EP3234219B1 - Badzusammensetzung und verfahren zur stromlosen abscheidung von palladium - Google Patents

Badzusammensetzung und verfahren zur stromlosen abscheidung von palladium Download PDF

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EP3234219B1
EP3234219B1 EP15813382.7A EP15813382A EP3234219B1 EP 3234219 B1 EP3234219 B1 EP 3234219B1 EP 15813382 A EP15813382 A EP 15813382A EP 3234219 B1 EP3234219 B1 EP 3234219B1
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Prior art keywords
palladium
group
plating bath
diamine
bath composition
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French (fr)
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EP3234219A1 (de
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Thomas Beck
Gerhard Steinberger
Andreas Walter
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Atotech Deutschland GmbH and Co KG
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Atotech Deutschland GmbH and Co KG
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/42—Coating with noble metals
    • C23C18/44—Coating with noble metals using reducing agents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1617—Purification and regeneration of coating baths
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1646—Characteristics of the product obtained
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1646—Characteristics of the product obtained
    • C23C18/165—Multilayered product
    • C23C18/1651—Two or more layers only obtained by electroless plating

Definitions

  • the present invention relates to aqueous plating bath compositions and methods for electroless plating of palladium in the manufacture of printed circuit boards, IC substrates and for metallization of semiconductor wafers.
  • Electroless deposition of palladium in the manufacture of printed circuit boards, IC substrates and the like as well as metallization of semiconductor wafers is an established technique.
  • the palladium layers are used for example as barrier layers and/or wire-bondable and solderable finishes.
  • Electroless palladium plating bath compositions comprising a source for palladium ions, a nitrogenated complexing agent and a reducing agent selected from formic acid and derivatives thereof are disclosed in US 5,882,736 .
  • Such electroless palladium plating bath compositions are suited to deposit pure palladium in contrast to plating bath compositions containing hypophosphite as reducing agent which result in palladium-phosphorous alloy layers.
  • US patent 4,424,241 describes an electroless plating solution comprising palladium, organic ligands and reducing agents, i.a. formaldehyde and formic acid.
  • the reducing agents are used in high concentrations.
  • concentrations too low slow the deposition rate.
  • JP4351736 B2 describes an aqueous plating bath for the electroless deposition of palladium, said bath comprising a first reducing agent selected from formic acid or salts thereof and a second reducing agent selected from sodium hypophosphite, hypophosphorous acid, formaldehyde and dimethylamine borane, wherein the second reducing agent is provided in a concentration comprised between 0.05 g/L and 1.5 g/L.
  • the deposition rate constantly decreases during bath life and a deposition rate too low finally terminates the life time of an electroless palladium plating bath. This is due to the catalytic effect of already deposited palladium and the autocatalytic deposition mechanism.
  • changing the temperature of an electroless palladium plating bath is used for regulating the deposition rate and duration of bath life. Increasing the bath temperature also increases the deposition rate. But operating the bath at a higher temperature simultaneously increases the risk of destabilising the bath.
  • the stability of such a plating bath means that the plating bath is stable against decomposition, i.e. the undesired precipitation of metallic palladium in the plating bath itself. Accordingly, destabilising an electroless palladium plating bath in turn shortens the bath life. Due to the high price of palladium early discarding of an electroless palladium plating bath is undesired for economic reasons as well.
  • an aqueous plating bath composition for electroless deposition of palladium comprising
  • the aqueous plating bath composition according to the present invention is called the composition or the composition according to the present invention herein.
  • the terms “plating” and “depositing” are used interchangeably herein.
  • the aldehyde compounds according to Formula (I) provide the aqueous plating bath composition according to the present invention with an increased deposition rate for palladium, in particular for pure palladium, and a prolonged life time. Although increasing the deposition rate, the aldehyde compounds according to Formula (I) do not impair the stability of the aqueous plating bath composition according to the present invention against undesired decomposition. Adding the aldehyde compounds according to Formula (I) to an electroless palladium plating bath allows for adjusting the deposition rate to a constant range over the bath life time.
  • the aldehyde compounds according to Formula (I) of the present invention activate electroless palladium plating baths having a low deposition rate even when freshly prepared and reactivate aged electroless palladium plating baths.
  • the aldehyde compounds according to Formula (I) of the present invention allow for electrolessly depositing palladium layers at lower temperatures.
  • the aqueous plating bath composition comprises (iii) at least one aldehyde compound according to Formula (I)
  • R may be -H. In another embodiment R is preferably not -H.
  • R is selected from the group consisting of -H; unsubstituted or substituted, linear alkyl groups comprising 1 to 10 carbon atoms; and unsubstituted or substituted, branched alkyl groups comprising 3 to 10 carbon atoms.
  • R is selected from the group consisting of unsubstituted or substituted, linear alkyl groups comprising 1 to 10 carbon atoms; and unsubstituted or substituted, branched alkyl groups comprising 3 to 10 carbon atoms.
  • the unsubstituted or substituted, linear alkyl groups are preferably selected from unsubstituted or substituted, linear alkyl groups comprising 1 to 8 carbon atoms; more preferably 1 to 5 carbon atoms, even more preferably from 2 to 5 carbon atoms.
  • the unsubstituted or substituted, linear alkyl groups are selected from the group comprising n-pentyl group, n-butyl group, n-propyl group, ethyl group and methyl group; further more preferably from n-butyl group, n-propyl group, ethyl group, and methyl group; most preferably from n-butyl group, n-propyl group, and ethyl group.
  • the unsubstituted or substituted, branched alkyl groups are preferably selected from unsubstituted or substituted, branched alkyl groups comprising 3 to 8 carbon atoms; more preferably 3 to 5 carbon atoms.
  • the unsubstituted or substituted, branched alkyl groups are selected from the group comprising 2-pentyl (sec-pentyl) group, 3-pentyl group, 2-methylbutyl group, 3-methylbutyl (iso-pentyl) group, 3-methylbut-2-yl group, 2-methylbut-2-yl group; 2,2-dimethylpropyl (neo-pentyl) group, iso-butyl group, sec-butyl group, tert-butyl group, and iso-propyl group; most preferably from iso-butyl group, sec-butyl group, and iso-propyl group.
  • the unsubstituted or substituted aryl groups are preferably selected from unsubstituted or substituted aryl groups comprising 6 to 10 carbon atoms; more preferably from unsubstituted or substituted phenyl groups and unsubstituted or substituted naphthyl groups; most preferably from unsubstituted or substituted phenyl groups.
  • the linear alkyl groups, the branched alkyl groups, or the aryl groups are preferably substituted.
  • the substituents are selected independently from each other from the group comprising amino, carboxyl, ester, mercapto, hydroxyl, methoxy, ethoxy, methyl, ethyl, halogen, such as fluorine, chlorine, bromine, iodine; allyl, vinyl, and aryl groups; preferably from amino, carboxyl, ester, hydroxyl, methoxy, ethoxy, methyl, ethyl, halogen, such as fluorine, chlorine, bromine, iodine; and aryl groups; even more preferably from carboxyl, ester, hydroxyl, methoxy, ethoxy, methyl, ethyl, halogen, such as fluorine, chlorine, bromine, iodine; and aryl groups.
  • the at least one aldehyde compound according to Formula (I) is selected from the group comprising hexanal (hexanaldehyde), pentanal (valeraldehyde), butanal (butyraldehyde), propanal (propionaldehyde), ethanal (acetaldehyde), methanal (formaldehyde), phenylmethanal (benzaldehyde), and 2-phenylacetaldehyde; preferably from n-hexanal, n-pentanal, n-butanal, n-propanal, and ethanal; more preferably from n-pentanal, n-butanal, n-propanal, and ethanal, even more preferably from n-hexanal, n-pentanal, n-butanal, and n-propanal.
  • alkyl refers to a hydrocarbon radical with the general chemical formula C n H 2n+1 , n being an integer from 1 to 10.
  • Alkyl residues according to the present invention can be linear and/or branched and they are preferably saturated.
  • linear alkyl groups comprising 1 to 10 carbon atoms means linear alkyl groups having a number of overall C atoms ranging from 1 to 10, respectively.
  • Branched alkyl groups comprising 3 to 10 carbon atoms means branched alkyl groups in which the sum of C atoms in the main chain plus C atoms in the branching chains results in a number of overall C atoms ranging from 3 to 10, respectively.
  • Linear alkyl groups comprising 1 to 8 carbon atoms or branched alkyl groups comprising 3 to 8 carbon atoms for example include methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl or octyl.
  • Linear alkyl groups comprising 1 to 5 carbon atoms or branched alkyl groups comprising 3 to 5 carbon atoms for example include methyl, ethyl, propyl, butyl, or pentyl.
  • aryl refers to ring-shaped aromatic hydrocarbon radicals, for example phenyl or naphthyl.
  • alkyl and/or aryl can be substituted by replacing an H-atom in each case by a substituent as outlined above for the linear alkyl groups, the branched alkyl groups, and/or the aryl groups.
  • the at least one aldehyde compound according to Formula (I) has a concentration in the aqueous plating bath composition according to the present invention ranging from 0.01 to 25 mg/l; preferably from 0.01 to 10 mg/l, more preferably from 0.1 to 10 mg/l.
  • aldehyde compounds increase the deposition rate of electroless palladium plating baths when contained therein in a concentration below the one used for aldehyde reducing agents.
  • the aqueous plating bath composition according to the present invention comprises at least one source for palladium ions.
  • the at least one source for palladium ions is a water soluble palladium compound. More preferably, the at least one source for palladium ions is selected from the group comprising palladium chloride, palladium acetate, palladium sulfate and palladium perchlorate.
  • complex compounds comprising a palladium ion and a complexing agent, preferably a nitrogenated complexing agent, for palladium ions can be added to the plating bath instead of forming such a complex compound in the plating bath by adding a palladium salt and said complexing agent for palladium ions to the plating bath as separate ingredients.
  • Suitable complex compounds as sources for palladium ions are for example complex compounds comprising palladium ions and complexing agents; preferably nitrogenated complexing agents; more preferably ethane-1,2-diamine and/or alkyl substituted ethane-1,2-diamines.
  • Suitable complex compounds may further comprise counter ions to palladium ions; preferably chloride, acetate, sulfate or perchlorate.
  • Suitable nitrogenated complexing agents and alkyl substituted ethane-1,2-diamines are defined below as complexing agents.
  • suitable complex compounds as sources for palladium ions are for example dichloro ethane-1,2-diamine palladium diacetato ethane-1,2-diamine palladium; dichloro N 1 -methylethane-1,2-diamine palladium; diacetato N 1 -methylethane-1,2-diamine; dichloro N 1 ,N 2 -dimethylethane-1,2-diamine; diacetato N 1 ,N 2 -dimethylethane-1,2-diamine; dichloro N 1 -ethylethane-1,2-diamine; diacetato N 1 -ethylethane-1,2-diamine, dichloro N 1 ,N 2 -diethylethane-1,2-diamine; and diacetato N 1 ,N 2 -diethylethane-1,2-diamine.
  • the concentration of palladium ions in the composition ranges from 0.5 to 500 mmol/l, preferably from 1 to 100 mmol/l.
  • the aqueous plating bath composition according to the present invention further comprises at least one reducing agent for palladium ions.
  • the reducing agent makes the plating bath an autocatalytic, i.e. an electroless plating bath. Palladium ions are reduced to metallic palladium in the presence of said reducing agent.
  • This plating mechanism differentiates the plating bath according to the present invention from 1) immersion-type palladium plating baths which do not contain a reducing agent for palladium ions and 2) plating baths for electroplating of palladium which require an external electrical current in order to deposit a palladium layer.
  • the at least one reducing agent is preferably a chemical reducing agent. Reducing agents provide the electrons necessary to reduce metal ions to their metallic form and thereby form a metal deposit on a substrate.
  • the at least one reducing agent is a reducing agent for depositing pure palladium deposits.
  • Pure palladium deposits are deposits containing palladium in an amount ranging from 98.0 to 99.99 wt.-% or higher, preferably from 99.0 to 99.99 wt.-% or higher.
  • the at least one reducing agent for palladium ions is selected from the group consisting of hydrazine, formic acid, derivatives of the aforementioned and salts thereof, wherein the formic acid derivatives are selected from esters of formic acid.
  • the at least one reducing agent for palladium ions is selected from the group consisting of formic acid, derivatives of formic acid and salts of the aforementioned.
  • the formic acid derivatives are selected from esters of formic acid.
  • esters of formic acid are selected from the group consisting of formic acid methylester, formic acid ethylester and formic acid propylester.
  • Suitable counter ions for salts of formic acid are for example selected from hydrogen, lithium, sodium, potassium and ammonium.
  • the aqueous plating bath composition according to the present invention is particularly suitable for depositing palladium layers in the presence of formic acid, derivatives and salts of the aforementioned as reducing agent.
  • the at least one reducing agent is not formaldehyde.
  • the concentration of the at least one reducing agent in the aqueous plating bath composition according to the present invention ranges from 10 to 1000 mmol/l.
  • the molar ratio of the reducing agent for palladium ions and the palladium ions in the composition according to the present invention ranges from 1 : 10 to 10 : 1; more preferably from 1 : 5 to 5 : 1; even more preferably from 1 : 3 to 3 : 1.
  • the aqueous plating bath composition of the present invention is particularly suitable for depositing pure palladium layers. Pure palladium layers are particularly suitable for high temperature applications like in motor control units as pure palladium layers allow for sufficient thermal stability of bonded or soldered connections.
  • Hypophosphite ions and/or amine borane compounds and/or sodium borhydride are not suitable as the reducing agent because palladium alloy layers are deposited from such plating bath compositions.
  • the aqueous plating bath composition according to the present invention may further comprise at least one complexing agent for palladium ions.
  • a complexing agent (sometimes also referred to as chelating agent) keeps metal ions dissolved and prevents their undesired precipitation from solution.
  • the at least one complexing agent is a nitrogenated complexing agent for palladium ions. More preferably, the at least one nitrogenated complexing agent is selected from the group comprising primary amines, secondary amines and tertiary amines. Even more preferably, the at least one nitrogenated complexing agent is selected from the group comprising diamines, triamines, tetraamines and higher homologues thereof.
  • Suitable amines are for example ethane-1,2-diamine (NH 2 -CH 2 -CH 2 -NH 2 , ethylene diamine); alkyl substituted ethane-1,2-diamines; 1,3-diamino-propane; 1,2-bis (3-amino-propyl-amino)-ethane; diethylene-triamine; diethylene-triaminepenta-acetic acid; N-(2-hydroxy-ethyl)-ethylene-diamine; ethylene-diamine-N,N-diacetic acid; 1,2-diamino-propyl-amine; 1,3-diamino-propyl-amine; 3-(methyl-amino)-propyl-amine; 3-(dimethyl-amino)-propyl-amine; 3-(diethyl-amino)-propyl-amine; bis-(3-amino-propyl)-amine; 1,2-bis-(3-amino-propy
  • Suitable alkyl substituted ethane-1,2-diamines are for example N 1 -methylethane-1,2-diamine (CH 3 -NH-CH 2 -CH 2 -NH 2 ); N 1 ,N 2 -dimethylethane-1,2-diamine (CH 3 -NH-CH 2 -CH 2 -NH-CH 3 ); N 1 ,N 1 -dimethylethane-1,2-diamine ((CH 3 ) 2 -N-CH 2 -CH 2 -NH 2 ); N 1 ,N 1 ,N 2 -trimethylethane-1,2-diamine ((CH 3 ) 2 -N-CH 2 -CH 2 -NH-CH 3 ); N 1 ,N 1 ,N 2 ,N 2 -tetramethylethane-1,2-diamine ((CH 3 ) 2 -N-CH 2 -CH 2 -N-(CH 3 ) 2 ); N 1 -ethylethane
  • the mole ratio of the complexing agent for palladium ions and palladium ions in the composition according to the present invention ranges from 1 : 1 to 50 : 1.
  • the aqueous plating bath composition according to the present invention may further comprise at least one stabilizing agent.
  • Stabilizing agents also referred to as stabilizers, are compounds that stabilize an electroless metal plating solution against undesired outplating in the bulk solution and spontaneous decomposition.
  • the term "outplating" means undesired and/or uncontrolled deposition of the metal on surfaces other than substrate surfaces.
  • the at least one stabilizing agent may be selected from the group comprising compounds of the elements selenium, tellurium, copper, nickel, and iron and/or mercapto-benzothiazole, seleno-cyanates, thiourea, saccharin, ferro-cyanates; 4-nitrobenzoic acid; 3,5-dinitrobenzoic acid; 2,4-dinitrobenzoic acid; 2-hydroxy-3,5-dinitrobenzoic acid; 2-acetylbenzoic acid; 4-nitrophenol and their corresponding ammonium, sodium and potassium salts.
  • the concentration of such further stabilizing agents in the composition according to the present invention ranges from 0.01 to 500 mg/l, more preferably from 0.1 to 200 mg/l, even more preferably from 1 to 200 mg/l, and most preferably from 10 to 100 mg/l.
  • the aqueous plating bath composition according to the present invention is an acidic plating bath.
  • the pH-value of the aqueous plating bath composition more preferably ranges from 4 to 7 because the composition is unstable at a pH-value below 4. Even more preferably, the pH-value of the composition ranges from 5 to 6.
  • the composition is prone to deposit palladium onto the substrate by immersion-type plating resulting in a weak adhesion between the palladium layer and the subjacent substrate.
  • a plating bath composition having a pH-value above 7 would attack organic resist materials such as solder mask materials which may also be a part of the substrate.
  • the present invention further relates to a method for electroless palladium plating comprising the steps of
  • the method steps are performed in the order described above.
  • the substrate has a metal surface.
  • Palladium plating or deposition of palladium is preferably carried out by contacting a substrate having a metal surface with the composition according to the present invention and thereby depositing a layer of palladium onto at least a portion of the metal surface of the substrate.
  • the metal surface or the portion thereof to be coated with palladium is selected from the group comprising copper, copper alloys, nickel, nickel alloys, cobalt, cobalt alloys, platinum, platinum alloys, gold, gold alloys, and gallium arsenide.
  • the metal surface or the portion thereof to be coated is for example part of a printed circuit board, an IC substrate or a semiconducting wafer.
  • Palladium layers are used for example on semiconducting wafers as noble metal, wire-bondable and solderable finishes of semiconductor chips, light emitting diodes (LED) or solar cells.
  • Suitable methods for contacting the substrate with the aqueous plating bath composition are for example dipping the substrate into the composition or spraying the composition onto the substrate.
  • the substrate is contacted with the aqueous plating bath composition according to step b) at a temperature of 30 to 95°C, more preferably of 30 to 85°C, even more preferably of 50 to 85°C, yet even more preferably of 30 to 65°C.
  • the substrate is contacted with the composition for 1 to 60 min, more preferably 10 to 20 min.
  • the substrate is contacted with the aqueous plating bath composition to give a palladium plated layer ranging in thickness from 0.01 to 5.0 ⁇ m, more preferably from 0.02 to 2.0 ⁇ m and even more preferably from 0.05 to 0.5 ⁇ m.
  • the thickness of palladium layers was measured by x-ray fluorescence (XRF) which is well known to persons skilled in the art.
  • XRF x-ray fluorescence
  • the XRF measurements make use of the characteristic fluorescence radiation emitted from a sample (substrate, deposit) being excited with x-rays. By evaluating the wavelength and intensities and assuming a layered structure of the sample, layer thicknesses can be calculated.
  • a thin activation layer of palladium is first deposited onto the substrate, preferably a substrate having a metal surface, by an immersion-type plating method (exchange reaction) followed by palladium deposition from the aqueous plating bath composition according to the present invention.
  • a suitable aqueous activation bath may comprise a palladium salt such as palladium acetate, palladium sulfate and palladium nitrate, a complexing agent for palladium ions such as primary amines, secondary amines, tertiary amines and ethanolamines and an acid such as nitric acid, sulfuric acid and methane sulfonic acid.
  • a palladium salt such as palladium acetate, palladium sulfate and palladium nitrate
  • a complexing agent for palladium ions such as primary amines, secondary amines, tertiary amines and ethanolamines
  • an acid such as nitric acid, sulfuric acid and methane sulfonic acid.
  • such an activation bath further contains an oxidizing agent such as nitrate ions, perchlorate ions, chlorate ions, perborate ions, periodate ions, peroxo-disulfate ions and peroxide ions.
  • an oxidizing agent such as nitrate ions, perchlorate ions, chlorate ions, perborate ions, periodate ions, peroxo-disulfate ions and peroxide ions.
  • the concentration of the palladium salt in the aqueous activation bath ranges from 0.005 to 20 g/l, preferably from 0.05 to 2.0 g/l.
  • the concentration of the complexing agent for palladium ions ranges from 0.01 to 80 g/l, preferably from 0.1 to 8 g/l.
  • the pH-value of the aqueous activation bath preferably ranges from 0 to 5, preferably from 1 to 4.
  • the substrates are immersed in the aqueous activation bath at 25 to 30°C for one to four minutes.
  • the metal surface of the substrate Prior to immersing the substrate in an aqueous activation bath, the metal surface of the substrate is cleaned.
  • etch cleaning is usually carried out in oxidizing, acidic solutions, for example a solution of sulfuric acid and hydrogen peroxide.
  • acidic solution such as, for example, a sulfuric acid solution.
  • the aldehyde compounds according to Formula (I) of the present invention increase the deposition rate of aqueous plating bath compositions for electroless deposition of palladium, in particular for electroless deposition of pure palladium.
  • the aqueous plating bath compositions are activated and the deposition process is accelerated. This contributes to acceleration of the manufacturing process.
  • the deposition rate of known electroless palladium deposition baths usually constantly decreases during bath life. Thus, a longer plating time is required to obtain palladium layers of the same thickness and quality when plating with an aged palladium deposition bath compared to a freshly prepared palladium deposition bath.
  • Adding the aldehyde compounds according to Formula (I) to an electroless palladium plating bath allows for adjusting the deposition rate to a constant range over the bath life time, in particular to a constant high range of deposition rate over the bath life. This ensures depositing palladium layers of constant thickness throughout the life time of an electroless palladium plating bath and facilitates process control of the manufacturing process.
  • the deposition bath is no more suited for depositing palladium and has to be discarded. Adjusting the deposition rate to a constant range over the bath life time, in particular to a constant high range, also prolongs the life time of an electroless palladium plating bath.
  • the aldehyde compounds according to Formula (I) of the present invention activate electroless palladium plating baths having a low deposition rate even when freshly prepared. Further, the aldehyde compounds according to Formula (I) of the present invention reactivate aged electroless palladium plating baths.
  • Aged electroless palladium plating bath means herein an electroless palladium plating bath already used for plating and whose deposition rate already dropped during such usage. Reactivating means herein that the aldehyde compounds according to Formula (I) also increase the deposition rate of an aged electroless palladium plating bath.
  • regulating the deposition rate and duration of bath life is achieved by increasing the bath temperature to between 55 to 95°C during deposition.
  • a raised temperature of the electroless palladium plating baths has several disadvantages. Operating the bath at a higher temperature increases the risk of destabilising the bath. It requires higher energy consumption. It is of disadvantage for layers of some metals also present on the substrate to be plated. For example, aluminium or copper layers suffer corrosion when present on a substrate which is plated with palladium from a deposition bath at higher temperatures.
  • the aldehyde compounds according to Formula (I) of the present invention allow for electrolessly depositing palladium layers at lower temperatures ranging from 30 to 65 °C. Thus, stability of the aqueous plating bath compositions of the present invention is maintained and corrosion of metal layers also present on the substrate during deposition of palladium from the composition is prevented.
  • the present invention further relates to a method for adjusting the deposition rate to a constant range over the life time of any electroless palladium deposition bath, the method comprises the steps of
  • the electroless palladium deposition bath may be any electroless palladium deposition bath, e.g. any aqueous electroless palladium deposition bath.
  • the electroless palladium deposition bath is the aqueous plating bath composition according to the present invention.
  • the electroless palladium deposition bath may be a freshly prepared electroless palladium deposition bath.
  • the electroless palladium deposition bath may be already used for some time for plating.
  • the electroless palladium deposition bath is a bath for electroless deposition of pure palladium.
  • the deposition rate or the concentration of the at least one aldehyde compound according to Formula (I) may be determined during plating or storage. If the deposition rate or the concentration of the at least one aldehyde compound according to Formula (I) are below a threshold value, the at least one aldehyde compound according to Formula (I) is replenished. Replenishment is performed by adding the at least one aldehyde compound according to Formula (I) to the electroless palladium deposition baths.
  • the at least one aldehyde compound according to Formula (I) may be added as a solid or a powder or may be dissolved in a solvent prior to its addition to the electroless palladium deposition baths.
  • suitable solvents are water; acids like sulphuric acid, hydrochloric acid, phosphoric acid; alkaline solutions like solutions of sodium hydroxide or potassium hydroxide; and organic solvents like propanol, ethanol, methanol.
  • the electroless palladium deposition bath may be already used for some time for plating and the deposition rate has dropped in relation to the initial deposition rate.
  • the present invention relates to a method for reactivating the aqueous electroless palladium deposition bath, the method comprises the steps of
  • the present invention further relates to uses of the aldehyde compounds according to Formula (I) for accelerating palladium deposition from any electroless palladium deposition bath, and/or adjusting the deposition rate to a constant range over the life time of any electroless palladium deposition bath, and/or reactivating an electroless palladium deposition bath already used for plating, wherein its deposition rate has dropped in relation to its initial deposition rate.
  • Test chips made of silicon covered with a SiO 2 layer and having four dies each were used as substrates.
  • Each die had several isolated pads of an aluminum-copper alloy on its surface. The pads had different sizes ranging from 10 ⁇ m to 1000 ⁇ m in diameter and distances between pads ranged from 20 ⁇ m to 1000 ⁇ m.
  • test chips were already pre-treated by double-zincation. Afterwards, the test chips were nickel plated using an electroless nickel plating bath (Xenolyte Ni MP, product of Atotech GmbH) containing a nickel(II) salt, a reducing agent for nickel ions, a complexing agent for nickel ions and a stabilizer.
  • the nickel plating bath had a pH value of 4.5 and was held at 87 °C during plating.
  • the test chips were immersed into the nickel plating bath for 10 minutes and a nickel layer of 3 ⁇ m thickness was plated onto the test chips. Afterwards, the test chips were rinsed in deionized water and subjected to a palladium plating bath.
  • a plating bath matrix (Xenolyte Pd LL, product of Atotech GmbH) having a pH-value of 5.5 and comprising water, palladium ions, sodium formate as reducing agent for palladium ions and ethylene diamine as complexing agent for palladium ions was used throughout all examples. Sodium formate of different manufacturing batches having different purities was used in the examples.
  • aldehyde compounds according to Formula (I) of the present invention were added to 2 l of individual palladium plating bath matrices throughout examples 1 to 4.
  • the aqueous plating bath compositions were held at 55 °C during plating.
  • the substrates were immersed into the aqueous plating bath compositions for 6 minutes. Afterwards, the substrates were rinsed with deionized water for 1 minute and dried with air pressure.
  • the thickness of the palladium layers deposited in various aqueous plating bath compositions tested was determined with an X-ray fluorescence method (XRF; Fischer, Fischerscope® X-Ray XDV®-11). The thickness was measured on four palladium pads for each substrate. The deposition rate for each aqueous plating bath composition was calculated by dividing the measured thickness of the palladium layers deposited by the plating time of 6 minutes. The mean values of deposition rates for each substrate are presented in Examples 1 to 4 below.
  • Example 1 was performed with plating bath matrices containing different batches of sodium formate, namely batch 2 having high purity and batch 3 having lower purity. 0 to 10 mg/l of formaldehyde were added to the plating bath matrices.
  • the aqueous plating bath compositions and plating results are summarised in Table 1 and shown in Figure 1 .
  • Table 1 Deposition rate of aqueous plating bath compositions containing formaldehyde Concentration of formaldehyde [mg/l] Deposition rate [nm/min] reducer of batch 2 reducer of batch 3 comparative 0 49 71 according to invention 1 51 72 10 68 81
  • Example 2 was performed with plating bath matrices containing different batches of sodium formate, namely batch 2 having high purity and batch 3 having lower purity. 0 to 10 mg/l of n-propanal were added to the plating bath matrices.
  • the aqueous plating bath compositions and plating results are summarised in Table 2 and shown in Figure 2 .
  • Table 2 Deposition rate of aqueous plating bath compositions containing n-propanal Concentration of n-propanal [mg/l] Deposition rate [nm/min] reducer of batch 2 reducer of batch 3 comparative 0 48 69 according to invention 1 53 71 10 65 79
  • n-pentanal 0 to 1.25 mg/l of n-pentanal were added to the plating bath matrix.
  • the plating bath matrix contained sodium formate of manufacturing batch 1 having highest purity.
  • the aqueous plating bath compositions and plating results are summarised in Table 3 and shown in Figure 3 .
  • Table 3 Deposition rate of aqueous plating bath compositions containing n-pentanal Concentration of n-pentanal [mg/l] Deposition rate [nm/min] reducer of batch 1 comparative 0 35.1 according to invention 0.25 38.6 1.25 43.2
  • n-pentanal 0 to 10 mg/l of n-pentanal were added to the plating bath matrix.
  • the plating bath matrix contained sodium formate of manufacturing batch 2 having high purity.
  • the aqueous plating bath compositions and plating results are summarised in Table 4 and shown in Figure 4 .
  • Table 4 Deposition rate of aqueous plating bath compositions containing n-pentanal Concentration of n-pentanal [mg/l] Deposition rate [nm/min] reducer of batch 2 comparative 0 44 according to invention 1 50 5 53 10 58
  • Examples 1 to 4 showed that the deposition rate of aqueous plating bath compositions containing aldehyde compounds according to Formula (I) were higher compared to compositions lacking the aldehyde compounds. The deposition rate increased with increasing concentration of the aldehyde compounds.
  • the deposition rates for compositions having no aldehyde compounds contained therein differ from each other due to the different batches of sodium formate used therein.
  • the deposits obtained from aqueous plating bath compositions with or without aldehyde compounds according to Formula (I) had a purity of between 98 to 99.99 wt.-%, were ductile, had a grey to white colour and adhered very well to the substrates.
  • n-pentanal 0 to 50 mg/l of n-pentanal were added to the plating bath matrix.
  • the plating bath matrix contained sodium formate of manufacturing batch 2 having high purity.
  • the aqueous plating bath compositions and plating results are summarised in Table 5.
  • Table 5 Deposition rate of aqueous plating bath compositions containing n-pentanal Concentration of n-pentanal [mg/l] Deposition rate [nm/min] reducer of batch 2 comparative 0 43 according to invention 5 52 10 58 50 42
  • n-hexanal 0 to 1.25 mg/l of n-hexanal were added to the plating bath matrix.
  • the plating bath matrix contained sodium formate of manufacturing batch 1 having highest purity.
  • the aqueous plating bath compositions and plating results are summarised in Table 6.
  • Table 6 Deposition rate of aqueous plating bath compositions containing n-pentanal Concentration of n-pentanal [mg/l] Deposition rate [nm/min] reducer of batch 1 comparative 0 36.1 according to invention 0.25 37.9 1.25 41.4

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Claims (12)

  1. Eine wässrige Abscheidungsbadzusammensetzung zum stromlosen Abscheiden von Palladium, umfassend
    (i) mindestens eine Quelle für Palladiumionen,
    (ii) mindestens ein Reduktionsmittel für Palladiumionen, wobei das mindestens eine Reduktionsmittel ausgewählt ist aus der Gruppe bestehend aus Hydrazin, Ameisensäure, Derivaten davon und Salzen davon, wobei die Ameisensäurederivate aus Estern von Ameisensäure ausgewählt sind; und
    (iii) mindestens eine Aldehydverbindung gemäß Formel (I)
    Figure imgb0004
    wobei R ausgewählt ist aus der Gruppe bestehend aus -H; unsubstituierten oder substituierten, linearen Alkylgruppen umfassend 1 bis 10 Kohlenstoffatome; und unsubstituierten oder substituierten, verzweigten Alkylgruppen umfassend 3 bis 10 Kohlenstoffatome und substituierten oder unsubstituierten Arylgruppen; und
    wobei die mindestens eine Aldehydverbindung gemäß Formel (I) eine Konzentration im Bereich von 0,01 bis 25 mg/l aufweist.
  2. Die wässrige Abscheidungsbadzusammensetzung nach Anspruch 1, wobei die unsubstituierten oder substituierten, linearen Alkylgruppen ausgewählt sind aus der Gruppe umfassend n-Pentylgruppe, n-Butylgruppe, n-Propylgruppe, Ethylgruppe und Methylgruppe.
  3. Die wässrige Abscheidungsbadzusammensetzung nach Anspruch 1, wobei die unsubstituierten oder substituierten, verzweigten Alkylgruppen ausgewählt sind aus der Gruppe umfassend 2-Pentylgruppe, 3-Pentylgruppe, 2-Methylbutylgruppe, 3-Methylbutylgruppe, 3-Methylbut-2-ylgruppe, 2-Methylbut-2-ylgruppe, 2,2-Dimethylpropylgruppe, Isobutylgruppe, sec-Butylgruppe, tert-Butylgruppe und Isopropylgruppe.
  4. Die wässrige Abscheidungsbadzusammensetzung nach Anspruch 1, wobei die unsubstituierten oder substituierten Arylgruppen ausgewählt sind aus unsubstituierten oder substituierten Phenylgruppen und unsubstituierten oder substituierten Naphthylgruppen.
  5. Die wässrige Abscheidungsbadzusammensetzung nach einem der vorhergehenden Ansprüche, wobei die linearen Alkylgruppen, die verzweigten Alkylgruppen bzw. die Arylgruppen substituiert sind und die Substituenten unabhängig voneinander ausgewählt sind aus der Gruppe umfassend Amino-, Carboxyl-, Ester-, Mercapto-, Hydroxyl-, Methoxy-, Ethoxy-, Methyl-, Ethyl-, Halogen-, Allyl-, Vinyl- und Arylgruppen.
  6. Die wässrige Abscheidungsbadzusammensetzung nach einem der vorhergehenden Ansprüche, wobei die mindestens eine Aldehydverbindung gemäß Formel (I) ausgewählt ist aus Hexanal, Pentanal, Butanal, Propanal, Ethanal, Methanal, Phenylmethanal und 2-Phenylacetaldehyd.
  7. Die wässrige Abscheidungsbadzusammensetzung nach einem der vorhergehenden Ansprüche, wobei die mindestens eine Quelle für Palladiumionen ausgewählt ist aus der Gruppe umfassend Palladiumchlorid, Palladiumacetat, Palladiumsulfat, Palladiumperchlorat, Dichloro-ethan-1,2-diaminpalladium, Diacetatoethan-1,2-diaminpalladium, Dichloro-N1-methylethan-1,2-diaminpalladium, Diacetato-N1-methylethan-1,2-diamin, Dichloro-N1,N2-dimethylethan-1,2-diamin, Diacetato-N1,N2-dimethylethan-1,2-diamin, Dichloro-N1-ethylethan-1,2-diamin, Diacetato-N1-ethylethan-1,2-diamin, Dichloro-N1,N2-diethylethan-1,2-diamin und Diacetato-N1,N2-diethylethan-1,2-diamin.
  8. Die wässrige Abscheidungsbadzusammensetzung nach einem der vorhergehenden Ansprüche, ferner umfassend mindestens einen Komplexbildner für Palladiumionen ausgewählt aus der Gruppe bestehend aus primären Aminen, sekundären Aminen und tertiären Aminen.
  9. Die wässrige Abscheidungsbadzusammensetzung nach einem der vorhergehenden Ansprüche, wobei die Konzentration des mindestens einen Reduktionsmittels im Bereich von 10 bis 1000 mmol/l liegt.
  10. Ein Verfahren zur stromlosen Palladiumabscheidung, das folgende Schritte umfasst:
    (a) Bereitstellen eines Substrats,
    (b) Kontaktieren des Substrats mit der wässrigen Abscheidungsbadzusammensetzung nach einem der Ansprüche 1 bis 9 und dadurch Abscheiden einer Palladiumschicht auf mindestens einen Teil des Substrats.
  11. Das Verfahren zur stromlosen Palladiumabscheidung nach Anspruch 10, wobei das Substrat in Schritt (b) bei einer Temperatur von 30 bis 65 °C mit der wässrigen Abscheidungsbadzusammensetzung in Kontakt gebracht wird.
  12. Ein Verfahren zum Reaktivieren eines wässrigen Bads zur stromlosen Abscheidung von Palladium, wobei das Verfahren folgende Schritte umfasst:
    e) Bereitstellen eines bereits verwendeten wässrigen Bads zur stromlosen Abscheidung von Palladium, umfassend (i) mindestens eine Quelle für Palladiumionen, (ii) mindestens ein Reduktionsmittel für Palladiumionen, wobei das mindestens eine Reduktionsmittel ausgewählt ist aus der Gruppe bestehend aus Hydrazin, Ameisensäure, Derivaten davon und Salzen davon, wobei die Ameisensäurederivate aus Estern von Ameisensäure ausgewählt sind; wobei seine Abscheidungsrate in Bezug auf seine anfängliche Abscheidungsrate abgefallen ist, und
    f) Zugeben mindestens einer Aldehydverbindung gemäß Formel (I) wie in Anspruch 1 definiert und dadurch Erhöhen seiner Abscheidungsrate, und wobei die mindestens eine Aldehydverbindung gemäß Formel (I) in dem Bad eine Konzentration im Bereich von 0,01 bis 25 mg/l aufweist.
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