, and the gate electrode covering layer 17 are formed in a rectangular shape, with the longer side being in the x-axis direction. However, the source electrode 15, the drain electrode 16, and the gate electrode covering layer 17 are spaced apart from one another and are not electrically connected to one another.
  • FIGS. 2A through 2D and FIG. 3A through 3C are diagrams illustrating a process for producing the field-effect transistor of the first embodiment.
  • the base 11, which is a glass base, for example, is prepared.
  • the semiconductor film 12 is formed on the entire surface of the base 11.
  • the material and the thickness of the base 11 can be appropriately selected as described above.
  • pretreatments such as oxygen plasma, UV ozone, and UV radiation cleaning are preferably performed.
  • a method for forming the semiconductor film 12 is not particularly limited and may be appropriately selected depending on the purpose.
  • Examples of the method for forming the film include a vacuum process such as a sputtering method, a pulse laser deposition (PLD) method, a chemical vapor deposition (CVD) method, and an atomic layer deposition (ALD) method, and also include a solution process such as a dip coating method, a spin coating method, and a die coating method.
  • PLD pulse laser deposition
  • CVD chemical vapor deposition
  • ALD atomic layer deposition
  • the material and the thickness of the semiconductor film 12 can be appropriately selected as described above.
  • a resist made of a photosensitive resin is formed on the entire surface of the semiconductor film 12 and is subjected to an exposure and development process (photolithography process). As a result, a resist layer 300 (an etching mask) covering a predetermined region on the semiconductor film 12 is formed.
  • a region of the semiconductor film 12 that is not covered by the resist layer 300 is removed by etching.
  • the semiconductor film 12 can be removed by wet etching.
  • the gate insulating film 13 and the gate electrode 14, which cover the semiconductor film 12, are sequentially laminated over the entire surface of the base 11.
  • a method for forming the gate insulating film 13 is not particularly limited and may be appropriately selected depending on the purpose.
  • the method for forming the film include a vacuum process such as a sputtering method, a pulse laser deposition (PLD) method, a chemical vapor deposition (CVD) method, and an atomic layer deposition (ALD) method, and also include a solution process such as a dip coating method, a spin coating method, and a die coating method.
  • PLD pulse laser deposition
  • CVD chemical vapor deposition
  • ALD atomic layer deposition
  • the material and the thickness of the gate insulating film 13 can be appropriately selected as described above.
  • a method for forming the gate electrode 14 is not particularly limited and may be appropriately selected depending on the purpose. Examples include a vacuum process such as a sputtering method, a pulse laser deposition (PLD) method, a chemical vapor deposition (CVD) method, and an atomic layer deposition (ALD) method, and also include a solution process such as a dip coating method, a spin coating method, and a die coating method.
  • a vacuum process such as a sputtering method, a pulse laser deposition (PLD) method, a chemical vapor deposition (CVD) method, and an atomic layer deposition (ALD) method
  • PLD pulse laser deposition
  • CVD chemical vapor deposition
  • ALD atomic layer deposition
  • the material and the thickness of the gate electrode 14 can be appropriately selected as described above.
  • a resist made of a photosensitive resin is formed on the entire surface of the gate electrode 14 and is subjected to the exposure and development process (photolithography process). As a result, a resist layer 310 (an etching mask) covering a predetermined region on the gate electrode 14 is formed.
  • a region of the gate electrode 14 that is not covered by the resist layer 310 is removed by etching. Subsequently, a region of the gate insulating film 13 that is not covered by the resist layer 310 is removed by etching.
  • the gate electrode 14 when the gate electrode 14 is formed of Al, Mo, or an alloy containing one of Al and Mo, the gate electrode 14 can be etched by using a PAN (phosphoric-acetic-nitric-acid) based etching solution.
  • the PAN-based etching solution is a mixed solution of phosphoric acid, nitric acid, and acetic acid.
  • the gate insulating film 13 is an oxide film containing at least the above-described Group A element and the Group B element
  • the gate insulating film 13 can be etched by using an etching solution containing at least any one of hydrochloric acid, oxalic acid, nitric acid, phosphoric acid, acetic acid, sulfuric acid, and hydrogen peroxide.
  • the gate insulating film 13 is an oxide film containing Si
  • the gate insulating film 13 can be etched by using an etching solution containing at least any one of hydrofluoric acid, ammonium fluoride, hydrogen fluoride ammonium, and organic alkali.
  • the resist layer 310 has an etching resistance to PAN-based etching solutions.
  • the gate electrode 14 and the gate insulating film 13 can be etched by performing a single mask production process (namely, a process for forming the resist layer 310) only.
  • etching can be performed by using the same mask (resist layer 310).
  • resist layer 310 the same mask
  • separate masks are not required to be produced for etching of the gate electrode 14 and for etching of the gate insulating film 13.
  • the source electrode 15 and the drain electrode 16 covering the base 11 and the semiconductor film 12 are formed with the gate insulating film 13 being interposed between the source electrode 15 and the drain electrode 16, such that a channel is formed in the semiconductor film 12.
  • the gate electrode covering layer 17 is formed on the gate electrode 14.
  • a method for forming the source electrode 15, the drain electrode 16, and the gate electrode covering layer 17 is not particularly limited and may be appropriately selected depending on the purpose. Examples of the method include a method for forming a film by using a sputtering method, a vacuum deposition method, a dip coating method, a spin coating method, and a die coating method, and subsequently patterning the film by photolithography.
  • the material and the thickness of the source electrode 15, the drain electrode 16, and the gate electrode covering layer 17 can be appropriately selected as described above.
  • a resist made of a photosensitive resin is formed on the entire surface of the source electrode 15, the drain electrode 16, and the gate electrode covering layer 17, and is subjected to the exposure and development process (photolithography process).
  • a resist layer 320 an etching mask covering predetermined regions on the source electrode 15, the drain electrode 16, and the gate electrode covering layer 17 is formed.
  • regions of the source electrode 15 and the drain electrode 16 that are not covered by the resist layer 320 are removed by etching.
  • the regions of the source electrode 15 and the drain electrode 16 can be removed by wet etching.
  • the gate electrode covering layer 17 is completely covered by the resist layer 320. Thus, the gate electrode covering layer 17 is not etched.
  • the resist layer 320 is removed. Accordingly, the self-aligned top-gate field-effect transistor 10 is produced.
  • the field-effect transistor 10 of the first embodiment is formed such that the source electrode 15 and the drain electrode 16 are in contact with the semiconductor film 12. Unlike conventional techniques, the field-effect transistor 10 of the first embodiment does not require a structure in which a source electrode and a drain electrode formed on an interlayer insulating layer are connected to a source region and a drain region of a semiconductor film 12 through contact holes. In addition, an impurity region or the like is not required to be formed. Accordingly, the field-effect transistor 10 can be miniaturized.
  • the field-effect transistor 10 is a self-aligned (self-alignment structure) field-effect transistor in which the source electrode 15 and the drain electrode 16 are produced in a self-alignment manner by using the gate insulating film 13 as a mask. This allows a channel length to be controlled based on the width of the gate insulating film 13, making it possible to miniaturize the field-effect transistor 10.
  • the planar shape of the gate insulating film 13 is substantially the same as the planar shape of the gate electrode 14. Therefore, parasitic capacitance can be reduced. As a result, switching characteristics of the field-effect transistor 10 can be enhanced.
  • the thickness of the source electrode 15 and of the drain electrode 16 are smaller than the thickness of the gate insulating film 13. This prevents the source electrode 15 and the drain electrode 16 from making contact with the gate electrode 14. Also, because the source electrode 15 and the drain electrode 16 are thin, a difference in level is formed between the source electrode 15 and the gate electrode covering layer 17 and also between the drain electrode 16 and the gate electrode covering layer 17. This ensures that the source electrode 15 and the drain electrode 16 are separated from the gate electrode covering layer 17. Accordingly, it is possible to suppress a leakage current between the source electrode 15 and the gate electrode 14 and also a leakage current between the drain electrode 16 and the gate electrode 14. Therefore, favorable transistor characteristics can be obtained.
  • the gate electrode 14 and the gate insulating film 13 are etched by using the same mask. This allows the number of etching masks used in the process for producing the field-effect transistor 10 to be reduced as compared to conventional production processes, making it possible to simplify the process for producing the field-effect transistor 10.
  • a second embodiment illustrates an example in which a gate electrode is formed in an overhang shape.
  • a description of the same elements as those of the above-described embodiment may be omitted.
  • FIG. 4 is a cross-sectional view illustrating a field-effect transistor of the second embodiment.
  • a difference between a field-effect transistor 10A illustrated in FIG. 4 and the field-effect transistor 10 (see FIG. 1A) is that the gate electrode 14 is replaced with a gate electrode 14A.
  • the gate electrode 14A is formed in an overhang shape. Namely, a gate insulating film 13 includes a region whose width is narrower than the gate electrode 14A.
  • the sides of the gate electrode 14A are perpendicular to the upper surface of a base 11.
  • the outer edge portion of the lower surface of the gate electrode 14A protrudes from the periphery of the upper surface of the gate insulating film 13.
  • the width of the gate electrode 14A is wider than the width of the gate insulating film 13.
  • An overhang amount (a difference in width between the gate electrode 14A and the gate insulating film 13 illustrated in the cross section of FIG. 4) can be set to approximately 100 nm to a few hundred nm, for example.
  • the gate electrode 14A may be formed in a downward tapered shape that becomes narrower toward the gate insulating film 13 or may be formed in an upward tapered shape that becomes wider toward the gate insulating film 13. Namely, as long as the gate insulating film 13 has a region whose width is narrower than the width of the gate electrode 14A, the gate insulating film 13 may be formed in any shape.
  • the gate electrode 14A in the overhang shape can be produced by controlling a wet etching process in the step illustrated in FIG. 2D. Namely, by controlling the wet etching process, the gate insulating film 13 having the region whose width is narrower than the width of the gate electrode 14A can be produced.
  • the field-effect transistor 10A of the second embodiment has a similar structure to that of the field-effect transistor 10 of the first embodiment. Therefore, the field-effect transistor 10A can be miniaturized.
  • the gate electrode 14A is formed in an overhang shape and the gate insulating film 13 has a region whose width is narrower than the width of the gate electrode 14A. This ensures that the source electrode 15 and the drain electrode 16 are separated from the gate electrode covering layer 17. Also, the thickness of the source electrode 15 and of the drain electrode 16 are smaller than the thickness of the gate insulating film 13. Because of this synergistic effect, it is possible to suppress a leakage current between the source electrode 15 and the gate electrode 14A and also a leakage current between the drain electrode 16 and the gate electrode 14A. Therefore, favorable transistor characteristics can be obtained. ⁇ Third Embodiment>
  • a third embodiment illustrates an example in which a gate electrode has an undercut.
  • a description of the same elements as those of the above-described embodiments may be omitted.
  • FIG. 5 is a cross-sectional view illustrating a field-effect transistor of the third embodiment.
  • a difference between a field-effect transistor 10B illustrated in FIG. 5 and the field-effect transistor 10 (see FIG. 1A) is that the gate electrode 14 is replaced with a gate electrode 14B.
  • the gate electrode 14B has an undercut. Namely, the gate electrode 14B includes a region whose width is narrower than the width of a gate insulating film 13.
  • the gate electrode 14B is a multi-layer film in which a conductive film 142 is laminated on a conductive film 141.
  • widths of the layers become narrower layer by layer toward the gate insulating film 13.
  • the width of the conductive film 141 is narrower than the width of the conductive film 142. Therefore, the outer edge portion of the lower surface of the conductive film 142 protrudes from the periphery of the upper surface of the conductive film 141.
  • the width of the conductive film 141 is narrower than the width of the gate insulating film 13. Therefore, the outer edge portion of the upper surface of the gate insulating film 13 protrudes from the periphery of the lower surface of the conductive film 141.
  • An undercut amount (a difference in width between the conductive film 141 and the conductive film 142 as illustrated in the cross section of FIG. 5) can be set to approximately 100 nm to a few hundred nm, for example.
  • a material of the conductive film 141 is not particularly limited and may be appropriately selected depending on the purpose. For example, it is possible to use metals, alloys, mixtures of a plurality of metals, and conductive films other than metal films, which can be etched by using an organic alkaline solution as an etching solution. Examples of the material include aluminum (Al), Al alloys (alloys mainly containing Al), and oxide films having conductivity.
  • organic alkaline solution examples include strong alkaline solutions such as tetramethyl ammonium hydroxide (TMAH-based), 2- hydroxyethyl trimethylammonium hydroxide (CHOLINE-based), and monoethanolamine solutions.
  • strong alkaline solutions such as tetramethyl ammonium hydroxide (TMAH-based), 2- hydroxyethyl trimethylammonium hydroxide (CHOLINE-based), and monoethanolamine solutions.
  • a material of the conductive film 142 is not particularly limited and may be appropriately selected depending on the purpose. For example, it is possible to use metals, alloys, mixtures of a plurality of metals, and conductive films other than metal films, which have an etching resistance to an organic alkaline solution and also have a higher etching rate for a predetermined etching solution than the conductive film 141.
  • the material include metals such as molybdenum (Mo), tungsten (W), titanium (Ti), tantalum (Ta), chromium (Cr), copper (Cu), and nickel(Ni), alloys thereof, mixtures of these metals, and oxide films having conductivity.
  • An average thickness of the conductive film 141 is not particularly limited and may be appropriately selected depending on the purpose, but is preferably 10 nm to 200 nm and more preferably 50 nm to 100 nm.
  • An average thickness of the conductive film 142 is not particularly limited and may be appropriately selected depending on the purpose, but is preferably 10 nm to 200 nm and more preferably 50 nm to 100 nm.
  • a gate insulating film 13 covering a semiconductor film 12 is formed over the entire surface of a base 11. Further, the conductive film 141 and the conductive film 142 are sequentially laminated on the gate insulating film 13.
  • a method for forming the gate insulating film 13 is as described above.
  • a method for forming the conductive films 141 and 142 is not particularly limited and may be appropriately selected depending on the purpose.
  • the method include a vacuum process such as a sputtering method, a pulse laser deposition (PLD) method, a chemical vapor deposition (CVD) method, and an atomic layer deposition (ALD) method, and also include a solution process such as a dip coating method, a spin coating method, and a die coating method.
  • PLD pulse laser deposition
  • CVD chemical vapor deposition
  • ALD atomic layer deposition
  • Other examples include a printing process such as an inkjet printing, a nanoimprinting, and a gravure printing.
  • a material (an Al alloy, for example) that can be etched by using an organic alkaline solution as an etching solution is selected as a material of the conductive film 141.
  • a resist made of a photosensitive resin is formed on the entire surface of the conductive film 142 and is subjected to the exposure and development process (photolithography process). As a result, a resist layer 310 (etching mask) covering a predetermined region on the conductive film 142 is formed.
  • a region of the conductive film 142 that is not covered by the resist layer 310 is removed by etching.
  • etching using an etching solution whose etching rate is higher for the conductive film 142 than for the conductive film 141, only the region of the conductive film 142 that is not covered by the resist layer 310 can be removed by etching.
  • the conductive film 141 is hardly etched.
  • the ratio of the etching rate of the conductive film 141 to the etching rate of the conductive film 142 is preferably at least 1:10.
  • the resist layer 310 has an etching resistance to the etching solution used in this step.
  • a region of the conductive film 141 that is not covered by the conductive film 142 is removed by etching.
  • an organic alkaline solution is used as an etching solution.
  • the resist layer 310 is soluble in the organic alkaline solution.
  • the conductive film 142 has an etching resistance to the organic alkaline solution. Therefore, while the resist layer 310 is dissolved, the conductive film 141 can be etched in a desired shape by using the conductive film 142 as a mask. Further, although the resist layer 310 is gradually dissolved, FIG. 6C illustrates a state in which the resist layer 310 is completely dissolved. After the conductive film 141 is etched, the gate insulating film 13 is etched by using the gate electrode 14B as a mask.
  • the conductive film 142 serves as an etching mask. Therefore, for example, after the step illustrated in FIG. 6B is performed, the resist layer 310 may be preliminarily removed by etching, and subsequently, the conductive film 141 may be etched by using the conductive film 142 as the etching mask.
  • the width of the conductive film 141 can be made narrower than the width of the conductive film 142 by controlling a wet etching process (such as an etching time). Namely, an undercut (a difference in width between the conductive film 141 and the conductive film 142 illustrated in the cross section of FIG. 6C) can be formed.
  • the gate electrode 14B and the gate insulating film 13 can be etched by performing a single mask production process (namely, a process for forming the resist layer 310) only. Namely, unlike conventional techniques, separate masks are not required to be produced for etching of the gate electrode 14B and for etching of the gate insulating film 13.
  • etching using the same mask includes a case in which a plurality of layers are etched by using the same resist layer as an etching mask, and also includes a case in which a lower layer is etched by using an upper layer as a mask when the resist layer is dissolved while the lower layer is being etched.
  • the self-aligned top-gate field-effect transistor 10B illustrated in FIG. 5 is produced.
  • the field-effect transistor 10B of the third embodiment has a similar structure to that of the field-effect transistor 10 of the first embodiment. Therefore, the field-effect transistor 10B can be miniaturized.
  • the gate electrode 14B has the undercut.
  • the source electrode 15, the drain electrode 16, and the gate electrode covering layer 17 are formed by sputtering, sputter particles hardly reach the undercut portion. This ensures that the source electrode 15 and the drain electrode 16 are separated from the gate electrode covering layer 17.
  • the thickness of the source electrode 15 and of the drain electrode 16 is smaller than the thickness of the gate insulating film 13. Because of this synergistic effect, it is possible to suppress a leakage current between the source electrode 15 and the gate electrode 14B and also a leakage current between the drain electrode 16 and the gate electrode 14B. Therefore, favorable transistor characteristics can be obtained.
  • the thickness of the source electrode 15 and of the drain electrode 16 is not required to be smaller than the thickness of the gate insulating film 13.
  • the thickness of the source electrode 15 and of the drain electrode 16 is smaller than the total thickness of the gate insulating film 13 and the gate electrode 14B excluding the upper layer (namely, the thickness of the gate insulating film 13 plus the thickness of the conductive film 141). This prevents the gate electrode 14B from making contact with the source electrode 15 and the drain electrode 16.
  • a fourth embodiment illustrates another example in which a gate electrode has an undercut.
  • a description of the same elements as those of the above-described embodiments may be omitted.
  • FIG. 7 is a cross-sectional view illustrating a field-effect transistor of the fourth embodiment.
  • a difference between a field-effect transistor 10C illustrated in FIG. 7 and the field-effect transistor 10 (see FIG. 1A) is that the gate electrode 14 is replaced with a gate electrode 14C.
  • the gate electrode 14C has an undercut. Namely, the gate electrode 14C has a region whose width is narrower than the width of the gate insulating film 13.
  • the gate electrode 14C is a multi-layer film in which a conductive film 142 and a conductive film 143 are sequentially laminated on a conductive film 141.
  • widths of the layers become narrower layer by layer toward a gate insulating film 13.
  • the width of the conductive film 141 is narrower than the width of the conductive film 142. Therefore, the outer edge portion of the lower surface of the conductive film 142 protrudes from the periphery of the upper surface of the conductive film 141.
  • the width of the conductive film 142 is narrower than the width of the conductive film 143.
  • the outer edge portion of the lower surface of the conductive film 143 protrudes from the periphery of the upper surface of the conductive film 142.
  • the width of the conductive film 141 is narrower than the width of the gate insulating film 13. Therefore, the outer edge portion of the upper surface of the gate insulating film 13 protrudes from the periphery of the lower surface of the conductive film 141.
  • An undercut amount (a difference in width between the conductive film 141 and the conductive film 142 illustrated in the cross section of FIG. 7) can be set to approximately 100 nm to a few hundred nm, for example. Also, an undercut amount (a difference in width between the conductive film 142 and the conductive film 143 illustrated in the cross section of FIG. 7) can be set to approximately 100 nm to a few hundred nm, for example.
  • a material of the conductive film 143 is not particularly limited and may be appropriately selected depending on the purpose. For example, it is possible to use metals, alloys, mixtures of a plurality of metals, and conductive films other than metal films, which have an etching resistance to an organic alkaline solution and also have a higher etching rate for a predetermined etching solution than the conductive film 142.
  • the material include metals such as molybdenum (Mo), tungsten (W), titanium (Ti), tantalum (Ta), chromium (Cr), copper (Cu), and nickel (Ni), alloys thereof, mixtures of these metals, and oxide films having conductivity.
  • An average thickness of the conductive film 143 is not particularly limited and may be appropriately selected depending on the purpose, but is preferably 10 nm to 200 nm and more preferably 50 nm to 100 nm.
  • a gate insulating film 13 covering a semiconductor film 12 is formed over the entire surface of a base 11. Further, the conductive film 141, the conductive film 142, and the conductive film 143 are sequentially laminated on the gate insulating film 13.
  • a method for forming the gate insulating film 13 is as described above.
  • a method for forming the conductive film 143 can be the same as the method for forming the conductive films 141 and 142.
  • a material (an Al alloy, for example) that can be etched by using an organic alkaline solution as an etching solution is selected as a material of the conductive film 141.
  • a material (a Mo alloy, for example) that has an etching resistance to the organic alkaline solution and also has a higher etching rate for a predetermined etching solution than the conductive film 141 is selected as a material of the conductive film 142.
  • a material (Ti, for example) that has an etching resistance to the organic alkaline solution and also has a higher etching rate for a predetermined etching solution than the conductive film 142 is selected as a material of the conductive film 143.
  • a resist made of a photosensitive resin is formed on the entire surface of the conductive film 143, and is subjected to the exposure and development process (photolithography process). As a result, a resist layer 310 (etching mask) covering a predetermined region on the conductive film 143 is formed.
  • a region of the conductive film 143 that is not covered by the resist layer 310 is removed by etching.
  • an etching solution whose etching rate is higher for the conductive film 143 than for the conductive film 142 By performing etching using an etching solution whose etching rate is higher for the conductive film 143 than for the conductive film 142, only the region of the conductive film 143 that is not covered by the resist layer 310 can be removed by etching. At this time, the conductive film 142 is hardly etched.
  • the ratio of the etching rate of the conductive film 142 to the etching rate of the conductive film 143 is preferably at least 1:10.
  • the resist layer 310 has an etching resistance to the etching solution used in this step.
  • a region of the conductive film 142 that is not covered by the resist layer 310 is removed by etching.
  • etching using an etching solution whose etching rate is higher for the conductive film 142 than for the conductive film 141, only the region of the conductive film 142 that is not covered by the resist layer 310 can be removed by etching.
  • the conductive film 141 is hardly etched.
  • the ratio of the etching rate of the conductive film 141 to the etching rate of the conductive film 142 is preferably at least 1:10.
  • the resist layer 310 has an etching resistance to the etching solution used in this step.
  • FIG. 8D a region of the conductive film 141 that is not covered by the conductive films 142 and 143 is removed by etching.
  • an organic alkaline solution is used as an etching solution.
  • the resist layer 310 is soluble in the organic alkaline solution.
  • the conductive films 142 and 143 have an etching resistance to the organic alkaline solution. Therefore, while the resist layer 310 is dissolved, the conductive film 141 can be etched in a desired shape by using the conductive films 142 and 143 as a mask. Further, although the resist layer 310 is gradually dissolved, FIG. 8D illustrates a state in which the resist layer 310 is completely dissolved. After the conductive film 141 is etched, the gate insulating film 13 is etched by using the gate electrode 14C as a mask.
  • the conductive films 142 and 143 serve as an etching mask. Therefore, for example, after the step illustrated in FIG. 8B or FIG. 8C is performed, the resist layer 310 may be preliminarily removed by etching, and subsequently, the conductive film 141 may be etched by using the conductive films 142 and 143 as an etching mask.
  • the width of the conductive film 142 can be made narrower than the width of the conductive film 143, and further the width of the conductive film 141 can be made narrower than the width of the conductive film 142. Namely, an undercut (a difference in width between the conductive film 141 and the conductive film 143 illustrated in the cross section of FIG. 8D) can be formed wider.
  • the gate electrode 14C and the gate insulating film 13 can be etched by performing a single mask production process (namely, a process for forming the resist layer 310) only. Namely, unlike conventional techniques, separate masks are not required to be produced for etching of the gate electrode 14C and for etching of the gate insulating film 13.
  • the self-aligned top-gate field-effect transistor 10C illustrated in FIG. 7 is produced.
  • the field-effect transistor 10C of the fourth embodiment has a similar structure to that of the field-effect transistor 10 of the first embodiment. Therefore, the field-effect transistor 10C can be miniaturized.
  • the gate electrode 14C of the field-effect transistor 10C has a three-layer structure, etching conditions of the layers can be more easily adjusted than the gate electrode 14B having a two-layer structure. Therefore, an undercut amount of the field-effect transistor 10C can be increased further than that of the field-effect transistor 10B. Accordingly, in a case where the source electrode 15, the drain electrode 16, and the gate electrode covering layer 17 are formed by sputtering, sputter particles hardly reach the undercut portion.
  • the thickness of the source electrode 15 and of the drain electrode 16 is smaller than the thickness of the gate insulating film 13. Because of this synergistic effect, it is possible to suppress a leakage current between the source electrode 15 and the gate electrode 14B and also a leakage current between the drain electrode 16 and the gate electrode 14C. Therefore, favorable transistor characteristics can be obtained.
  • the thickness of the source electrode 15 and of the drain electrode 16 is not required to be smaller than the thickness of the gate insulating film 13.
  • the thickness of the source electrode 15 and the drain electrode 16 is smaller than the total thickness of the gate insulating film 13 and the gate electrode 14C excluding the uppermost layer (namely, the thickness of the gate insulating film 13 plus the thickness of the conductive film 141 plus the thickness of the conductive film 142). This prevents the gate electrode 14C from making contact with the source electrode 15 and the drain electrode 16.
  • a fifth embodiment illustrates an example of a gate electrode having a two-layer structure in which an upper electrode layer has a narrower pattern width than a pattern width of a lower electrode layer.
  • a description of the same elements as those of the above-described embodiments may be omitted.
  • FIG. 9 is a cross-sectional view illustrating a field-effect transistor of the fifth embodiment.
  • a difference between a field-effect transistor 10D illustrated in FIG. 9 and the field-effect transistor 10 (see FIG. 1A) is that the gate electrode 14 is replaced with a gate electrode 14D.
  • the gate electrode 14D has two electrode layers.
  • the gate electrode 14D is a multi-layer film in which a conductive film 142 is laminated on a conductive film 141.
  • widths of the layers become narrower layer by layer toward a gate insulating film 13.
  • the width of the conductive film 141 is narrower than the width of the conductive film 142. Therefore, the outer edge portion of the upper surface of the conductive film 141 protrudes from the periphery of the lower surface of the conductive film 142.
  • a material of the conductive film 141 is not particularly limited and may be appropriately selected depending on the purpose. For example, it is possible to use metals, alloys, mixtures of a plurality of metals, and conductive films other than metal films, which can be etched by using an organic alkaline solution as an etching solution. Examples of the material include aluminum (Al), Al alloys (alloys mainly containing Al), and oxide films having conductivity.
  • organic alkaline solution examples include strong alkaline solutions such as tetramethyl ammonium hydroxide (TMAH-based), 2- hydroxyethyl trimethylammonium hydroxide (CHOLINE-based), and monoethanolamine solutions.
  • strong alkaline solutions such as tetramethyl ammonium hydroxide (TMAH-based), 2- hydroxyethyl trimethylammonium hydroxide (CHOLINE-based), and monoethanolamine solutions.
  • a material of the conductive film 142 is not particularly limited and may be appropriately selected depending on the purpose. For example, it is possible to use metals, alloys, mixtures of a plurality of metals, and conductive films other than metal films, which have an etching resistance to an organic alkaline solution and also have a higher etching rate for a predetermined etching solution than the conductive film 141.
  • the material include metals such as molybdenum (Mo), tungsten (W), titanium (Ti), tantalum (Ta), chromium (Cr), copper (Cu), and nickel (Ni), alloys thereof, mixtures of these metals, and oxide films having conductivity.
  • An average thickness of the conductive film 141 is not particularly limited and may be appropriately selected depending on the purpose, but is preferably 10 nm to 200 nm and more preferably 50 nm to 100 nm.
  • An average thickness of the conductive film 142 is not particularly limited and may be appropriately selected depending on the purpose, but is preferably 10 nm to 200 nm and more preferably 50 nm to 100 nm.
  • a gate insulating film 13 covering a semiconductor film 12 is formed over the entire surface of a base 11. Further, the conductive film 141 and the conductive film 142 are sequentially laminated on the gate insulating film 13. A method for forming the gate insulating film 13 is as described above.
  • a method for forming the conductive films 141 and 142 is not particularly limited and may be appropriately selected depending on the purpose.
  • the method include a vacuum process such as a sputtering method, a pulse laser deposition (PLD) method, a chemical vapor deposition (CVD) method, and an atomic layer deposition (ALD) method, and also include a solution process such as a dip coating method, a spin coating method, and a die coating method.
  • PLD pulse laser deposition
  • CVD chemical vapor deposition
  • ALD atomic layer deposition
  • Other examples include a printing process such as an inkjet printing, a nanoimprinting, and a gravure printing.
  • a material (an Al alloy, for example) that can be etched by using an organic alkaline solution as an etching solution is selected as a material of the conductive film 141.
  • a resist made of a photosensitive resin is formed on the entire surface of the conductive film 142 and is subjected to the exposure and development process (photolithography process). As a result, a resist layer 310 (etching mask) covering a predetermined region on the conductive film 142 is formed.
  • a region of the conductive film 142 that is not covered by the resist layer 310 is removed by etching.
  • etching using an etching solution whose etching rate is higher for the conductive film 142 than for the conductive film 141, only the region of the conductive film 142 that is not covered by the resist layer 310 can be removed by etching.
  • the conductive film 141 is hardly etched.
  • the ratio of the etching rate of the conductive film 141 to the etching rate of the conductive film 142 is preferably at least 1:10.
  • the resist layer 310 has an etching resistance to the etching solution used in this step.
  • a region of the conductive film 141 that is not covered by the conductive film 142 is removed by etching.
  • an organic alkaline solution is used as an etching solution.
  • the resist layer 310 is soluble in the organic alkaline solution.
  • the conductive film 142 has an etching resistance to the organic alkaline solution. Therefore, while the resist layer 310 is dissolved, the conductive film 141 can be etched in a desired shape by using the conductive film 142 as a mask. Further, although the resist layer 310 is gradually dissolved, FIG. 6C illustrates the state in which the resist layer 310 is completely dissolved. After the conductive film 141 is etched, the gate insulating film 13 is etched by using the gate electrode 14D as a mask.
  • the conductive film 142 serves as an etching mask. Therefore, for example, after the step illustrated in FIG. 6B is performed, the resist layer 310 may be preliminarily removed by etching, and subsequently, the conductive film 141 may be removed by etching using the conductive film 142 as the etching mask.
  • the gate electrode 14D and the gate insulating film 13 can be etched by performing a single mask production process (namely, a process for forming the resist layer 310) only. Namely, unlike conventional techniques, separate masks are not required to be produced for etching of the gate electrode 14D and for etching of the gate insulating film 13.
  • the self-aligned top-gate field-effect transistor 10D illustrated in FIG. 9 is produced.
  • the field-effect transistor 10D of the fifth embodiment has a similar structure to that of the field-effect transistor 10 of the first embodiment. Therefore, the field-effect transistor 10D can be miniaturized.
  • the thickness of the source electrode 15 and of the drain electrode 16 are smaller than the thickness of the gate insulating film 13. This prevents the source electrode 15 and the drain electrode 16 from making contact with the gate electrode 14D. Also, because the source electrode 15 and the drain electrode 16 are thin, a difference in level is formed between the source electrode 15 and the gate electrode covering layer 17 and also between the drain electrode 16 and the gate electrode covering layer 17. Accordingly, it is possible to suppress a leakage current between the source electrode 15 and the gate electrode 14D and also a leakage current between the drain electrode 16 and the gate electrode 14D. Therefore, favorable transistor characteristics can be obtained. ⁇ Sixth Embodiment>
  • a sixth embodiment illustrates another example of a gate electrode having a three-layer structure in which a middle electrode layer has an undercut.
  • a description of the same elements as those of the above-described embodiments may be omitted.
  • FIG. 10 is a cross-sectional view illustrating a field-effect transistor of the sixth embodiment.
  • a difference between a field-effect transistor 10E illustrated in FIG. 10 and the field-effect transistor 10 (see FIG. 1A) is that the gate electrode 14 is replaced with a gate electrode 14E.
  • the gate electrode 14E has a three-layer structure in which a middle electrode layer has an undercut.
  • the gate electrode 14E is a multi-layer film in which a conductive film 142 and a conductive film 143 are sequentially laminated on a conductive film 141.
  • the width of the conductive film 142 is narrower than the widths of the conductive film 141 and the conductive film 143.
  • An undercut amount (a difference in width between the conductive film 142 and the conductive film 143 illustrated in the cross section of FIG. 10) can be set to approximately 100 nm to a few hundred nm, for example.
  • a material of the conductive film 143 is not particularly limited and may be appropriately selected depending on the purpose. For example, it is possible to use metals, alloys, mixtures of a plurality of metals, and conductive films other than metal films, which have an etching resistance to an organic alkaline solution and also have a higher etching rate for a predetermined etching solution than the conductive film 142.
  • the material include metals such as molybdenum (Mo), tungsten (W), titanium (Ti), tantalum (Ta), chromium (Cr), copper (Cu), and nickel (Ni), alloys thereof, mixtures of these metals, and oxide films having conductivity.
  • An average thickness of the conductive film 143 is not particularly limited and may be appropriately selected depending on the purpose, but is preferably 10 nm to 200 nm and more preferably 50 nm to 100 nm.
  • a gate insulating film 13 covering a semiconductor film 12 is formed over the entire surface of a base 11. Further, the conductive film 141, the conductive film 142, and the conductive film 143 are sequentially laminated on the gate insulating film 13.
  • a method for forming the gate insulating film 13 is as described above.
  • a method for forming the conductive film 143 can be the same as the method for forming the conductive films 141 and 142.
  • a material (an Al alloy, for example) that can be etched by using an organic alkaline solution as an etching solution is selected as a material of the conductive film 141.
  • a material (a Mo alloy, for example) that has an etching resistance to the organic alkaline solution and also has a higher etching rate for a predetermined etching solution than the conductive film 141 is selected as a material of the conductive film 142.
  • a material (Ti, for example) that has an etching resistance to the organic alkaline solution and also has a higher etching rate for a predetermined etching solution than the conductive film 142 is selected as a material of the conductive film 143.
  • a resist made of a photosensitive resin is formed on the entire surface of the conductive film 143, and is subjected to the exposure and development process (photolithography process). As a result, the resist layer 310 (etching mask) covering a predetermined region on the conductive film 143 is formed.
  • a region of the conductive film 143 that is not covered by the resist layer 310 is removed by etching.
  • an etching solution whose etching rate is higher for the conductive film 143 than for the conductive film 142 By performing etching using an etching solution whose etching rate is higher for the conductive film 143 than for the conductive film 142, only the region of the conductive film 143 that is not covered by the resist layer 310 can be removed by etching. At this time, the conductive film 142 is hardly etched.
  • the ratio of the etching rate of the conductive film 142 to the etching rate of the conductive film 143 is preferably at least 1:10.
  • the resist layer 310 has an etching resistance to the etching solution used in this step.
  • a region of the conductive film 142 that is not covered by the resist layer 310 is removed by etching.
  • etching using an etching solution whose etching rate is higher for the conductive film 142 than for the conductive film 141, only the region of the conductive film 142 that is not covered by the resist layer 310 can be removed by etching.
  • the conductive film 141 is hardly etched.
  • the ratio of the etching rate of the conductive film 141 to the etching rate of the conductive film 142 is preferably at least 1:10.
  • the resist layer 310 has an etching resistance to the etching solution used in this step.
  • FIG. 8D a region of the conductive film 141 that is not covered by the conductive films 142 and 143 is removed by etching.
  • an organic alkaline solution is used as an etching solution.
  • the resist layer 310 is soluble in the organic alkaline solution.
  • the conductive films 142 and 143 have an etching resistance to the organic alkaline solution. Therefore, while the resist layer 310 is dissolved, the conductive film 141 can be etched in a desired shape by using the conductive films 142 and 143 as a mask. Further, although the resist layer 310 is gradually dissolved, FIG. 8D illustrates a state in which the resist layer 310 is completely dissolved. After the conductive film 141 is etched, the gate insulating film 13 is etched by using the gate electrode 14E as a mask.
  • the conductive films 142 and 143 serve as an etching mask. Therefore, for example, after the step illustrated in FIG. 8B or FIG. 8C is performed, the resist layer 310 may be preliminarily removed by etching, and subsequently, the conductive film 141 may be etched by using the conductive films 142 and 143 as an etching mask.
  • the gate electrode 14E and the gate insulating film 13 can be etched by performing a single mask production process (namely, a process for forming the resist layer 310) only. Namely, unlike conventional techniques, separate masks are not required to be produced for etching of the gate electrode 14E and for etching of the gate insulating film 13.
  • the self-aligned top-gate field-effect transistor 10E illustrated in FIG. 10 is produced.
  • the field-effect transistor 10E of the sixth embodiment has a similar structure to that of the field-effect transistor 10 of the first embodiment. Therefore, the field-effect transistor 10E can be miniaturized.
  • the thickness of the source electrode 15 and of the drain electrode 16 is smaller than the thickness of the gate insulating film 13. This prevents the gate electrode 14E from making contact with the source electrode 15 and the drain electrode 16. Also, because the source electrode 15 and the drain electrode 16 are thin, a difference in level is formed between the source electrode 15 and the gate electrode covering layer 17 and also between the drain electrode 16 and the gate electrode covering layer 17. This ensures that the source electrode 15 and the drain electrode 16 are separated from the gate electrode covering layer 17. Accordingly, it is possible to suppress a leakage current between the source electrode 15 and the gate electrode 14E and also a leakage current between the drain electrode 16 and the gate electrode 14E. Therefore, favorable transistor characteristics can be obtained. ⁇ Example 1>
  • Example 1 a top-gate field-effect transistor as illustrated in FIG. 4 was produced by using the production process illustrated in FIGS. 2A through 2D and FIGS. 3A through 3C.
  • Solution A (199.9 ml), solution B (50 ml), and solution C (10 ml), and 1,2-propanediol (420 ml) were mixed and stirred at room temperature to make a coating solution for producing a n-type oxide semiconductor.
  • the above-described coating solution for producing the n-type oxide semiconductor was applied to the base 11 by an inkjet printing method, and was baked at 300°C for one hour at atmospheric pressure. The thickness of the resultant semiconductor film 12 was 50 nm.
  • a resist layer 300 serving as a mask was formed on the semiconductor film 12 and the semiconductor film 12 was patterned by photolithography and etching.
  • the coating solution for forming the gate insulating film was dropped and spin-coated on the base 11 and the semiconductor film 12 under predetermined conditions (spinning was performed at 500 rpm for 5 seconds followed by 3,000 rpm for 20 seconds, and brought to a stop at 0 rpm in 5 seconds).
  • the resultant film was dried at 120°C for 1 hour at atmospheric pressure, baked at 400°C for 3 hours in an O 2 atmosphere, and annealed at 50°C for 1 hour at atmospheric pressure to form an oxide film as a gate insulating film 13.
  • the average thickness of the gate insulating film 13 was approximately 110 nm.
  • a gate electrode 14 As a gate electrode 14, an Al alloy film was formed on the gate insulating film 13 by a sputtering method. Next, a resist layer 310 serving as a mask was formed on the gate electrode 14. The gate insulating film 13 and the gate electrode 14 were patterned by photolithography and etching. At this time, an overhang shape illustrated in FIG. 4 was formed by adjusting the etching process.
  • a source electrode 15 and a drain electrode 16 Al alloy films were formed by the sputtering method.
  • a resist layer 320 serving as a mask was formed on the source electrode 15, the drain electrode 16, and the gate electrode covering layer 17.
  • the source electrode 15 and the drain electrode 16 were patterned by photolithography and etching.
  • Example 2 a top-gate field-effect transistor as illustrated in FIG. 4 was produced by the process illustrated in FIGS. 2A through 2D and FIGS. 3A through 3C in the same manner as Example 1, except that a Mo alloy film was formed as a source electrode 15, a drain electrode 16, and a gate electrode covering layer 17 by the sputtering method.
  • a Mo alloy film was formed as a source electrode 15, a drain electrode 16, and a gate electrode covering layer 17 by the sputtering method.
  • Example 3 a top-gate field-effect transistor as illustrated in FIG. 4 was produced by the process illustrated in FIGS. 2A through 2D and FIGS. 3A through 3C in the same manner as Example 1, except that Mg-In based oxide was formed as a semiconductor film 12 by the sputtering method.
  • an In-based oxide semiconductor film (semiconductor layer) was formed on a base 11 made of glass by the sputtering method.
  • a polycrystalline sintered material having a composition of In 2 MgO 4 was used as a sputtering target.
  • the ultimate vacuum in a sputter chamber was set to 2 ⁇ 10 -5 Pa.
  • the flow rates of argon gas and oxygen gas used during sputtering were adjusted and the total pressure was set to 0.3 Pa.
  • the flow rate of oxygen the amount of oxygen in the oxide semiconductor film was controlled and the electron carrier density was also controlled.
  • the thickness of the resultant oxide semiconductor film (semiconductor layer) was 50 nm.
  • Example 4 a top-gate field-effect transistor as illustrated in FIG. 4 was produced by the process illustrated in FIGS. 2A through 2D and FIGS. 3A through 3C in the same manner as Example 1, except that a gate insulating film 13 consisting of a SiO 2 film was formed by a CVD method.
  • a gate insulating film 13 consisting of a SiO 2 film was formed by a CVD method.
  • a top-gate field-effect transistor as illustrated in FIG. 4 was produced by the process illustrated in FIGS. 2A through 2D and FIGS. 3A through 3C in the same manner as Example 1, except that the thickness of the source electrode 15, the drain electrode 16, and the gate electrode covering layer 17 was formed larger than the thickness of the gate insulating film 13.
  • the performance of the field-effect transistors obtained in Examples 1 through 4 and Comparative Examples 1 and 2 was evaluated using a semiconductor parameter analyzer (B1500 semiconductor parameter analyzer, available from Agilent Technologies). To be more specific, with a source-drain voltage (Vds) being set to 10 V and the gate voltage (Vg) being changed from -15V to +15V, a source-drain current (Ids) and gate current (Ig) leakage (Ig leakage) were measured to evaluate current-voltage characteristics. Table 1 illustrates the evaluation results, along with the number of masks used to produce the field-effect transistors in the respective examples.
  • Vds source-drain voltage
  • Vg gate voltage
  • Ig leakage gate current
  • FIG. 11 illustrates characteristics of the field-effect transistor produced in Example 1, the field-effect transistors produced in Examples 2 through 4 presented substantially the same characteristics.
  • a seventh embodiment illustrates an example of a display element using the field-effect transistor of the first embodiment, a display device, and a system.
  • a description of the same elements as those of the above-described embodiment may be omitted.
  • the display element of the seventh embodiment at least includes a light control element and a driving circuit configured to drive the light control element.
  • the display element further includes other members as necessary.
  • the light control element is not particularly limited and may be appropriately selected depending on the purpose as long as the light control element is an element configured to control light output in accordance with a driving signal. Examples of the light control element include an electroluminescent (EL) element, an electrochromic (EC) element, a liquid crystal element, an electrophoretic element, and an electrowetting element.
  • the driving circuit is not particularly limited and may be appropriately selected depending on the purpose.
  • Other members are not particularly limited and may be appropriately selected depending on the purpose.
  • the display element of the seventh embodiment has the field-effect transistor of the first embodiment, the field-effect transistor can be miniaturized. Accordingly, the display element can be downsized.
  • the display element of the seventh embodiment has high display qualities.
  • the display device of the seventh embodiment at least includes a plurality of display elements of the seventh embodiment, a plurality of wires, and a display control unit.
  • the display device further includes other members as necessary.
  • the plurality of display elements are not particularly limited and may be appropriately selected depending on the purpose, as long as the plurality of display elements are the display elements of the seventh embodiment arranged in a matrix form.
  • the plurality of wires are not particularly limited and may be appropriately selected depending on the purpose, as long as the plurality of wires are capable of individually applying a gate voltage and supplying an image data signal to the field-effect transistors in the plurality of display elements.
  • the display control unit is not particularly limited and may be appropriately selected depending on the purpose, as long as the display control is capable of individually controlling the gate voltage and the signal voltage of the field-effect transistor via the plurality of wires based on the image data.
  • Other members are not particularly limited and may be appropriately selected depending on the purpose.
  • the display device of the seventh embodiment includes the field-effect transistor of the first embodiment, the display device can display high-quality images. (System)
  • the system of the seventh embodiment at least includes the display apparatus of the seventh embodiment and an image data generating device.
  • the image data generating device generates image data based on image information to be displayed and outputs the image data to the display device.
  • the system includes the display device according to the seventh embodiment, high-definition image information can be displayed.
  • the display element, the display device, and the system of the seventh embodiment will be specifically described below.
  • FIG. 12 illustrates a schematic block configuration of the television apparatus of the seventh embodiment. Connecting lines illustrated in FIG. 12 are for illustrating a flow of typical signals and information, and are not for illustrating the entire connection relationship between the blocks.
  • a television apparatus 500 of the seventh embodiment includes a main controller 501, a tuner 503, an analog-digital converter (ADC) 504, a demodulating circuit 505, a transport stream (TS) decoder 506, an audio decoder 511, a digital-to-analog (DA) converter (DAC) 512, an audio output circuit 513, a speaker 514, a video decoder 521, a video/OSD synthesizing circuit 522, a video output circuit 523, a display device 524, an OSD rendering circuit 525, a memory 531, an operating device 532, a drive interface (drive IF) 541, a hard disk drive 542, an optical disc drive 543, an IR photodetector 551, a communication controller 552, and the like.
  • ADC analog-digital converter
  • DAC digital-to-analog converter
  • the main controller 501 controls the entire television apparatus 500, and includes a CPU, flash ROM, RAM, and the like.
  • the flash ROM stores a program written in code that can be decoded by the CPU, and also stores various types of data used for processing by the CPU.
  • the RAM is working memory.
  • the tuner 503 selects a preset channel from broadcast waves received by an antenna 610.
  • the ADC 504 converts an output signal (analog information) of the tuner 503 to digital information.
  • the demodulating circuit 505 demodulates the digital information from the ADC 504.
  • the TS decoder 506 decodes an output signal from the demodulating circuit 505 and separates the output signal into sound information and video information.
  • the audio decoder 511 decodes the sound information from the TS decoder 506.
  • the DA converter (DAC) 512 converts an output signal from the audio decoder 511 to an analog signal.
  • the audio output circuit 513 outputs the output signal from the DA converter (DAC) 512 to the speaker 514.
  • the video decoder 521 decodes the video information from the TS decoder 506.
  • the video-OSD synthesizing circuit 522 synthesizes an output signal from the video decoder 521 and an output signal from the OSD rendering circuit 525.
  • the video output circuit 523 outputs an output signal from the video-OSD synthesizing circuit 522 to the display device 524.
  • the OSD rendering circuit 525 includes a character generator for displaying characters and graphics on a screen of the display device 524. Also, the OSD rendering circuit 525 generates a signal including display information according to instructions from the operating device 532 and the IR photodetector 551.
  • the memory 531 temporarily stores audio-visual (AV) data and other data.
  • the operating device 532 includes an input medium (not illustrated) such as a control panel, and indicates various types of information input by a user to the main controller 501.
  • the drive IF 541 is an interactive communication interface.
  • the drive IF 541 is compatible with the ATAPI (AT attachment packet interface).
  • the hard disk drive 542 includes a hard disk and a driving device configured to drive the hard disk.
  • the driving device records data on the hard disk and reproduces the data recorded on the hard disk.
  • the optical disc drive 543 records data on an optical disc (a DVD, for example) and reproduces the data recorded on the optical disc.
  • the IR photodetector 551 receives a photosignal from a remote control transmitter 620, and notifies the photosignal to the main controller 501.
  • the communication controller 552 controls communication with the Internet. Various types of information can be obtained via the Internet.
  • the display device 524 includes a display unit 700 and a display control unit 780.
  • the display unit 700 includes a display 710 in which a plurality of display elements 702 are arranged in a matrix form (herein, n ⁇ m number of display elements).
  • the display 710 includes n number of scanning lines (X0, X1, X2, X3, across, Xn-2, Xn-1) arranged along the x-axis direction at regular intervals, m number of data lines (Y0, Y1, Y2, Y3, across, Ym-1) arranged along the y-axis direction at regular intervals, and m number of current supply lines arranged along the y-axis direction at regular intervals(Y0i, Y1i, Y2i, Y3i, across, Ym-1i).
  • the display elements 702 can be identified by the scanning lines and the data lines.
  • the respective display elements 702 include an organic EL (electroluminescent) element 750 and a driving circuit 720 configured to cause the organic EL (electroluminescent) element 750 to emit light.
  • the display 710 is an organic EL display of what is known as an active matrix system. Also, the display 710 is a 32-inch color display, but the size of the display 710 is not limited thereto.
  • the organic EL element 750 includes an organic EL thin film layer 740, a cathode 712, and an anode 714.
  • the organic EL element 750 can be disposed next to the field-effect transistor.
  • the organic EL element 750 and the field-effect transistor can be formed on the same base.
  • the present invention is not limited thereto.
  • the organic EL element 750 may be disposed above the field-effect transistor.
  • the gate electrode is required to have transparency. Therefore, a transparent oxide having conductivity, such as ITO, In 2 O 3 , SnO 2 , ZnO, Ga-added ZnO, Al-added ZnO, and Sb-added SnO 2 , is used for the gate electrode.
  • aluminum (Al) is used for the cathode 712.
  • a magnesium (Mg)-silver (Ag) alloy, an aluminum (Al)-lithium (Li) alloy, indium tin oxide (ITO), and the like may be used.
  • ITO is used for the anode 714.
  • an oxide having conductivity such as In 2 O 3 , SnO 2 , and ZnO and a silver (Ag)-neodymium (Nd) alloy may be used.
  • the organic EL thin film layer 740 includes an electron transporting layer 742, a light emitting layer 744, and a hole transporting layer 746.
  • the cathode 712 is connected to the electron transporting layer 742.
  • the anode 714 is connected to the hole transporting layer 746. When a predetermined voltage is applied between the anode 714 and the cathode 712, the light emitting layer 744 emits light.
  • the driving circuit 720 includes two field-effect transistors 810 and 820 and a capacitor 830.
  • the field-effect transistor 810 operates as a switching element.
  • a gate electrode G is connected to a predetermined scanning line and a source electrode S is connected to a predetermined data line.
  • a drain electrode D is connected to one terminal of the capacitor 830.
  • the capacitor 830 is configured to store the state, namely data, of the field-effect transistor 810.
  • the other terminal of the capacitor 830 is connected to a predetermined current supply line.
  • the field-effect transistor 820 is configured to supply a large current to the organic EL element 750.
  • a gate electrode G is connected to the drain electrode D of the field-effect transistor 810.
  • a drain electrode D is connected to the anode 714 of the organic EL element 750.
  • a source electrode S is connected to a predetermined current supply line.
  • the organic EL element 750 is driven by the field-effect transistor 820.
  • the display control unit 780 includes an image data processing circuit 782, a scanning line driving circuit 784, and a data line driving circuit 786.
  • the image data processing circuit 782 determines brightness of a plurality of display elements 702 in the display 710 based on an output signal from the video output circuit 523.
  • the scanning line driving circuit 784 individually applies a voltage to n number of scanning lines in accordance with an instruction from the image data processing circuit 782.
  • the data line driving circuit 786 individually applies a voltage to m number of data lines in accordance with an instruction from the image data processing circuit 782.
  • the video decoder 521, the video-OSD synthesizing circuit 522, the video output circuit 523, and the OSD rendering circuit 525 constitute the image data generating device.
  • the light control element is not limited thereto and may be a liquid crystal element, an electrochromic element, an electrophoretic element, or an electrowetting element.
  • the light control element is a liquid crystal element
  • a liquid crystal display is used as the above-described display 710.
  • a current supply line is not required for the display element 703.
  • a driving circuit 730 can be formed by a single field-effect transistor 840, which is similar to the field-effect transistors (810 and 820) illustrated in FIG. 14.
  • a gate electrode G is connected to a predetermined scanning line and a source electrode S is connected to a predetermined data line.
  • a drain electrode D is connected to a pixel electrode and a capacitor 760 of a liquid crystal element 770.
  • Reference numerals 762 and 772 in FIG. 20 are counter electrodes (common electrodes) of the capacitor 760 and the liquid crystal element 770, respectively.
  • the driving circuit may include any of the field-effect transistors of the second through fourth embodiments.
  • the system of the present invention is not limited thereto. Namely, the system is not limited as long as the system includes the display device 524 as a device configured to display images and information.
  • the system may be a computer system (including a personal computer) in which a computer is connected to the display device 524.
  • the display device 524 can be used as a display part in mobile information devices such as mobile phones, portable music players, portable video players, electronic books, personal digital assistants (PDAs) and in image devices such as still cameras and video cameras. Further, the display device 524 can be used as a display part for displaying various information in transportation systems such as cars, aircraft, trains, and ships. Further, the display device 524 can be used as a display part for displaying various information in measuring devices, analysis devices, medical equipment, and advertising media.
  • mobile information devices such as mobile phones, portable music players, portable video players, electronic books, personal digital assistants (PDAs) and in image devices such as still cameras and video cameras.
  • PDAs personal digital assistants
  • image devices such as still cameras and video cameras.
  • the display device 524 can be used as a display part for displaying various information in transportation systems such as cars, aircraft, trains, and ships.
  • the display device 524 can be used as a display part for displaying various information in measuring devices, analysis devices, medical equipment, and advertising media.

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  • Manufacturing & Machinery (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)

Abstract

L'invention vise à miniaturiser un transistor à effet de champ. Un transistor à effet de champ comprend un film semiconducteur formé sur une base, un film d'isolation de grille formé sur une partie du film semiconducteur, une électrode de grille formée sur le film d'isolation de grille, et une électrode de source et une électrode de drain formées en contact avec le film de semiconducteur, une épaisseur de l'électrode de source et de l'électrode de drain étant inférieure à une épaisseur du film d'isolation de grille, et le film d'isolation de grille comprenant une région qui n'est pas en contact avec l'électrode de source ou l'électrode de drain.
EP18714869.7A 2017-03-17 2018-03-15 Transistor à effet de champ, son procédé de production, élément d'affichage, dispositif d'affichage, et système Pending EP3596757A1 (fr)

Applications Claiming Priority (3)

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JP2017053733 2017-03-17
JP2018045946A JP2018157206A (ja) 2017-03-17 2018-03-13 電界効果型トランジスタ及びその製造方法、表示素子、表示装置、システム
PCT/JP2018/010350 WO2018169024A1 (fr) 2017-03-17 2018-03-15 Transistor à effet de champ, son procédé de production, élément d'affichage, dispositif d'affichage, et système

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EP3596757A1 true EP3596757A1 (fr) 2020-01-22

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EP (1) EP3596757A1 (fr)
JP (1) JP2018157206A (fr)
CN (1) CN110392928A (fr)
SG (1) SG11201907741PA (fr)
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JP2000196099A (ja) * 1998-12-28 2000-07-14 Matsushita Electronics Industry Corp 薄膜トランジスタおよびその製造方法
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TWI673874B (zh) 2019-10-01
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TW201838185A (zh) 2018-10-16
CN110392928A (zh) 2019-10-29

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