Classifications

• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
  • C09D1/00—Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
  • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
  • C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
  • C09D7/20—Diluents or solvents
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02107—Forming insulating materials on a substrate
  • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
  • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
  • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
  • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
  • H01L21/02192—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02107—Forming insulating materials on a substrate
  • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
  • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02107—Forming insulating materials on a substrate
  • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
  • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
  • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02518—Deposited layers
  • H01L21/02521—Materials
  • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02656—Special treatments
  • H01L21/02664—Aftertreatments
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
  • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
  • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
  • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
  • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
  • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
  • H01L29/76—Unipolar devices, e.g. field effect transistors
  • H01L29/772—Field effect transistors
  • H01L29/78—Field effect transistors with field effect produced by an insulated gate
  • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
  • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Definitions

• the present invention relates to a coating composition preparable from at least one yttrium-containing precursor, to a process for its preparation and to its use.
• indium oxide-containing semiconductor layers are of great interest.
• indium oxide-containing semiconductor layers produced by liquid-phase processes have the disadvantage of not having sufficiently good electrical properties
• yttria-containing layers as particularly suitable stabilizer layers for indium oxide semiconductor layers (Nomura et al., Applied Physics Letters 99, 053505-1 - 053505-3 (201 1); Nomura et al., Thin solid Films 520 (2012) 3378-3782; US 2012/0097957 A1).
• the yttria-containing layers described there are produced in a very complicated manner by methods such as CVD methods, e-beam evaporation and PLD (Pulsed Laser Deposition). It would therefore be desirable to this in itself
• US 2012/0104381 A1 discloses z.
• liquid-phase methods or sol-gel methods for producing yttria-containing layers are disclosed not described.
• Sol-gel Process for the preparation of yttria-containing layers are z. B. in the diploma thesis of Rudolph Rippstein (1993) described.
• aqueous processes for producing yttria-containing layers are prior art.
• the aqueous gel solutions of yttrium precursors described therein do not lead to stabilizer layers which
• the object of the present invention to provide coating compositions which are particularly suitable as stabilizer layers for indium oxide-containing layers. It was particularly desirable to be able to use these coating compositions to be able to produce transistors with stabilizer layers arranged above semiconductor layers, which have the lowest possible turn-on voltages and furthermore have particularly small shifts in the turn-on voltages in negative and positive bias stress tests (NBST or PBST).
• the present objects are achieved by the coating composition according to the invention, which can be prepared from at least one yttrium-containing precursor, a solvent A and a different solvent A solvent B, wherein the ratio of the vapor pressure of the solvent A at 20 ° C to the vapor pressure of the solvent B at 20 ° C
• a coating composition is a liquid formulation which is suitable for the production of coatings, in particular for the production of yttrium-containing coatings.
• the coating composition according to the invention is preferably a coating composition suitable for printing, slot-die or spin-coating processes. Most preferably, the coating composition according to the invention is a coating composition suitable for printing processes, ie a printing ink.
• yttrium-containing “precursor” is to be understood as meaning a soluble or dispersible yttrium-containing chemical compound which, after printing a corresponding composition, can be converted to an oxide yttrium-containing layer, in particular an yttrium oxide layer "Yttrium-containing" precursor is to be understood as meaning a precursor which has at least one yttrium atom.
• the coating composition according to the invention furthermore has at least two solvents A and B.
• the solvents A and B are selected such that the quotient of the vapor pressure at 20 ° C of the im Compared to solvent B more volatile solvent A and the vapor pressure at 20 ° C of less volatile compared to the solvent A solvent B is greater than or equal to 10.
• the determination of the vapor pressures takes place via the static determination method known to the person skilled in the art. In this method, the vapor pressure is measured, which is in the thermodynamic equilibrium in the closed system at a given
• the solvent A is not only more volatile than the solvent B, but furthermore has the highest vapor pressure in comparison to all solvents present in the coating composition.
• the solvent B is not only less volatile than the solvent A, but also has the lowest vapor pressure in comparison with all those in the
• the formulations according to the invention can be prepared not only from the at least one yttrium-containing precursor and the at least two solvents, but also contain the at least one precursor and the at least two solvents. The same applies equally to the precursors of all preferred embodiments described below.
• the at least one yttrium-containing precursor can have exclusively yttrium as (semi-) metal atoms.
• (half) metals are meant metals and semi-metals.
• the at least one precursor may be complementary to yttrium
• all precursors used to prepare the coating composition preferably exclusively contain yttrium.
• the at least one yttrium-containing precursor is selected from the group consisting of yttrium alkoxides, yttrium oxo alkoxides, yttrium alkoxy alcoholates and yttrium salts.
• Yttrium alkoxides are to be understood as meaning at least one yttrium atom and at least three yttrium compounds having alkoxy radicals.
• yttrium oxo alkoxides furthermore also have at least one multiply bridging oxygen atom, ie they consist of at least two yttrium atoms, at least one oxo radical and at least four alkoxide radicals. Due to the bridging effect of the oxo radicals, yttrium oxo However, alkoxides are often cluster-like compounds.
• Yttrium-alkoxy-alcoholates furthermore include yttrium compounds which have at least one yttrium atom and at least one oxyalkylalkyl radical (RO-R'-O radical).
• Yttrium alkoxy alcoholates can consist exclusively of one yttrium atom and three RO-R'-O radicals or can have in addition to these oxo radicals and / or alkoxide radicals.
• Preferred yttrium salts are also yttrium nitrates and yttrium halides.
• the at least one precursor is selected from the group of the yttrium oxo alkoxides, in particular from the group of the yttrium oxo alkoxides of the generic formula Y x Oy (OR) z with 3 ⁇ x ⁇ 12, 1 ⁇ y ⁇ x, x ⁇ z ⁇ (3x-1) and y + z> x.
• the best coating compositions contain as precursor the yttrium oxo alkoxide Y 5 O (0- / Pr) i 3 .
• the coating compositions according to the invention preferably contain all the yttrium-containing precursors used in a total proportion of from 0.1 to 10% by weight, based on the total weight of the formulation.
• the coating composition may additionally be prepared using yttrium-free (semi) metal precursors. Their proportion is preferably not more than 5 wt .-%. However, the coating composition is particularly preferred without
• the coating composition according to the invention has at least two solvents.
• the coating composition according to the invention is preferably non-aqueous, since it is thus possible to achieve particularly homogeneous and thin layers.
• a non-aqueous coating composition is meant a coating composition which does not comprise water as a solvent.
• Corresponding coating compositions are thus those which are not used in sol-gel processes. More preferably, the water content of the coating composition (eg, by absorbing water from the atmosphere) is at most 500 ppm.
• the solvents A and B are preferably selected from the group of the alcohols, the alkoxy alcohols, the hydroxy ethers and the carboxylic acid and lactic acid esters.
• the boiling point of the solvent A at SATP conditions is 50 to 140 ° C.
• solvents A are those selected from the group consisting of 1-methoxy-2-propanol, 2-methoxyethanol, butyl acetate, i-propanol, t-butanol and ethanol. Most preferably, the solvent A is ethanol.
• the boiling point of the solvent B is furthermore preferably 100 to 200 ° C. under SATP conditions. More preferably, the solvent B is selected from the group consisting of 1-hexanol, cyclohexanol, tetrahydrofurfuryl alcohol, 1-methoxy-2-propyl acetate and ethyl lactate.
• the solvent B 1 is hexanol or tetrahydrofurfuryl alcohol, very particularly preferably tetrahydrofurfuryl alcohol.
• the proportion of solvent A is from 75 to 99% by volume and the proportion of solvent B is from 1 to 25% by weight, based on the total volume of the solvents present.
• the coating composition may contain other solvents other than solvents A and B. It may also have only the solvents A and B and thus only two solvents.
• the coating composition can be prepared from at least one yttrium-containing precursor, a solvent A and a different solvent B from the solvent A, wherein the ratio of the vapor pressure of the solvent A to the vapor pressure of the solvent B ⁇ > 10
• the third solvent C is selected from the group consisting of 1-methoxy-2-propanol and cyclohexanol.
• a coating composition consisting of at least one yttrium-containing precursor, a solvent A, a solvent B and a
• Solvent C is produced.
• the inventive composition is produced.
• the inventive composition is produced.
• Coating composition thus exclusively three solvents.
• the solvent A is ethanol, solvent B 1 -hexanol or
• the coating composition of the invention may further comprise one or more additives to achieve desired properties.
• Coating Composition Additives are preferably present at less than 2% by weight, based on the total weight of the coating composition. More preferably, however, the coating composition of the invention is free of additives.
• the present invention furthermore relates to a process for the preparation of a coating composition according to any one of the preceding claims, wherein at least one yttrium-containing precursor, a solvent A, one of the solvent A
• An yttrium-containing "precursor” is to be understood as meaning a soluble or dispersible yttrium-containing chemical compound which can be converted to an yttrium oxide-containing layer after the printing of a corresponding composition to understand a precursor having at least one yttrium atom.
• the process according to the invention furthermore uses at least two solvents A and B.
• the solvents A and B are selected such that the quotient of the vapor pressure of the solvent A which is more volatile than the solvent B and the vapor pressure of the solvent B less volatile than the solvent A is greater than or equal to 10.
• the determination of the vapor pressures takes place via the static determination method known to the person skilled in the art.
• the vapor pressure is measured, which sets in a thermodynamic equilibrium in a closed system at a given temperature (here: 20 ° C) over a substance.
• the solvent A is not only more volatile than the solvent B, but furthermore has the highest vapor pressure in comparison to all solvents present in the coating composition.
• the solvent B is not only less volatile than the solvent A, but also has the lowest vapor pressure compared to all solvents used in the process.
• the at least one yttrium-containing precursor can have exclusively yttrium as (semi-) metal atoms.
• (half) metals are meant metals and semi-metals.
• the at least one precursor may be complementary to yttrium
• yttrium-containing precursor is selected from the group consisting of yttrium alkoxides, yttrium oxo alkoxides, yttrium alkoxy alcoholates and yttrium salts.
• Yttrium alkoxides are to be understood as meaning at least one yttrium atom and at least three yttrium compounds having alkoxy radicals.
• yttrium oxo alkoxides furthermore also have at least one multiply bridging oxygen atom, ie they consist of at least two yttrium atoms, at least one oxo radical and at least four alkoxide radicals. Owing to the bridging effect of the oxo radicals, however, yttrium oxo alkoxides are often cluster-like compounds.
• Yttrium-alkoxy-alcoholates furthermore include yttrium compounds which have at least one yttrium atom and at least an oxyalkylalkyl radical (RO-R'-O radical).
• Yttrium alkoxy alcoholates can consist exclusively of one yttrium atom and three RO-R'-O radicals or can have in addition to these oxo radicals and / or alkoxide radicals.
• Preferred yttrium salts are also yttrium nitrates and yttrium halides.
• the at least one precursor is selected from the group of the yttrium oxo alkoxides, in particular from the group of the yttrium oxo alkoxides of the generic formula Y x Oy (OR) z with 3 ⁇ x ⁇ 12, 1 ⁇ y ⁇ x, x ⁇ z ⁇ (3x-1) and y + z> x.
• the best coating compositions are achieved when the precursor is the yttrium oxo-alkoxide Y 5 O (O-iPr) 13 .
• the process according to the invention preferably uses all yttrium-containing precursors in a total proportion of from 0.1 to 10% by weight, based on the total weight of the formulation.
• Yttrium-free (semi) metal precursors can also be used in the process according to the invention. Their proportion is preferably not more than 5 wt .-%. However, the method is particularly preferred without the use of yttrium-free precursors
• Coating composition prepared exclusively with yttrium-containing precursors.
• the inventive method further uses at least two solvents.
• the process according to the invention is preferably non-aqueous, since non-aqueous coating compositions suitable for producing particularly homogeneous and thin layers can be obtained in this way.
• a non-aqueous coating composition is meant a coating composition which does not comprise water as a solvent.
• Corresponding coating compositions are therefore those which are not used in sol-gel processes. More preferably, the water content in the process carried out, and thus also in the coating composition (e.g., by absorbing water from the atmosphere), is at most 500 ppm.
• the solvents A and B are preferably selected from the group of the alcohols, the alkoxy alcohols, the hydroxy ethers and the carboxylic acid and lactic acid esters. Particularly good results result when the ratio of the vapor pressures of the two solvents is not only 10 or more, but continues to be the difference of the boiling points of the two solvents A and B in SATP conditions> 30 ° C. Under “SATP conditions” is a pressure of 10 5 Pa and a temperature of 25 ° C to understand.
• the boiling point of the solvent A at SATP conditions is 50 to 140 ° C.
• Further preferred solvents A are those selected from the group consisting of 1-methoxy-2-propanol, 2-methoxyethanol, butyl acetate, i-propanol, t-butanol and ethanol.
• the solvent A is ethanol.
• the boiling point of the solvent B is furthermore preferably 100 to 200 ° C. under SATP conditions.
• the solvent B is selected from the group consisting of 1-hexanol, cyclohexanol, tetrahydrofurfuryl alcohol, 1-methoxy-2-propyl acetate and ethyl lactate.
• the solvent B 1 is hexanol or tetrahydrofurfuryl alcohol, very particularly preferably tetrahydrofurfuryl alcohol.
• the proportion of solvent A is from 75 to 99% by volume and the proportion of solvent B is from 1 to 25% by weight, based on the total volume of the solvents present.
• the method can thus use only the solvents A and B and thus only two solvents.
• at least one yttrium-containing precursor, a solvent A and a solvent B different from solvent A are preferred, the ratio of the vapor pressure of the solvent A at 20 ° C. to the vapor pressure of the solvent B at 20 ° C. ⁇ > 10
• the third solvent C is at least one third solvent C, which is different from the solvent A and the solvent B, mixed together.
• the third solvent C is selected from the group consisting of 1-methoxy-2-propanol and cyclohexanol.
• the solvent A is ethanol, solvent B 1 -hexanol or
• Properties of the resulting coating composition may be added one or more additives. If the method provides for the use of additives, they are preferably less than 2% by weight, based on the total mass of the used
• the invention further relates to the use of the invention
• Coating compositions for producing yttria-containing layers are particularly preferred.
• the invention thus also stabilizer layers, from the
• Coating compositions according to the invention can be produced.
• the stabilizer layers according to the invention achieve particularly good properties when they are 1 to 20 nm thick.
• the following examples illustrate the subject matter of the present invention without being self-limiting.
• yttrium oxo-alkoxide [Y 5 O (O-iPr) 13 ] are dissolved in 1 ml of tetrahydrofurfuryl alcohol by stirring.
• the solution is diluted in the volume ratio 1: 3 with ethanol.
• the solution is applied by spin coating on an indium oxide-containing layer. The on the
• Indium oxide-containing layer located yttrium-containing coating is thermally
• yttrium oxo-alkoxide [Y 5 O (O-iPr) 13 ] in 1 ml of 1-methoxy-2-propanol are dissolved by stirring.
• the solution is diluted with 2 parts of 1-methoxy-2-propanol, and 1 part of ethanol and 0.2 parts of tetrahydrofurfuryl alcohol.
• the solution is applied by spin coating on an indium oxide-containing layer.
• the yttrium-containing coating on the indium oxide-containing layer is thermally converted.
• yttrium oxo-alkoxide [Y 5 O (O-iPr) 13 ] are dissolved in 1 ml of tetrahydrofurfuryl alcohol by stirring.
• the solution is diluted with 1.33 parts of cyclohexanol and 1.67 parts of tert-butanol.
• the solution is applied by spin coating on an indium oxide-containing layer.
• the yttrium-containing coating on the indium oxide-containing layer is thermally converted.
• yttrium oxo-alkoxide [Y 5 O (O-iPr) 13 ] are dissolved in 1 ml of tetrahydrofurfuryl alcohol by stirring. The solution is diluted in the volume ratio 1: 3 with tetrahydrofurfuryl alcohol. The solution is applied by spin coating on an indium oxide-containing layer. The yttrium-containing coating on the indium oxide-containing layer is thermally converted. Comparative Example 2:
• yttrium oxo-alkoxide [Y 5 O (O-iPr) 13 ] in 1 ml of 1-methoxy-2-propanol are dissolved by stirring.
• the solution is diluted in the volume ratio 1: 3 with 1-methoxy-2-propanol.
• the solution is applied by spin coating on an indium oxide-containing layer.
• the yttrium-containing coating on the indium oxide-containing layer is thermally converted.
• Indium oxide-containing layer located yttrium-containing coating is thermally
• the coating is produced by spin coating of 100 ⁇ at 2,000 rpm for 60 seconds.
• Coated silicon wafers (1, 5 x 1, 5 cm 2 ) with a 230 nm thick Si0 2 layer and prestructured source and drain contacts made of ITO. These wafers were previously spin-coated with 100 ⁇ of an indium alkoxide-containing coating composition at 2000 rpm for 30 seconds, and this layer was thermally converted to an indium oxide-containing layer. The thermal conversion of both layers takes place on a hotplate.
• the electrical characterization is performed with a Keithley 2612 system source meter and Keithley 3706-NFP system switch / multimeter. The samples are measured under N 2 atmosphere at RT. The characterization will take place after the
• Drain contacts connected to the device tungsten probes.
• Source electrode is passed through a voltage profile (-20 to +30 V) and recorded the current flowing between the source and drain electrode current. With the help of this data, the mobility values can be calculated.
• the formulas used are:
• l D and V G are the current between drain and source and the voltage applied to the gate, respectively.
• L and W correspond to the length and the width of the channel and C, is the
• Dielectric constant of the dielectric The higher the value for mobility, the better the material.
• V 0n turn-on voltage
• Tetrahydrofurfuryl alcohol 100% 3,3 -16,5 1,5 -18,5 0 1-Methoxy-2-propanol 100% 2,6 -2,5 -15 -13,5 10,5 l-Methoxy-2-propanol , 25%

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