EP3506341A1 - Übertragungsverfahren einer nutzschicht auf ein trägersubstrat - Google Patents

Übertragungsverfahren einer nutzschicht auf ein trägersubstrat Download PDF

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Publication number
EP3506341A1
EP3506341A1 EP18213125.0A EP18213125A EP3506341A1 EP 3506341 A1 EP3506341 A1 EP 3506341A1 EP 18213125 A EP18213125 A EP 18213125A EP 3506341 A1 EP3506341 A1 EP 3506341A1
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EP
European Patent Office
Prior art keywords
donor substrate
zone
substrate
cavity
useful layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP18213125.0A
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English (en)
French (fr)
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EP3506341B1 (de
Inventor
Lamine BENAISSA
Thierry SALVETAT
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Publication of EP3506341A1 publication Critical patent/EP3506341A1/de
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/005—Bulk micromachining
    • B81C1/00507—Formation of buried layers by techniques other than deposition, e.g. by deep implantation of elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0111—Bulk micromachining
    • B81C2201/0116—Thermal treatment for structural rearrangement of substrate atoms, e.g. for making buried cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates

Definitions

  • the invention relates to the technical field of transfer of a useful layer, belonging to a donor substrate, on a support substrate.
  • the donor substrate and / or the support substrate is provided with at least one surface cavity.
  • the invention finds particular application in the manufacture of a membrane on the cavity, used for mechanical microsystems (MEMS), for example in a pressure sensor, a resonator, a microphone or a biochemical sensor.
  • MEMS mechanical microsystems
  • the transferred useful layer can also be used as a protective cover, for example for a component, or as a hermetic encapsulation means.
  • Such a method of the state of the art makes it possible to obtain a satisfactory control of the thickness of the transferred useful layer as well as a good uniformity of the thickness on the support substrate.
  • a method of the state of the art is not entirely satisfactory insofar as D1 teaches that the thickness of the useful layer, denoted t, defines a theoretical maximum width of the cavity, denoted W lim , which is proportional to t 2 .
  • W lim a theoretical maximum width of the cavity
  • a width of the cavity greater than W lim will lead to a failure of the useful layer transferred to the support substrate, which is related to the bubbling formation (" blistering "in English) of the species implanted in the cavity.
  • the skilled person seeks, for a fixed thickness of the useful layer, to push the limits of the maximum width of the cavity beyond which there is a failure of the useful layer transferred to the support substrate.
  • such a method according to the invention makes it possible, by virtue of the presence of such an amorphous zone, to push back the limits of the maximum width of the cavity beyond which a failure of the useful layer transferred onto the substrate is observed. support.
  • such an amorphous zone makes it possible to locally inhibit the bubbling of the implanted species, caused by the gas resulting from the recombination of said species.
  • this inhibition of the bubbling of the implanted species makes it possible to transfer a thin useful layer, without fearing its mechanical failure, even his break. Inhibition of the bubbling of implanted species is increased when the amorphous zone is completely opposite the cavity at the end of step b).
  • such an amorphous zone has a lower Young's modulus than a monocrystalline structure (for example of the order of 20% lower for amorphous silicon compared with monocrystalline silicon), which makes it possible to reduce the risks. propagation of a crack during step c).
  • the fact that the amorphous zone extends parallel to the weakening zone allows a fracture of the donor substrate during step c) which operates parallel to the cavity.
  • the method according to the invention may comprise one or more of the following characteristics.
  • the cavity is formed at the first surface of the support substrate; and the bonding of step b) takes place between the first surface of the donor substrate and the first surface of the support substrate.
  • the support substrate comprises pillars, extending to the first surface of the support substrate, and partially delimiting the cavity; and the bonding of step b) takes place between the first surface of the donor substrate and the pillars of the support substrate.
  • the donor substrate provided during step a) comprises pillars, extending to the first surface of the donor substrate, and partially delimiting the cavity; and the bonding of step b) takes place between the pillars of the donor substrate and the first surface of the support substrate.
  • the support substrate comprises pillars, extending to the first surface of the support substrate, and partially delimiting a first cavity;
  • the donor substrate provided in step a) comprises pillars, extending to the first surface of the donor substrate, and partially delimiting a second cavity; and the bonding of step b) takes place between the pillars of the donor substrate and the pillars of the support substrate so as to join the first and second cavities and form the cavity.
  • the method comprises a step d) of recrystallizing the amorphous zone, step d) being carried out after step c); step d) being preferably performed by solid phase epitaxial resumption.
  • the amorphous zone is recrystallized during step d) in order to reconstruct the crystalline structure of the useful layer, and this from the crystalline material surrounding the amorphous zone.
  • Step d) is essential when it is desired to form an electronic device from the useful layer.
  • step a 1 ) consists in implanting ionized species into the donor substrate, through the first surface of the donor substrate, said ionized species preferably comprising at least one of the species selected from H + , He + , B + .
  • step a 2 consists in implanting species into the useful layer, through the first surface of the donor substrate, said species being preferably silicon ions or germanium ions.
  • an advantage obtained is to easily obtain a "buried" amorphous zone, that is to say located at a distance from the first surface of the donor substrate, which is not possible with a deposition technique.
  • step a 2 is performed so that the amorphous region extends away from the first surface of the donor substrate.
  • an advantage provided by such a buried amorphous zone, closer to the weakening zone, is to improve the effectiveness of the inhibition of the bubbling of the implanted species, caused by the gas resulting from the recombination of said species.
  • a buried amorphous zone makes it possible to improve the quality of the recrystallization during step d).
  • another advantage provided by such a buried amorphous zone is that it can be suppressed simply by sacrificial oxidation or thinning.
  • the useful layer of the donor substrate provided during step a) has a density density, denoted ⁇ 1 ; and step 2) is performed so that the amorphous region has a bulk density, denoted ⁇ 2, ⁇ 2 ⁇ ⁇ satisfying 1/10.
  • an advantage provided is to improve the effectiveness of the inhibition of bubbling implanted species.
  • the useful layer of the donor substrate provided in step a) has a thickness, denoted t, defining a theoretical maximum width of the cavity, denoted W lim , which is proportional to t 2 ; and step a 2 ) is performed so that the amorphous region forms a periodic grating with a pitch, denoted p, satisfying p ⁇ W lim , the periodic grating extending parallel to the first surface of the donor substrate.
  • an advantage provided by such a periodic network is to be able to obtain excellent inhibition of the bubbling of the implanted species, and without having to have an amorphous zone extending completely opposite the cavity at the end of the step b) - involving an alignment that can be tricky to operate.
  • step c) is performed by applying thermal annealing to the assembly obtained at the end of step b).
  • the thermal annealing temperature is the plateau value of the heating temperature.
  • semiconductor is meant that the material has an electrical conductivity at 300 K of between 10 8 S / cm and 10 3 S / cm.
  • the cavity or cavities 200 are formed at the first surface 20 of the support substrate 2, preferably by photolithography and etching steps.
  • the support substrate 2 comprises a second surface 21, opposite to the first surface 20.
  • the first surface 20 of the support substrate 2 may be covered with an oxide layer.
  • the oxide layer may be a thermal oxide.
  • the first surface 20 of the support substrate 2 may be covered with a metal layer.
  • the metal layer is made of a metallic material, preferably selected from Au, Cu, Ti, W.
  • the first surface 30 of the donor substrate 3 is advantageously covered with an oxide layer in order to promote hydrophilic bonding during step b) .
  • the first surface 30 of the donor substrate 3 is advantageously covered with a metal layer, preferably of the same metal, in order to promote thermocompression bonding during the treatment. step b).
  • the donor substrate 3 has a monocrystalline structure.
  • the parameters will be adapted according to the desired thickness for the useful layer 1.
  • the donor substrate 3 is made of monocrystalline silicon
  • an energy of 160 keV and a dose of 6 ⁇ 10 16 at.cm -2 lead to a thickness of 1.5 ⁇ m for the useful layer 1.
  • the useful layer 1 of the donor substrate 3 provided during step a) has a density density, noted ⁇ 1 .
  • Step a2) is advantageously performed so that the amorphous region 4 has a volumetric density, denoted ⁇ 2, ⁇ satisfying 2 ⁇ ⁇ 1/10.
  • the useful layer 1 of the donor substrate 3 provided in step a) has a thickness, denoted t, defining a theoretical maximum width of the cavity, denoted W lim , which is proportional to t 2 , as described in D1.
  • step a 2 ) is executed so that the amorphous zone 4 forms a periodic grating with a pitch, noted p, satisfying p ⁇ W lim , the periodic grating extending parallel to the first surface 30 of the donor substrate 3.
  • W lim is of the order of 40 ⁇ m.
  • step b) takes place between the first surface 30 of the donor substrate 3 and the first surface 20 of the support substrate 2.
  • support substrate 2 is provided with a single cavity 200, step b) is performed so that the amorphous zone 4 is at least partially opposite the cavity 200.
  • step b) is carried out so that the amorphous zone 4 is at least partially opposite each cavity 200.
  • the side of the first surface 30 of the donor substrate 3 is defined by the orientation of the normal to the first surface 30 of the donor substrate 3.
  • the side of the first surface 20 of the support substrate 2 is defined by the orienting the normal to the first surface 20 of the support substrate 2.
  • the bonding performed during step b) is advantageously a bonding by direct adhesion between the first surface 30 of the donor substrate 3 and the first surface 20 of the support substrate 2.
  • direct adhesion is meant a spontaneous bonding resulting from the contacting two surfaces, that is to say in the absence of an additional element such as glue, wax or solder.
  • the adhesion comes mainly from the van der Waals forces resulting from the electronic interaction between atoms or molecules of two surfaces, hydrogen bonds due to surface preparations or covalent bonds established between two surfaces.
  • molecular bonding or direct bonding Bonding by direct adhesion can not be likened to thermocompression bonding, eutectic bonding, or anodic bonding.
  • the bonding performed during step b) may be a thermocompression bonding or eutectic bonding depending on the nature of the first surface 30 of the donor substrate 3 and the first surface 20 of the support substrate 2.
  • Step b) is advantageously preceded by a preparation of the first surface 30 of the donor substrate 3 and a preparation of the first surface 20 of the support substrate 2.
  • a preparation of the first surface 30 of the donor substrate 3 and a preparation of the first surface 20 of the support substrate 2 is advantageously preceded by a preparation of the first surface 30 of the donor substrate 3 and a preparation of the first surface 20 of the support substrate 2.
  • direct bonding it is possible to chemically activate the first surfaces 20, 30, for example with the aid of a Caro acid (produced by a mixture of H 2 SO 4 and H 2 O 2 ), and then to clean the first surfaces 20, 30 by a standard RCA type process.
  • CMP chemical mechanical polishing
  • scrubber a cleaning brush
  • Step b) is advantageously carried out in a controlled atmosphere medium.
  • step b) can be performed under high vacuum such that a secondary vacuum of less than 10 -2 mbar.
  • Step c) is illustrated in figure 1f .
  • Step c) of splitting (" splitting " in English) is advantageously performed by applying thermal annealing to the assembly obtained at the end of step b).
  • Thermal annealing is applied according to a thermal budget adapted to fracture the donor substrate 3 according to the zone of weakening ZS.
  • the thermal annealing temperature is preferably between 350 ° C and 550 ° C.
  • the duration of the thermal annealing is preferably between 5 minutes and 3 hours.
  • Step c) is advantageously preceded by a step of applying thermal annealing to the assembly obtained during step b) according to a heat budget adapted to reinforce the bonding without initiating the fracture of the donor substrate 3 according to the zone ZS embrittlement.
  • the method advantageously comprises a step d) of recrystallizing the amorphous zone 4, step d) being carried out after step c).
  • Step d) is illustrated in figure 1g .
  • Step d) is advantageously carried out by solid phase epitaxial resumption.
  • an advantage provided is to be able to easily reconstruct a crystalline structure for the useful layer 1.
  • Step d) is essential when it is desired to form an electronic device from the useful layer 1.
  • the step a 2 ) is advantageously performed so that the amorphous zone 4 has a mass crystallinity of less than or equal to 20%, which improves the quality of the recrystallization.
  • Step d) is performed by applying thermal annealing.
  • the amorphous zone 4 is amorphous silicon, the recrystallization starts at 450 ° C.
  • the method may also comprise dry or wet etching steps, as well as cleaning steps of the useful layer 1.
  • step d) is optional.
  • step a 2 can be performed so that the amorphous area 4 has a mass crystallinity of less than or equal to 80%.
  • a polycrystalline structure of the amorphous zone 4 is perfectly suitable when an electronic device does not have to be formed from the useful layer 1.
  • the pillars 6 are advantageously made of a metallic material, preferably copper.
  • the pillars 6 are formed at the first surface 20 of the support substrate 2 by electrodeposition (ECD for " Electro-Chemical Deposition ").
  • ECD Electro-Chemical Deposition
  • the bonding performed during step b) is advantageously a thermocompression bonding.
  • Such a useful layer 1 transferred locally forms a protective cover, preferably hermetic, on the support substrate 2, so as to form an encapsulation means.
  • a transferred useful layer 1 forms a means of encapsulation that is more effective than an ad hoc layer deposited, pierced and then recapped.
  • step d) is optional.
  • step a 2 can be performed so that the amorphous zone 4 has a mass crystallinity of less than or equal to 80%.
  • a polycrystalline structure of the amorphous zone 4 is perfectly suitable when an electronic device does not have to be formed from the useful layer 1.
  • the pillars 6 'are advantageously made of a metallic material, preferably copper.
  • ECD Electro-Chemical Deposition
  • the bonding performed during step b) is advantageously a thermocompression bonding.
  • Such a useful layer 1 transferred locally forms a protective cover, preferably hermetic, on the support substrate 2, so as to form an encapsulation means.
  • a transferred useful layer 1 forms a means of encapsulation that is more effective than an ad hoc layer deposited, pierced and then recapped.
  • step d) is optional.
  • step a 2 can be performed so that the amorphous area 4 has a mass crystallinity of less than or equal to 80%.
  • a polycrystalline structure the amorphous zone 4 is perfectly suitable when an electronic device does not have to be formed from the useful layer 1.
  • the pillars 6 of the support substrate 2 and the pillars 6 'of the donor substrate 3 are advantageously made of a metallic material, preferably copper.
  • the pillars 6 of the support substrate 2 and the pillars 6 'of the donor substrate 3 are respectively formed at the first surface 20 of the support substrate 2 and at the first surface 30 of the donor substrate 3 by electrodeposition (ECD for " ElectroChemical Deposition ").
  • ECD ElectroChemical Deposition
  • the bonding performed in step b) is advantageously thermocompression bonding.
  • Such a useful layer 1 transferred locally forms a protective cover, preferably hermetic, on the support substrate 2, so as to form an encapsulation means.
  • a transferred useful layer 1 forms a means of encapsulation that is more effective than an ad hoc layer deposited, pierced and then recapped.
  • the invention is not limited to the exposed embodiments. Those skilled in the art are able to consider their technically operating combinations, and to substitute equivalents for them.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
EP18213125.0A 2017-12-28 2018-12-17 Übertragungsverfahren einer nutzschicht auf ein trägersubstrat Active EP3506341B1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1763342A FR3076292B1 (fr) 2017-12-28 2017-12-28 Procede de transfert d'une couche utile sur un substrat support

Publications (2)

Publication Number Publication Date
EP3506341A1 true EP3506341A1 (de) 2019-07-03
EP3506341B1 EP3506341B1 (de) 2020-07-29

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EP (1) EP3506341B1 (de)
FR (1) FR3076292B1 (de)

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FR3076292B1 (fr) * 2017-12-28 2020-01-03 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de transfert d'une couche utile sur un substrat support
FR3091032B1 (fr) * 2018-12-20 2020-12-11 Soitec Silicon On Insulator Procédé de transfert d’une couche superficielle sur des cavités
FR3091620B1 (fr) * 2019-01-07 2021-01-29 Commissariat Energie Atomique Procédé de transfert de couche avec réduction localisée d’une capacité à initier une fracture
FR3108204B1 (fr) * 2020-03-10 2023-10-27 Commissariat Energie Atomique Procédé de suspension d’une couche mince sur une cavité avec effet raidisseur obtenu par pressurisation de la cavité par des espèces implantées
FR3108787B1 (fr) * 2020-03-31 2022-04-01 Commissariat Energie Atomique Procédé basse température de transfert et de guérison d’une couche semi-conductrice
CN112259675B (zh) * 2020-10-19 2022-10-28 济南晶正电子科技有限公司 一种具有图案的薄膜键合体、制备方法及电子器件
US11955374B2 (en) * 2021-08-29 2024-04-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming SOI substrate

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US20190202688A1 (en) 2019-07-04
US11401162B2 (en) 2022-08-02
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FR3076292A1 (fr) 2019-07-05

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