EP2939260A4 - Procédé de préparation d'échantillons pour imagerie - Google Patents

Procédé de préparation d'échantillons pour imagerie

Info

Publication number
EP2939260A4
EP2939260A4 EP13867351.2A EP13867351A EP2939260A4 EP 2939260 A4 EP2939260 A4 EP 2939260A4 EP 13867351 A EP13867351 A EP 13867351A EP 2939260 A4 EP2939260 A4 EP 2939260A4
Authority
EP
European Patent Office
Prior art keywords
imaging
preparing samples
samples
preparing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP13867351.2A
Other languages
German (de)
English (en)
Other versions
EP2939260A2 (fr
Inventor
Michael Schmidt
Jeffrey Blackwood
Stacey Stone
Sang Hoon Lee
Ronald Kelley
Trevan Landin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FEI Co
Original Assignee
FEI Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US14/081,947 external-priority patent/US8912490B2/en
Application filed by FEI Co filed Critical FEI Co
Priority to EP13867351.2A priority Critical patent/EP2939260A4/fr
Publication of EP2939260A2 publication Critical patent/EP2939260A2/fr
Publication of EP2939260A4 publication Critical patent/EP2939260A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/32—Polishing; Etching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Biochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
EP13867351.2A 2012-12-31 2013-12-30 Procédé de préparation d'échantillons pour imagerie Withdrawn EP2939260A4 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP13867351.2A EP2939260A4 (fr) 2012-12-31 2013-12-30 Procédé de préparation d'échantillons pour imagerie

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261747512P 2012-12-31 2012-12-31
US14/081,947 US8912490B2 (en) 2011-06-03 2013-11-15 Method for preparing samples for imaging
EP13197357.0A EP2749863A3 (fr) 2012-12-31 2013-12-16 Procédé de préparation d'échantillons pour imagerie
EP13867351.2A EP2939260A4 (fr) 2012-12-31 2013-12-30 Procédé de préparation d'échantillons pour imagerie
PCT/US2013/078345 WO2014106200A2 (fr) 2012-12-31 2013-12-30 Procédé de préparation d'échantillons pour imagerie

Publications (2)

Publication Number Publication Date
EP2939260A2 EP2939260A2 (fr) 2015-11-04
EP2939260A4 true EP2939260A4 (fr) 2016-01-20

Family

ID=49998017

Family Applications (2)

Application Number Title Priority Date Filing Date
EP13197357.0A Withdrawn EP2749863A3 (fr) 2011-06-03 2013-12-16 Procédé de préparation d'échantillons pour imagerie
EP13867351.2A Withdrawn EP2939260A4 (fr) 2012-12-31 2013-12-30 Procédé de préparation d'échantillons pour imagerie

Family Applications Before (1)

Application Number Title Priority Date Filing Date
EP13197357.0A Withdrawn EP2749863A3 (fr) 2011-06-03 2013-12-16 Procédé de préparation d'échantillons pour imagerie

Country Status (6)

Country Link
US (1) US20150330877A1 (fr)
EP (2) EP2749863A3 (fr)
JP (2) JP5925182B2 (fr)
CN (2) CN105103270A (fr)
TW (1) TW201432242A (fr)
WO (1) WO2014106200A2 (fr)

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CN105200394A (zh) * 2014-06-24 2015-12-30 Fei公司 创建对称fib沉积的方法和系统
KR102358551B1 (ko) * 2014-08-29 2022-02-04 가부시키가이샤 히다치 하이테크 사이언스 자동 시료편 제작 장치
CN104237567B (zh) * 2014-09-10 2016-05-11 武汉新芯集成电路制造有限公司 一种超薄平面透射电镜样品的制备方法
JP6584786B2 (ja) * 2015-02-13 2019-10-02 株式会社日立ハイテクノロジーズ プラズマイオン源および荷電粒子ビーム装置
CN105223383B (zh) * 2015-08-11 2018-08-28 上海华力微电子有限公司 一种平面tem样品的制备方法
CN105136539B (zh) * 2015-08-26 2019-05-03 上海华力微电子有限公司 一种制备tem芯片样品的方法
CN105300754B (zh) * 2015-09-11 2019-06-28 上海华力微电子有限公司 一种防止tem芯片样品破裂的方法
US9978586B2 (en) * 2015-11-06 2018-05-22 Fei Company Method of material deposition
US10103008B2 (en) 2016-01-12 2018-10-16 Fei Company Charged particle beam-induced etching
EP3249676B1 (fr) 2016-05-27 2018-10-03 FEI Company Microscope à deux faisceaux de particules chargées avec une fonctionnalité de dépôt in situ
US10324049B2 (en) * 2017-02-15 2019-06-18 Saudi Arabian Oil Company Rock sample preparation method by using focused ion beam for minimizing curtain effect
JP7214262B2 (ja) * 2017-03-27 2023-01-30 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置、試料加工方法
JP2020518117A (ja) * 2017-04-20 2020-06-18 エレメンタル・サイエンティフィック・レーザーズ・リミテッド・ライアビリティ・カンパニーＥｌｅｍｅｎｔａｌ Ｓｃｉｅｎｔｉｆｉｃ Ｌａｓｅｒｓ， Ｌｌｃ 超高速信号ウォッシュアウトのための調整可能なサンプルフロア
US10546719B2 (en) * 2017-06-02 2020-01-28 Fei Company Face-on, gas-assisted etching for plan-view lamellae preparation
DE102017212020B3 (de) * 2017-07-13 2018-05-30 Carl Zeiss Microscopy Gmbh Verfahren zur In-situ-Präparation und zum Transfer mikroskopischer Proben, Computerprogrammprodukt sowie mikroskopische Probe
CN108956669A (zh) * 2018-06-08 2018-12-07 浙江大学 一种金属燃料颗粒表面氧化层检测方法
CN110940689B (zh) * 2018-09-20 2022-06-21 无锡华润上华科技有限公司 SiC器件样品的制备方法及SiC器件的形貌分析方法
JP7114736B2 (ja) * 2018-11-12 2022-08-08 株式会社日立ハイテク 画像形成方法及び画像形成システム
WO2020104031A1 (fr) * 2018-11-22 2020-05-28 Applied Materials, Inc. Procédé de mesure de dimensions critiques sur un substrat, et appareil destiné à inspecter et à découper un dispositif électronique sur le substrat
DE102019214939A1 (de) * 2019-09-27 2021-04-01 Carl Zeiss Microscopy Gmbh Verfahren zum Analysieren, Abbilden und/oder Bearbeiten eines Gebiets eines Objektsund Teilchenstrahlvorrichtung zum Ausführen des Verfahrens
US10903044B1 (en) * 2020-02-12 2021-01-26 Applied Materials Israel Ltd. Filling empty structures with deposition under high-energy SEM for uniform DE layering
CN111195777A (zh) * 2020-03-02 2020-05-26 河北工程大学 一种陶瓷颗粒增强金属基复合材料超快激光精密刻蚀加工方法
WO2022016502A1 (fr) * 2020-07-24 2022-01-27 Yangtze Memory Technologies Co., Ltd. Procédé de préparation et d'analyse de films minces
GB202013591D0 (en) * 2020-08-28 2020-10-14 Oxford Instr Nanotechnology Ltd Sample preparation and method aparatus
TWI753739B (zh) 2021-01-08 2022-01-21 閎康科技股份有限公司 物性分析方法、物性分析試片及其製備方法
US11501951B1 (en) 2021-05-14 2022-11-15 Applied Materials Israel Ltd. X-ray imaging in cross-section using un-cut lamella with background material
CN117007625A (zh) * 2023-09-28 2023-11-07 北京中科科仪股份有限公司 一种pn结的扫描电镜测试方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2530700A2 (fr) * 2011-06-03 2012-12-05 FEI Company procédé de fabrication d'un échantillon mince pour imagerie à TEM

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JP2595083B2 (ja) * 1988-06-08 1997-03-26 株式会社日立製作所 配線形成方法及びその装置
JPH0794512A (ja) * 1993-09-20 1995-04-07 Hitachi Ltd 配線形成方法及び装置
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JP2004164966A (ja) * 2002-11-12 2004-06-10 Seiko Instruments Inc 関連情報をコード化して書き込む機能を備えたｔｅｍ試料加工用集束イオンビーム装置
JP2004226079A (ja) * 2003-01-20 2004-08-12 Seiko Instruments Inc 表面あるいは断面加工観察方法及びその装置
US6958248B1 (en) * 2003-02-28 2005-10-25 Credence Systems Corporation Method and apparatus for the improvement of material/voltage contrast
JP4318962B2 (ja) * 2003-06-02 2009-08-26 エスアイアイ・ナノテクノロジー株式会社 薄膜加工における膜厚制御方法とそれを実行するシステム
US7611610B2 (en) * 2003-11-18 2009-11-03 Fei Company Method and apparatus for controlling topographical variation on a milled cross-section of a structure
US7442924B2 (en) 2005-02-23 2008-10-28 Fei, Company Repetitive circumferential milling for sample preparation
US7423263B2 (en) * 2006-06-23 2008-09-09 Fei Company Planar view sample preparation
US8455821B2 (en) * 2006-10-20 2013-06-04 Fei Company Method for S/TEM sample analysis
US8835880B2 (en) * 2006-10-31 2014-09-16 Fei Company Charged particle-beam processing using a cluster source
JP5017059B2 (ja) * 2007-10-29 2012-09-05 エスアイアイ・ナノテクノロジー株式会社 試料作成装置および試料姿勢転換方法
JP2010230518A (ja) * 2009-03-27 2010-10-14 Toppan Printing Co Ltd 薄片試料作製方法
EP2402475A1 (fr) * 2010-06-30 2012-01-04 Fei Company Dépôt induit par faisceau à des températures cryogéniques
CN102401758A (zh) * 2010-09-17 2012-04-04 中芯国际集成电路制造(上海)有限公司 Tem样品制造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2530700A2 (fr) * 2011-06-03 2012-12-05 FEI Company procédé de fabrication d'un échantillon mince pour imagerie à TEM

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
XIANGXIN LIU ET AL: "Characterizing thin film PV devices with Low-Incidence Surface Milling by Focused Ion Beam", PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2011 37TH IEEE, IEEE, 19 June 2011 (2011-06-19), pages 1695 - 1699, XP032168025, ISBN: 978-1-4244-9966-3, DOI: 10.1109/PVSC.2011.6186281 *

Also Published As

Publication number Publication date
CN103913363A (zh) 2014-07-09
EP2939260A2 (fr) 2015-11-04
JP2014130145A (ja) 2014-07-10
US20150330877A1 (en) 2015-11-19
EP2749863A2 (fr) 2014-07-02
WO2014106200A2 (fr) 2014-07-03
WO2014106200A3 (fr) 2014-08-21
JP2016509669A (ja) 2016-03-31
CN105103270A (zh) 2015-11-25
TW201432242A (zh) 2014-08-16
JP5925182B2 (ja) 2016-05-25
EP2749863A3 (fr) 2016-05-04

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