EP3317888B1 - Méthode de fabrication d'un composant électrique - Google Patents
Méthode de fabrication d'un composant électrique Download PDFInfo
- Publication number
- EP3317888B1 EP3317888B1 EP16735609.6A EP16735609A EP3317888B1 EP 3317888 B1 EP3317888 B1 EP 3317888B1 EP 16735609 A EP16735609 A EP 16735609A EP 3317888 B1 EP3317888 B1 EP 3317888B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- carrier element
- resistance layer
- electrical component
- onto
- applying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims description 39
- 239000010410 layer Substances 0.000 claims description 79
- 239000000463 material Substances 0.000 claims description 51
- 230000001419 dependent effect Effects 0.000 claims description 14
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 12
- 239000000919 ceramic Substances 0.000 claims description 12
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 238000005245 sintering Methods 0.000 claims description 10
- 229910044991 metal oxide Inorganic materials 0.000 claims description 7
- 150000004706 metal oxides Chemical class 0.000 claims description 7
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 6
- 239000005751 Copper oxide Substances 0.000 claims description 6
- 239000012790 adhesive layer Substances 0.000 claims description 6
- 229910000431 copper oxide Inorganic materials 0.000 claims description 6
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 6
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 6
- 239000011787 zinc oxide Substances 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 5
- 238000007650 screen-printing Methods 0.000 claims description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 238000007639 printing Methods 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 229910000679 solder Inorganic materials 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 12
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 238000009529 body temperature measurement Methods 0.000 description 2
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052863 mullite Inorganic materials 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910000914 Mn alloy Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- UTICYDQJEHVLJZ-UHFFFAOYSA-N copper manganese nickel Chemical compound [Mn].[Ni].[Cu] UTICYDQJEHVLJZ-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
- H01C7/042—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient mainly consisting of inorganic non-metallic substances
- H01C7/043—Oxides or oxidic compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/01—Mounting; Supporting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
- H01C1/1413—Terminals or electrodes formed on resistive elements having negative temperature coefficient
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
- H01C1/142—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors the terminals or tapping points being coated on the resistive element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
- H01C1/144—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors the terminals or tapping points being welded or soldered
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
- H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
- H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
- H01C17/06533—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component composed of oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/28—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/003—Thick film resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
- H01C7/042—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient mainly consisting of inorganic non-metallic substances
- H01C7/043—Oxides or oxidic compounds
- H01C7/044—Zinc or cadmium oxide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
- H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
- H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
- H01C17/06533—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component composed of oxides
- H01C17/06546—Oxides of zinc or cadmium
Definitions
- the invention relates to a method for producing an electrical component, in particular for producing an electrical component with a temperature-dependent resistance characteristic.
- the invention further relates to an electrical component, in particular an electrical component with a temperature-dependent resistance characteristic.
- Electrical components with temperature-dependent resistance behavior can be used to measure temperatures.
- the electrical resistance decreases as the temperature rises.
- Such electrical components have a material whose resistance value depends on the ambient temperature.
- the temperature-sensitive resistance material is usually arranged in a housing of the component, for example an SMD housing.
- the components are usually arranged with their housing on the surface of the body.
- the disadvantage of such an arrangement is that the thermal coupling of the material with the temperature-dependent resistance characteristic to the body whose temperature is to be determined is not optimal due to the surrounding housing of the component. For example, there is an air gap between the temperature-sensitive material and the housing of the component, through which the heat transfer from the surface of the body to the temperature-sensitive material and the temperature measurement is ultimately distorted.
- the publication EN 10 2013 226 294 A1 describes a resistance component with a ceramic substrate on whose surface a resistance layer is applied.
- the resistance layer is designed to be wire-bondable and is made from a thick film paste.
- the thick film paste is first applied to the surface of the ceramic substrate using screen printing.
- the thick film paste is then dried on the surface of the ceramic substrate and subsequently sintered.
- the publication WO 2012 111386 A1 discloses a PTC thermistor comprising an insulating ceramic substrate and a thermistor thick film embedded therein, which has PTC properties and can thus be considered as a resistance layer.
- the thermistor thick film consists of a sintered semiconductor ceramic body and is sandwiched by a pair of metallic electrodes which are opposite to each other.
- the publication CN103943290 A further discloses a resistance component with a negative temperature coefficient of resistance, which essentially comprises an insulating base layer, an electrode and a thick film resistance layer, wherein the insulating base layer consists of a mullite composite material reinforced with mullite fibers.
- the publication EP0895252A1 further discloses a thick film composition comprising 60-80 wt.% silver powder and 0.1-15 wt.% fine particles of glass binder having a softening point of 400 to 650°C.
- the publication US2010039211A1 discloses a resistance component comprising: a substrate; a resistance layer disposed on the substrate and comprising a copper alloy; an electrode unit electrically connected to the resistance layer; and a protective layer covering at least a portion of the upper oxide layer.
- the copper alloy is a nickel-copper-manganese alloy
- An aim of the present invention is to provide a method for producing an electrical component in which the coupling of a material that is temperature-sensitive in terms of its resistance to a surface of a body whose temperature is to be determined is improved. Furthermore, an electrical component is to be provided in which the coupling of the material that is temperature-sensitive in terms of its resistance to the surface of a body whose temperature is to be determined is improved.
- An embodiment of a method for producing such an electrical component is specified in claim 1.
- the method provides for the provision of a carrier element and the provision of a material having a temperature-dependent resistance as a non-sintered, calcined metal oxide.
- the material comprises one of nickel oxide, manganese oxide, copper oxide and zinc oxide or combinations thereof.
- the material is applied to a surface of the carrier element to produce a resistance layer. To bond the resistance layer to the carrier element, the resistance layer is subsequently sintered.
- the surface temperature of a body for example the surface temperature of a container
- a non-electrically conductive material is therefore used for the carrier element.
- An electrically conductive ceramic for example an NTC thermistor material in the case of an NTC component, can be used.
- the specified method provides a new manufacturing process for temperature-sensitive electrical components, with which components can be manufactured whose resistance layer can be well coupled to a substrate via the carrier element.
- a non-sintered material is used for the resistance layer.
- a calcined metal oxide powder can be used.
- a screen-printable ceramic paste is made from this starting material.
- the paste can be applied to the carrier element in the form of any structure.
- the structures can, for example, be printed onto the material of the carrier element.
- the temperature-sensitive material of the resistance layer does not yet have its final properties. The material only takes on its final properties after the sintering process.
- a temperature sensor element can be produced whose sensitive ceramic layer is firmly bonded to the electrically non-conductive but thermally highly conductive material of the carrier element via a sintering process. This can be used for temperature measurement applications in which a temperature sensor element is coupled via flat surfaces, whereby maximum thermal coupling is achieved and the thermal mass can be minimized.
- the electrical component comprises a carrier element and a resistance layer made of a material that has a temperature-dependent resistance.
- the material contains a calcined metal oxide comprising one of nickel oxide, manganese oxide, copper oxide and zinc oxide or combinations thereof.
- the resistance layer is arranged on a surface of the carrier element and bonded to the carrier element by a sintering process.
- Figure 1 shows an embodiment of a method for producing a temperature-sensitive electrical component 1.
- Various embodiments of the electrical component 1 are shown in the following Figures 2A, 2B , 3A and 3B The procedure is shown below using Figure 1 explained, also referring to the Figures 2A to 3B shown embodiments of the method.
- a carrier element 10 is first provided.
- a material that has a temperature-dependent resistance is also provided.
- the material is applied to a surface O10 of the carrier element 10 to produce a resistance layer 20 on the carrier element.
- the resistance layer 20 is sintered to connect the resistance layer 20 to the carrier element 10.
- electrodes 30a, 30b are applied to the electrical component manufactured up to that point in order to apply a voltage to the resistance layer 20 of the component. At least one of the electrodes 30a and 30b can be arranged on a surface O20 of the resistance layer 20 or on a further surface U10 of the carrier element 10.
- the temperature-sensitive electrical component 1 comprises the carrier element 10 and the resistance layer 20 made of a material that has a temperature-dependent resistance.
- the resistance layer 20 is arranged on the surface O10 of the carrier element 10 and is bonded to the carrier element 10 by a sintering process.
- the temperature-sensitive electrical component of the Figures 2A to 3B furthermore the electrodes 30a and 30b. At least one of the electrodes 30a and 30b is arranged on the surface O20 of the resistance layer 20 or on a further surface U10 of the carrier element 10.
- the carrier element 10 is preferably made of a non-electrically conductive material.
- the carrier layer 10 of the Figures 2A to 3B The electrical component shown therefore preferably has a material for the carrier element 10 that is not electrically conductive.
- the carrier element 10 in method step A can preferably be provided from a material which has highly thermally conductive properties.
- the carrier element 10 can, for example, be made of a material which has a thermal conductivity of at least 15 W/K.
- the electrical component 1 shown therefore preferably comprises a highly thermally conductive material, for example a material with a thermal conductivity of at least 15 W/K.
- the carrier element 10 can be provided, for example, from a material made of aluminum oxide or aluminum nitride or combinations thereof. According to process step A, the material in the Figures 2A to 3B The electrical component shown can therefore comprise a material made of aluminum oxide or aluminum nitride or combinations thereof.
- the carrier element 10 can have a thickness between 100 ⁇ m and 2 mm.
- the material of the resistance layer 20 is provided, for example, as a material that is not sintered, before the resistance layer is applied to the carrier element 10.
- the material of the resistance layer 20 can be provided as a calcined metal oxide that is not sintered.
- the resistance layer 20 in method step B can be provided from a material made of nickel oxide, manganese oxide, copper oxide, zinc oxide or combinations thereof.
- the temperature-sensitive electrical component 1 shown preferably has a non-sintered material as the material for the resistance layer 20.
- the resistance layer 20 can, for example, be a calcined metal oxide which is not sintered.
- the resistance layer 20 can contain nickel oxide, manganese oxide, copper oxide, zinc oxide or combinations thereof.
- the resistance layer 20 can have a layer thickness between 5 ⁇ m and 15 ⁇ m.
- the material of the resistance layer 20 can first be provided as a screen-printable ceramic paste that is not yet sintered and therefore does not yet have its final properties.
- a structure of the resistance layer 20 can be printed onto the carrier element 10.
- the structure of the resistance layer 20 can be printed onto the carrier element 10 in particular by means of a screen printing process before the resistance layer is sintered and is thereby firmly bonded to the carrier element.
- the printable paste can be designed as a metal oxide-ceramic powder mixture with an NTC characteristic. Since the paste is not yet sintered when applied to the carrier element, the material of the resistance layer 20 does not yet have its final properties at the time of printing, which it only assumes after the sintering process. The stability of the temperature-sensitive electrical component is therefore higher than if pastes were used that already have their final properties when applied to the carrier element 10, for example pastes that contain a sintered material.
- the production of the screen-printable ceramic paste makes it possible to print any structures onto the material of the carrier element 10 and to bond them thermally and mechanically to the material of the carrier element 10.
- the temperature-sensitive electrical component has a high level of mechanical stability. Furthermore, the electrical component has a high level of thermal conductivity and at the same time ensures electrical insulation between the material of the resistance layer 20 and a substrate onto which the carrier element 10 is applied.
- the electrodes 30a and 30b for applying a voltage to the resistance layer 20 are applied to the surface O20 of the resistance layer 20.
- the two electrodes 30a and 30b can be arranged, for example, on the upper side of the resistance layer 20.
- one of the electrodes 30a is arranged on the surface O20 of the resistance layer 20 and a further electrode 30b is arranged on a surface U10 of the carrier element 10.
- the electrode 30a can be applied, for example, on the upper side of the resistance layer 20.
- the electrode 30b can be arranged on the underside of the carrier element 10.
- the electrode 30b can be connected to the resistance layer 20, for example, via a via 60 through the carrier element 10.
- the electrodes 30a and 30b can be applied to the surface O20 of the resistance layer 20 or to the surface U10 of the carrier element 10 by means of a screen printing or sputtering process.
- FIG 3A shows the Figure 2A shown embodiment of the temperature-sensitive electrical component 1, wherein additionally on the underside U10 of the carrier element 10 an adhesive layer 40 for gluing the electrical component 1 on a substrate.
- the adhesive layer 40 can be, for example, a highly thermally conductive adhesive with which the underside U10 of the carrier element 10 is coated.
- the carrier element 10 can be glued directly to the surface of a body whose temperature is to be measured by means of the adhesive layer 40 attached to the underside of the carrier element 10.
- a user can also provide the underside U10 of the carrier element 10 with an adhesive layer 40 himself.
- FIG 3B shows an embodiment of the temperature-sensitive electrical component 1 according to the Figure 2B shown embodiment, wherein the underside U10 of the carrier element 10 is coated with a silver layer 50.
- the silver layer 50 makes it possible to solder the carrier element 10 onto a substrate in order to determine the temperature of the substrate.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Thermistors And Varistors (AREA)
- Non-Adjustable Resistors (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Claims (13)
- Procédé de fabrication d'un composant électrique, ledit procédé comprenant les étapes suivantes :- fournir un élément de support (10),- fournir un matériau, qui présente une résistance dépendant de la température, sous la forme d'un oxyde métallique calciné non fritté qui comprend l'un parmi l'oxyde de nickel, l'oxyde de manganèse, l'oxyde de cuivre et l'oxyde de zinc ou des combinaisons de ceux-ci,- appliquer le matériau sur une surface (O10) de l'élément de support (10) afin de générer une couche de résistance (20) sur l'élément de support (10),- fritter ensuite la couche de résistance (20) afin de relier la couche de résistance (20) à l'élément de support (10).
- Procédé selon la revendication 1, comprenant l'étape suivante :
appliquer des électrodes (30a, 30b) destinées à appliquer une tension à la couche de résistance (20), au moins une des électrodes (30a, 30b) étant disposée sur une surface (O20) de la couche de résistance (20) ou sur une autre surface (U10) de l'élément de support (10) . - Procédé selon l'une des revendications 1 ou 2, comprenant l'étape suivante :
fournir l'élément de support (10) comprenant un matériau non électriquement conducteur qui présente une conductivité thermique d'au moins 15 W/K. - Procédé selon l'une des revendications 1 à 3, comprenant l'étape suivante :
fournir l'élément de support (10) comprenant un matériau comprenant de l'oxyde d'aluminium ou du nitrure d'aluminium ou des combinaisons de ceux-ci. - Procédé selon l'une des revendications 1 à 4, comprenant les étapes suivantes :- fournir le matériau de la couche de résistance (20) sous la forme d'une pâte de céramique apte à la sérigraphie avant d'appliquer la couche de résistance (20) sur l'élément de support (10),- imprimer une structure de la couche de résistance (20) sur l'élément de support (10) avant de fritter la couche de résistance (20) à l'aide d'un procédé de sérigraphie.
- Procédé selon l'une des revendications 2 à 5, comprenant l'étape suivante :
appliquer les électrodes (30a, 30b) au moyen d'un procédé de sérigraphie ou de pulvérisation cathodique sur la surface (O20) de la couche de résistance (20) ou sur l'autre surface (U10) de l'élément de support (10). - Procédé selon l'une des revendications 1 à 6, comprenant les étapes suivantes :- appliquer la couche de résistance (20) sur un côté supérieur (O10) de l'élément de support (10),- appliquer une couche adhésive (40) sur un côté inférieur (U10) de l'élément de support (10) afin de coller le composant électrique (1) sur un substrat.
- Procédé selon l'une des revendications 1 à 6, comprenant les étapes suivantes :- appliquer la couche de résistance (20) sur un côté supérieur (O10) de l'élément de support (10),- appliquer une couche d'argent (50) sur un côté inférieur (U10) de l'élément de support (10) afin de souder le composant électrique (1) sur un substrat.
- Composant électrique fabriqué par le procédé selon la revendication 1, comprenant :- un élément de support (10),- une couche de résistance (20) formée d'un matériau qui a une résistance dépendant de la température, le matériau contenant un oxyde métallique calciné comprenant l'un parmi l'oxyde de nickel, l'oxyde de manganèse, l'oxyde de cuivre et l'oxyde de zinc ou des combinaisons de ceux-ci,- la couche de résistance (20) étant disposée sur une surface (O10) de l'élément de support (10) et étant reliée à l'élément de support (10) par un processus de frittage.
- Composant électrique selon la revendication 9, comprenant :- des électrodes (30a, 30b) destinées à appliquer une tension sur la couche de résistance (20),- au moins une des électrodes (30a, 30b) étant disposée sur une surface (O20) de la couche de résistance (20) ou sur une autre surface (U10) de l'élément de support (10).
- Composant électrique selon l'une des revendications 9 ou 10,
le matériau de l'élément de support (10) n'étant pas électriquement conducteur et présentant une conductivité thermique d'au moins 15 W/K. - Composant électrique selon l'une des revendications 9 à 11,- l'élément de support (10) ayant une épaisseur comprise entre 100 µm et 2 mm,- la couche de résistance (20) ayant une épaisseur de couche comprise entre 5 um et 15 um.
- Composant électrique selon l'une des revendications 9 à 12, l'élément de support (10) contenant un matériau comprenant de l'oxyde d'aluminium ou du nitrure d'aluminium ou des combinaisons de ceux-ci .
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102015110607.8A DE102015110607A1 (de) | 2015-07-01 | 2015-07-01 | Verfahren zur Herstellung eines elektrischen Bauelements |
PCT/EP2016/065038 WO2017001415A1 (fr) | 2015-07-01 | 2016-06-28 | Procédé de fabrication d'un composant électrique |
Publications (2)
Publication Number | Publication Date |
---|---|
EP3317888A1 EP3317888A1 (fr) | 2018-05-09 |
EP3317888B1 true EP3317888B1 (fr) | 2024-05-01 |
Family
ID=56360373
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP16735609.6A Active EP3317888B1 (fr) | 2015-07-01 | 2016-06-28 | Méthode de fabrication d'un composant électrique |
Country Status (5)
Country | Link |
---|---|
US (1) | US10446298B2 (fr) |
EP (1) | EP3317888B1 (fr) |
JP (1) | JP2018522425A (fr) |
DE (1) | DE102015110607A1 (fr) |
WO (1) | WO2017001415A1 (fr) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0895252A1 (fr) * | 1997-07-29 | 1999-02-03 | E.I. Du Pont De Nemours And Company | Composition à base d'argent pour des couches de contact épaisses |
US20100039211A1 (en) * | 2008-08-13 | 2010-02-18 | Chung-Hsiung Wang | Resistive component and method of manufacturing the same |
WO2012111386A1 (fr) * | 2011-02-17 | 2012-08-23 | 株式会社村田製作所 | Thermistance à coefficient de température positif |
CN103943290A (zh) * | 2014-04-01 | 2014-07-23 | 中国人民解放军国防科学技术大学 | 可用于制备厚膜电阻器的莫来石复合材料绝缘基片、厚膜电阻器及其制备方法 |
DE102013226294A1 (de) * | 2013-12-17 | 2015-06-18 | Conti Temic Microelectronic Gmbh | Widerstandsbauelement, dessen Herstellung und Verwendung |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1193582B (de) * | 1958-10-27 | 1965-05-26 | Welwyn Electric Ltd | Verfahren zur Herstellung von elektrischen Widerstandsschichten |
JPS6095976A (ja) * | 1983-10-31 | 1985-05-29 | Hitachi Ltd | 固体撮像装置 |
US4647895A (en) * | 1985-05-08 | 1987-03-03 | Motorola, Inc. | Ceramic temperature sensor |
JPS6225402A (ja) * | 1985-07-26 | 1987-02-03 | 日立東部セミコンダクタ株式会社 | 感温装置とその製造方法 |
JP2733667B2 (ja) * | 1988-07-14 | 1998-03-30 | ティーディーケイ株式会社 | 半導体磁器組成物 |
US5246628A (en) * | 1990-08-16 | 1993-09-21 | Korea Institute Of Science & Technology | Metal oxide group thermistor material |
JP2555536B2 (ja) * | 1993-09-24 | 1996-11-20 | コーア株式会社 | 白金温度センサの製造方法 |
JPH07307208A (ja) * | 1994-05-13 | 1995-11-21 | Nippondenso Co Ltd | 摺動抵抗体 |
US5491118A (en) * | 1994-12-20 | 1996-02-13 | E. I. Du Pont De Nemours And Company | Cadmium-free and lead-free thick film paste composition |
JP3349036B2 (ja) * | 1995-06-14 | 2002-11-20 | 三菱電機株式会社 | 測温用抵抗体、その製法および該測温用抵抗体を用いる赤外線検知素子 |
JP3711857B2 (ja) * | 2000-10-11 | 2005-11-02 | 株式会社村田製作所 | 負の抵抗温度特性を有する半導体磁器組成物及び負特性サーミスタ |
WO2002075751A1 (fr) * | 2001-03-20 | 2002-09-26 | Vishay Intertechnology, Inc. | Thermistances a couche mince |
JP4073673B2 (ja) | 2002-01-28 | 2008-04-09 | 進工業株式会社 | 抵抗器の製造方法 |
KR100894967B1 (ko) * | 2005-02-08 | 2009-04-24 | 가부시키가이샤 무라타 세이사쿠쇼 | 표면 실장형 부특성 서미스터 |
EP1930299A4 (fr) * | 2005-09-28 | 2009-12-02 | Nec Corp | Materiau a changement de phase et dispositif de regulation thermique |
WO2008004552A1 (fr) * | 2006-07-04 | 2008-01-10 | Kabushiki Kaisha Toshiba | corps soudé céramique/métal, procédé de fabrication du corps soudé et dispositif semi-conducteur utilisant le corps soudé |
EP2189430A4 (fr) * | 2007-08-22 | 2018-04-04 | Murata Manufacturing Co. Ltd. | Matière céramique semi-conductrice et thermistance à coefficient de température négatif |
US8257619B2 (en) * | 2008-04-18 | 2012-09-04 | E I Du Pont De Nemours And Company | Lead-free resistive composition |
HUE034429T2 (en) * | 2009-09-15 | 2018-02-28 | Toshiba Kk | Ceramic circuit board and method for producing it |
CN102313249B (zh) * | 2010-07-01 | 2014-11-26 | 惠州元晖光电股份有限公司 | 可调白色的方法及其应用 |
WO2012035938A1 (fr) * | 2010-09-14 | 2012-03-22 | 株式会社村田製作所 | Élément céramique à semi-conducteur et procédé de fabrication associé |
JP5976678B2 (ja) * | 2011-12-20 | 2016-08-24 | 株式会社東芝 | セラミックス銅回路基板 |
-
2015
- 2015-07-01 DE DE102015110607.8A patent/DE102015110607A1/de active Pending
-
2016
- 2016-06-28 US US15/741,286 patent/US10446298B2/en active Active
- 2016-06-28 EP EP16735609.6A patent/EP3317888B1/fr active Active
- 2016-06-28 WO PCT/EP2016/065038 patent/WO2017001415A1/fr active Application Filing
- 2016-06-28 JP JP2018517490A patent/JP2018522425A/ja active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0895252A1 (fr) * | 1997-07-29 | 1999-02-03 | E.I. Du Pont De Nemours And Company | Composition à base d'argent pour des couches de contact épaisses |
US20100039211A1 (en) * | 2008-08-13 | 2010-02-18 | Chung-Hsiung Wang | Resistive component and method of manufacturing the same |
WO2012111386A1 (fr) * | 2011-02-17 | 2012-08-23 | 株式会社村田製作所 | Thermistance à coefficient de température positif |
DE102013226294A1 (de) * | 2013-12-17 | 2015-06-18 | Conti Temic Microelectronic Gmbh | Widerstandsbauelement, dessen Herstellung und Verwendung |
CN103943290A (zh) * | 2014-04-01 | 2014-07-23 | 中国人民解放军国防科学技术大学 | 可用于制备厚膜电阻器的莫来石复合材料绝缘基片、厚膜电阻器及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
US10446298B2 (en) | 2019-10-15 |
WO2017001415A1 (fr) | 2017-01-05 |
JP2018522425A (ja) | 2018-08-09 |
US20180197662A1 (en) | 2018-07-12 |
EP3317888A1 (fr) | 2018-05-09 |
DE102015110607A1 (de) | 2017-01-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP1271117B1 (fr) | Capteur de température à platine | |
EP2044599B1 (fr) | Dispositif de résistance | |
EP2038624B1 (fr) | Composant electrique a element capteur et procede pour encapsuler un element capteur | |
EP0972288B1 (fr) | Procede pour produire un dispositif de detection destine a la mesure de temperatures | |
EP3371562B1 (fr) | Élément capteur et procédé de fabrication d'un élément capteur | |
EP2917712A2 (fr) | Capteur de température et procede de production d'un capteur de température | |
EP3189527B1 (fr) | Composant électrique, agencement de composant électrique et méthodes de leur fabrication | |
DE69733806T2 (de) | Verfahren zum befestigen eines elektrischen kontakts auf einer keramikschicht und ein auf diese weise gefertigtes widerstandselement | |
EP1774543A1 (fr) | Composant electrique muni d'electrodes externes et procede pour produire un composant electrique muni d'electrodes externes | |
EP3317888B1 (fr) | Méthode de fabrication d'un composant électrique | |
DE2615473B2 (de) | Meßwiderstand für ein Widerstandsthermometer | |
DE19736855A1 (de) | Schaltungsanordnung mit einem SMD-Bauelement, insbesondere Temperatursensor und Verfahren zur Herstellung eines Temperatursensors | |
DE102007046907A1 (de) | Manteldraht und Schichtwiderstand | |
WO2017080901A1 (fr) | Élément capteur et procédé de fabrication d'un élément capteur | |
DE102007049145A1 (de) | Piezoaktor und Verfahren zu dessen Herstellung | |
DE102005024865B3 (de) | Messelement, insbesondere Hochtemperaturmesselement | |
DE1791233B1 (de) | Verfahren zur Herstellung eines Funktionsblocks,insbesondere fuer datenverarbeitende Anlagen | |
DE3232404C2 (de) | Keramischer Kaltleiter mit Metallbelägen und daran durch Klemmkontakt angeschlossenen Stromzuführungen | |
DE102010000042A1 (de) | Elektrisches Heizungselement und ein Verfahren zu dessen Herstellung | |
DE10230712A1 (de) | Elektronikeinheit | |
DE102006061956A1 (de) | Glühstiftkerze | |
DE7908388U1 (de) | Schreibzeiger mit elektrischem heizelement |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE |
|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE |
|
17P | Request for examination filed |
Effective date: 20171213 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
|
AX | Request for extension of the european patent |
Extension state: BA ME |
|
DAV | Request for validation of the european patent (deleted) | ||
DAX | Request for extension of the european patent (deleted) | ||
RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: TDK ELECTRONICS AG |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: EXAMINATION IS IN PROGRESS |
|
17Q | First examination report despatched |
Effective date: 20200422 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: EXAMINATION IS IN PROGRESS |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01C 1/144 20060101ALI20230314BHEP Ipc: H01C 17/065 20060101ALI20230314BHEP Ipc: H01C 7/04 20060101AFI20230314BHEP |
|
GRAP | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOSNIGR1 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: GRANT OF PATENT IS INTENDED |
|
INTG | Intention to grant announced |
Effective date: 20230502 |
|
GRAJ | Information related to disapproval of communication of intention to grant by the applicant or resumption of examination proceedings by the epo deleted |
Free format text: ORIGINAL CODE: EPIDOSDIGR1 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: EXAMINATION IS IN PROGRESS |
|
GRAP | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOSNIGR1 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: GRANT OF PATENT IS INTENDED |
|
INTC | Intention to grant announced (deleted) | ||
INTG | Intention to grant announced |
Effective date: 20230719 |
|
GRAJ | Information related to disapproval of communication of intention to grant by the applicant or resumption of examination proceedings by the epo deleted |
Free format text: ORIGINAL CODE: EPIDOSDIGR1 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: EXAMINATION IS IN PROGRESS |
|
GRAP | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOSNIGR1 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: GRANT OF PATENT IS INTENDED |
|
INTC | Intention to grant announced (deleted) | ||
INTG | Intention to grant announced |
Effective date: 20231128 |
|
GRAS | Grant fee paid |
Free format text: ORIGINAL CODE: EPIDOSNIGR3 |
|
GRAA | (expected) grant |
Free format text: ORIGINAL CODE: 0009210 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE PATENT HAS BEEN GRANTED |
|
AK | Designated contracting states |
Kind code of ref document: B1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
|
REG | Reference to a national code |
Ref country code: GB Ref legal event code: FG4D Free format text: NOT ENGLISH |
|
REG | Reference to a national code |
Ref country code: CH Ref legal event code: EP |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R096 Ref document number: 502016016504 Country of ref document: DE |
|
REG | Reference to a national code |
Ref country code: IE Ref legal event code: FG4D Free format text: LANGUAGE OF EP DOCUMENT: GERMAN |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: DE Payment date: 20240620 Year of fee payment: 9 |
|
REG | Reference to a national code |
Ref country code: LT Ref legal event code: MG9D |
|
REG | Reference to a national code |
Ref country code: NL Ref legal event code: MP Effective date: 20240501 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: IS Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20240901 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: BG Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20240501 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: FI Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20240501 Ref country code: HR Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20240501 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: GR Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20240802 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: PT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20240902 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: NL Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20240501 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: ES Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20240501 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: PL Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20240501 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: LV Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20240501 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: RS Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20240801 |