EP3311396A4 - SELF-CENTERING CHAIN CARRIER SYSTEM FOR CHEMICAL STEAM DEPOSITION - Google Patents

SELF-CENTERING CHAIN CARRIER SYSTEM FOR CHEMICAL STEAM DEPOSITION Download PDF

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Publication number
EP3311396A4
EP3311396A4 EP16815048.0A EP16815048A EP3311396A4 EP 3311396 A4 EP3311396 A4 EP 3311396A4 EP 16815048 A EP16815048 A EP 16815048A EP 3311396 A4 EP3311396 A4 EP 3311396A4
Authority
EP
European Patent Office
Prior art keywords
self
vapor deposition
chemical vapor
supporting system
wafer supporting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP16815048.0A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP3311396A1 (en
Inventor
Sandeep Krishnan
Alexander Gurary
Chenghung Paul Chang
Earl MARCELO
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Veeco Instruments Inc
Original Assignee
Veeco Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Veeco Instruments Inc filed Critical Veeco Instruments Inc
Publication of EP3311396A1 publication Critical patent/EP3311396A1/en
Publication of EP3311396A4 publication Critical patent/EP3311396A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
EP16815048.0A 2015-06-22 2016-06-10 SELF-CENTERING CHAIN CARRIER SYSTEM FOR CHEMICAL STEAM DEPOSITION Withdrawn EP3311396A4 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201562183166P 2015-06-22 2015-06-22
US201562241482P 2015-10-14 2015-10-14
US201662298540P 2016-02-23 2016-02-23
PCT/US2016/037022 WO2016209647A1 (en) 2015-06-22 2016-06-10 Self-centering wafer carrier system for chemical vapor deposition

Publications (2)

Publication Number Publication Date
EP3311396A1 EP3311396A1 (en) 2018-04-25
EP3311396A4 true EP3311396A4 (en) 2019-02-20

Family

ID=57585441

Family Applications (1)

Application Number Title Priority Date Filing Date
EP16815048.0A Withdrawn EP3311396A4 (en) 2015-06-22 2016-06-10 SELF-CENTERING CHAIN CARRIER SYSTEM FOR CHEMICAL STEAM DEPOSITION

Country Status (4)

Country Link
EP (1) EP3311396A4 (https=)
JP (1) JP2018522401A (https=)
SG (1) SG11201708235WA (https=)
WO (1) WO2016209647A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110223950B (zh) * 2019-07-11 2024-05-14 通威太阳能（成都）有限公司 一种用于化学气相沉积硅基薄膜钝化层的托盘结构及其制作方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0465819A (ja) * 1990-07-06 1992-03-02 Nissin Electric Co Ltd 気相成長装置
US6893507B2 (en) * 1997-11-03 2005-05-17 Asm America, Inc. Self-centering wafer support system
JP2007042844A (ja) * 2005-08-03 2007-02-15 Furukawa Co Ltd 気相成長装置及びサセプタ
US20140283748A1 (en) * 2013-03-22 2014-09-25 Kabushiki Kaisha Toshiba Semiconductor manufacturing apparatus and semiconductor wafer holder

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3068914B2 (ja) * 1991-09-30 2000-07-24 株式会社東芝 気相成長装置
JP2007035775A (ja) * 2005-07-25 2007-02-08 Hitachi Kokusai Electric Inc 基板処理装置
JP2007042896A (ja) * 2005-08-03 2007-02-15 Furukawa Co Ltd 気相成長装置
US20090025636A1 (en) * 2007-07-27 2009-01-29 Applied Materials, Inc. High profile minimum contact process kit for hdp-cvd application
US20090165721A1 (en) * 2007-12-27 2009-07-02 Memc Electronic Materials, Inc. Susceptor with Support Bosses
JP2009277958A (ja) * 2008-05-16 2009-11-26 Nuflare Technology Inc 成膜装置及び成膜方法
US8486726B2 (en) 2009-12-02 2013-07-16 Veeco Instruments Inc. Method for improving performance of a substrate carrier
JP5496721B2 (ja) * 2010-03-17 2014-05-21 株式会社ニューフレアテクノロジー 成膜装置および成膜方法
US8591700B2 (en) * 2010-08-19 2013-11-26 Stmicroelectronics Pte Ltd. Susceptor support system
TW201218301A (en) * 2010-10-28 2012-05-01 Applied Materials Inc Apparatus having improved substrate temperature uniformity using direct heating methods
US10167571B2 (en) * 2013-03-15 2019-01-01 Veeco Instruments Inc. Wafer carrier having provisions for improving heating uniformity in chemical vapor deposition systems
JP6180208B2 (ja) * 2013-07-08 2017-08-16 株式会社ニューフレアテクノロジー 気相成長装置および気相成長方法
JP6226677B2 (ja) * 2013-10-02 2017-11-08 株式会社ニューフレアテクノロジー 半導体製造装置および半導体製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0465819A (ja) * 1990-07-06 1992-03-02 Nissin Electric Co Ltd 気相成長装置
US6893507B2 (en) * 1997-11-03 2005-05-17 Asm America, Inc. Self-centering wafer support system
JP2007042844A (ja) * 2005-08-03 2007-02-15 Furukawa Co Ltd 気相成長装置及びサセプタ
US20140283748A1 (en) * 2013-03-22 2014-09-25 Kabushiki Kaisha Toshiba Semiconductor manufacturing apparatus and semiconductor wafer holder

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2016209647A1 *

Also Published As

Publication number Publication date
WO2016209647A1 (en) 2016-12-29
EP3311396A1 (en) 2018-04-25
SG11201708235WA (en) 2017-11-29
JP2018522401A (ja) 2018-08-09

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