EP3144413B1 - Composition de bain de placage pour un dépôt autocatalytique d'or - Google Patents
Composition de bain de placage pour un dépôt autocatalytique d'or Download PDFInfo
- Publication number
- EP3144413B1 EP3144413B1 EP15186095.4A EP15186095A EP3144413B1 EP 3144413 B1 EP3144413 B1 EP 3144413B1 EP 15186095 A EP15186095 A EP 15186095A EP 3144413 B1 EP3144413 B1 EP 3144413B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- gold
- plating bath
- plating
- alloys
- gold plating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000007747 plating Methods 0.000 title claims description 214
- 239000010931 gold Substances 0.000 title claims description 180
- 229910052737 gold Inorganic materials 0.000 title claims description 179
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 title claims description 150
- 238000007772 electroless plating Methods 0.000 title description 8
- 239000000203 mixture Substances 0.000 title description 4
- 150000001875 compounds Chemical class 0.000 claims description 64
- -1 gold ions Chemical class 0.000 claims description 42
- 239000003623 enhancer Substances 0.000 claims description 39
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 31
- 125000000217 alkyl group Chemical group 0.000 claims description 23
- 239000003638 chemical reducing agent Substances 0.000 claims description 23
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 21
- 229910052763 palladium Inorganic materials 0.000 claims description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 229910045601 alloy Inorganic materials 0.000 claims description 14
- 239000000956 alloy Substances 0.000 claims description 14
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 14
- 125000004432 carbon atom Chemical group C* 0.000 claims description 12
- 150000003839 salts Chemical class 0.000 claims description 12
- 239000008139 complexing agent Substances 0.000 claims description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 9
- 229910000521 B alloy Inorganic materials 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical class NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 7
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims description 7
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 5
- KXDHJXZQYSOELW-UHFFFAOYSA-N Carbamic acid Chemical class NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 claims description 4
- LFGFZXXKZPSRMB-UHFFFAOYSA-N [B].[Mo].[Co] Chemical compound [B].[Mo].[Co] LFGFZXXKZPSRMB-UHFFFAOYSA-N 0.000 claims description 4
- CPJYFACXEHYLFS-UHFFFAOYSA-N [B].[W].[Co] Chemical compound [B].[W].[Co] CPJYFACXEHYLFS-UHFFFAOYSA-N 0.000 claims description 4
- 125000001931 aliphatic group Chemical group 0.000 claims description 4
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical class OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 4
- 150000001299 aldehydes Chemical class 0.000 claims description 3
- PTMHPRAIXMAOOB-UHFFFAOYSA-N phosphoramidic acid Chemical class NP(O)(O)=O PTMHPRAIXMAOOB-UHFFFAOYSA-N 0.000 claims description 3
- 229910001020 Au alloy Inorganic materials 0.000 claims description 2
- 229910000531 Co alloy Inorganic materials 0.000 claims description 2
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 2
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 2
- 229910001252 Pd alloy Inorganic materials 0.000 claims description 2
- 125000003172 aldehyde group Chemical group 0.000 claims description 2
- 150000003934 aromatic aldehydes Chemical class 0.000 claims description 2
- QDWJUBJKEHXSMT-UHFFFAOYSA-N boranylidynenickel Chemical compound [Ni]#B QDWJUBJKEHXSMT-UHFFFAOYSA-N 0.000 claims description 2
- 150000001735 carboxylic acids Chemical class 0.000 claims description 2
- WHDPTDWLEKQKKX-UHFFFAOYSA-N cobalt molybdenum Chemical compound [Co].[Co].[Mo] WHDPTDWLEKQKKX-UHFFFAOYSA-N 0.000 claims description 2
- JPNWDVUTVSTKMV-UHFFFAOYSA-N cobalt tungsten Chemical compound [Co].[W] JPNWDVUTVSTKMV-UHFFFAOYSA-N 0.000 claims description 2
- 239000003353 gold alloy Substances 0.000 claims description 2
- 239000002243 precursor Substances 0.000 claims description 2
- 235000000346 sugar Nutrition 0.000 claims description 2
- 150000008163 sugars Chemical class 0.000 claims description 2
- HHLFWLYXYJOTON-UHFFFAOYSA-N glyoxylic acid Chemical compound OC(=O)C=O HHLFWLYXYJOTON-UHFFFAOYSA-N 0.000 description 21
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 15
- 230000008569 process Effects 0.000 description 11
- 239000000243 solution Substances 0.000 description 10
- 239000002253 acid Substances 0.000 description 8
- MFIGJRRHGZYPDD-UHFFFAOYSA-N n,n'-di(propan-2-yl)ethane-1,2-diamine Chemical compound CC(C)NCCNC(C)C MFIGJRRHGZYPDD-UHFFFAOYSA-N 0.000 description 8
- 239000003381 stabilizer Substances 0.000 description 8
- 238000007654 immersion Methods 0.000 description 7
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 5
- 230000004913 activation Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910021645 metal ion Inorganic materials 0.000 description 5
- VATUKUMHBXZSCD-UHFFFAOYSA-N n,n'-dipropylethane-1,2-diamine Chemical compound CCCNCCNCCC VATUKUMHBXZSCD-UHFFFAOYSA-N 0.000 description 5
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 4
- 244000248349 Citrus limon Species 0.000 description 4
- 235000005979 Citrus limon Nutrition 0.000 description 4
- CJKRXEBLWJVYJD-UHFFFAOYSA-N N,N'-diethylethylenediamine Chemical compound CCNCCNCC CJKRXEBLWJVYJD-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical class [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- ZTQSAGDEMFDKMZ-UHFFFAOYSA-N butyric aldehyde Natural products CCCC=O ZTQSAGDEMFDKMZ-UHFFFAOYSA-N 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- ZBKIUFWVEIBQRT-UHFFFAOYSA-N gold(1+) Chemical compound [Au+] ZBKIUFWVEIBQRT-UHFFFAOYSA-N 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 150000002825 nitriles Chemical class 0.000 description 3
- NNFCIKHAZHQZJG-UHFFFAOYSA-N potassium cyanide Chemical compound [K+].N#[C-] NNFCIKHAZHQZJG-UHFFFAOYSA-N 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052716 thallium Inorganic materials 0.000 description 3
- 0 *NCCN*=* Chemical compound *NCCN*=* 0.000 description 2
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 description 2
- IAVREABSGIHHMO-UHFFFAOYSA-N 3-hydroxybenzaldehyde Chemical compound OC1=CC=CC(C=O)=C1 IAVREABSGIHHMO-UHFFFAOYSA-N 0.000 description 2
- RGHHSNMVTDWUBI-UHFFFAOYSA-N 4-hydroxybenzaldehyde Chemical compound OC1=CC=C(C=O)C=C1 RGHHSNMVTDWUBI-UHFFFAOYSA-N 0.000 description 2
- IKHGUXGNUITLKF-UHFFFAOYSA-N Acetaldehyde Chemical compound CC=O IKHGUXGNUITLKF-UHFFFAOYSA-N 0.000 description 2
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- NBBJYMSMWIIQGU-UHFFFAOYSA-N Propionic aldehyde Chemical compound CCC=O NBBJYMSMWIIQGU-UHFFFAOYSA-N 0.000 description 2
- YDONNITUKPKTIG-UHFFFAOYSA-N [Nitrilotris(methylene)]trisphosphonic acid Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CP(O)(O)=O YDONNITUKPKTIG-UHFFFAOYSA-N 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 125000005263 alkylenediamine group Chemical group 0.000 description 2
- 150000001412 amines Chemical group 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- HUMNYLRZRPPJDN-UHFFFAOYSA-N benzaldehyde Chemical compound O=CC1=CC=CC=C1 HUMNYLRZRPPJDN-UHFFFAOYSA-N 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 2
- JXTHNDFMNIQAHM-UHFFFAOYSA-N dichloroacetic acid Chemical compound OC(=O)C(Cl)Cl JXTHNDFMNIQAHM-UHFFFAOYSA-N 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- WSDISUOETYTPRL-UHFFFAOYSA-N dmdm hydantoin Chemical compound CC1(C)N(CO)C(=O)N(CO)C1=O WSDISUOETYTPRL-UHFFFAOYSA-N 0.000 description 2
- 230000003203 everyday effect Effects 0.000 description 2
- LEQAOMBKQFMDFZ-UHFFFAOYSA-N glyoxal Chemical compound O=CC=O LEQAOMBKQFMDFZ-UHFFFAOYSA-N 0.000 description 2
- WJRBRSLFGCUECM-UHFFFAOYSA-N hydantoin Chemical compound O=C1CNC(=O)N1 WJRBRSLFGCUECM-UHFFFAOYSA-N 0.000 description 2
- 229940091173 hydantoin Drugs 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 239000002609 medium Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- XTFKWYDMKGAZKK-UHFFFAOYSA-N potassium;gold(1+);dicyanide Chemical compound [K+].[Au+].N#[C-].N#[C-] XTFKWYDMKGAZKK-UHFFFAOYSA-N 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 125000001302 tertiary amino group Chemical group 0.000 description 2
- CWERGRDVMFNCDR-UHFFFAOYSA-N thioglycolic acid Chemical compound OC(=O)CS CWERGRDVMFNCDR-UHFFFAOYSA-N 0.000 description 2
- NJRXVEJTAYWCQJ-UHFFFAOYSA-N thiomalic acid Chemical compound OC(=O)CC(S)C(O)=O NJRXVEJTAYWCQJ-UHFFFAOYSA-N 0.000 description 2
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 2
- MPDDTAJMJCESGV-CTUHWIOQSA-M (3r,5r)-7-[2-(4-fluorophenyl)-5-[methyl-[(1r)-1-phenylethyl]carbamoyl]-4-propan-2-ylpyrazol-3-yl]-3,5-dihydroxyheptanoate Chemical compound C1([C@@H](C)N(C)C(=O)C2=NN(C(CC[C@@H](O)C[C@@H](O)CC([O-])=O)=C2C(C)C)C=2C=CC(F)=CC=2)=CC=CC=C1 MPDDTAJMJCESGV-CTUHWIOQSA-M 0.000 description 1
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- YHMYGUUIMTVXNW-UHFFFAOYSA-N 1,3-dihydrobenzimidazole-2-thione Chemical compound C1=CC=C2NC(S)=NC2=C1 YHMYGUUIMTVXNW-UHFFFAOYSA-N 0.000 description 1
- OWEGMIWEEQEYGQ-UHFFFAOYSA-N 100676-05-9 Natural products OC1C(O)C(O)C(CO)OC1OCC1C(O)C(O)C(O)C(OC2C(OC(O)C(O)C2O)CO)O1 OWEGMIWEEQEYGQ-UHFFFAOYSA-N 0.000 description 1
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 description 1
- FTZILAQGHINQQR-UHFFFAOYSA-N 2-Methylpentanal Chemical compound CCCC(C)C=O FTZILAQGHINQQR-UHFFFAOYSA-N 0.000 description 1
- CMWKITSNTDAEDT-UHFFFAOYSA-N 2-nitrobenzaldehyde Chemical compound [O-][N+](=O)C1=CC=CC=C1C=O CMWKITSNTDAEDT-UHFFFAOYSA-N 0.000 description 1
- XBNHRNFODJOFRU-UHFFFAOYSA-N 3-(2-benzothiazolylthio)-1-propanesulfonic acid Chemical compound C1=CC=C2SC(SCCCS(=O)(=O)O)=NC2=C1 XBNHRNFODJOFRU-UHFFFAOYSA-N 0.000 description 1
- CPMDYTUUHTVWKQ-UHFFFAOYSA-N 3-methyl-1-n-propan-2-ylbutane-1,2-diamine Chemical compound CC(C)NCC(N)C(C)C CPMDYTUUHTVWKQ-UHFFFAOYSA-N 0.000 description 1
- YJWJGLQYQJGEEP-UHFFFAOYSA-N 3-methylpentanal Chemical compound CCC(C)CC=O YJWJGLQYQJGEEP-UHFFFAOYSA-N 0.000 description 1
- ZETIVVHRRQLWFW-UHFFFAOYSA-N 3-nitrobenzaldehyde Chemical compound [O-][N+](=O)C1=CC=CC(C=O)=C1 ZETIVVHRRQLWFW-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- JGEGJYXHCFUMJF-UHFFFAOYSA-N 4-methylpentanal Chemical compound CC(C)CCC=O JGEGJYXHCFUMJF-UHFFFAOYSA-N 0.000 description 1
- BXRFQSNOROATLV-UHFFFAOYSA-N 4-nitrobenzaldehyde Chemical compound [O-][N+](=O)C1=CC=C(C=O)C=C1 BXRFQSNOROATLV-UHFFFAOYSA-N 0.000 description 1
- YIROYDNZEPTFOL-UHFFFAOYSA-N 5,5-Dimethylhydantoin Chemical compound CC1(C)NC(=O)NC1=O YIROYDNZEPTFOL-UHFFFAOYSA-N 0.000 description 1
- GUBGYTABKSRVRQ-XLOQQCSPSA-N Alpha-Lactose Chemical compound O[C@@H]1[C@@H](O)[C@@H](O)[C@@H](CO)O[C@H]1O[C@@H]1[C@@H](CO)O[C@H](O)[C@H](O)[C@H]1O GUBGYTABKSRVRQ-XLOQQCSPSA-N 0.000 description 1
- IMNIMPAHZVJRPE-UHFFFAOYSA-N C(C1)N2CCN1CC2 Chemical compound C(C1)N2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 description 1
- VFDOLUJOTAHRHR-UHFFFAOYSA-N CC(C(CC)C)NCCNC(C(CC)C)C Chemical compound CC(C(CC)C)NCCNC(C(CC)C)C VFDOLUJOTAHRHR-UHFFFAOYSA-N 0.000 description 1
- SQTUUNFDJGCJFU-UHFFFAOYSA-N CC(CCC)(C)NCCNC(CCC)(C)C Chemical compound CC(CCC)(C)NCCNC(CCC)(C)C SQTUUNFDJGCJFU-UHFFFAOYSA-N 0.000 description 1
- RMLKIZAYERPFLJ-UHFFFAOYSA-N CC(CCNCCNCCC(CC)C)CC Chemical compound CC(CCNCCNCCC(CC)C)CC RMLKIZAYERPFLJ-UHFFFAOYSA-N 0.000 description 1
- RDXQSMIBRLYRCP-UHFFFAOYSA-N CC(CNCCNCC(C(C)C)C)C(C)C Chemical compound CC(CNCCNCC(C(C)C)C)C(C)C RDXQSMIBRLYRCP-UHFFFAOYSA-N 0.000 description 1
- AZGLUFSSCBTIBB-UHFFFAOYSA-N CC(CNCCNCC(CC)(C)C)(CC)C Chemical compound CC(CNCCNCC(CC)(C)C)(CC)C AZGLUFSSCBTIBB-UHFFFAOYSA-N 0.000 description 1
- NJISKLCROUXYPV-UHFFFAOYSA-N CC(CNCCNCC(CCC)C)CCC Chemical compound CC(CNCCNCC(CCC)C)CCC NJISKLCROUXYPV-UHFFFAOYSA-N 0.000 description 1
- IUNMPGNGSSIWFP-UHFFFAOYSA-N CN(C)CCCN Chemical compound CN(C)CCCN IUNMPGNGSSIWFP-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229940126062 Compound A Drugs 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 description 1
- WQZGKKKJIJFFOK-QTVWNMPRSA-N D-mannopyranose Chemical compound OC[C@H]1OC(O)[C@@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-QTVWNMPRSA-N 0.000 description 1
- HMFHBZSHGGEWLO-SOOFDHNKSA-N D-ribofuranose Chemical compound OC[C@H]1OC(O)[C@H](O)[C@@H]1O HMFHBZSHGGEWLO-SOOFDHNKSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- 229940120146 EDTMP Drugs 0.000 description 1
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 description 1
- 239000004471 Glycine Substances 0.000 description 1
- 229910003767 Gold(III) bromide Inorganic materials 0.000 description 1
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- XUJNEKJLAYXESH-REOHCLBHSA-N L-Cysteine Chemical compound SC[C@H](N)C(O)=O XUJNEKJLAYXESH-REOHCLBHSA-N 0.000 description 1
- FFEARJCKVFRZRR-BYPYZUCNSA-N L-methionine Chemical compound CSCC[C@H](N)C(O)=O FFEARJCKVFRZRR-BYPYZUCNSA-N 0.000 description 1
- GUBGYTABKSRVRQ-QKKXKWKRSA-N Lactose Natural products OC[C@H]1O[C@@H](O[C@H]2[C@H](O)[C@@H](O)C(O)O[C@@H]2CO)[C@H](O)[C@@H](O)[C@H]1O GUBGYTABKSRVRQ-QKKXKWKRSA-N 0.000 description 1
- GUBGYTABKSRVRQ-PICCSMPSSA-N Maltose Natural products O[C@@H]1[C@@H](O)[C@H](O)[C@@H](CO)O[C@@H]1O[C@@H]1[C@@H](CO)OC(O)[C@H](O)[C@H]1O GUBGYTABKSRVRQ-PICCSMPSSA-N 0.000 description 1
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 description 1
- 229930040373 Paraformaldehyde Natural products 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- PYMYPHUHKUWMLA-LMVFSUKVSA-N Ribose Natural products OC[C@@H](O)[C@@H](O)[C@@H](O)C=O PYMYPHUHKUWMLA-LMVFSUKVSA-N 0.000 description 1
- XQJYHXQESCJSHS-UHFFFAOYSA-H S(=O)([O-])OS(=O)[O-].[Au+3].[K+].[K+].[K+].S(=O)([O-])OS(=O)[O-].S(=O)([O-])OS(=O)[O-] Chemical compound S(=O)([O-])OS(=O)[O-].[Au+3].[K+].[K+].[K+].S(=O)([O-])OS(=O)[O-].S(=O)([O-])OS(=O)[O-] XQJYHXQESCJSHS-UHFFFAOYSA-H 0.000 description 1
- BPXUZVUPCXMVMG-UHFFFAOYSA-K S(=O)([O-])OS(=O)[O-].[Au+3].[NH4+].[NH4+].[NH4+].S(=O)([O-])OS(=O)[O-].S(=O)([O-])OS(=O)[O-] Chemical compound S(=O)([O-])OS(=O)[O-].[Au+3].[NH4+].[NH4+].[NH4+].S(=O)([O-])OS(=O)[O-].S(=O)([O-])OS(=O)[O-] BPXUZVUPCXMVMG-UHFFFAOYSA-K 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- HMFHBZSHGGEWLO-UHFFFAOYSA-N alpha-D-Furanose-Ribose Natural products OCC1OC(O)C(O)C1O HMFHBZSHGGEWLO-UHFFFAOYSA-N 0.000 description 1
- WQZGKKKJIJFFOK-PHYPRBDBSA-N alpha-D-galactose Chemical compound OC[C@H]1O[C@H](O)[C@H](O)[C@@H](O)[C@H]1O WQZGKKKJIJFFOK-PHYPRBDBSA-N 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 150000007854 aminals Chemical class 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 239000012736 aqueous medium Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- LJJNEPKMBSUEND-UHFFFAOYSA-O azanium;gold;cyanide Chemical compound [NH4+].[Au].N#[C-] LJJNEPKMBSUEND-UHFFFAOYSA-O 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- WQZGKKKJIJFFOK-VFUOTHLCSA-N beta-D-glucose Chemical compound OC[C@H]1O[C@@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-VFUOTHLCSA-N 0.000 description 1
- GUBGYTABKSRVRQ-QUYVBRFLSA-N beta-maltose Chemical compound OC[C@H]1O[C@H](O[C@H]2[C@H](O)[C@@H](O)[C@H](O)O[C@@H]2CO)[C@H](O)[C@@H](O)[C@@H]1O GUBGYTABKSRVRQ-QUYVBRFLSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- KXZJHVJKXJLBKO-UHFFFAOYSA-N chembl1408157 Chemical compound N=1C2=CC=CC=C2C(C(=O)O)=CC=1C1=CC=C(O)C=C1 KXZJHVJKXJLBKO-UHFFFAOYSA-N 0.000 description 1
- 235000015165 citric acid Nutrition 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- JNGZXGGOCLZBFB-IVCQMTBJSA-N compound E Chemical compound N([C@@H](C)C(=O)N[C@@H]1C(N(C)C2=CC=CC=C2C(C=2C=CC=CC=2)=N1)=O)C(=O)CC1=CC(F)=CC(F)=C1 JNGZXGGOCLZBFB-IVCQMTBJSA-N 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- MLUCVPSAIODCQM-NSCUHMNNSA-N crotonaldehyde Chemical compound C\C=C\C=O MLUCVPSAIODCQM-NSCUHMNNSA-N 0.000 description 1
- MLUCVPSAIODCQM-UHFFFAOYSA-N crotonaldehyde Natural products CC=CC=O MLUCVPSAIODCQM-UHFFFAOYSA-N 0.000 description 1
- IEJYHZREBFJJLJ-UHFFFAOYSA-N cyano thiocyanate;gold Chemical compound [Au].N#CSC#N IEJYHZREBFJJLJ-UHFFFAOYSA-N 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- XUJNEKJLAYXESH-UHFFFAOYSA-N cysteine Natural products SCC(N)C(O)=O XUJNEKJLAYXESH-UHFFFAOYSA-N 0.000 description 1
- 235000018417 cysteine Nutrition 0.000 description 1
- 230000002354 daily effect Effects 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 229960005215 dichloroacetic acid Drugs 0.000 description 1
- ADPOBOOHCUVXGO-UHFFFAOYSA-H dioxido-oxo-sulfanylidene-$l^{6}-sulfane;gold(3+) Chemical compound [Au+3].[Au+3].[O-]S([O-])(=O)=S.[O-]S([O-])(=O)=S.[O-]S([O-])(=O)=S ADPOBOOHCUVXGO-UHFFFAOYSA-H 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- WBZKQQHYRPRKNJ-UHFFFAOYSA-L disulfite Chemical compound [O-]S(=O)S([O-])(=O)=O WBZKQQHYRPRKNJ-UHFFFAOYSA-L 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- DUYCTCQXNHFCSJ-UHFFFAOYSA-N dtpmp Chemical compound OP(=O)(O)CN(CP(O)(O)=O)CCN(CP(O)(=O)O)CCN(CP(O)(O)=O)CP(O)(O)=O DUYCTCQXNHFCSJ-UHFFFAOYSA-N 0.000 description 1
- NFDRPXJGHKJRLJ-UHFFFAOYSA-N edtmp Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CCN(CP(O)(O)=O)CP(O)(O)=O NFDRPXJGHKJRLJ-UHFFFAOYSA-N 0.000 description 1
- 238000000454 electroless metal deposition Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 150000002081 enamines Chemical class 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- UYMKPFRHYYNDTL-UHFFFAOYSA-N ethenamine Chemical class NC=C UYMKPFRHYYNDTL-UHFFFAOYSA-N 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 229930182830 galactose Natural products 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000174 gluconic acid Substances 0.000 description 1
- 235000012208 gluconic acid Nutrition 0.000 description 1
- 239000008103 glucose Substances 0.000 description 1
- 229940015043 glyoxal Drugs 0.000 description 1
- 150000002344 gold compounds Chemical class 0.000 description 1
- FDWREHZXQUYJFJ-UHFFFAOYSA-M gold monochloride Chemical compound [Cl-].[Au+] FDWREHZXQUYJFJ-UHFFFAOYSA-M 0.000 description 1
- OVWPJGBVJCTEBJ-UHFFFAOYSA-K gold tribromide Chemical compound Br[Au](Br)Br OVWPJGBVJCTEBJ-UHFFFAOYSA-K 0.000 description 1
- IZLAVFWQHMDDGK-UHFFFAOYSA-N gold(1+);cyanide Chemical compound [Au+].N#[C-] IZLAVFWQHMDDGK-UHFFFAOYSA-N 0.000 description 1
- OIZJPMOIAMYNJL-UHFFFAOYSA-H gold(3+);trisulfate Chemical compound [Au+3].[Au+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O OIZJPMOIAMYNJL-UHFFFAOYSA-H 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 235000010299 hexamethylene tetramine Nutrition 0.000 description 1
- VKYKSIONXSXAKP-UHFFFAOYSA-N hexamethylenetetramine Chemical compound C1N(C2)CN3CN1CN2C3 VKYKSIONXSXAKP-UHFFFAOYSA-N 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 239000008101 lactose Substances 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- MBKDYNNUVRNNRF-UHFFFAOYSA-N medronic acid Chemical compound OP(O)(=O)CP(O)(O)=O MBKDYNNUVRNNRF-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- OKKJLVBELUTLKV-UHFFFAOYSA-N methanol Natural products OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 1
- 229930182817 methionine Natural products 0.000 description 1
- UDGSVBYJWHOHNN-UHFFFAOYSA-N n',n'-diethylethane-1,2-diamine Chemical compound CCN(CC)CCN UDGSVBYJWHOHNN-UHFFFAOYSA-N 0.000 description 1
- OUFNOWUREGICHL-UHFFFAOYSA-N n,n'-bis(2,2-dimethylpropyl)ethane-1,2-diamine Chemical compound CC(C)(C)CNCCNCC(C)(C)C OUFNOWUREGICHL-UHFFFAOYSA-N 0.000 description 1
- UYOJXUUSHHHEHC-UHFFFAOYSA-N n,n'-bis(2-methylbutan-2-yl)ethane-1,2-diamine Chemical compound CCC(C)(C)NCCNC(C)(C)CC UYOJXUUSHHHEHC-UHFFFAOYSA-N 0.000 description 1
- LTUMISDAHGVYGU-UHFFFAOYSA-N n,n'-bis(2-methylpropyl)ethane-1,2-diamine Chemical compound CC(C)CNCCNCC(C)C LTUMISDAHGVYGU-UHFFFAOYSA-N 0.000 description 1
- YKJAPPOPXVGVKL-UHFFFAOYSA-N n,n'-bis(3,3-dimethylbutyl)ethane-1,2-diamine Chemical compound CC(C)(C)CCNCCNCCC(C)(C)C YKJAPPOPXVGVKL-UHFFFAOYSA-N 0.000 description 1
- GHPRYRTUTIVKFX-UHFFFAOYSA-N n,n'-bis(3-methylbutyl)ethane-1,2-diamine Chemical compound CC(C)CCNCCNCCC(C)C GHPRYRTUTIVKFX-UHFFFAOYSA-N 0.000 description 1
- LCKHBYOSKOUPOT-UHFFFAOYSA-N n,n'-bis(4-methylpentan-2-yl)ethane-1,2-diamine Chemical compound CC(C)CC(C)NCCNC(C)CC(C)C LCKHBYOSKOUPOT-UHFFFAOYSA-N 0.000 description 1
- KGHSEGNHUKZUDP-UHFFFAOYSA-N n,n'-bis(4-methylpentyl)ethane-1,2-diamine Chemical compound CC(C)CCCNCCNCCCC(C)C KGHSEGNHUKZUDP-UHFFFAOYSA-N 0.000 description 1
- AYTDFDBZORIXSG-UHFFFAOYSA-N n,n'-di(hexan-2-yl)ethane-1,2-diamine Chemical compound CCCCC(C)NCCNC(C)CCCC AYTDFDBZORIXSG-UHFFFAOYSA-N 0.000 description 1
- MEDKKMLZDPVMCW-UHFFFAOYSA-N n,n'-di(pentan-2-yl)ethane-1,2-diamine Chemical compound CCCC(C)NCCNC(C)CCC MEDKKMLZDPVMCW-UHFFFAOYSA-N 0.000 description 1
- YRGVKPIUZUOJSJ-UHFFFAOYSA-N n,n'-dibutylethane-1,2-diamine Chemical compound CCCCNCCNCCCC YRGVKPIUZUOJSJ-UHFFFAOYSA-N 0.000 description 1
- VCUPOEDTGSOKCM-UHFFFAOYSA-N n,n'-dihexylethane-1,2-diamine Chemical compound CCCCCCNCCNCCCCCC VCUPOEDTGSOKCM-UHFFFAOYSA-N 0.000 description 1
- PHKIRJNNBPMGKY-UHFFFAOYSA-N n,n'-dipentylethane-1,2-diamine Chemical compound CCCCCNCCNCCCCC PHKIRJNNBPMGKY-UHFFFAOYSA-N 0.000 description 1
- KGHYGBGIWLNFAV-UHFFFAOYSA-N n,n'-ditert-butylethane-1,2-diamine Chemical compound CC(C)(C)NCCNC(C)(C)C KGHYGBGIWLNFAV-UHFFFAOYSA-N 0.000 description 1
- 229910001453 nickel ion Inorganic materials 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- QNGNSVIICDLXHT-UHFFFAOYSA-N para-ethylbenzaldehyde Natural products CCC1=CC=C(C=O)C=C1 QNGNSVIICDLXHT-UHFFFAOYSA-N 0.000 description 1
- 229920002866 paraformaldehyde Polymers 0.000 description 1
- DTUQWGWMVIHBKE-UHFFFAOYSA-N phenylacetaldehyde Chemical compound O=CCC1=CC=CC=C1 DTUQWGWMVIHBKE-UHFFFAOYSA-N 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- LVTJOONKWUXEFR-FZRMHRINSA-N protoneodioscin Natural products O(C[C@@H](CC[C@]1(O)[C@H](C)[C@@H]2[C@]3(C)[C@H]([C@H]4[C@@H]([C@]5(C)C(=CC4)C[C@@H](O[C@@H]4[C@H](O[C@H]6[C@@H](O)[C@@H](O)[C@@H](O)[C@H](C)O6)[C@@H](O)[C@H](O[C@H]6[C@@H](O)[C@@H](O)[C@@H](O)[C@H](C)O6)[C@H](CO)O4)CC5)CC3)C[C@@H]2O1)C)[C@H]1[C@H](O)[C@H](O)[C@H](O)[C@@H](CO)O1 LVTJOONKWUXEFR-FZRMHRINSA-N 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- SMQUZDBALVYZAC-UHFFFAOYSA-N salicylaldehyde Chemical compound OC1=CC=CC=C1C=O SMQUZDBALVYZAC-UHFFFAOYSA-N 0.000 description 1
- 150000003335 secondary amines Chemical group 0.000 description 1
- 125000000467 secondary amino group Chemical group [H]N([*:1])[*:2] 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 235000002639 sodium chloride Nutrition 0.000 description 1
- SDKPSXWGRWWLKR-UHFFFAOYSA-M sodium;9,10-dioxoanthracene-1-sulfonate Chemical compound [Na+].O=C1C2=CC=CC=C2C(=O)C2=C1C=CC=C2S(=O)(=O)[O-] SDKPSXWGRWWLKR-UHFFFAOYSA-M 0.000 description 1
- VMDSWYDTKFSTQH-UHFFFAOYSA-N sodium;gold(1+);dicyanide Chemical compound [Na+].[Au+].N#[C-].N#[C-] VMDSWYDTKFSTQH-UHFFFAOYSA-N 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000013112 stability test Methods 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-L sulfite Chemical compound [O-]S([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-L 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 150000003512 tertiary amines Chemical group 0.000 description 1
- AAGLRRWDTGMXSD-UHFFFAOYSA-H trisodium gold(3+) sulfinato sulfite Chemical compound S(=O)([O-])OS(=O)[O-].[Na+].[Na+].[Na+].[Au+3].S(=O)([O-])OS(=O)[O-].S(=O)([O-])OS(=O)[O-] AAGLRRWDTGMXSD-UHFFFAOYSA-H 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
- DGVVWUTYPXICAM-UHFFFAOYSA-N β‐Mercaptoethanol Chemical compound OCCS DGVVWUTYPXICAM-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/42—Coating with noble metals
- C23C18/44—Coating with noble metals using reducing agents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1635—Composition of the substrate
- C23C18/1637—Composition of the substrate metallic substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
- C23C18/1824—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
- C23C18/1837—Multistep pretreatment
- C23C18/1844—Multistep pretreatment with use of organic or inorganic compounds other than metals, first
Definitions
- the present invention relates to electroless aqueous gold plating bath compositions for electroless plating of gold layers onto a substrate.
- the plating bath is particularly suitable in the manufacture of printed circuit boards, IC substrates, semiconducting devices, interposers made of glass and the like.
- Gold layers are of paramount interest in the manufacturing of electronic components and in the semiconductor industry. Gold layers are frequently used as solderable and/or wire bondable surfaces in the manufacture of printed circuit boards, IC substrates, semiconducting devices and the like. Typically, they are used as a final finish before soldering and wire bonding. In order to provide electrical connections of sufficient conductivity and robustness between the copper lines and wires that are bonded thereto while providing a good strength for wire bonding, there are various layer assemblies which are used conventionally in the art. Among others, there are electroless nickel electroless gold (ENIG), electroless nickel electroless palladium immersion gold (ENEPIG), direct immersion gold (DIG), electroless palladium immersion gold (EPIG) and electroless palladium autocatalytic gold (EPAG).
- ENIG electroless nickel electroless gold
- ENEPIG electroless nickel electroless palladium immersion gold
- DIG direct immersion gold
- EPIG electroless palladium immersion gold
- EPAG electroless palladium autocatalytic gold
- Electroless plating generally describes methods without using external current sources for reduction of metal ions.
- Plating processes using external current sources are commonly described as electrolytic or galvanic plating methods.
- Non-metallic surfaces may be pretreated to make them receptive or catalytic for metal deposition. All or selected portions of a surface may suitably be pretreated.
- the main components of electroless metal baths are the metal salt, a reducing agent, and, as optional ingredients, a complexing agent, a pH adjuster, and additives, as for example stabilising agents.
- Complexing agents are used to chelate the metal being deposited and prevent the metal from being precipitated from solution (i.e. as the hydroxide and the like). Chelating metal renders the metal available to the reducing agent that converts the metal ions to metallic form.
- a further form of metal deposition is immersion plating.
- Immersion plating is another deposition of metal using neither external current sources nor chemical reducing agents.
- the mechanism relies on the substitution of metals from an underlying substrate for metal ions present in the immersion plating solution. This is a distinct disadvantage of immersion plating because deposition of thicker layers is normally limited by the layer porosity.
- electroless gold plating baths use one or both types of electroless plating. Even if reducing agents have been added to the plating bath, immersion-type plating may occur albeit in a significantly reduced proportion.
- electroless plating is to be understood (mainly) as autocatalytic deposition with the aid of a chemical reducing agent (referred to as "reducing agent" herein).
- US 2012/0129005 A1 discloses an electroless gold plating bath comprising a water-soluble gold compound and an alkylene diamine, dialkylene triamines or the like.
- gold plating solution lack sufficient stability and plating rate and are thus not applicable in industrial processes (see example 4).
- US 2008/0138507 A1 reports electroless gold plating baths which use aldehyde compounds as reducing agents and N-substituted ethylene diamine derivatives such as N 1 , N 2 -dimethylethylenediamine and N 1 , N 2 -bis-(methylol)ethylenediamine. But again, the plating baths described therein lack plating rate and stability (see example 4). It is typically sufficient that gold plating bath have plating rates of 150 nm/h or more, preferably of 200 nm/h or more or ideally, of 250 nm/h or more to comply with today's industrial requirements.
- the electroless aqueous gold plating bath according to the invention which comprises at least one source of gold ions and at least one reducing agent for gold ions, and is characterized in that it comprises at least one ethylenediamine derivative according to formula (I) wherein the residues R 1 and R 2 comprise 2 to 12 carbon atoms and are selected from the group consisting of branched alkyl, unbranched alkyl, cycloalkyl or combinations thereof wherein the individual residues R 1 and R 2 are the same or different as plating enhancer compound.
- formula (I) wherein the residues R 1 and R 2 comprise 2 to 12 carbon atoms and are selected from the group consisting of branched alkyl, unbranched alkyl, cycloalkyl or combinations thereof wherein the individual residues R 1 and R 2 are the same or different as plating enhancer compound.
- Figure 1 shows a test substrate having a multitude of copper pads to be plated upon. Also depicted are the 10 different spots where the layer thickness is measured (circles labelled 1 to 10).
- the ethylenediamine derivative according to formula (I) will be referred to herein as plating enhancer compound.
- the plating enhancer compound according to formula (I) bears the residues R 1 and R 2 which comprise 2 to 12 carbon atoms and are selected from the group consisting of branched alkyl, unbranched alkyl, cycloalkyl or combinations thereof wherein the individual residues R 1 and R 2 are the same or different.
- the amine moieties in the plating enhancer compound of formula (I) are secondary amine moieties. It was found by the inventors that the respective diamine or a derivative thereof with methyl residues for R 1 and R 2 do neither allow for sufficient plating rates nor for sufficiently stable gold plating baths (see example 4).
- the residues R 1 and R 2 of the plating enhancer compound of formula (I) comprise 2 to 8 carbon atoms, more preferred 2 to 6 carbon atoms, even more preferred 2 to 4 carbon atoms.
- residues R 1 and R 2 in formula (I) are the same.
- the alkyl residues R 1 and R 2 in formula (I) are free of terminal hydroxy moieties (-OH) as the inventors have found that terminal hydroxy moieties bound thereto are detrimental to stability of the plating bath (see example 4).
- the residues R 1 and R 2 in formula (I) are free of terminal primary amino moieties as the inventors have found that said terminal amino moieties bound thereto are also detrimental to stability of the plating bath (see example 4).
- residues R 1 and R 2 are free of any further amino moieties and/or any hydroxy moieties. It is even more preferable that the alkyl residues are free of substituents and consist of carbon and hydrogen atoms only.
- the plating enhancer compound from the following group consisting of N' , N 2 -diethylethane-1,2-diamine, N 1 ,N 2 -dipropylethane-1,2-diamine, N 1 , N 2 -di- iso -propylethane-1,2-diamine, N 1 , N 2 -dibutylethane-1,2-diamine, N 1 , N 2 -di- iso -butylethane-1,2-diamine, N 1 ,N 2 - di -tert- butylethane-1,2-diamine, N 1 , N 2 -dipentylethane-1,2-diamine, N 1 , N 2 -di- iso -pentyl-ethane-1,2-diamine, N 1 , N 2 -di- sec -pentylethane-1,2-diamine, N 1 ,N 2 - di -tert
- R 1 and R 2 are branched alkyl residues having 3 to 6 carbon atoms. It was surprisingly found that high plating rate in conjunction with even more improved bath stability are obtained when using branched alkyl residues having 3 to 6 carbon atoms for R 1 and R 2 (see example 5).
- the concentration of the at least one plating enhancer compound according to formula (I) in the electroless aqueous gold plating bath according to the invention preferably ranges from 0.001 - 1 mol/L, more preferably from 10 to 100 mmol/L, even more preferably from 25 to 75 mmol/L. If more than one plating enhancer compound is contained in the electroless aqueous gold plating bath according to the invention the concentration is based on the total amount of substance of all plating enhancer compounds.
- the electroless aqueous gold plating bath according to the invention is an aqueous solution.
- aqueous solution means that the prevailing liquid medium, which is the solvent in the solution, is water. Further liquids, that are miscible with water, as for example alcohols and other polar organic liquids, that are miscible with water, may be added.
- the electroless plating bath according to the invention may be prepared by dissolving all components in aqueous liquid medium, preferably in water.
- the electroless aqueous gold plating bath according to the invention comprises at least one source of gold ions.
- Gold ions can be in either Au + , Au 3+ or both oxidation states.
- the source of gold ions can be any water soluble gold salt having said oxidation states.
- the source of gold ions is selected from the group consisting of gold cyanide, gold ammonium cyanide, gold (I) alkali cyanides including gold (I) potassium cyanide, gold (I) sodium cyanide, trisodium gold disulphite, tripotassium gold disulphite and triammonium gold disulphite, gold thiosulphate, gold thiocyanide, gold sulphate, gold chloride, and gold bromide.
- the source of gold ions is a gold (I) alkali cyanide and may be added to the aqueous plating bath in the form of a solution containing this salt.
- concentration of gold ions in the electroless aqueous gold plating bath according to the invention preferably ranges from 0.1 to 10 g/L, more preferably from 0.3 to 6 g/L.
- the electroless aqueous gold plating bath further comprises at least one reducing agent for gold ions.
- the reducing agents for gold ions is preferably selected from the group consisting of aliphatic aldehydes such as formaldehyde, acetoaldehyde, propionaldehyde, n-butylaldehyde, ⁇ -methylvaleraldehyde, ⁇ -methylvaleraldehyde, ⁇ -methylvaleraldehyde or the like; aliphatic dialdehydes such as glyoxal, succindialdehdye or the like; aliphatic unsaturated aldehydes such as croton aldehyde or the like; aromatic aldehydes such as benzaldehyde, o-nitrobenzaldehyde, m-nitrobenzaldehyde, p-nitrobenzaldehyde, o-tolaldehyde, m-tolaldehy
- source of glyoxylic acid encompasses glyoxylic acid and all compounds that can be converted to glyoxylic acid in aqueous solution.
- aqueous solution the aldehyde containing acid is in equilibrium with its hydrate.
- a suitable source of glyoxylic acid is dihaloacetic acid, such as dichloroacetic acid, which will hydrolyse in an aqueous medium to the hydrate of glyoxylic acid.
- An alternative source of glyoxylic acid is the bisulphite adduct as is a hydrolysable ester or other acid derivative. The bisulphite adduct may be added to the electroless aqueous gold plating bath according to the invention or formed in situ.
- the bisulphite adduct may be made from glyoxylate and either bisulphite, sulphite or metabisulphite.
- Formaldehyde, sources of glyoxylic acid and glyoxylic acid are preferred, most preferred is formaldehyde.
- the concentration of the at least one reducing agent for gold ions preferably ranges 0.0001 to 0.5 mol/L, more preferably 0.001 to 0.3 mol/L, even more preferably 0.005 to 0.12 mol/L.
- reaction products of certain ethyleneamine derivatives such as triethylenetetraamine and reducing agents for gold ions such as formaldehyde (or its oxidised product formic acid) can be formed causing precipitation and reduced plating rates as a consequence.
- Typical reaction products are for example the respective aminal, enamine and amide derivatives. Therefore, it is preferable to limit the extent of reaction product formation by choosing a molar ratio of plating enhancer compound according to formula (I) to reducing agent for gold ions in the electroless aqueous gold plating bath according to the invention to range from 0.5 to 9, preferably from 0.8 to 3.0, more preferably from 1.0 to 2.0 (see Example 6).
- this ratio is calculated based on the total mass of substance of all respective individual compounds.
- the electroless aqueous gold plating bath according to the invention optionally further comprises at least one complexing agent.
- the optional at least one complexing agent present in the electroless aqueous gold plating bath according to the invention is preferably selected from the group consisting of carboxylic acids, hydroxycarboxylic acids, aminocarboxylic acids, aminophosphonic acids or a salt of the aforementioned.
- the optional at least one complexing agent serves as a complexing agent for gold ions as well as for metal ions dissolved from the substrate during plating, e.g., nickel ions or copper ions.
- a preferred carboxylic acid is for example oxalic acid or a salt thereof.
- Preferred hydroxycarboxylic acids are for example tartaric acid, citric acid, lactic acid, malic acid, gluconic acid and salts of the aforementioned.
- Preferred aminocarboxylic acids are for example glycine, cysteine, methionine and salts of the aforementioned.
- Preferred aminophosphonic acids are nitrilotri(methylphosphonic acid) (commonly abbreviated as ATMP), diethylenetriamine-pentakis(methylphosphonic acid) (commonly abbreviated as DTPMP) and ethylenediaminetetra(methylenphosphonic acid) (commonly abbreviated as EDTMP).
- ATMP nitrilotri(methylphosphonic acid)
- DTPMP diethylenetriamine-pentakis(methylphosphonic acid)
- EDTMP ethylenediaminetetra(methylenphosphonic acid)
- the concentration of the optional at least one complexing agent preferably ranges from 0.1 to 50 g/L
- the electroless aqueous gold plating bath according to the invention comprises two different complexing agents and/or salts thereof, such as a hydroxycarboxylic acid or a salt thereof and an aminocarboxylic acid or a salt thereof.
- the electroless aqueous gold plating bath according to the invention optionally comprises a crystal adjuster which is selected from the group consisting of thallium ions, arsenic ions, selenium ions and lead ions.
- crystal adjuster is preferably added to the electroless aqueous gold plating bath according to the invention in a concentration range of 0.00001 to 0.1 g/L.
- Useful sources for said ions can be water-soluble salts thereof such as the respective nitrates, sulphates and halides.
- the electroless aqueous gold plating bath according to the invention optionally comprises at least one stabilising agent selected from the group consisting of sources of cyanide ions, hydantoin and alkyl derivatives thereof such as alkylhydantoin and dialkylhydantoin wherein alkyl residues in this context comprise C 1 to C 8 alkyls, preferably methyl, which can be cyclic and/or alicyclic, branched or unbranched, sulphur compounds such as 2-mercaptobenzothiazole, 2-mercaptobenzoimidazole, mercaptoacetic acid, 3-(2-benzthiazolylthio)-1-propanesulphonic acid, mercaptosuccinic acid, thiosulphuric acid, thioglycol, thiourea, thiomalic acid and the like, and aromatic nitrogen compounds such as benzotriazole, 1,2,4-aminotriazole and the like.
- Suitable source of cyanide ions
- the concentration of the optional stabilising agent can be selected dependant on its chemical structure and can be determined in routine experiments by anyone known in the art.
- the concentration of the optional stabilising agent preferably ranges 0.0000001 to 0.2 mol/L, it ranges more preferably from 0.000001 to 0.1 mol/L.
- Such stabilising agents are conventionally added to electroless gold plating baths to improve their lifetime and to prevent plate-out.
- two or more stabilising agents are used. More preferably, a source of cyanide ions in a concentration of 0.0003 to 5 mmol/L and one or more of hydantoin and alkyl derivatives thereof in a concentration of 10 to 100 mmol/L and/or sulphur compounds in a concentration of 0.000001 to 0.05 mol/L is selected.
- the electroless aqueous gold plating bath according to the invention is free of intentionally added second sources of reducible metal ions (disregarding trace of impurities commonly present in technical raw materials) allowing for pure gold deposits to be formed.
- Pure gold deposits are soft, malleable, and particularly suitable for wire bonding and soldering. Traces of impurities are understood as compounds present in a technical raw material of 1 wt.-% or less.
- the pH of the electroless aqueous gold plating bath according to the invention preferably ranges from 5 to 9, more preferably from 6 to 8, even more preferably from 6.5 to 7.5.
- the target pH value is adjusted using for example acids such as phosphoric acid or bases such as sodium hydroxide or potassium hydroxide. It is advantageous and thus preferable to continuously control and adjust the pH value during plating as this also improves the plating bath lifetime.
- aqueous gold plating baths to adjust the plating rate and improve their stability.
- aqueous gold plating baths can be electroless gold plating baths including immersion-type gold plating baths, autocatalytic gold plating baths and gold plating baths using a mixture of autocatalytic and immersion-type plating and electrolytic plating baths.
- the plating enhancer compound is used in electroless plating baths.
- the method for depositing a gold layer onto a substrate comprising, in this order, the steps
- the substrate to be plated with gold is contacted with the electroless aqueous gold plating bath according to the invention. This contact is preferably accomplished by dipping the substrate into the plating bath or by spraying the plating bath onto the substrate.
- the substrate preferably has a surface area consisting of a metal or metal alloy and gold is then deposited onto the surface area consisting of a metal or metal alloy, selected from the group consisting of nickel, nickel alloys such as nickel phosphorous alloys, nickel boron alloys, cobalt, cobalt alloys such as cobalt phosphorous alloys, cobalt molybdenum phosphorous alloys, cobalt molybdenum boron alloys, cobalt molybdenum boron phosphorous alloys, cobalt tungsten phosphorous alloys, cobalt tungsten boron alloys, cobalt tungsten boron phosphorous alloys, palladium, palladium alloys such as palladium phosphorous alloys, palladium boron alloys, copper and copper alloys and gold or gold alloys.
- the electroless aqueous gold plating bath according to the invention can be used to deposit gold layers on gold substrates and may be utilised to thicken existing gold layers obtained for example
- the substrates can be pretreated prior to plating as it is known in the art.
- Such pretreatment includes cleaning steps with solvents and/or surfactants to remove mostly organic contaminants, etching steps with acids and optionally, oxidising or reducing agents to remove oxides and activation steps.
- the latter are to deposit a noble metal on the surface or a part thereof to make it more receptive for plating.
- noble metal can be palladium which can be deposited as a salt before it is reduced to elementary palladium on the surface. Or it can be deposited in a colloidal form and - where appropriate - be subjected to an acceleration step with an acid such as hydrochloric acid to remove any protective colloids such as tin colloids.
- Such an activation layer normally is not a discrete layer but an aggregation of island structures of palladium. However, activation layers are considered as metal substrates in the context of the present invention.
- the temperature of the electroless aqueous gold plating bath according to the invention is preferably in the range of 30 to 95 °C, more preferably from 70 to 90 °C, even more preferably from 75 to 85 °C, yet even more preferably from 77 to 84 °C during plating.
- the plating time is preferably in the range of 1 to 60 min, more preferably in the range of 5 to 30 min. However, if thinner or thicker deposits are desired, the plating time can be outside above-described ranges and adjusted accordingly.
- components which are being used during plating.
- Such components are inter alia the source of gold ions, the reducing agent for gold ions, the at least one stabilising agent and the plating enhancer compound. If necessary the pH value can be adjusted continuously or in intervals as well.
- the electroless aqueous gold plating bath according to the invention may be used with horizontal, vertical and spray plating equipment.
- the aqueous gold plating baths according to the invention allows for sufficient plating rates (deposited thickness of the plated metal layer over time) of 250 nm/h or more (see examples 1 to 3 and 5). Most plating baths known in the art which are somewhat stable do not allow for sufficient plating rates.
- the aqueous gold plating baths according to the invention form homogeneous gold deposits with little layer thickness diversion.
- the standard deviation of the gold layer thickness is below 10% or even below 8%. This little deviation is advantageously achievable even when plating on various substrates having different sizes.
- Pallabond® CLN, Pallabond®ME, PallaBond® Pre Dip, PallaBond® Aktivator and PallaBond® ACT V3 STD are products available from Atotech GmbH.
- the source of gold ions was in all cases K[Au(CN) 2 ].
- Printed circuit test boards having a multitude of copper pads of different sizes ranging from 0.25 to 49 mm 2 on both sides were used in all experiments as substrates. They were cleaned and etched prior to activation with palladium. Then, palladium was deposited on the copper surfaces before the gold layer was plated thereon. The different pads where the layer thickness was determined are shown in figure 1 .
- the individual pads had the following areas 1: 0.25 mm 2 , 2: 0.52 mm 2 , 3: 0.68 mm 2 , 4: 0.97 mm 2 , 5: 1.33 mm 2 , 6: 1.35 mm 2 , 7: 3.3 mm 2 , 8: 6.7 mm 2 , 9: 25 mm 2 , 10: 49 mm 2 .
- the deposit thickness was measured at 10 copper pads on each side of the test boards.
- the chosen copper pads had different sizes and are used to determine the layer thickness by XRF using the XRF instrument Fischerscope XDV-SDD (Helmut Fischer GmbH, Germany).
- XRF instrument Fischerscope XDV-SDD Helmut Fischer GmbH, Germany.
- the plating rate was calculated by dividing the obtained layer thickness by the time necessary to obtain said layer thickness.
- the layer thickness homogeneity was determined as the standard deviation from the average thickness value.
- Example 1 N 1 , N 2 -di- iso -propylethane-1,2-diamine as plating enhancer compound
- a gold plating baths containing the following components was prepared by dissolution of all components in water: potassium hydroxide to adjust pH to range from 7.9 to 8.1 plating enhancer compound 50 mmol/L complexing agent 89 mmol/L 5,5-dimethylhydantoin 47 mmol/L thallium ions 0.01 mmol/L potassium cyanide 0.6 mmol/L Formaldehyde 34.5 mmol/L gold ions 5.1 mmol/L
- the gold layers were of lemon yellow colour. Also, the plating rate was very high and well above the desired minimum of 250 nm/h. The layer thickness distribution was very homogeneous, too, with only 5.6% deviation.
- Example 2 N 1 , N 2 -dipropylethane-1,2-diamine as plating enhancer compound
- Example 3 The process as described in Example 1 was repeated wherein the gold plating bath contained 50 mmol/L N 1 ,N 2 -dipropylethane-1,2-diamine instead of 50 mmol/L N 1 ,N 2 -di- iso -propylethane-1,2-diamine.
- Table 3 Layer thickness and plating rate for a gold plating bath containing N 1 ,N 2 -dipropylethane-1,2-diamine.
- Layer thickness Standard deviation Plating rate Palladium layer 82 nm 492 nm/h Gold layer 101 nm 6.6% 303 nm/h
- the gold layers were of lemon yellow colour. Also, the plating rate was very high and above the desired minimum of 250 nm/h. The layer thickness distribution was very homogeneous, too, with only 6.6% deviation.
- Example 3 N 1 ,N 2 -diethylethane-1,2-diamine as plating enhancer compound
- Example 4 The process as described in Example 1 was repeated wherein the gold plating bath contained N 1 ,N 2 -diethylethane-1,2-diamine instead of N 1 ,N 2 - di -iso- propylethane-1,2-diamine but in the same concentration.
- Table 4 Layer thickness and plating rate for a gold plating bath containing N 1 ,N 2 -diethylethane-1,2-diamine.
- Layer thickness Standard deviation Plating rate Palladium layer 86 nm 516 nm/h Gold layer 108 nm 6.4% 348 nm/h
- the gold layers were of lemon yellow colour. Also, the plating rate was very high and clearly above the desired minimum of 250 nm/h. The layer thickness distribution was very homogeneous, too, with only 6.4% deviation.
- Example 5 The process as described in Example 1 was repeated wherein the gold plating bath contained other compounds as listed in Table 5 instead of N 1 ,N 2 - di -iso- propylethane-1,2-diamine.
- Table 5 Layer thickness and plating rate for comparative compounds in gold plating baths.
- Compound Concentration Layer thickness [nm] Plating rate [nm/h] Complete plate-out A. 5.61 g/L 6 18 - B. 5.11 g/L 10 30 - C. 5.86 g/L 20 60 - D. 5.26 g/L 28 84 - E. 3.00 g/L 7 21 - F. 4.40 g/L 50 150 ⁇ 3d G. 7.40 g/L 200 600 ⁇ 1d H. 7.30 g/L 140 420 3h
- Compound A comprised only tertiary amine moieties and did not bear any alkyl residues R 1 and R 2 . Hardly any gold plating took place when using this compound as substitute for a plating enhancer compound in a gold plating bath. The gold layers were also very inhomogeneous and the standard deviation of the layer thickness was 58%.
- Compound B was an alkylene diamine derivative comprising only primary and tertiary amino moieties (with only methyl residues).
- the gold plating was very slow when using this compound as substitute for a plating enhancer compound in a gold plating bath.
- the gold layers were also very inhomogeneous and the standard deviation of the layer thickness was 53%.
- Compounds C and D are alkanolamine with a tertiary amino moiety only or with only one secondary amino moieties.
- the gold plating was slow when using these compounds as substitutes for a plating enhancer compound in a gold plating bath.
- the gold layers were also very inhomogeneous and the standard deviation of the layer thickness was 24% for compound C and 33% for compound D.
- Compounds E and F did not contain any alkyl residues of sufficient length and when using these compounds as substitutes for a plating enhancer compound in a gold plating bath the plating was slow.
- Compounds E and F are of similar structure as the plating enhancer compound according to formula (I) but they either have no alkyl residues at all or the alkyl residues are short.
- the gold layer thicknesses were inhomogeneous having a standard deviation of 14.4% while for compound F the deviation was 6.4%.
- Compound G bore two terminal hydroxy moieties.
- the plating rate was high but the stability of the gold plating bath was insufficient. Within less than 1 day the gold plating baths was irrevocably degraded and could not be used for gold plating anymore. The standard deviation of the gold layer thickness was 6.3%.
- Compound H bore two terminal primary amino moieties. When using this compound as substitute for a plating enhancer compound in a gold plating bath the plating rate was sufficiently high but the stability of the gold plating bath was poor. Within 3 h the gold plating baths was irrevocably degraded. The standard deviation of the gold layer thicknesses was 8.5%.
- comparative compounds A to F did not allow for sufficient plating rates of gold baths containing these compounds.
- the plating rates were always even below 200 nm/h and thus not sufficient for today's industrial demands.
- Comparative compounds G and H as additives gave sufficient plating rates but the stability of the respective gold plating baths were unsatisfactory.
- Example 5 Stability and life-time of gold plating baths
- the gold plating baths of examples 1 to 3 were used to deposit gold on substrates for a prolonged time.
- the stability of the gold plating baths and the plating rate were monitored over time. If a plate-out occurred the solution was filtered and re-used. Every day during the experiment, the pH value was measured and adjusted to 7.1 with KOH and/or H 3 PO 4 if necessary.
- the source of gold ions, the source of cyanide ions and the plating enhancer compound were continuously replenished.
- Table 6 provides information on the stability of gold plating baths containing different plating enhancer compounds.
- the plating baths were visually inspected directly after make-up (day 0) and for one week on a daily basis.
- the gold plating baths were also used to deposit gold on substrates every day during this test period. These results are summarized in Table 7. The values given in said table are the deposit thickness in nanometres obtained after 20 min of plating.
- Table 6 Visual inspection of gold plating baths over time while in usage.
- N 1 ,N 2 -diethylethane-1,2-diamine and N 1 ,N 2 -dipropylethane-1,2-diamine slight precipitates occurred, the plating baths were still able to deposit gold layers without any plating rate reduction.
- the branched plating enhancer compounds, N 1 ,N 2 -di-iso-propylethane-1,2-diamine showed no precipitates over 7 days and provided good plating rates over the entire tested period. It is thus deduced that plating enhancer compounds having branched alkyl residues result in improved bath stability.
- Example 6 Ratio of plating enhancer compound to reducing agent for gold ions
- a gold plating baths containing the following components was prepared by dissolving all components in water: Water 100 mL potassium hydroxide 12.4 g/L N 1 ,N 2 -di- iso -propylethane-1,2-diamine see table 8 complexing agent 89 mmol/L sulphur based stabilising agent 1.5 mg/L thallium ions 4.4 mg/L potassium cyanide 42 mg/L formaldehyde 0.3 g/L gold ion source 1.47 g/L
- the gold plating bath was adjusted with KOH/H 3 PO 4 to a pH value of 7.1.
- a substrate was subjected to the process as described in table 1 wherein the electroless gold plating step was carried out for 10 min only.
- the highest plating rates can be obtained if the molar ratio of plating enhancer compound and reducing agent for gold ions ranges between 1 or 2 to 1. The plating rate dropped upon further increasing the amount of plating enhancer compound.
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Claims (15)
- Bain aqueux de placage d'or autocatalytique, comprenant au moins une source d'ions d'or et au moins un agent réducteur pour les ions d'or, caractérisé en ce qu'il comprend au moins un dérivé d'éthylènediamine selon la formule (I)
- Bain aqueux de placage d'or autocatalytique selon la revendication 1 caractérisé en ce que les résidus R1 et R2 dans la formule (I) comprennent de 2 à 8 atomes de carbone.
- Bain aqueux de placage d'or autocatalytique selon l'une quelconque des revendications précédentes caractérisé en ce que les résidus R1 et R2 dans la formule (I) sont identiques.
- Bain aqueux de placage d'or autocatalytique selon l'une quelconque des revendications précédentes caractérisé en ce que les résidus R1 et R2 dans la formule (I) sont exempts de fragments amino et/ou fragments hydroxy supplémentaires.
- Bain aqueux de placage d'or autocatalytique selon l'une quelconque des revendications précédentes caractérisé en ce que les résidus R1 et R2 dans la formule (I) sont des résidus alkyle ramifiés ayant 3 à 6 atomes de carbone.
- Bain aqueux de placage d'or autocatalytique selon l'une quelconque des revendications précédentes caractérisé en ce que la concentration de l'au moins un composé d'adjuvant de placage selon la formule (I) est dans la plage de 0,001 à 1 mol/l.
- Bain aqueux de placage d'or autocatalytique selon la revendication 6 caractérisé en ce que la concentration de l'au moins un composé d'adjuvant de placage selon la formule (I) est dans la plage de 10 à 100 mmol/l.
- Bain aqueux de placage d'or autocatalytique selon l'une quelconque des revendications précédentes caractérisé en ce que l'au moins un agent réducteur pour les ions d'or est choisi dans le groupe constitué d'aldéhydes aliphatiques, de dialdéhydes aliphatiques, d'un aldéhyde insaturé aliphatique, d'aldéhydes aromatiques, de sucres comportant un groupe aldéhyde et de précurseurs de formaldéhyde.
- Bain aqueux de placage d'or autocatalytique selon l'une quelconque des revendications précédentes caractérisé en ce que le rapport molaire de l'agent réducteur au composé d'adjuvant de placage selon la formule (I) est dans la plage de 0,8 à 3.
- Bain aqueux de placage d'or autocatalytique selon l'une quelconque des revendications précédentes caractérisé en ce que le pH du bain aqueux de placage d'or autocatalytique est dans la plage de 5 à 9.
- Bain aqueux de placage d'or autocatalytique selon l'une quelconque des revendications précédentes caractérisé en ce que la concentration d'ions d'or est dans la plage de 0,1 à 10 g/l.
- Bain aqueux de placage d'or autocatalytique selon l'une quelconque des revendications précédentes caractérisé en ce que le bain aqueux de placage d'or autocatalytique comprend en outre au moins un agent complexant choisi dans le groupe constitué d'acides carboxyliques, acides hydroxycarboxyliques, acides aminocarboxyliques, acides aminophosphoniques et un sel des composés mentionnés ci-dessus.
- Procédé de dépôt d'une couche d'or sur un substrat, comprenant, dans cet ordre, les étapes de(i) fourniture d'un substrat(ii) mise en contact d'au moins une portion de la surface du substrat avec le bain aqueux de placage d'or autocatalytique selon les revendications 1 à 12et déposer ainsi une couche d'or sur au moins une partie de la surface du substrat.
- Procédé de dépôt d'une couche d'or sur un substrat selon la revendication 13 dans lequel le substrat comporte une surface constituée d'un métal ou un alliage métallique et de l'or est ensuite déposée sur la surface constituée d'un métal ou un alliage métallique, choisi dans le groupe constitué du nickel, d'alliages de nickel tels que des alliages phosphoreux de nickel, des alliages de bore-nickel, du cobalt, d'alliages de cobalt tels que des alliages phosphore-cobalt, des alliages phosphoreux de molybdène-cobalt, des alliages de bore-molybdène-cobalt, des alliages phosphoreux de bore-molybdène-cobalt, des alliages phosphoreux de tungstène-cobalt, des alliages de bore-tungstène-cobalt, des alliages phosphoreux de bore-tungstène-cobalt, du palladium, d'alliages de palladium tels que des alliages phosphoreux de palladium, des alliages de bore-palladium, du cuivre et d'alliages de cuivre et de l'or ou d'alliages d'or.
- Utilisation du dérivé d'éthylènediamine selon la formule (I)
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
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EP15186095.4A EP3144413B1 (fr) | 2015-09-21 | 2015-09-21 | Composition de bain de placage pour un dépôt autocatalytique d'or |
TW105129251A TWI709663B (zh) | 2015-09-21 | 2016-09-09 | 用於金之無電電鍍之鍍浴組合物、沉積金層之方法及乙二胺衍生物之用途 |
KR1020187006725A KR102722483B1 (ko) | 2015-09-21 | 2016-09-16 | 금의 무전해 도금을 위한 도금욕 조성물 및 금 층을 침착시키는 방법 |
CN202310280778.1A CN116607132A (zh) | 2015-09-21 | 2016-09-16 | 用于无电金镀敷的镀浴组合物和沉积金层的方法 |
JP2018515078A JP6930966B2 (ja) | 2015-09-21 | 2016-09-16 | 金を無電解めっきするためのめっき浴組成物、および金層を析出させる方法 |
PCT/EP2016/072053 WO2017050662A1 (fr) | 2015-09-21 | 2016-09-16 | Composition de bain de placage pour dépôt autocatalytique d'or et procédé de dépôt d'une couche d'or |
CN201680052427.3A CN108026642A (zh) | 2015-09-21 | 2016-09-16 | 用于无电金镀敷的镀浴组合物和沉积金层的方法 |
US15/758,754 US20200232099A1 (en) | 2015-09-21 | 2016-09-16 | Plating bath composition for electroless plating of gold and a method for depositing a gold layer |
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EP15186095.4A EP3144413B1 (fr) | 2015-09-21 | 2015-09-21 | Composition de bain de placage pour un dépôt autocatalytique d'or |
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EP3144413A1 EP3144413A1 (fr) | 2017-03-22 |
EP3144413B1 true EP3144413B1 (fr) | 2018-04-25 |
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EP15186095.4A Active EP3144413B1 (fr) | 2015-09-21 | 2015-09-21 | Composition de bain de placage pour un dépôt autocatalytique d'or |
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Country | Link |
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US (1) | US20200232099A1 (fr) |
EP (1) | EP3144413B1 (fr) |
JP (1) | JP6930966B2 (fr) |
CN (2) | CN116607132A (fr) |
TW (1) | TWI709663B (fr) |
WO (1) | WO2017050662A1 (fr) |
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Publication number | Priority date | Publication date | Assignee | Title |
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EP3517651B1 (fr) * | 2018-01-26 | 2020-09-02 | ATOTECH Deutschland GmbH | Bain de placage d'or anélectrolytique |
JP7228411B2 (ja) | 2019-03-06 | 2023-02-24 | 上村工業株式会社 | 無電解金めっき浴 |
JP6945050B1 (ja) * | 2020-12-01 | 2021-10-06 | 日本エレクトロプレイテイング・エンジニヤース株式会社 | 非シアン系の置換金めっき液及び置換金めっき方法 |
CN114003009B (zh) * | 2021-10-29 | 2024-01-12 | 中国联合网络通信集团有限公司 | 沉铜控制方法、沉铜控制模型的训练方法及装置 |
EP4407067A1 (fr) | 2023-01-24 | 2024-07-31 | Atotech Deutschland GmbH & Co. KG | Composition de bain de placage pour le placage de métal précieux et procédé de dépôt d'une couche de métal précieux |
Family Cites Families (8)
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US4978559A (en) * | 1989-11-03 | 1990-12-18 | General Electric Company | Autocatalytic electroless gold plating composition |
JP3831842B2 (ja) * | 2002-03-25 | 2006-10-11 | 奥野製薬工業株式会社 | 無電解金めっき液 |
EP2043865B1 (fr) * | 2006-07-13 | 2010-03-31 | Telecom Italia S.p.A. | Cartouche pour jets d'encre présentant une couche faite d'une composition de résines durcissables |
JP5526459B2 (ja) * | 2006-12-06 | 2014-06-18 | 上村工業株式会社 | 無電解金めっき浴及び無電解金めっき方法 |
JP5013077B2 (ja) * | 2007-04-16 | 2012-08-29 | 上村工業株式会社 | 無電解金めっき方法及び電子部品 |
CA2797089A1 (fr) * | 2010-05-13 | 2011-11-17 | Indiana University Research And Technology Corporation | Peptides de la superfamille du glucagon manifestant une activite de recepteur couple a une proteine g |
JP4831710B1 (ja) | 2010-07-20 | 2011-12-07 | 日本エレクトロプレイテイング・エンジニヤース株式会社 | 無電解金めっき液及び無電解金めっき方法 |
CN105745355B (zh) * | 2014-08-25 | 2018-03-30 | 小岛化学药品株式会社 | 还原型化学镀金液及使用该镀金液的化学镀金方法 |
-
2015
- 2015-09-21 EP EP15186095.4A patent/EP3144413B1/fr active Active
-
2016
- 2016-09-09 TW TW105129251A patent/TWI709663B/zh active
- 2016-09-16 US US15/758,754 patent/US20200232099A1/en not_active Abandoned
- 2016-09-16 CN CN202310280778.1A patent/CN116607132A/zh active Pending
- 2016-09-16 JP JP2018515078A patent/JP6930966B2/ja active Active
- 2016-09-16 WO PCT/EP2016/072053 patent/WO2017050662A1/fr active Application Filing
- 2016-09-16 CN CN201680052427.3A patent/CN108026642A/zh active Pending
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Also Published As
Publication number | Publication date |
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US20200232099A1 (en) | 2020-07-23 |
EP3144413A1 (fr) | 2017-03-22 |
CN108026642A (zh) | 2018-05-11 |
JP2018532046A (ja) | 2018-11-01 |
KR20180044923A (ko) | 2018-05-03 |
TW201720955A (zh) | 2017-06-16 |
WO2017050662A1 (fr) | 2017-03-30 |
TWI709663B (zh) | 2020-11-11 |
CN116607132A (zh) | 2023-08-18 |
JP6930966B2 (ja) | 2021-09-01 |
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