JP2018522401A - 化学蒸着のための自己心合ウエハキャリアシステム - Google Patents

化学蒸着のための自己心合ウエハキャリアシステム Download PDF

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Publication number
JP2018522401A
JP2018522401A JP2017560537A JP2017560537A JP2018522401A JP 2018522401 A JP2018522401 A JP 2018522401A JP 2017560537 A JP2017560537 A JP 2017560537A JP 2017560537 A JP2017560537 A JP 2017560537A JP 2018522401 A JP2018522401 A JP 2018522401A
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JP
Japan
Prior art keywords
wafer carrier
wafer
self
rotating tube
edge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2017560537A
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English (en)
Japanese (ja)
Other versions
JP2018522401A5 (https=
Inventor
サンディープ クリシュナン，
サンディープ クリシュナン，
アレグザンダー グラリー，
アレグザンダー グラリー，
チェンフン ポール チャン，
チェンフン ポール チャン，
アール マルセロ，
アール マルセロ，
Original Assignee
ビーコ インストゥルメンツ インコーポレイテッド
ビーコ インストゥルメンツ インコーポレイテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ビーコ インストゥルメンツ インコーポレイテッド, ビーコ インストゥルメンツ インコーポレイテッド filed Critical ビーコ インストゥルメンツ インコーポレイテッド
Publication of JP2018522401A publication Critical patent/JP2018522401A/ja
Publication of JP2018522401A5 publication Critical patent/JP2018522401A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
JP2017560537A 2015-06-22 2016-06-10 化学蒸着のための自己心合ウエハキャリアシステム Pending JP2018522401A (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201562183166P 2015-06-22 2015-06-22
US62/183,166 2015-06-22
US201562241482P 2015-10-14 2015-10-14
US62/241,482 2015-10-14
US201662298540P 2016-02-23 2016-02-23
US62/298,540 2016-02-23
PCT/US2016/037022 WO2016209647A1 (en) 2015-06-22 2016-06-10 Self-centering wafer carrier system for chemical vapor deposition

Publications (2)

Publication Number Publication Date
JP2018522401A true JP2018522401A (ja) 2018-08-09
JP2018522401A5 JP2018522401A5 (https=) 2019-06-27

Family

ID=57585441

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017560537A Pending JP2018522401A (ja) 2015-06-22 2016-06-10 化学蒸着のための自己心合ウエハキャリアシステム

Country Status (4)

Country Link
EP (1) EP3311396A4 (https=)
JP (1) JP2018522401A (https=)
SG (1) SG11201708235WA (https=)
WO (1) WO2016209647A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110223950B (zh) * 2019-07-11 2024-05-14 通威太阳能（成都）有限公司 一种用于化学气相沉积硅基薄膜钝化层的托盘结构及其制作方法

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0465819A (ja) * 1990-07-06 1992-03-02 Nissin Electric Co Ltd 気相成長装置
JPH0590165A (ja) * 1991-09-30 1993-04-09 Toshiba Corp 気相成長装置
JP2001522142A (ja) * 1997-11-03 2001-11-13 エーエスエム アメリカ インコーポレイテッド 改良された低質量ウェハ支持システム
JP2007035775A (ja) * 2005-07-25 2007-02-08 Hitachi Kokusai Electric Inc 基板処理装置
JP2007042896A (ja) * 2005-08-03 2007-02-15 Furukawa Co Ltd 気相成長装置
JP2007042844A (ja) * 2005-08-03 2007-02-15 Furukawa Co Ltd 気相成長装置及びサセプタ
JP2009277958A (ja) * 2008-05-16 2009-11-26 Nuflare Technology Inc 成膜装置及び成膜方法
JP2011198840A (ja) * 2010-03-17 2011-10-06 Nuflare Technology Inc 成膜装置および成膜方法
JP2015015430A (ja) * 2013-07-08 2015-01-22 株式会社ニューフレアテクノロジー 気相成長装置および気相成長方法
JP2015072989A (ja) * 2013-10-02 2015-04-16 株式会社ニューフレアテクノロジー 半導体製造装置および半導体製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090025636A1 (en) * 2007-07-27 2009-01-29 Applied Materials, Inc. High profile minimum contact process kit for hdp-cvd application
US20090165721A1 (en) * 2007-12-27 2009-07-02 Memc Electronic Materials, Inc. Susceptor with Support Bosses
US8486726B2 (en) 2009-12-02 2013-07-16 Veeco Instruments Inc. Method for improving performance of a substrate carrier
US8591700B2 (en) * 2010-08-19 2013-11-26 Stmicroelectronics Pte Ltd. Susceptor support system
TW201218301A (en) * 2010-10-28 2012-05-01 Applied Materials Inc Apparatus having improved substrate temperature uniformity using direct heating methods
US10167571B2 (en) * 2013-03-15 2019-01-01 Veeco Instruments Inc. Wafer carrier having provisions for improving heating uniformity in chemical vapor deposition systems
CN104064490A (zh) * 2013-03-22 2014-09-24 株式会社东芝 半导体制造装置以及半导体晶片支架

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0465819A (ja) * 1990-07-06 1992-03-02 Nissin Electric Co Ltd 気相成長装置
JPH0590165A (ja) * 1991-09-30 1993-04-09 Toshiba Corp 気相成長装置
JP2001522142A (ja) * 1997-11-03 2001-11-13 エーエスエム アメリカ インコーポレイテッド 改良された低質量ウェハ支持システム
JP2007035775A (ja) * 2005-07-25 2007-02-08 Hitachi Kokusai Electric Inc 基板処理装置
JP2007042896A (ja) * 2005-08-03 2007-02-15 Furukawa Co Ltd 気相成長装置
JP2007042844A (ja) * 2005-08-03 2007-02-15 Furukawa Co Ltd 気相成長装置及びサセプタ
JP2009277958A (ja) * 2008-05-16 2009-11-26 Nuflare Technology Inc 成膜装置及び成膜方法
JP2011198840A (ja) * 2010-03-17 2011-10-06 Nuflare Technology Inc 成膜装置および成膜方法
JP2015015430A (ja) * 2013-07-08 2015-01-22 株式会社ニューフレアテクノロジー 気相成長装置および気相成長方法
JP2015072989A (ja) * 2013-10-02 2015-04-16 株式会社ニューフレアテクノロジー 半導体製造装置および半導体製造方法

Also Published As

Publication number Publication date
WO2016209647A1 (en) 2016-12-29
EP3311396A1 (en) 2018-04-25
SG11201708235WA (en) 2017-11-29
EP3311396A4 (en) 2019-02-20

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