EP3583623A1 - Pièce moulée de soudure pour le soudage par diffusion, son procédé de fabrication et son procédé de montage - Google Patents

Pièce moulée de soudure pour le soudage par diffusion, son procédé de fabrication et son procédé de montage

Info

Publication number
EP3583623A1
EP3583623A1 EP18722915.8A EP18722915A EP3583623A1 EP 3583623 A1 EP3583623 A1 EP 3583623A1 EP 18722915 A EP18722915 A EP 18722915A EP 3583623 A1 EP3583623 A1 EP 3583623A1
Authority
EP
European Patent Office
Prior art keywords
solder
layers
solder preform
diffusion
paste
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP18722915.8A
Other languages
German (de)
English (en)
Inventor
Christian Schellenberg
Jörg Strogies
Klaus Wilke
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of EP3583623A1 publication Critical patent/EP3583623A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0244—Powders, particles or spheres; Preforms made therefrom
    • B23K35/025—Pastes, creams, slurries
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/19—Soldering, e.g. brazing, or unsoldering taking account of the properties of the materials to be soldered
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0233—Sheets, foils
    • B23K35/0238—Sheets, foils layered
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0244—Powders, particles or spheres; Preforms made therefrom
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262—Sn as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
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    • B23K35/302—Cu as the principal constituent
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    • B23K35/3033—Ni as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/16—Layered products comprising a layer of metal next to a particulate layer
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83399—Material
    • H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/83438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/83447—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H01L2224/8382—Diffusion bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H01L2224/8382—Diffusion bonding
    • H01L2224/83825—Solid-liquid interdiffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/04—Soldering or other types of metallurgic bonding
    • H05K2203/0415—Small preforms other than balls, e.g. discs, cylinders or pillars
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/20—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
    • H05K3/207—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern using a prefabricated paste pattern, ink pattern or powder pattern
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3457—Solder materials or compositions; Methods of application thereof
    • H05K3/3478—Applying solder preforms; Transferring prefabricated solder patterns
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3457—Solder materials or compositions; Methods of application thereof
    • H05K3/3485—Applying solder paste, slurry or powder

Definitions

  • the invention relates to a solder preform for diffusion soldering, comprising a sandwich structure (hereinafter referred to as sandwich) comprising first layers of a first material and second layers of a second material, the first layers and the second layers alternating in the sandwich.
  • sandwich a sandwich structure
  • the invention relates to a method for producing a solder preform, are layered in the first layers of a first Materi ⁇ than and second layers of a second material to a sand ⁇ wich, wherein the first layers and the second layers in the sandwich alternate with each other.
  • the invention also relates to a method for joining a
  • the joining partners can provide contact materials made of copper, for example.
  • the diffusion solder may be a tin-containing solder material. Due to the diffusion of copper into the solder material during the formation of the soldered connections ⁇ bond then a diffusion zone which is formed by an intermetallic compound between copper and tin is formed becomes. This has a melting point of about 420 °, which is thus clearly above the melting temperature of the tin-based solder material. Due to the necessary Diffu ⁇ sion processes, the diffusion zone can not extend arbitrarily deep into the solder material. Therefore, the soldering connection to be formed is limited to a certain thickness.
  • the solder material at Verflüs ⁇ s In the space between the flexible molding from ⁇ fills.
  • the molding provides the material available, which can diffuse into the solder material. Characterized in that the diffusing material not only by the boundary ⁇ surfaces of the joining partners, but also inside the
  • Solder connection is available, can form a continuous diffusion zone between the joining partners even at a larger joint gap.
  • Feil also describes another way of forming DiffusionslötMISen, in which instead of the flexible molding, a metallic powder is used, for.
  • a metallic powder is used, for.
  • ferpulver This material is added to the solder material and, dispersedly distributed in the solder material, makes available the material which can diffuse into the solder connection while forming the diffusion zone. This also makes it possible to produce a diffusion zone in the solder joint which bridges the gap between the two joining partners.
  • Diffusionslöteducationen between two joining partners can be produced by diffusion of Bestteil turnover from a liquid phase into a solid phase during soldering.
  • a brazing material containing two components is used between the joining partners.
  • a Lotformteil between the joining partners is placed, which consists of a sandwich of layers of the first
  • the use of solder preforms requires a high Rezisi ⁇ on in the production of the solder joints, as these have to touch to form a reliable contact both joined and the diffusion paths in which auslagen- not have been too large to solder joint. This precision is associated with a certain manufacturing effort (such as a high degree of parallelism of the surfaces to be joined) and the resulting costs.
  • the object of the invention is to provide a solder preform for diffusion soldering, a method for its production and a method for its assembly between two joining partners, wherein with the solder preform solder joints adopted güns ⁇ term and can be produced with improved process capability.
  • the first material as metal- is formed from which the first layers Best ⁇ hen.
  • the second material consists of metallic particles which form a paste with a binder, wherein the two ⁇ th layers consist of the paste. From the first material and the second material, a diffusion zone can thus be produced in the solder joint forming during soldering, which preferably consists of intermetallic compounds.
  • the paste can serve as a tolerance compensation, since this is deformable before soldering and therefore the solder preform can be compressed as a whole in the joining direction. The paste is partially displaced from the gap between two adjacent foils.
  • the paste undergoes a certain volume shrinkage during the soldering process, since the binder escapes from the solder joint during the soldering process.
  • the volume shrinkage supports the bridging of manufacturing and Montageto ⁇ leranzen, as this can vary within certain limits.
  • the first material is a solder material and the second material has a higher melting point than the first material.
  • the first material may, for example, a zinnbasierter solder material (in particular a tin-silver-copper solder such as SAC305, with Alloy ⁇ composition Sn96, 5Ag3Cu0, 5, or a tin-copper solder, for example, with the alloy composition Sn99, 3Cu0 7), while the second material is a metal which dissolves in and diffuses into the tin material, preferably copper.
  • the copper material is then fixed by means of the binder, for example by a stencil printing process, between the sheets of the first material, the diffusion paths of the particulate material being determined by the thickness of the sheet of solder material.
  • the second material is a solder material and the first material has a higher melting point. points as the second material.
  • the films of the first material can advantageously be made very thin, wherein the second material is applied in the form of a solder material on the films.
  • a stencil printing method known per se can be used.
  • the object stated at the outset is also achieved by a method for producing a solder preform by forming the first material as a metallic foil, from which the first layers are produced and the second material consists of metallic particles which are added with a binder a paste are processed, wherein the second layers are made from the paste.
  • a method for producing a solder preform by forming the first material as a metallic foil, from which the first layers are produced and the second material consists of metallic particles which are added with a binder a paste are processed, wherein the second layers are made from the paste.
  • Sandwich structure in relation to the gap to be bridged must be increased.
  • solder preforms are produced at the same time by producing the sandwich structure with an area larger than that of the solder preforms and separating the solder preforms from this.
  • a large-area semifinished product is produced, which can be made particularly simple to ⁇ particular with a stencil printing process. This is then separated into the solder preforms. This can be done for example by punching or laser cutting.
  • the solder preforms can be produced in large numbers and, for example, on tapes for the electronics assembly for placement on Heidelbergungsträ ⁇ like to be made available.
  • the stated object is achieved with the initially stated method for joining a diffusion solder joint according to the invention in that a solder preform of the type already described is used. It is particularly advantageous if a solder preform with a used the shrinkage of the solder ⁇ material is considered excess. Outside which a diffusion soldering the tolerances of the end considered excessive may be provided which insbeson ⁇ particular the shrinkage of the solder material be considered excessive is superimposed. As a result, it is advantageously possible to produce diffusion-bonded diffusion joints having high reliability, wherein solder preforms which are cost-effective to manufacture and can be kept in large numbers in the assembly process can be used for this purpose. In particular, a joining is the
  • Figure 3 to 5 selected method steps of exporting approximately ⁇ example the procedure according to the invention Rens ge ⁇ cut for producing a solder preform
  • FIGS. 6 and 7 show selected method steps of exemplary embodiments of the method according to the invention for joining a diffusion solder joint, cut or as a side view.
  • a solder preform 11 according to Figure 1 consists of first layers 12 and second layers 13, which are arranged alternately ( ⁇ represent provided on the left side of a broken line 17).
  • the ers ⁇ th layers 12 are made of a metallic foil 14, which are manufactured in accordance with Figure 1 of a solder material, such as a tin-silver-copper alloy (or other Zinnbasisle- yaw).
  • the second layers 13 consist of a paste, wherein particles 15 are ver ⁇ shares in a binder 16.
  • the particles 15 are made of copper. Alternatively, these may also be formed by nickel.
  • FIG. 1 shows a diffusion solder joint on the right side of the fault line 17 even after the solder molding 11 has been soldered.
  • the reduction in the thickness of the second layers 13 has another reason.
  • Part of the copper is in fact diffused into the first layers 12, so that here Diffusi ⁇ onszonen arise.
  • the first layers 12 are made entirely of the intermetallic compound.
  • the first layers 12 are formed from film 14 made of copper, while the second layers 13 are formed from the paste consisting of particles 15 of a tin-containing solder material and a binder 16.
  • the uppermost layer and the lowermost layer which respectively form the upper joining surface 18 and the lower joining surface 19, made of the solder material, so that a connection to the on adjacent joining partners is possible ( see Figure 6).
  • a multiplicity of solder semi-finished products 11 can be produced from the sandwich construction according to FIG. 4 by separating them by a saw, a punching tool or a knife 22, for example.
  • the knife 22 (or the punch or the saw) cuts along the indicated Dash-dot lines the sandwich structure of Figure 4 in the semi-finished solder 11 with the required size.
  • DiffusionslötMISen 23 can be produced, which connect a first joining partner 24 with a second joining partner 25 and a third joining partner 26.
  • the first joining partner 24 according to FIG. 6 is power semiconductor components which are fastened on the second joining partner 25 of a printed circuit board via the diffusion solder joints 23.
  • the first joining partners 24 on the opposite top also be produced.
  • Diffusion solder joints 23 according to Figure 6 of different thickness, with a tolerance compensation in each case by the second layers (not shown in Figure 6) can take place, which can be compressed more or less strongly depending on tolerance when joining the joining partners.
  • Figure 7 is ones shown, situated in a higher level of detail as the first joining parts 24 in the form of a Bauele ⁇ ment can be connected in the form of a printed circuit board via the diffusion soldering with the second joining partner 25th
  • Both the first joint partner 24 and the second joint partner 25 have metallizations 27 made of copper, to which the solder preform 11 is adjacent.
  • soldering mate ⁇ rial diffuses the metallization 27 in the forming

Abstract

L'invention concerne une pièce moulée de soudure (11) pour le soudage par diffusion. Cette dernière est constituée de feuilles métalliques (12) entre lesquelles est tenue une pâte (16) contenant des particules (15). Les particules peuvent être constituées par exemple de matériau de soudure, tandis que les feuilles (12) sont constituées par exemple de cuivre. Des liaisons intermétalliques de la soudure par diffusion se produisent ainsi dans une zone de diffusion lors de la formation de la soudure. L'avantage de l'application d'une pâte pour la fabrication de la structure en sandwich dans la pièce moulée de soudure (11) consiste en ce que la fabrication est simplifiée et que la pâte (16) peut garantir dans une certaine mesure une compensation de tolérance. L'invention concerne également en plus de la pièce moulée de soudure (11) un procédé de fabrication d'une telle pièce moulée de soudure et un procédé de formation d'une soudure par diffusion avec cette pièce moulée de soudure.
EP18722915.8A 2017-04-25 2018-04-19 Pièce moulée de soudure pour le soudage par diffusion, son procédé de fabrication et son procédé de montage Withdrawn EP3583623A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102017206930.9A DE102017206930A1 (de) 2017-04-25 2017-04-25 Lotformteil zum Diffusionslöten, Verfahren zu dessen Herstellung und Verfahren zu dessen Montage
PCT/EP2018/059971 WO2018197314A1 (fr) 2017-04-25 2018-04-19 Pièce moulée de soudure pour le soudage par diffusion, son procédé de fabrication et son procédé de montage

Publications (1)

Publication Number Publication Date
EP3583623A1 true EP3583623A1 (fr) 2019-12-25

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EP18722915.8A Withdrawn EP3583623A1 (fr) 2017-04-25 2018-04-19 Pièce moulée de soudure pour le soudage par diffusion, son procédé de fabrication et son procédé de montage

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Country Link
US (1) US20200139490A1 (fr)
EP (1) EP3583623A1 (fr)
JP (1) JP6927638B2 (fr)
KR (1) KR102226143B1 (fr)
CN (1) CN110546759A (fr)
DE (1) DE102017206930A1 (fr)
WO (1) WO2018197314A1 (fr)

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DE102019217061A1 (de) * 2019-11-06 2021-05-06 Zf Friedrichshafen Ag Anordnung mit einem Substrat für eine Aufnahme von wenigstens einem Halbleiterbauelement für einen Stromrichter und Verfahren zum Diffusionsverlöten wenigstens eines Halbleiterbauelements mit einem Substrat für einen Stromrichter

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03184694A (ja) * 1989-12-11 1991-08-12 Tdk Corp 半田シート並びにその貼着方法
DE19930190C2 (de) * 1999-06-30 2001-12-13 Infineon Technologies Ag Lötmittel zur Verwendung bei Diffusionslötprozessen
JP2001085832A (ja) * 1999-09-13 2001-03-30 Omron Corp 電子部品実装構造とその実装方法
DE20320259U1 (de) * 2002-02-06 2004-04-01 Endress + Hauser Gmbh + Co. Kg Lot und Lotverbindung
US7565996B2 (en) * 2004-10-04 2009-07-28 United Technologies Corp. Transient liquid phase bonding using sandwich interlayers
JP2007044701A (ja) * 2005-08-05 2007-02-22 Fuji Electric Device Technology Co Ltd 鉛フリー化はんだ材
US20090004500A1 (en) 2007-06-26 2009-01-01 Daewoong Suh Multilayer preform for fast transient liquid phase bonding
AT10735U1 (de) * 2008-05-21 2009-09-15 Austria Tech & System Tech Verfahren zur herstellung einer leiterplatte sowie verwendung und leiterplatte
DE102008055134A1 (de) * 2008-12-23 2010-07-01 Robert Bosch Gmbh Elektrisches oder elektronisches Verbundbauteil sowie Verfahren zum Herstellen eines elektrischen oder elektronischen Verbundbauteils
DE102010013610B4 (de) * 2010-03-22 2013-04-11 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum stoffschlüssigen Verbinden von elektronischen Bauelementen oder Kontaktelementen und Substraten
US8431445B2 (en) * 2011-06-01 2013-04-30 Toyota Motor Engineering & Manufacturing North America, Inc. Multi-component power structures and methods for forming the same
US8513806B2 (en) * 2011-06-30 2013-08-20 Rohm Co., Ltd. Laminated high melting point soldering layer formed by TLP bonding and fabrication method for the same, and semiconductor device
DE102011083926A1 (de) * 2011-09-30 2013-04-04 Robert Bosch Gmbh Schichtverbund aus einer Trägerfolie und einer Schichtanordnung umfassend eine sinterbare Schicht aus mindestens einem Metallpulver und eine Lotschicht
DE102013219642A1 (de) 2013-09-27 2015-04-02 Siemens Aktiengesellschaft Verfahren zum Diffusionslöten unter Ausbildung einer Diffusionszone als Lötverbindung und elektronische Baugruppe mit einer solchen Lötverbindung
CN108430690B (zh) * 2016-02-01 2021-05-14 株式会社村田制作所 接合材料、使用该接合材料的接合方法和接合结构

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KR102226143B1 (ko) 2021-03-09
CN110546759A (zh) 2019-12-06
DE102017206930A1 (de) 2018-10-25
KR20190129940A (ko) 2019-11-20
US20200139490A1 (en) 2020-05-07
JP6927638B2 (ja) 2021-09-01
WO2018197314A1 (fr) 2018-11-01
JP2020518456A (ja) 2020-06-25

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