SG11201907741PA - Field-effect transistor, method for producing same, display element, display device, and system - Google Patents

Field-effect transistor, method for producing same, display element, display device, and system

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Publication number
SG11201907741PA
SG11201907741PA SG11201907741PA SG11201907741PA SG11201907741PA SG 11201907741P A SG11201907741P A SG 11201907741PA SG 11201907741P A SG11201907741P A SG 11201907741PA SG 11201907741P A SG11201907741P A SG 11201907741PA SG 11201907741P A SG11201907741P A SG 11201907741PA
Authority
SG
Singapore
Prior art keywords
chome
tokyo
nakamagome
company
international
Prior art date
Application number
SG11201907741PA
Inventor
Sadanori Arae
Yuichi Ando
Yuki Nakamura
Yukiko Abe
Shinji Matsumoto
Yuji Sone
Naoyuki Ueda
Ryoichi Saotome
Minehide Kusayanagi
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority claimed from PCT/JP2018/010350 external-priority patent/WO2018169024A1/en
Publication of SG11201907741PA publication Critical patent/SG11201907741PA/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1251—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs

Abstract

INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 20 September 2018 (20.09.2018) WIPO I PCT (51) International Patent Classification: HO1L 29/423 (2006.01) HO1L 29/66 (2006.01) HO1L 29/417(2006.01) (21) International Application Number: PCT/JP2018/010350 (22) International Filing Date: 15 March 2018 (15.03.2018) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 2017-053733 17 March 2017 (17.03.2017) JP 2018-045946 13 March 2018 (13.03.2018) JP (71) Applicant (for all designated States except US): RICOH COMPANY, LTD. [JP/JP]; 3-6, Nakamagome 1-chome, Ohta-ku, Tokyo, 1438555 (JP). (72) Inventors; and (71) Applicants (for US only): ARAE, Sadanori [JP/JP]; c/ o Ricoh Company, Ltd., 3-6, Nakamagome 1-chome, Oh- ta-ku, Tokyo, 1438555 (JP). ANDO, Yuichi [JP/JP]; c/ o Ricoh Company, Ltd., 3-6, Nakamagome 1-chome, Oh- ta-ku, Tokyo, 1438555 (JP). NAKAMURA, Yuki [JP/JP]; c/o Ricoh Company, Ltd., 3-6, Nakamagome 1-chome, Oh- ta-ku, Tokyo, 1438555 (JP). ABE, Yukiko [JP/JP]; c/o Ri- coh Company, Ltd., 3-6, Nakamagome 1-chome, Ohta-ku, Tokyo, 1438555 (JP). MATSUMOTO, Shinji [JP/JP]; c/ o Ricoh Company, Ltd., 3-6, Nakamagome 1-chome, Oh- ta-ku, Tokyo, 1438555 (JP). SONE, Yuji [JP/JP]; c/o Ri- coh Company, Ltd., 3-6, Nakamagome 1-chome, Ohta-ku, Tokyo, 1438555 (JP). UEDA, Naoyuki [JP/JP]; c/o Ri- coh Company, Ltd., 3-6, Nakamagome 1-chome, Ohta-ku, Tokyo, 1438555 (JP). SAOTOME, Ryoichi [JP/JP]; c/o Ricoh Company, Ltd., 3-6, Nakamagome 1-chome, Oh- ta-ku, Tokyo, 1438555 (JP). KUSAYANAGI, Minehide [JP/JP]; c/o Ricoh Company, Ltd., 3-6, Nakamagome 1- chome, Ohta-ku, Tokyo, 1438555 (JP). (74) Agent: ITOH, Tadashige et al.; 16th Floor, Marunouchi MY PLAZA (Meiji Yasuda Seimei Building), 1-1, Marunouchi 2-chome, Chiyoda-ku, Tokyo, 1000005 (JP). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, = (54) Title: FIELD-EFFECT TRANSISTOR, METHOD FOR PRODUCING SAME, DISPLAY ELEMENT, DISPLAY DEVICE, AND SYSTEM [Fig. 1A] 10 15 mu °million °nolo om mo mum° oimIE (10) International Publication Number WO 2018/169024 Al // ► X 13 O cr 00 O C (57) : () To miniaturize a field-effect transistor. (Means of Achieving the ) A field-effect transistor includes a semiconductor film formed on a base, a gate insulating film formed on a part of the semiconductor film, a gate electrode formed on the gate insulating film, and a source electrode and a drain electrode formed in contact with the semiconductor film, wherein a thickness of the source electrode and the drain electrode is smaller than a thickness of the gate insulating film, and the gate insulating film includes a region that is not in contact with the source electrode or the drain electrode. [Continued on next page] WO 2018/169024 Al MIDEDIMOMMIDIIMMOIDEMIEHOMIDEHEMOVOIS TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3))
SG11201907741PA 2017-03-17 2018-03-15 Field-effect transistor, method for producing same, display element, display device, and system SG11201907741PA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017053733 2017-03-17
JP2018045946A JP2018157206A (en) 2017-03-17 2018-03-13 Field-effect transistor and method of manufacturing the same, display element, display device, and system
PCT/JP2018/010350 WO2018169024A1 (en) 2017-03-17 2018-03-15 Field-effect transistor, method for producing same, display element, display device, and system

Publications (1)

Publication Number Publication Date
SG11201907741PA true SG11201907741PA (en) 2019-09-27

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Family Applications (1)

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SG11201907741PA SG11201907741PA (en) 2017-03-17 2018-03-15 Field-effect transistor, method for producing same, display element, display device, and system

Country Status (5)

Country Link
EP (1) EP3596757A1 (en)
JP (1) JP2018157206A (en)
CN (1) CN110392928A (en)
SG (1) SG11201907741PA (en)
TW (1) TWI673874B (en)

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JPH0687503B2 (en) * 1987-03-11 1994-11-02 株式会社日立製作所 Thin film semiconductor device
JP2940880B2 (en) * 1990-10-09 1999-08-25 三菱電機株式会社 Semiconductor device and manufacturing method thereof
JP2000196099A (en) * 1998-12-28 2000-07-14 Matsushita Electronics Industry Corp Thin-film transistor and manufacture thereof
US7211825B2 (en) * 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
US7473593B2 (en) * 2006-01-11 2009-01-06 International Business Machines Corporation Semiconductor transistors with expanded top portions of gates
KR20080094300A (en) * 2007-04-19 2008-10-23 삼성전자주식회사 Thin film transistor and method of manufacturing the same and flat panel display comprising the same
US7649205B2 (en) * 2008-05-30 2010-01-19 Palo Alto Research Center Incorporated Self-aligned thin-film transistor and method of forming same
JP5633346B2 (en) * 2009-12-25 2014-12-03 株式会社リコー Field effect transistor, semiconductor memory, display element, image display apparatus and system
JP5776192B2 (en) * 2010-02-16 2015-09-09 株式会社リコー Field effect transistor, display element, image display apparatus and system
JP2012216780A (en) * 2011-03-31 2012-11-08 Ricoh Co Ltd P-type oxide, p-type oxide manufacturing composition, p-type oxide manufacturing method, semiconductor element, display element, image display device and system
JP2014123670A (en) * 2012-12-21 2014-07-03 Panasonic Corp Thin film transistor and manufacturing method of the same
CN103199113B (en) * 2013-03-20 2018-12-25 京东方科技集团股份有限公司 Thin film transistor (TFT) and preparation method thereof, array substrate, display device
JP6264090B2 (en) * 2013-07-31 2018-01-24 株式会社リコー FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING FIELD EFFECT TRANSISTOR
JP2016111360A (en) * 2014-11-28 2016-06-20 株式会社リコー Field effect transistor and field effect transistor manufacturing method
CN105870169A (en) * 2016-04-18 2016-08-17 京东方科技集团股份有限公司 Thin-film transistor and manufacturing method thereof, array substrate and display device

Also Published As

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JP2018157206A (en) 2018-10-04
EP3596757A1 (en) 2020-01-22
TW201838185A (en) 2018-10-16
CN110392928A (en) 2019-10-29
TWI673874B (en) 2019-10-01

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