EP3181938B1 - Herstellungsverfahren einer spiralfeder mit einer vorbestimmten steifigkeit durch wegnahme von material - Google Patents

Herstellungsverfahren einer spiralfeder mit einer vorbestimmten steifigkeit durch wegnahme von material Download PDF

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EP3181938B1
EP3181938B1 EP15201330.6A EP15201330A EP3181938B1 EP 3181938 B1 EP3181938 B1 EP 3181938B1 EP 15201330 A EP15201330 A EP 15201330A EP 3181938 B1 EP3181938 B1 EP 3181938B1
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European Patent Office
Prior art keywords
balance spring
fabrication method
predetermined
stiffness
balance
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English (en)
French (fr)
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EP3181938A1 (de
Inventor
Philipp Niedermann
Olivier Dubochet
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Centre Suisse dElectronique et Microtechnique SA CSEM
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Centre Suisse dElectronique et Microtechnique SA CSEM
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Application filed by Centre Suisse dElectronique et Microtechnique SA CSEM filed Critical Centre Suisse dElectronique et Microtechnique SA CSEM
Priority to EP15201330.6A priority Critical patent/EP3181938B1/de
Priority to US15/354,317 priority patent/US10324417B2/en
Priority to JP2016234770A priority patent/JP6343651B2/ja
Priority to CN201611164448.2A priority patent/CN106896708B/zh
Priority to CN201910652696.9A priority patent/CN110376871A/zh
Publication of EP3181938A1 publication Critical patent/EP3181938A1/de
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    • G—PHYSICS
    • G04—HOROLOGY
    • G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
    • G04B17/00—Mechanisms for stabilising frequency
    • G04B17/04—Oscillators acting by spring tension
    • G04B17/06—Oscillators with hairsprings, e.g. balance
    • G04B17/066—Manufacture of the spiral spring
    • G—PHYSICS
    • G04—HOROLOGY
    • G04D—APPARATUS OR TOOLS SPECIALLY DESIGNED FOR MAKING OR MAINTAINING CLOCKS OR WATCHES
    • G04D3/00—Watchmakers' or watch-repairers' machines or tools for working materials
    • G04D3/0069—Watchmakers' or watch-repairers' machines or tools for working materials for working with non-mechanical means, e.g. chemical, electrochemical, metallising, vapourising; with electron beams, laser beams
    • G—PHYSICS
    • G04—HOROLOGY
    • G04D—APPARATUS OR TOOLS SPECIALLY DESIGNED FOR MAKING OR MAINTAINING CLOCKS OR WATCHES
    • G04D3/00—Watchmakers' or watch-repairers' machines or tools for working materials
    • G04D3/0074—Watchmakers' or watch-repairers' machines or tools for working materials for treatment of the material, e.g. surface treatment
    • G—PHYSICS
    • G04—HOROLOGY
    • G04D—APPARATUS OR TOOLS SPECIALLY DESIGNED FOR MAKING OR MAINTAINING CLOCKS OR WATCHES
    • G04D7/00—Measuring, counting, calibrating, testing or regulating apparatus
    • G04D7/10—Measuring, counting, calibrating, testing or regulating apparatus for hairsprings of balances

Definitions

  • the invention relates to a method of manufacturing a hairspring of predetermined stiffness and, more precisely, such a hairspring used as a compensating hairspring cooperating with a predetermined inertia beam to form a resonator having a predetermined frequency.
  • the step of etching several spirals in a silicon wafer offers a non-negligible geometrical dispersion between the spirals of the same wafer and a greater dispersion between spirals of two wafers etched at different times.
  • the stiffness of each spiral engraved with the same engraving pattern is variable by creating significant manufacturing dispersions.
  • EP 1 213 628 A shows a method of adjusting the oscillation frequency of a regulator assembly in which a spiral is manufactured with an elastic torque greater than a reference elastic torque corresponding to a reference frequency for the oscillation of said regulator assembly; a balance is assembled to said spiral to form said regulator assembly, and machining said spiral by means of a laser beam to reduce its elastic torque until said oscillation frequency is substantially equal to said frequency of reference.
  • the object of the present invention is to overcome all or part of the disadvantages mentioned above by proposing a manufacturing process a spiral whose dimensions are precise enough not to require retouching.
  • the invention relates to a method of manufacturing a hairspring of a predetermined stiffness according to claim 1.
  • the invention relates to a resonator 1 of the balance 3-spiral type 5.
  • the balance 3 and the spiral 5 are preferably mounted on the same axis 7.
  • the thermal dependence also includes a possible contribution of the maintenance system such as, for example, a Swiss lever escapement (not shown) cooperating with the ankle 9 of the plate 11 also mounted on the axis 7.
  • a Swiss lever escapement (not shown) cooperating with the ankle 9 of the plate 11 also mounted on the axis 7.
  • the invention relates more particularly to a resonator 1 in which the hairspring 5 is used to compensate the whole of the resonator 1, that is to say all the parts and in particular the balance 3.
  • a hairspring 5 is generally called a hairspring compensator. Therefore, the invention relates to a manufacturing method for ensuring a very high dimensional accuracy of the spiral and, incidentally, to ensure a more precise stiffness of said spiral.
  • the compensating spiral 5, 15 is formed based on a material, optionally coated with a thermal compensation layer, and intended to cooperate with a predetermined balance beam 3 of inertia.
  • a material optionally coated with a thermal compensation layer, and intended to cooperate with a predetermined balance beam 3 of inertia.
  • a material for example based on silicon, glass or ceramic, for the manufacture of a hairspring 5, 15 offers the advantage of being precise by the existing methods of engraving and to have good mechanical and chemical properties being in particular very little sensitive to the magnetic fields. It must however be coated or superficially modified to form a compensating hairspring.
  • the silicon-based material used as a compensating spiral may be monocrystalline silicon whatever its crystalline orientation, doped monocrystalline silicon whatever its crystalline orientation, amorphous silicon, porous silicon, polycrystalline silicon, nitride of silicon, silicon carbide, quartz regardless of its crystalline orientation or silicon oxide.
  • monocrystalline silicon whatever its crystalline orientation
  • doped monocrystalline silicon whatever its crystalline orientation
  • amorphous silicon porous silicon
  • polycrystalline silicon polycrystalline silicon
  • nitride of silicon silicon carbide
  • quartz regardless of its crystalline orientation or silicon oxide.
  • other materials can be envisioned as a glass, a ceramic, a cermet, a metal or a metal alloy.
  • the explanation below will be focused on a silicon-based material.
  • Each type of material may be surface-modified or layer-coated to thermally compensate for the base material as explained above.
  • etching spirals in a silicon-based wafer, by means of a deep reactive ion etching (also known as "DRIE"), is the most accurate, phenomena that occur during etching or between two successive engravings can nevertheless induce geometric variations.
  • DRIE deep reactive ion etching
  • FIB localized ion etching
  • galvanic growth growth by chemical vapor deposition or chemical engraving, which are less accurate and for which the process would make even more sense.
  • the invention relates to a method 31 for manufacturing a spiral 5c.
  • the method 31 comprises, as illustrated in FIG. figure 8 a first step 33 intended to form at least one spiral 5a, for example based on silicon, with dimensions Da greater than dimensions Db necessary to obtain said hairspring 5c of a predetermined stiffness C.
  • the spiral section 5a has a height H 1 and a thickness E 1 .
  • the dimensions Da of the hairspring 5a are substantially between 1% and 20% higher than those Db of the hairspring 5c necessary to obtain said hairspring 5c of a predetermined stiffness C.
  • step 33 is carried out using a deep reactive ion etching in a wafer 23 of a silicon-based material as illustrated in FIG. figure 7 .
  • the opposite faces F 1 , F 2 are corrugated because a deep reactive ion etching of the Bosch type causes a slot etching structured by the successive stages of attack and passivation.
  • step 33 can not be limited to a particular step 33.
  • step 33 could equally well be obtained by chemical etching in a wafer 23 of a material for example based on silicon.
  • step 33 means that one or more spirals are formed, i.e., step 33 makes it possible to form bulk spirals or alternately formed in a wafer of a material.
  • step 33 several spirals 5a may be formed in the same plate 23 in dimensions Da, H 1 , E 1 greater than the dimensions Db, H 3 , E 3 necessary to obtain several spirals 5c of a predetermined stiffness C or several spirals 5c of several predetermined stiffnesses C.
  • Step 33 is not limited to the formation of a hairspring 5a in dimensions Da, H 1 , E 1 greater than the dimensions Db, H 3 , E 3 required to obtain a hairspring 5c of predetermined stiffness C , formed using a single material.
  • step 33 could equally well form a hairspring 5a with dimensions Da, H 1 , E 1 greater than the dimensions Db, H 3 , E 3 needed to obtain a hairspring 5c of stiffness C predetermined in a composite material, that is to say comprising several different materials.
  • the method 31 includes a second step 35 for determining the stiffness of the hairspring 5a.
  • a step 35 may be carried out directly on the hairspring 5a still attached to the wafer 23 or on the hairspring 5a previously detached from the wafer 23, on the whole or on a sample of the spirals still attached to a wafer 23 or on a sample spirals previously detached from a wafer 23.
  • the step 35 includes a first phase intended to measure the frequency f of an assembly comprising the hairspring 5a coupled with a balance having a predetermined inertia I. then, using the relation (5), deduce, in a second phase, the stiffness C spiral 5a.
  • Such a measurement phase can in particular be dynamic and carried out according to the teachings of the document EP 2 423 764 .
  • a static method, carried out according to the teachings of the document EP 2 423 764 can also be used to determine the stiffness C of the spiral 5a.
  • step 35 may also consist of a determination of the average stiffness of a representative sample or of all spirals formed on the same plate.
  • the method 31 comprises a step 37 intended to calculate, using the relation (2), the thickness of the material to be removed on the assembly of the hairspring to obtain the overall dimensions Db necessary to obtain said hairspring 5c of a predetermined stiffness C , that is to say the volume of material to be withdrawn homogeneously or not on the surface of the hairspring 5a.
  • step 39 for removing the surplus material of the hairspring 5a to the dimensions Db necessary to obtain said hairspring 5c of a predetermined stiffness C. It is therefore understood that it does not matter that the geometric variations have occurred on the thickness and / or the height and / or the length of the hairspring 5a insofar as, according to equation (2), it is the product h ⁇ E 3 which determines the rigidity of the turn.
  • a uniform thickness over the entire outer surface may be removed, a non-uniform thickness over the entire outer surface may be removed, a uniform thickness only on a portion of the outer surface may be removed or a non-uniform thickness only on a portion the outer surface can be removed.
  • step 37 could consist in removing material only according to the thickness E 1 or the height H 1 of the spiral 5 a.
  • step 39 comprises a first phase d1 intended to oxidize the hairspring 5a in order to transform said thickness of silicon-based material to be removed into silicon dioxide and thus form a spiral 5b oxidized.
  • a phase d1 can, for example, be obtained by thermal oxidation.
  • thermal oxidation can, for example, be carried out between 800 and 1200 ° C under an oxidizing atmosphere using water vapor or oxygen gas to form silicon oxide on the spiral 5a.
  • the section of the spiral 5b has a height H 2 and a thickness E 2 .
  • the hairspring 5b is formed of a central part 22 based on silicon according to the overall dimensions Db required for the hairspring 5c at said predetermined stiffness C and a peripheral portion 24 made of silicon dioxide.
  • the crenellated form is always reproduced on a portion of the peripheral portion 24 but is no longer or less present the central portion 22.
  • Step 39 ends, as shown in figure 5 , with a second phase d2 intended to remove the oxide of the spiral 5b allowing to obtain a hairspring 5c with the silicon-based single portion 22 with the overall dimensions Db necessary to obtain said predetermined stiffness C , the section comprising in particular a height H 3 and a thickness E 3 .
  • a phase d2 may, for example, be obtained by chemical etching.
  • Such a chemical bath may comprise, for example, a hydrofluoric acid for removing the silicon oxide spiral 5b.
  • step 39 comprises a single d3 phase for chemically etching the spiral 5a to obtain the spiral 5c silicon based the dimensions Db, H 3, E 3 necessary for said predetermined stiffness C.
  • other variants such as laser etching or localized ion etching, for removing the excess material from the hairspring 5a to the dimensions Db necessary to obtain said hairspring 5c of a predetermined stiffness C , can to be considered.
  • Step 39 may finish process 31. However, after step 39, method 31 may also perform, at least one more time, steps 35, 37 and 39 in order to further refine the dimensional quality of the hairspring .
  • steps 35, 37 and 39 may, for example, be of particular interest when the execution of the first iteration of steps 35, 37 and 39 is performed on the set, or on a sample, of the spirals still attached to a wafer 23, then in a second iteration, on the assembly, or a sample, spirals previously detached from the wafer 23 having undergone the first iteration.
  • the method 31 may also continue with all or part of the process 40 illustrated in FIG. figure 8 comprising optional steps 41, 43 and 45.
  • the method 31 can thus continue with the step 41 intended to form, on at least a part of the hairspring 5c, a portion 28 for forming a hairspring 5 , 15 less sensitive to thermal variations.
  • step 41 may consist of a phase e1 intended to deposit a layer on a portion of the outer surface of said hairspring 5c of a predetermined stiffness C.
  • the e1 phase may consist of oxidizing the spiral 5c to coat it with silicon dioxide to form a spiral which is thermocompensated.
  • a phase e1 can, for example, be obtained by thermal oxidation.
  • thermal oxidation can, for example, be carried out between 800 and 1200 ° C under an oxidizing atmosphere using water vapor or oxygen gas to form silicon oxide on the spiral 5c.
  • the balance spring 5, 15 as shown in FIG. figure 6 which, advantageously according to the invention, comprises a core 26 based on silicon and a coating 28 based on silicon oxide.
  • the balance spring 5, 15 compensator thus has a very high dimensional accuracy especially as to the height H 4 and the thickness E 4 , and, incidentally, a thermal compensation of the entire resonator 1 very thin .
  • the overall dimensions Db can be found using the teachings of the document EP 1 422 436 to apply it to the resonator 1 which is intended to be manufactured, that is to say to compensate for all the constituent parts of the resonator 1 as explained above.
  • step 41 may consist of a phase e2 intended to modify the structure to a predetermined depth of a portion of the outer surface of said hairspring 5c of a predetermined stiffness C.
  • a phase e2 intended to modify the structure to a predetermined depth of a portion of the outer surface of said hairspring 5c of a predetermined stiffness C.
  • an amorphous silicon it can be expected to crystallize it to a predetermined depth.
  • step 41 may consist of a phase e3 intended to modify the composition to a predetermined depth of a portion of the outer surface of said spring 5c of a stiffness C predetermined.
  • a phase e3 intended to modify the composition to a predetermined depth of a portion of the outer surface of said spring 5c of a stiffness C predetermined.
  • a monocrystalline or polycrystalline silicon it may be provided to dope or to diffuse interstitial or substitutional atoms to a predetermined depth.
  • the method 31 can also comprise step 45 intended to assemble a compensating hairspring 5, 15 obtained during step 41, or a hairspring 5c obtained during step 39, with a predetermined inertia beam obtained during of step 43 to form a resonator 1 of the balance-balance type which is thermally compensated or not, that is to say whose frequency f is sensitive or not to temperature variations.
  • the balance even if it comprises a predefined construction inertia, may comprise movable weights to provide a setting parameter before or after the sale of the timepiece.
  • step 39 and step 41 could be provided in order to deposit a functional or aesthetic layer, such as, for example, a curing layer or a luminescent layer.
  • a functional or aesthetic layer such as, for example, a curing layer or a luminescent layer.
  • step 35 is not systematically implemented.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
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  • Micromachines (AREA)

Claims (18)

  1. Verfahren (31) zum Herstellen einer Spiralfeder (5c) mit einer vorbestimmten Steifigkeit (C), umfassend die folgenden Schritte:
    a) Formen (33) einer Spiralfeder (5a) mit Abmessungen (Da, H1, E1) größer als die Abmessungen (Db, H3, E3), die erforderlich sind, um die Spiralfeder (5c) mit einer vorbestimmten Steifigkeit (C) zu erhalten;
    b) Bestimmen (35) der Steifigkeit (C) der im Schritt a) geformten Spiralfeder (5a), durch Messen der Frequenz (f) der Spiralfeder (5a), die mit einer mit einer vorbestimmten Trägheit versehenen Unruh gekoppelt ist;
    c) Berechnen (37) der abzutragenden Materialdicke ausgehend von der Bestimmung der Steifigkeit (C) der Spiralfeder (5a), die im Schritt b) bestimmt wird, um die Abmessungen (Db, H3, E3) zu erhalten, die erforderlich sind, um die Spiralfeder (5c) mit einer vorbestimmten Steifigkeit (C) zu erhalten;
    d) Abtragen (39) der Materialdicke, die den Erhalt der Spiralfeder (5c) mit den Abmessungen (Db, H3, E3), die für die vorbestimmte Steifigkeit (C) erforderlich sind, ermöglicht, von der im Schritt a) geformten Spiralfeder (5a).
  2. Herstellungsverfahren (31) nach dem vorhergehenden Anspruch, dadurch gekennzeichnet, dass im Schritt a) die Abmessungen (Da, H1, E1) der im Schritt a) geformten Spiralfeder (5a) 1 % bis 20 % größer sind als jene (Db, H3, E3), die erforderlich sind, um die Spiralfeder (5c) mit der vorbestimmten Steifigkeit (C) zu erhalten.
  3. Herstellungsverfahren (31) nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass der Schritt a) mittels einer reaktiven tiefgründigen Ionenätzung ausgeführt wird.
  4. Herstellungsverfahren (31) nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass der Schritt a) mittels einer chemischen Ätzung ausgeführt wird.
  5. Herstellungsverfahren (31) nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass im Schritt a) mehrere Spiralfedern (5a) aus derselben Platte (23) mit den Abmessungen (Da, H1, E1) geformt werden, die größer als die Abmessungen (Db, H3, E3) sind, die erforderlich sind, um mehrere Spiralfedern (5c) mit einer vorbestimmten Steifigkeit (C) oder mehrere Spiralfedern (5c) mit mehreren vorbestimmten Steifigkeiten (C) zu erhalten.
  6. Herstellungsverfahren (31) nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die im Schritt a) geformte Spiralfeder (5a) auf Siliciumbasis hergestellt ist.
  7. Herstellungsverfahren (31) nach einem der Ansprüche 1 bis 5, dadurch gekennzeichnet, dass die im Schritt a) geformte Spiralfeder (5a) auf Glasbasis hergestellt ist.
  8. Herstellungsverfahren (31) nach einem der Ansprüche 1 bis 5, dadurch gekennzeichnet, dass die im Schritt a) geformte Spiralfeder (5a) auf Keramikbasis hergestellt ist.
  9. Herstellungsverfahren (31) nach einem der Ansprüche 1 bis 5, dadurch gekennzeichnet, dass die im Schritt a) geformte Spiralfeder (5a) auf Metallbasis hergestellt ist.
  10. Herstellungsverfahren (31) nach einem der Ansprüche 1 bis 5, dadurch gekennzeichnet, dass die im Schritt a) geformte Spiralfeder (5a) auf Basis einer Metalllegierung hergestellt ist.
  11. Herstellungsverfahren (31) nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass der Schritt b) die folgenden Phasen umfasst:
    b1) Messen der Frequenz (f) einer Anordnung, umfassend die im Schritt a) geformte Spiralfeder (5a), die mit einer mit einer vorbestimmten Trägheit versehenen Unruh gekoppelt ist;
    b2) Herleiten der Steifigkeit (C) der im Schritt a) geformten Spiralfeder (5a) aus der gemessenen Frequenz (f).
  12. Herstellungsverfahren (31) nach Anspruch 6, dadurch gekennzeichnet, dass der Schritt d) die folgenden Phasen umfasst:
    d1) Oxidieren der im Schritt a) geformten Spiralfeder (5a), um die Materialdicke auf Siliciumbasis, die abzutragen ist, in Siliciumdioxid umzuwandeln und somit eine oxidierte Spiralfeder (5b) zu formen;
    d2) Abtragen des Oxids von der oxidierten Spiralfeder (5b), um die Spiralfeder (5c) mit den für die vorbestimmte Steifigkeit (C) erforderlichen Abmessungen (Db, H3, E3) zu erhalten.
  13. Herstellungsverfahren (31) nach einem der Ansprüche 1 bis 11, dadurch gekennzeichnet, dass der Schritt d) die folgende Phase umfasst:
    d3) chemisches Ätzen der im Schritt a) gebildeten Spiralfeder (5a), um die Spiralfeder (5c) mit den für die vorbestimmte Steifigkeit (C) erforderlichen Abmessungen (Db, H3, E3) zu erhalten.
  14. Herstellungsverfahren (31) nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass nach dem Schritt d) in dem Verfahren wenigstens einmal erneut die Schritte b), c) und d) ausgeführt werden, um die Maßqualität zu verfeinern.
  15. Herstellungsverfahren (31) nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass nach dem Schritt d) das Verfahren ferner den folgenden Schritt umfasst:
    e) Bilden eines Abschnitts zur Korrektur der Steifigkeit der Spiralfeder (5c) und um eine Spiralfeder (5, 15) zu formen, die gegenüber Temperaturschwankungen weniger empfindlich ist, mindestens auf einem Teil der Spiralfeder (5c) mit einer vorbestimmten Steifigkeit (C).
  16. Herstellungsverfahren (31) nach Anspruch 15, dadurch gekennzeichnet, dass der Schritt e) die folgende Phase umfasst:
    e1) Abscheiden einer Schicht auf einem Teil der äußeren Oberfläche der Spiralfeder (5c) mit einer vorbestimmten Steifigkeit (C).
  17. Herstellungsverfahren (31) nach Anspruch 15, dadurch gekennzeichnet, dass der Schritt e) die folgende Phase umfasst:
    e2) Verändern der Struktur mit einer vorbestimmten Tiefe eines Teils der äußeren Oberfläche der Spiralfeder (5c) mit einer vorbestimmten Steifigkeit (C).
  18. Herstellungsverfahren (31) nach Anspruch 15, dadurch gekennzeichnet, dass der Schritt e) die folgende Phase umfasst:
    e3) Verändern der Zusammensetzung mit einer vorbestimmten Tiefe eines Teils der äußeren Oberfläche der Spiralfeder (5c) mit einer vorbestimmten Steifigkeit (C).
EP15201330.6A 2015-12-18 2015-12-18 Herstellungsverfahren einer spiralfeder mit einer vorbestimmten steifigkeit durch wegnahme von material Active EP3181938B1 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EP15201330.6A EP3181938B1 (de) 2015-12-18 2015-12-18 Herstellungsverfahren einer spiralfeder mit einer vorbestimmten steifigkeit durch wegnahme von material
US15/354,317 US10324417B2 (en) 2015-12-18 2016-11-17 Method for fabrication of a balance spring of a predetermined stiffness by removal of material
JP2016234770A JP6343651B2 (ja) 2015-12-18 2016-12-02 材料を除去することによって所定の剛性をもつひげぜんまいを製作する方法
CN201611164448.2A CN106896708B (zh) 2015-12-18 2016-12-16 用于通过去除材料制造预定刚度的游丝的方法
CN201910652696.9A CN110376871A (zh) 2015-12-18 2016-12-16 用于通过去除材料制造预定刚度的游丝的方法

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EP15201330.6A EP3181938B1 (de) 2015-12-18 2015-12-18 Herstellungsverfahren einer spiralfeder mit einer vorbestimmten steifigkeit durch wegnahme von material

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EP3181938A1 EP3181938A1 (de) 2017-06-21
EP3181938B1 true EP3181938B1 (de) 2019-02-20

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TWI796444B (zh) 2018-03-20 2023-03-21 瑞士商百達翡麗日內瓦股份有限公司 用於製造精確剛度之時計熱補償游絲的方法
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EP3654111B1 (de) * 2018-11-15 2022-02-16 Nivarox-FAR S.A. Verfahren zur messung des drehmoments einer spiralfeder einer uhr
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CH716603A1 (fr) 2019-09-16 2021-03-31 Sigatec Sa Procédé de fabrication de spiraux horlogers.
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EP3056948A1 (de) 2015-02-17 2016-08-17 Master Dynamic Limited Siliciumspiralfeder
EP3106929A1 (de) 2015-06-16 2016-12-21 Nivarox-FAR S.A. Werkstück mit verbesserter schweissoberfläche
CH709628A2 (fr) 2015-08-27 2015-10-30 Suisse Electronique Microtech Ressort spiral thermocompensé pour mouvement d'horlogerie.

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Cited By (1)

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Publication number Priority date Publication date Assignee Title
EP3543795A1 (de) 2018-03-20 2019-09-25 Patek Philippe SA Genève Herstellungsverfahren von uhrkomponenten aus silizium

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US10324417B2 (en) 2019-06-18
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CN106896708B (zh) 2019-10-15
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